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1. 发明申请

US20110271032A1 ACCESS DEVICE AND MEMORY CONTROLLER 审中-公开
标题翻译：访问设备和存储控制器
公开(公告)号：US20110271032A1
公开(公告)日：2011-11-03
申请号：US13143936
申请日：2010-07-27
申请人： Hideyuki Yamada , Masahiro Nakanishi
发明人： Hideyuki Yamada , Masahiro Nakanishi
IPC分类号： G06F12/02
CPC分类号： G11C16/10 , G06F11/106 , G11C16/3431 , G11C16/349
摘要： Refresh to be performed together with normal processing may fail to be performed for a sufficiently long period of time due to the specification requirements. In this case, data loss can occur in an area that has not been refreshed for a sufficiently long period of time. An access module (130) receives the status of data stored in a nonvolatile memory (120) from a nonvolatile memory module (100), and determines whether the data needs maintenance based on the data status, and also determines whether the maintenance is enabled based on the system status of the access module (130). In this case, data maintenance is performed without being required to be performed together with normal system processing. This enables the maintenance to be performed with a sufficiently long processing time allocated to the maintenance, and improves the data retention properties.
摘要翻译：由于规格要求，与正常处理一起执行的刷新可能不能执行足够长的时间段。在这种情况下，数据丢失可能发生在尚未刷新足够长的时间段的区域。访问模块（130）从非易失性存储器模块（100）接收存储在非易失性存储器（120）中的数据的状态，并且基于数据状态来确定数据是否需要维护，并且还确定是否启用维护关于访问模块（130）的系统状态。在这种情况下，进行数据维护而不需要与正常的系统处理一起执行。这使得能够以分配给维护的足够长的处理时间来执行维护，并且提高数据保持性能。

2. 发明授权

US08327068B2 Memory module, memory controller, nonvolatile storage, nonvolatile storage system, and memory read/write method 失效
标题翻译：内存模块，内存控制器，非易失性存储，非易失性存储系统和内存读/写方式
公开(公告)号：US08327068B2
公开(公告)日：2012-12-04
申请号：US11817532
申请日：2006-03-01
申请人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Manabu Inoue , Masayuki Toyama , Kunihiro Maki
发明人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Manabu Inoue , Masayuki Toyama , Kunihiro Maki
IPC分类号： G06F12/00
CPC分类号： G06F12/0638 , G06F11/1666 , G06F12/0246 , G06F2212/7201
摘要： In a storage having a nonvolatile RAM of destructive read type, the number of restorations attributed to data read from the nonvolatile RAM is decreased, and the overall life of the storage is prolonged. In a storage having a nonvolatile RAM of destructive read type and a volatile RAM and holding the same data in the nonvolatile and volatile RAMs, data is read out of the volatile RAM in reading and data is written in both volatile and nonvolatile RAMs in writing.
摘要翻译：在具有破坏性读取类型的非易失性RAM的存储器中，归因于从非易失性RAM读取的数据的修复数量减少，并且存储器的总体寿命延长。在具有破坏性读取类型的非易失性RAM和易失性RAM的存储器中，并且在非易失性和易失性RAM中保持相同的数据，在读取时从易失性RAM中读出数据，并将数据写入易失性和非易失性RAM两者中。

3. 发明申请

US20110138117A1 MEMORY CONTROLLER, NONVOLATILE STORAGE DEVICE, ACCESSING DEVICE, NONVOLATILE STORAGE SYSTEM, AND METHOD AND PROGRAM FOR WRITING DATA 有权
标题翻译：存储器控制器，非易失性存储设备，访问设备，非易失性存储系统以及用于写入数据的方法和程序
公开(公告)号：US20110138117A1
公开(公告)日：2011-06-09
申请号：US13058352
申请日：2010-05-13
申请人： Masahiro Nakamura , Hirokazu So , Masahiro Nakanishi
发明人： Masahiro Nakamura , Hirokazu So , Masahiro Nakanishi
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7203
摘要： A digital still camera performs temporary high-speed writing when capturing a large number of images in a short time. Lengthy processing for erased block allocation or copying performed inside a nonvolatile storage device may disable the captured images to be written completely (may cause some frames to drop). A nonvolatile storage system includes an access device (1001) and a nonvolatile storage device (1002). A button operation of a user on the access device (1001) causes the mode of data writing to the nonvolatile storage device (1002) to be switched. Temporary high-speed writing is performed into a physical block of a nonvolatile memory (27) from which a plurality of data pieces with different logical addresses and different data sizes have been erased. After the temporary high-speed writing, the written data is relocated into a user storage area (272), and an erased block is newly allocated for subsequent temporary high-speed data writing.
摘要翻译：当在短时间内捕获大量图像时，数字静态照相机执行临时高速写入。在非易失性存储设备内执行的擦除块分配或复制的长时间处理可以禁止捕获的图像被完全写入（可能导致一些帧丢失）。非易失性存储系统包括访问设备（1001）和非易失性存储设备（1002）。访问设备（1001）上的用户的按钮操作使得切换到非易失性存储设备（1002）的数据写入模式。临时高速写入被执行到非易失性存储器（27）的物理块中，具有不同逻辑地址和不同数据大小的多个数据片已经被擦除。在临时高速写入之后，写入的数据被重新定位到用户存储区域（272）中，并且新分配擦除块用于随后的临时高速数据写入。

