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1. 发明申请

US20110088763A1 METHOD AND APPARATUS FOR IMPROVING PHOTOVOLTAIC EFFICIENCY 审中-公开
标题翻译：改善光伏效率的方法和装置
公开(公告)号：US20110088763A1
公开(公告)日：2011-04-21
申请号：US12904902
申请日：2010-10-14
申请人： Hien-Minh Huu Le , Mohd Fadzli Anwar Hassan , David Tanner , Dapeng Wang
发明人： Hien-Minh Huu Le , Mohd Fadzli Anwar Hassan , David Tanner , Dapeng Wang
IPC分类号： H01L31/0232 , H01L31/032 , C23C14/34
CPC分类号： H01L31/022466 , C23C14/0084 , C23C14/027 , C23C14/086 , H01L31/022483 , H01L31/0236 , H01L31/0368 , H01L31/03682 , H01L31/03685 , H01L31/03762 , H01L31/056 , H01L31/076 , H01L31/077 , H01L31/1804 , H01L31/182 , H01L31/1824 , H01L31/1884 , Y02E10/52 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method and apparatus for improving efficiency of photovoltaic cells by improving light capture between the photoelectric unit and back reflector is provided. A transition layer is formed at the interface between the photoelectric unit and transmitting conducting layer of the back reflector by adding oxygen, nitrogen, or both to the surface of the photoelectric unit or the interface between the photoelectric unit and the transmitting conducting layer. The transition layer may comprise silicon, oxygen, or nitrogen, and may be silicon oxide, silicon nitride, metal oxide with excess oxygen, metal oxide with nitrogen, or any combination thereof, including bilayers and multi-layers. The sputtering process for forming the transmitting conducting layer may feature at least one of nitrogen and excess oxygen, and may be performed by sputtering at low power, followed by an operation to form the rest of the transmitting conductive layer.
摘要翻译：提供了一种通过改善光电单元和后反射器之间的光捕获来提高光伏电池效率的方法和装置。通过向光电单元的表面或光电单元和透射导电层之间的界面添加氧，氮或两者，在光反射器的光电单元和透射导电层之间的界面处形成过渡层。过渡层可以包括硅，氧或氮，并且可以是氧化硅，氮化硅，具有过量氧的金属氧化物，具有氮的金属氧化物，或其任何组合，包括双层和多层。用于形成发射导电层的溅射工艺可以具有氮和过量氧中的至少一种，并且可以通过以低功率溅射进行，然后进行操作以形成透射导电层的其余部分。

2. 发明申请

US20110126875A1 CONDUCTIVE CONTACT LAYER FORMED ON A TRANSPARENT CONDUCTIVE LAYER BY A REACTIVE SPUTTER DEPOSITION 审中-公开
标题翻译：通过反应溅射沉积形成透明导电层的导电接触层
公开(公告)号：US20110126875A1
公开(公告)日：2011-06-02
申请号：US12628569
申请日：2009-12-01
申请人： Hien-Minh Huu Le , Valery V. Komin , David Tanner , Mohd Fadzli Anwar Hassan , Tzay-Fa Su , Dapeng Wang
发明人： Hien-Minh Huu Le , Valery V. Komin , David Tanner , Mohd Fadzli Anwar Hassan , Tzay-Fa Su , Dapeng Wang
IPC分类号： H01L31/042 , C23C14/34 , H01L31/06
CPC分类号： C23C14/0036 , C23C14/08 , C23C14/3464 , H01L31/022466 , H01L31/02366 , H01L31/076 , H01L31/1884 , Y02E10/548
摘要： Methods for sputter depositing a transparent conductive layer and a conductive contact layer are provided in the present invention. In one embodiment, the method includes forming a transparent conductive layer on a substrate by materials sputtered from a first target disposed in a reactive sputter chamber, and forming a conductive contact layer on the transparent conductive layer by materials sputtered from a second target disposed in the reactive sputter chamber.
摘要翻译：在本发明中提供溅射沉积透明导电层和导电接触层的方法。在一个实施例中，该方法包括通过从设置在反应性溅射室中的第一靶溅射的材料在衬底上形成透明导电层，以及在透明导电层上形成导电接触层，该导电接触层由设置在反应溅射室。

