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    • 2. 发明授权
    • Key touch adjusting method and device
    • 键触式调节方法及装置
    • US5434566A
    • 1995-07-18
    • US306735
    • 1994-09-15
    • Seiichi IwasaHideyuki Motoyama
    • Seiichi IwasaHideyuki Motoyama
    • G06F3/02G06F3/05H01H13/20H01H13/84H03K17/94B41J5/08
    • H01H13/84H01H2003/008H01H2215/028H01H2215/05H01H2217/006H01H2227/028H01H2239/006H01H2239/022H01H2239/024
    • A key touch adjusting device wherein the position of a key top is detected, and a resistive force corresponding to that position is generated and applied to the key top. The numeral array for the position data and the force data is stored in a memory. To apply hysteresis to a key force profile curve, a RS flip-flop whose output is inverted by the position data is provided to generate different resistive forces in the key top depressing process and the key top returning process. Also disclosed are a method of comparing an actually obtained profile curve with a predetermined profile curve on a display device by detecting both the position of the key top and the depressing force thereof, a method of achieving hysteresis characteristics by storing a plurality of numeral arrays of the depressing force vs. the displacement in a memory of a control computer beforehand and by changing the numeral array according to the position of the key top, a mechanism for restricting a range in which the key top is displaced, and a method of generating an on/off signal corresponding to the position of the key top without using an electrical contact.
    • 一种键触摸调节装置,其中检测到键顶的位置,并且产生与该位置对应的阻力,并将其应用于键顶。 用于位置数据和力数据的数字数组存储在存储器中。 为了对关键力曲线曲线应用滞后,提供其输出由位置数据反转的RS触发器,以在按键顶部按压过程和键顶返回过程中产生不同的阻力。 还公开了一种通过检测键顶的位置和其按压力来比较实际获得的轮廓曲线与显示装置上的预定轮廓曲线的方法,通过存储多个数字阵列来实现滞后特性的方法 预先控制计算机的存储器中的压下力与根据键顶的位置改变数字数组的排列力,限制键顶移动的范围的机构,以及生成 对应于键顶的位置的开/关信号,而不使用电接触。
    • 4. 发明授权
    • Keyboard having plurality of keys therein, each key establishing
different electric contacts
    • 键盘中具有多个键,每个键建立不同的电触点
    • US6103979A
    • 2000-08-15
    • US815131
    • 1997-03-10
    • Hideyuki MotoyamaSeiichi IwasaGoro Watanabe
    • Hideyuki MotoyamaSeiichi IwasaGoro Watanabe
    • H01H23/30G06F1/16G06F3/023H01H13/70
    • G06F1/1616G06F1/1662G06F3/0219G06F3/0234H01H13/70H01H2217/012H01H2221/018
    • A keyboard includes a plurality of keys, wherein each key has an elongated shape elongated in a first direction and selectively establishes two different electrical contacts as a result of being pressed appropriately. The plurality of keys are aligned along a second direction different from the first direction. A length in the first direction of each key is longer than a width in the second direction of the key and shorter than twice the width and carries two different key letters present on a front surface thereof at respective ends of the key. Each key establishes one electric contact if a first end of the key is pressed and establishes another electric contact if a second end of the key is pressed. The front surface of each key is parallelogram-shaped and the plurality of keys are arranged so that the key letters present on the keys are arranged in a standard arrangement. The plurality of keys are arranged so that one side of two long parallel sides of a first key face one side of two long parallel sides of a second key, a first side of two short parallel sides of the first key is aligned with a first side of two short parallel sides of the second key, and a second side of the two short parallel sides of the first key is aligned with a second side of the two short parallel sides of the second key.
    • 键盘包括多个键,其中每个键具有沿第一方向细长的细长形状,并且由于被适当地按压而选择性地建立两个不同的电触点。 多个键沿着与第一方向不同的第二方向排列。 每个键的第一方向上的长度比键的第二方向上的宽度长,并且短于宽度的两倍,并且在键的各个端部具有存在于其前表面上的两个不同的键字母。 如果按下钥匙的第一端,则每个钥匙都会建立一个电气触点,如果按下钥匙的第二端,则建立另一个电气触点。 每个键的前表面是平行四边形的,并且多个键被布置成使得存在于键上的键字母以标准布置被布置。 多个按键被布置成使得第一键的两个长平行侧的一侧面向第二键的两个长平行侧的一侧,第一键的两个短平行侧的第一侧与第一键对齐 第二键的两个短平行侧的第二侧与第二键的两个短平行侧的第二侧与第二键的两个短平行侧的第二侧对准。
    • 8. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US08062947B2
    • 2011-11-22
    • US12338345
    • 2008-12-18
    • Seiichi Iwasa
    • Seiichi Iwasa
    • H01L29/72
    • H01L21/823418H01L21/823412H01L21/823437H01L21/823456H01L21/823475H01L29/66636H01L29/66659H01L29/7834H01L29/7835H01L29/7848
    • The present invention relates to a method of manufacturing a semiconductor device having a shared contact for connection between a source/drain region and a gate electrode. After formation of a gate electrode via a gate insulating film on a semiconductor substrate, a top surface of the substrate is covered with a cover film. After removal of the cover film from at least one of sidewall surface of the gate electrode and a part of the top surface of the substrate adjacent to the sidewall surface, a semiconductor layer is epitaxially grown on a top surface of an exposed substrate to electrically connect the substrate and the at least one sidewall surface of the gate electrode. Then, a source/drain region is formed in a top surface part of the substrate or the semiconductor layer using the gate electrode as a mask.
    • 本发明涉及一种制造半导体器件的方法,该半导体器件具有用于在源/漏区和栅电极之间连接的共用接触。 在通过半导体衬底上的栅极绝缘膜形成栅极电极之后,用覆盖膜覆盖衬底的顶表面。 在从栅电极的侧壁表面和与侧壁表面相邻的衬底的顶表面的一部分中的至少一个去除覆盖膜之后,在暴露的衬底的顶表面上外延生长半导体层以电连接 基板和栅电极的至少一个侧壁表面。 然后,使用栅极电极作为掩模,在衬底或半导体层的顶表面部分中形成源极/漏极区域。