4. 发明授权

US07921229B2 Host device, storage device, and method for accessing a storage device 有权
标题翻译：主机设备，存储设备和访问存储设备的方法
公开(公告)号：US07921229B2
公开(公告)日：2011-04-05
申请号：US11571597
申请日：2005-06-28
申请人： Masayuki Toyama , Takuji Maeda , Tomoaki Izumi , Shouichi Tsujita , Masahiro Nakanishi , Shinji Inoue
发明人： Masayuki Toyama , Takuji Maeda , Tomoaki Izumi , Shouichi Tsujita , Masahiro Nakanishi , Shinji Inoue
IPC分类号： G06F3/00 , G06F13/12
CPC分类号： G06F3/0659 , G06F3/0607 , G06F3/0623 , G06F3/0679
摘要： A host device (1) adds host function information indicating a function of the host device (1) to a command and transmits it to a storage device (2). The storage device (2) receives the command transmitted from the host device (1) and determines whether the function indicated by the host function information can be processed. When the function can be processed, the function is processed based on the command. When the function cannot be processed, no response is returned or error information is returned. Thus, under simple control, it is possible to prevent data destruction by a host device of an old version.
摘要翻译：主机设备（1）将指示主机设备（1）的功能的主机功能信息添加到命令中，并将其发送到存储设备（2）。存储装置（2）接收从主机装置（1）发送的命令，并且确定是否可以处理由主机功能信息指示的功能。当功能可以处理时，该功能将根据该命令进行处理。当函数无法处理时，不返回任何响应或返回错误信息。因此，在简单的控制下，可以防止主机装置破坏老版本的数据。

5. 发明申请

US20100115185A1 MEMORY CONTROLLER, NONVOLATILE MEMORY DEVICE, ACCESS DEVICE, AND NONVOLATILE MEMORY SYSTEM 有权
标题翻译：存储器控制器，非易失性存储器件，访问器件和非易失性存储器系统
公开(公告)号：US20100115185A1
公开(公告)日：2010-05-06
申请号：US12376648
申请日：2007-08-07
申请人： Tadashi Ono , Tatsuya Adachi , Masahiro Nakanishi , Takuji Maeda
发明人： Tadashi Ono , Tatsuya Adachi , Masahiro Nakanishi , Takuji Maeda
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7201 , G06F2212/7202
摘要： Without corresponding to different address spaces between an access device (100) and a nonvolatile memory device (200), the access device (100) designates a file ID to manage a data storing state only in a physical address space in the nonvolatile memory device (200). The access device (100) sends the nonvolatile memory device (200) a transfer rate through a transfer rate transmitting unit (121). A filling-up rate calculating unit (251) calculates a filling-up rate of a physical block corresponding to an assurance speed required by the access device (100). A remaining amount corresponding to the transfer rate is sought by using the calculated rate and is transmitted to a remaining amount receiving unit (122) of the access device (100).
摘要翻译：在不对应于访问设备（100）和非易失性存储设备（200）之间的不同地址空间的情况下，访问设备（100）指定仅在非易失性存储设备中的物理地址空间中管理数据存储状态的文件ID（ 200）。接入设备（100）通过传输速率发送单元（121）向非易失性存储设备（200）发送传送速率。填补率计算单元计算与访问装置（100）所需的保证速度相对应的物理块的填充率。通过使用计算出的速率来寻找与传送速率对应的剩余量，并将其发送到接入设备（100）的剩余量接收单元（122）。