3. 发明申请

US20110162704A1 RELIABILITY OF BACK END OF LINE PROCESS BY ADDING PVD OXIDE FILM 审中-公开
标题翻译：通过添加PVD氧化膜对线工艺后端的可靠性
公开(公告)号：US20110162704A1
公开(公告)日：2011-07-07
申请号：US12965251
申请日：2010-12-10
申请人： Hien-Minh Huu Le , Mohd Fadzli Anwar Hassan , David Tanner
发明人： Hien-Minh Huu Le , Mohd Fadzli Anwar Hassan , David Tanner
IPC分类号： H01L31/0216 , C23C14/34 , H01L31/18
CPC分类号： H01L31/075 , C23C14/083 , C23C14/18 , C23C14/568 , H01L31/028 , H01L31/0304 , H01L31/0322 , H01L31/0368 , H01L31/0376 , H01L31/056 , H01L31/076 , H01L31/1868 , Y02E10/52 , Y02E10/541 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521 , Y10T29/5313
摘要： A method and apparatus for forming a protective coating on a photovoltaic device is provided. The photovoltaic device is formed by depositing photoelectric conversion units on a substrate, and by forming conductive layers and contacts on the photoelectric conversion units. The protective coating is formed by a deposition process, such as physical or chemical vapor deposition.
摘要翻译：提供了一种用于在光伏器件上形成保护涂层的方法和设备。光电器件通过在基板上沉积光电转换单元，并且通过在光电转换单元上形成导电层和接触而形成。保护涂层通过诸如物理或化学气相沉积的沉积工艺形成。

4. 发明授权

US09011969B2 Low-E panel with improved dielectric layer and method for forming the same 有权
标题翻译：具有改善介电层的Low-E面板及其形成方法
公开(公告)号：US09011969B2
公开(公告)日：2015-04-21
申请号：US13337962
申请日：2011-12-27
申请人： Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
发明人： Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
IPC分类号： B05D5/06 , C03C17/34 , C03C17/36
CPC分类号： C03C17/34 , C03C17/36 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C17/3681
摘要： Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxynitride layer is formed over the transparent substrate. The metal oxynitride layer includes a first metal and a second metal. A reflective layer is formed over the transparent substrate.
摘要翻译：本文提供的实施例描述了低e面板和形成低e面板的方法。提供透明基板。在透明基板上形成金属氧氮化物层。金属氧氮化物层包括第一金属和第二金属。在透明基板上形成反射层。

5. 发明申请

US20130164560A1 Low-E Panel With Improved Dielectric Layer And Method For Forming The Same 有权
标题翻译：具有改进的介电层的Low-E面板及其形成方法
公开(公告)号：US20130164560A1
公开(公告)日：2013-06-27
申请号：US13337962
申请日：2011-12-27
申请人： Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
发明人： Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
IPC分类号： B32B9/00 , B05D5/06
CPC分类号： C03C17/34 , C03C17/36 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C17/3681
摘要： Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxynitride layer is formed over the transparent substrate. The metal oxynitride layer includes a first metal and a second metal. A reflective layer is formed over the transparent substrate.
摘要翻译：本文提供的实施例描述了低e面板和形成低e面板的方法。提供透明基板。在透明基板上形成金属氧氮化物层。金属氧氮化物层包括第一金属和第二金属。在透明基板上形成反射层。

6. 发明申请

US20130319847A1 METHODS AND APPARATUSES FOR LOW RESISTIVITY Ag THIN FILM USING COLLIMATED SPUTTERING 审中-公开
标题翻译：低电阻Ag薄膜的使用方法和装置
公开(公告)号：US20130319847A1
公开(公告)日：2013-12-05
申请号：US13489079
申请日：2012-06-05
申请人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
发明人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
IPC分类号： C23C14/34 , C23C14/14 , C23C14/08
CPC分类号： C03C17/36 , C03C17/3644 , C03C17/366 , C03C17/3681 , C23C14/086 , C23C14/185 , C23C14/562
摘要： A method for making low emissivity panels, comprising forming highly smooth layers of silver on highly smooth layers of base or seed films. The highly smooth layers can be achieved by collimated sputtering, lowering the angular distribution of the sputtered particles when reaching the substrate.
摘要翻译：一种用于制造低辐射面板的方法，包括在基底或种子膜的高度光滑的层上形成高度光滑的银层。高度平滑的层可以通过准直的溅射来实现，当到达衬底时降低溅射颗粒的角分布。

