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1. 发明授权

US06596343B1 Method and apparatus for processing semiconductor substrates with hydroxyl radicals 有权
标题翻译：用于处理具有羟基自由基的半导体衬底的方法和设备
公开(公告)号：US06596343B1
公开(公告)日：2003-07-22
申请号：US09557079
申请日：2000-04-21
申请人： Himanshu Pokharna , Shankar Chandran , Srinivas D. Nemani , Chen-an Chen , Francimar Campana , Ellie Yieh , Li-Qun Xia
发明人： Himanshu Pokharna , Shankar Chandran , Srinivas D. Nemani , Chen-an Chen , Francimar Campana , Ellie Yieh , Li-Qun Xia
IPC分类号： C23C1600
CPC分类号： C30B29/06 , C23C16/40 , C23C16/452 , C30B25/02
摘要： A method for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus outside of a chemical vapor deposition reactor, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions-precursor mixture is introduced into the chemical vapor deposition reactor.
摘要翻译：一种用于通过使羟基自由基与前体反应以使前体分解并形成沉积在基底上的膜来处理半导体衬底的方法。在化学气相沉积反应器外部的羟基离子产生装置中生产的羟基与前体混合以形成羟基离子前体混合物。将羟基离子前体混合物引入化学气相沉积反应器。

2. 发明授权

US07001850B2 Method of depositing dielectric films 失效
标题翻译：沉积介质膜的方法
公开(公告)号：US07001850B2
公开(公告)日：2006-02-21
申请号：US10894872
申请日：2004-07-20
申请人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
发明人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/325 , H01L21/0332 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/3148 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76826 , H01L21/76829 , Y10S438/931
摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
摘要翻译：提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

3. 发明授权

US06764958B1 Method of depositing dielectric films 失效
标题翻译：沉积介质膜的方法
公开(公告)号：US06764958B1
公开(公告)日：2004-07-20
申请号：US09627667
申请日：2000-07-28
申请人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
发明人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
IPC分类号： H01L2131
CPC分类号： H01L21/76834 , C23C16/325 , H01L21/0332 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/3148 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76826 , H01L21/76829 , Y10S438/931
摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
摘要翻译：提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

4. 发明授权

US07117064B2 Method of depositing dielectric films 失效
公开(公告)号：US07117064B2
公开(公告)日：2006-10-03
申请号：US11358793
申请日：2006-02-21
申请人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
发明人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
IPC分类号： G06F19/00 , C23C16/00 , H05H1/24 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/325 , H01L21/0332 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/3148 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76826 , H01L21/76829 , Y10S438/931
摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

5. 发明授权

US06218268B1 Two-step borophosphosilicate glass deposition process and related devices and apparatus 失效
标题翻译：两步硼磷硅玻璃沉积工艺及相关设备及装置
公开(公告)号：US06218268B1
公开(公告)日：2001-04-17
申请号：US09076170
申请日：1998-05-05
申请人： Li-Qun Xia , Ellie Yieh , Maria Galiano , Francimar Campana , Shankar Chandran
发明人： Li-Qun Xia , Ellie Yieh , Maria Galiano , Francimar Campana , Shankar Chandran
IPC分类号： H01L2176
CPC分类号： H01L21/02129 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/022 , H01L21/02271 , H01L21/31625
摘要： A method for forming a BPSG film from a two-step deposition process and related apparatus and devices. A conformal layer of BPSG is deposited on a substrate. A more stable layer of BPSG is deposited at a higher deposition rate over the conformal layer. The method is suitable for filling trenches at least as narrow as 0.06 microns with aspect ratios of at least 5.5:1.
摘要翻译：一种从两步沉积工艺形成BPSG膜的方法及相关设备和装置。 BPSG的保形层沉积在基底上。在保形层上以更高的沉积速率沉积更稳定的BPSG层。该方法适用于填充至少为0.06微米至少为5.5：1的纵横比的沟槽。

6. 发明授权

US06890850B2 Method of depositing dielectric materials in damascene applications 失效
标题翻译：在大马士革应用中沉积电介质材料的方法
公开(公告)号：US06890850B2
公开(公告)日：2005-05-10
申请号：US10196498
申请日：2002-07-15
申请人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
发明人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
IPC分类号： C23C16/42 , C23C16/30 , C23C16/40 , C23C16/56 , H01L21/311 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/31633 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
摘要翻译：提供了用于沉积氧掺杂介电层的方法。氧掺杂介电层可用于阻挡层或硬掩模。在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