6. 发明申请

US20090210612A1 MEMORY CONTROLLER, NONVOLATILE MEMORY DEVICE, AND NONVOLATILE MEMORY SYSTEM 审中-公开
标题翻译：内存控制器，非易失性存储器件和非易失性存储器系统
公开(公告)号：US20090210612A1
公开(公告)日：2009-08-20
申请号：US12282693
申请日：2007-03-12
申请人： Masahiro Nakanishi , Masayuki Toyama , Yutaka Nakamura , Yasushi Gohou , Masanori Matsuura , Manabu Inoue , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Shunichi Iwanari , Shinichi Tokumitsu
发明人： Masahiro Nakanishi , Masayuki Toyama , Yutaka Nakamura , Yasushi Gohou , Masanori Matsuura , Manabu Inoue , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Shunichi Iwanari , Shinichi Tokumitsu
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7203
摘要： In rewriting processing of logical sectors, data of the transferred logical sectors are temporarily stored in a memory buffer. When the buffer memory has been full filled with data, the data is written into a flash memory. In rewriting processing for the flash memory including a writing unit (page) having a capacity larger than a minimum writing unit (sector) from outside, the number of executions of the evacuation processing can be reduced and the fast data rewriting can be performed. Thus, it is possible to rationalize the evacuation processing for old data caused in the rewriting in units of sectors and to improve the data rewriting speed.
摘要翻译：在逻辑扇区的重写处理中，传送的逻辑扇区的数据被临时存储在存储缓冲器中。当缓冲存储器已经完全填满数据时，数据被写入闪存。在包括具有大于来自外部的最小写入单位（扇区）的容量的写入单元（页）的闪存的重写处理中，可以减少撤离处理的执行次数并且可以执行快速数据重写。因此，可以使以扇区为单位重写的旧数据的撤离处理合理化，并提高数据重写速度。

7. 发明申请

US20090100290A1 MEMORY CONTROLLER, NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM, AND DATA WRITING METHOD 审中-公开
标题翻译：存储器控制器，非易失性存储器件，非易失性存储器系统和数据写入方法
公开(公告)号：US20090100290A1
公开(公告)日：2009-04-16
申请号：US12064469
申请日：2006-08-09
申请人： Masahiro Nakanishi , Masayuki Toyama , Manabu Inoue , Hirofumi Nakagaki
发明人： Masahiro Nakanishi , Masayuki Toyama , Manabu Inoue , Hirofumi Nakagaki
IPC分类号： G06F11/20 , G06F12/16
CPC分类号： G11C11/5628 , G11C16/102 , G11C16/105 , G11C29/00
摘要： A nonvolatile memory device comprises a nonvolatile memory and a memory controller. The nonvolatile memory includes the same memory cells striding over a plurality of pages. A page information instruction part has the page structure information of the nonvolatile memory. According to this information, a related page identification part identifies a page (related page) in which the data may change. The relation data stored in the related page are temporarily stored into a save memory before an error occurs, and if an error exists, these relation data are used to repair the data that have changed. By this method, in a memory device using a nonvolatile memory including the same memory cells striding over a plurality of pages, even if an error occurs during data writing, the error is repaired and the reliability can be ensured.
摘要翻译：非易失性存储器件包括非易失性存储器和存储器控制器。非易失性存储器包括跨越多个页面的相同存储器单元。页面信息指示部分具有非易失性存储器的页面结构信息。根据该信息，相关的页面识别部件识别数据可能改变的页面（相关页面）。存储在相关页面中的关系数据在错误发生之前临时存储到保存存储器中，并且如果存在错误，则这些关系数据用于修复已经改变的数据。通过这种方法，在使用包括跨越多个页面的相同存储单元的非易失性存储器的存储器件中，即使在数据写入期间发生错误，也可以修复错误并且可靠性得到确保。