7. 发明申请

US20130136851A1 METHOD OF FORMING ATO WITH HIGH THROUGHPUT AND ELLIPSOMETRY DIAGNOSTIC METHOD FOR THE TCO PROCESS 审中-公开
标题翻译：用于TCO过程的具有高通量和ELLIPSOMETRY诊断方法的方法
公开(公告)号：US20130136851A1
公开(公告)日：2013-05-30
申请号：US13307341
申请日：2011-11-30
申请人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhin-Wen Sun
发明人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhin-Wen Sun
IPC分类号： C23C14/54 , C23C14/34 , C23C14/08
CPC分类号： C23C14/08 , C23C14/0042 , C23C14/3464 , C23C14/545 , C23C14/5806 , C23C14/5853
摘要： A method for producing antimony doped tin oxide (ATO) films is discussed wherein the films are deposited by reactive sputtering using a non-poisoned mode and then annealed in an air ambient to fully oxidize the films and improve the resistivity and transmission characteristics, and the non-poisoned mode method could improve the throughput. A method using spectroscopic ellipsometry and an independent measurement of an additional optical or physical property is disclosed which results in a significantly improved prediction of the various optical and physical properties of the film, such that the method made the spectroscopic ellipsometry valuable for monitoring and controlling the process in real time, and valuable for determining the carrier density, mobility and their gradients within the film.
摘要翻译：讨论了制造锑掺杂氧化锡（ATO）膜的方法，其中通过使用非中毒模式的反应溅射沉积膜，然后在空气环境中退火以完全氧化膜并提高电阻率和传输特性，非中毒模式方法可以提高吞吐量。公开了一种使用光谱椭偏仪和附加光学或物理性质的独立测量的方法，其导致对膜的各种光学和物理性质的显着改进的预测，使得该方法使得光谱椭圆偏振值对于监测和控制过程，并且对于确定电影中的载流子密度，迁移率及其梯度是有价值的。

8. 发明申请

US20120168304A1 Physical Vapor Deposition Tool with Gas Separation 审中-公开
标题翻译：具有气体分离的物理气相沉积工具
公开(公告)号：US20120168304A1
公开(公告)日：2012-07-05
申请号：US12982397
申请日：2010-12-30
申请人： Hien Minh Huu Le , Mohd Fadzli Anwar Hassan
发明人： Hien Minh Huu Le , Mohd Fadzli Anwar Hassan
IPC分类号： C23C14/34
CPC分类号： C23C14/3464 , C23C14/0036
摘要： Embodiments of the current invention describe a physical vapor deposition tool. The physical vapor deposition tool includes a housing, a substrate support positioned within the housing and configured to support a substrate, a first process head positioned over the substrate support and having a first target, a second process head positioned over the substrate support and having a second target, and a gas line to provide gas to the first process head. The first process head and the gas line are configured such that the gas provided to the first process head through the gas line interacts with ions ejected from the first target and does not interact with ions ejected from the second target.
摘要翻译：本发明的实施例描述了一种物理气相沉积工具。物理气相沉积工具包括壳体，位于壳体内并被配置为支撑衬底的衬底支撑件，位于衬底支撑件上并具有第一靶的第一工艺头，位于衬底支撑件上方的第二工艺头，第二目标和用于向第一处理头提供气体的气体管线。第一处理头和气体管线被配置为使得通过气体管线提供给第一处理头的气体与从第一靶标喷出的离子相互作用，并且不与从第二靶材排出的离子相互作用。

9. 发明授权

US09045363B2 Low-E panels with ternary metal oxide dielectric layer and method for forming the same 有权
标题翻译：具有三元金属氧化物介电层的低E面板及其形成方法
公开(公告)号：US09045363B2
公开(公告)日：2015-06-02
申请号：US13338018
申请日：2011-12-27
申请人： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun
发明人： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun
IPC分类号： C03C17/23 , C03C17/34 , C03C17/36
CPC分类号： C03C17/36 , C03C17/3618 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C2217/21 , C03C2217/228 , C03C2217/23 , C03C2217/26 , C03C2217/281
摘要： Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.
摘要翻译：本文提供的实施例描述了低e面板和形成低e面板的方法。提供透明基板。在透明基板上形成金属氧化物层。金属氧化物层包括第一元件，第二元件和第三元件。在透明基板上形成反射层。第一元素可以包括锡或锌。第二元素和第三元素可以各自包括锡，锌，锑，硅，锶，钛，铌，锆，镁，铝，钇，镧，铪或铋。金属氧化物层也可以包括氮。

10. 发明授权

US08747626B2 Method of generating high purity bismuth oxide 有权
标题翻译：产生高纯铋氧化物的方法
公开(公告)号：US08747626B2
公开(公告)日：2014-06-10
申请号：US13307301
申请日：2011-11-30
申请人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
发明人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
IPC分类号： C23C14/08 , C23C14/58
CPC分类号： C23C14/086 , C23C14/024 , C23C14/5806 , Y10T428/12549 , Y10T428/265
摘要： A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.
摘要翻译：用于形成和保护高质量氧化铋膜的方法包括在包含Si，碱金属或碱土金属之一的衬底上沉积透明薄膜。透明薄膜在室温和较高温度下是稳定的，并且用作扩散阻挡层，用于将杂质从基底扩散到氧化铋中。使用反应溅射，来自化合物靶的溅射或反应性蒸发来在扩散阻挡层上沉积氧化铋膜。

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