7. 发明授权

US06815373B2 Use of cyclic siloxanes for hardness improvement of low k dielectric films 有权
标题翻译：使用环状硅氧烷来改善低k电介质膜的硬度
公开(公告)号：US06815373B2
公开(公告)日：2004-11-09
申请号：US10124655
申请日：2002-04-16
申请人： Vinita Singh , Srinivas D. Nemani , Yi Zheng , Lihua Li , Tzu-Fang Huang , Li-Qun Xia , Ellie Yieh
发明人： Vinita Singh , Srinivas D. Nemani , Yi Zheng , Lihua Li , Tzu-Fang Huang , Li-Qun Xia , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/401 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31612 , H01L21/31633
摘要： A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.
摘要翻译：通过混合一种或多种环状有机硅化合物，一种或多种脂族有机硅化合物和一种或多种低分子量脂族烃化合物，提供介电常数为约3.5或更低的低介电常数膜的沉积方法。一方面，包含一种或多种环状有机硅化合物，一种或多种脂族有机硅化合物，一种或多种脂族烃化合物，一种或多种氧化性气体和载气的气体混合物在足以沉积低介电常数的条件下反应薄膜在基材表面上。

8. 发明授权

US06531398B1 Method of depositing organosillicate layers 失效
标题翻译：沉积有机硅酸盐层的方法
公开(公告)号：US06531398B1
公开(公告)日：2003-03-11
申请号：US09702600
申请日：2000-10-30
申请人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh , Paul Fisher , Srinivas D. Nemani
发明人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh , Paul Fisher , Srinivas D. Nemani
IPC分类号： H01L2100
CPC分类号： H01L21/76828 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/31612 , H01L21/76801 , H01L21/7681 , H01L21/76835
摘要： A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxygen-containing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.
摘要翻译：公开了形成有机硅酸盐层的方法。有机硅酸盐层通过向包含有机硅烷化合物和含氧气体的气体混合物施加电场而形成。有机硅酸盐层与集成电路制造工艺兼容。在一个集成电路制造工艺中，有机硅酸盐层用作金属间介电层。在另一集成电路制造工艺中，有机硅酸盐层被结合到镶嵌结构中。

9. 发明授权

US07151053B2 Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications 有权
标题翻译：在大马士革应用中沉积包括掺杂氧化硅的电介质材料的方法
公开(公告)号：US07151053B2
公开(公告)日：2006-12-19
申请号：US11118678
申请日：2005-04-28
申请人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
发明人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
IPC分类号： H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/31633 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
摘要翻译：提供了用于沉积氧掺杂介电层的方法。氧掺杂介电层可用于阻挡层或硬掩模。在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

10. 发明授权

US06599574B1 Method and apparatus for forming a dielectric film using helium as a carrier gas 失效
标题翻译：使用氦气作为载气形成电介质膜的方法和装置
公开(公告)号：US06599574B1
公开(公告)日：2003-07-29
申请号：US08627631
申请日：1996-04-04
申请人： Ellie Yieh , Paul Gee , Li-Qun Xia , Francimar Campana , Shankar Venkataranan , Dana Tribula , Bang Nguyen
发明人： Ellie Yieh , Paul Gee , Li-Qun Xia , Francimar Campana , Shankar Venkataranan , Dana Tribula , Bang Nguyen
IPC分类号： C23C1600
CPC分类号： H01L21/02129 , C23C16/401 , H01L21/02271 , H01L21/02274 , H01L21/31625 , Y10S438/905 , Y10S438/906
摘要： The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior gap fill/reflow capability, and smoother surface morphology. The method forms a dielectric layer with a process using helium carrier gas that produces substantially less downstream residue than conventional methods and apparatus, thereby reducing the need for chamber cleaning and increasing throughput of processed wafers. The present invention utilizes helium instead of nitrogen as carrier gas in a process for forming a dielectric layer such as BPSG to provide various unexpected benefits. According to one aspect, the present invention forms a dielectric film on a substrate, and prolongs a period between chamber cleanings in a system by using helium which produces substantially less downstream and upstream residue than a process using nitrogen. The method includes introducing a process gas containing silicon, oxygen, and first dopant atoms into the chamber; using helium as the carrier gas in the system; and processing more substrates between cleanings than a process using nitrogen as carrier gas. A further aspect of the invention includes annealing the dielectric films formed on the substrates at a lower temperature than required by the process using nitrogen as carrier gas.
摘要翻译：本发明涉及电介质层的沉积，更具体地涉及一种用于形成介电层的方法和装置，例如具有改进的膜均匀性，较高沉积速率，优异的间隙填充/回流能力和更平滑的表面形态的硼磷硅酸盐玻璃（BPSG）。该方法形成具有使用氦载气的方法的电介质层，其产生比常规方法和设备基本上更少的下游残留物，从而减少对室清洁的需要并增加处理的晶片的生产量。本发明在形成诸如BPSG的介电层的工艺中使用氦代替氮作为载气，以提供各种意想不到的好处。根据一个方面，本发明在衬底上形成介电膜，并且通过使用产生比使用氮的方法显着更少的下游和上游残留物的氦来延长系统中的室清洁之间的时间。该方法包括将含有硅，氧和第一掺杂剂原子的工艺气体引入室中; 使用氦气作为系统中的载气; 并且在清洗之前处理比使用氮气作为载气的工艺更多的衬底。本发明的另一方面包括在比使用氮作为载气的方法所要求的温度更低的温度下退火形成在基板上的电介质膜。

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