8. 发明申请

US20090055576A1 MEMORY CONTROLLER, NONVOLATILE STORAGE DEVICE, NONVOLATILE STORAGE SYSTEM, AND DATA WRITING METHOD 有权
标题翻译：存储器控制器，非易失存储器件，非易失性存储系统和数据写入方法
公开(公告)号：US20090055576A1
公开(公告)日：2009-02-26
申请号：US11908715
申请日：2006-03-09
申请人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Yutaka Nakamura , Masayuki Toyama , Yasushi Goho , Syunichi Iwanari , Yoshihisa Kato , Manabu Inoue
发明人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Yutaka Nakamura , Masayuki Toyama , Yasushi Goho , Syunichi Iwanari , Yoshihisa Kato , Manabu Inoue
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F3/0656 , G06F3/0613 , G06F3/0619 , G06F3/0643 , G06F3/0679 , G06F12/0246 , G06F2212/1016 , G06F2212/7203
摘要： A nonvolatile storage device is provided with a nonvolatile main storage memory (114) whose erase size is larger than a cluster size, and a buffer (106), i.e. a nonvolatile auxiliary storage memory. At the time of writing data in the memory, the data is temporarily stored in the buffer (106), then, a plurality of data in the buffer (106) are collectively taken out to be stored in the main storage memory (114). Data in an original block is saved in a write block in the main storage memory. Thus, the data can be written in the main storage memory (114) at a high speed.
摘要翻译：非易失性存储装置具有擦除大小大于簇大小的非易失性主存储存储器（114）和缓冲器（106），即非易失性辅助存储存储器。在将数据写入存储器时，将数据临时存储在缓冲器（106）中，然后将缓冲器（106）中的多个数据集中取出以存储在主存储器（114）中。原始块中的数据保存在主存储器中的写入块中。因此，可以高速地将数据写入主存储存储器（114）。

9. 发明授权

US07475185B2 Nonvolatile memory system, nonvolatile memory device, memory controller, access device, and method for controlling nonvolatile memory device 有权
标题翻译：非易失性存储器系统，非易失性存储器件，存储器控制器，存取器件以及用于控制非易失性存储器件的方法
公开(公告)号：US07475185B2
公开(公告)日：2009-01-06
申请号：US11280810
申请日：2005-11-17
申请人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Shouichi Tsujita , Takuji Maeda , Shinji Inoue , Manabu Inoue , Masayuki Toyama , Keisuke Sakai
发明人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Shouichi Tsujita , Takuji Maeda , Shinji Inoue , Manabu Inoue , Masayuki Toyama , Keisuke Sakai
IPC分类号： G06F12/00 , G06F13/00
CPC分类号： G06F3/0643 , G06F3/0613 , G06F3/0679
摘要： When a file system control part 155A writes file data into a main memory 142, a file can be easily written continuously and the number of file copy can be decreased at updating a directory entry by writing the file data and a directory entry into different allocation units. In this manner, when using a nonvolatile memory in which physical block size as an erase unit is larger than cluster size, the write performance can be enhanced.
摘要翻译：当文件系统控制部分155A将文件数据写入主存储器142时，可以容易地连续地写入文件，并且可以通过将文件数据和目录条目写入不同的分配单元来更新目录条目来减少文件拷贝的数量。以这种方式，当使用物理块大小作为擦除单位的非易失性存储器大于簇大小时，可以提高写入性能。

10. 发明申请

US20080168252A1 Memory Controller, Nonvolatile Storage Device, Nonvolatile Storage System, and Memory Control Method 有权
标题翻译：存储控制器，非易失存储设备，非易失存储系统和存储器控制方法
公开(公告)号：US20080168252A1
公开(公告)日：2008-07-10
申请号：US11914989
申请日：2006-05-18
申请人： Daisuke Kunimune , Masahiro Nakanishi , Manabu Inoue , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno
发明人： Daisuke Kunimune , Masahiro Nakanishi , Manabu Inoue , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7201
摘要： The invention presents a memory controller capable of shortening the creation time of address management table at the time of initialization of memory card, while avoiding decline of access speed due to process of writing back the address management table in normal operation.The memory controller 114 includes a read-write memory 113 for temporarily storing the address management table 112, a memory control unit 122 for writing, in a nonvolatile memory 115, an address management table temporarily stored in the read-write memory and address range specifying information for specifying the changeover destination address range, when the physical block of data writing destination is changed over from a certain address range to other address range, and an address management table generation unit 107 for reading out the distributed management information used for managing the state of physical block included in the address range specified based on the address range specifying information at the time of initialization, and generating the address management table 112 based on the distributed management information being read out.
摘要翻译：本发明提出了一种能够缩短存储卡初始化时的地址管理表的创建时间的存储器控制器，同时避免由于在正常操作中写入地址管理表的过程而导致的访问速度的下降。存储器控制器114包括用于临时存储地址管理表112的读写存储器113，用于在非易失性存储器115中写入临时存储在读写存储器中的地址管理表和指定地址范围的存储器控制单元122 用于指定切换目的地地址范围的信息，当数据写入目的地的物理块从特定地址范围改变到其他地址范围时，以及地址管理表生成单元107，用于读出用于管理状态的分布式管理信息包括在基于初始化时的地址范围指定信息指定的地址范围内的物理块，并且基于被读出的分布式管理信息生成地址管理表112。

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