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1. 发明授权

US6133617A High breakdown voltage semiconductor device 失效
标题翻译：高击穿电压半导体器件
公开(公告)号：US6133617A
公开(公告)日：2000-10-17
申请号：US393273
申请日：1999-09-10
申请人： Keizo Hirayama , Hideyuki Funaki , Fumito Suzuki , Akio Nakagawa
发明人： Keizo Hirayama , Hideyuki Funaki , Fumito Suzuki , Akio Nakagawa
IPC分类号： H01L29/06 , H01L29/40 , H01L29/47 , H01L29/861 , H01L29/872 , H01L27/095 , H01L29/812 , H01L31/07
CPC分类号： H01L29/404 , H01L29/0692 , H01L29/8611 , H01L29/872 , Y10S257/928
摘要： Disclosed is a high breakdown voltage semiconductor device comprising a semiconductor substrate, an active layer consisting of a high resistivity semiconductor layer of a first conductivity type formed on the substrate with an insulating layer interposed therebetween, a first impurity region of the first conductivity type formed within the active layer, a second impurity region of a second conductivity type formed within the active layer, a third impurity region of the second conductivity type formed within the second impurity region and having a high impurity concentration, a first electrode being in ohmic contact with the first impurity region and the fourth impurity region, and a second electrode being in Schottky contact with the second impurity region and in ohmic contact with the third impurity region.
摘要翻译：公开了一种高耐压电压半导体器件，包括半导体衬底，由在衬底上形成有绝缘层的第一导电类型的高电阻率半导体层组成的有源层，其间形成有第一导电类型的第一杂质区，有源层，在有源层内形成的第二导电类型的第二杂质区，形成在第二杂质区内并具有高杂质浓度的第二导电类型的第三杂质区，第一电极与第一杂质区和第四杂质区，以及与第二杂质区肖特基接触并与第三杂质区欧姆接触的第二电极。

2. 发明授权

US6150702A Lateral high-voltage semiconductor device having an outwardly extended electrode 失效
标题翻译：具有向外延伸的电极的横向高压半导体器件
公开(公告)号：US6150702A
公开(公告)日：2000-11-21
申请号：US340721
申请日：1999-06-29
申请人： Hideyuki Funaki , Akio Nakagawa , Fumito Suzuki
发明人： Hideyuki Funaki , Akio Nakagawa , Fumito Suzuki
IPC分类号： H01L29/06 , H01L29/40 , H01L29/417 , H01L29/78 , H01L29/861 , H01L23/58
CPC分类号： H01L29/404 , H01L29/417 , H01L29/8611
摘要： The breakdown strength of a lateral diode using a field plate is improved. There are provided a track-like first field plate connected to an anode electrode, a track-like second field plate formed outside the first field plate and connected to a cathode electrode, track-like third field plates provided concentrically between the first and second field plates, and fourth field plates provided so as to cross the first to third field plates and connected to each of them. The fourth field plates are so positioned that they allow more current to flow in the corner sections and under the electrodes where an electric field is liable to concentrate.
摘要翻译：使用场板的横向二极管的击穿强度得到改善。提供了连接到阳极电极的轨道状第一场板，形成在第一场板外部并连接到阴极电极的轨道状第二场板，同心地设置在第一场和第二场之间的轨道状第三场板板和第四场板，其设置成穿过第一至第三场板并且连接到它们中的每一个。第四场板的定位使得它们允许更多的电流在电场易于集中的拐角部分和电极下方流动。

3. 发明授权

US5982015A High breakdown voltage semiconductor device 失效
公开(公告)号：US5982015A
公开(公告)日：1999-11-09
申请号：US251489
申请日：1999-02-17
申请人： Keizo Hirayama , Hideyuki Funaki , Fumito Suzuki , Akio Nakagawa
发明人： Keizo Hirayama , Hideyuki Funaki , Fumito Suzuki , Akio Nakagawa
IPC分类号： H01L29/06 , H01L29/40 , H01L29/47 , H01L29/861 , H01L29/872 , H01L27/095 , H01L29/812 , H01L31/07
CPC分类号： H01L29/404 , H01L29/0692 , H01L29/8611 , H01L29/872 , Y10S257/928
摘要： Disclosed is a high breakdown voltage semiconductor device comprising a semiconductor substrate, an active layer consisting of a high resistivity semiconductor layer of a first conductivity type formed on the substrate with an insulating layer interposed therebetween, a first impurity region of the first conductivity type formed within the active layer, a second impurity region of a second conductivity type formed within the active layer, a third impurity region of the second conductivity type formed within the second impurity region and having a high impurity concentration, a first electrode being in ohmic contact with the first impurity region and the fourth impurity region, and a second electrode being in Schottky contact with the second impurity region and in ohmic contact with the third impurity region.

4. 发明授权

US08927972B2 Current-amplifying transistor device and current-amplifying, light-emitting transistor device 有权
标题翻译：电流放大晶体管器件和电流放大，发光晶体管器件
公开(公告)号：US08927972B2
公开(公告)日：2015-01-06
申请号：US13392409
申请日：2010-09-03
申请人： Ken-ichi Nakayama , Junji Kido , Yong-Jin Pu , Fumito Suzuki , Naomi Oguma , Naoki Hirata
发明人： Ken-ichi Nakayama , Junji Kido , Yong-Jin Pu , Fumito Suzuki , Naomi Oguma , Naoki Hirata
IPC分类号： H01L29/08 , H01L51/00 , H01L51/52 , B82Y10/00 , H01L51/05
CPC分类号： H01L51/5296 , B82Y10/00 , H01L51/0046 , H01L51/0053 , H01L51/0067 , H01L51/0081 , H01L51/0504
摘要： A current-amplifying transistor device is provided, between an emitter electrode and a collector electrode, with two organic semiconductor layers and a sheet-shaped base electrode. One of the organic semiconductor layers is arranged between the emitter electrode and the base collector electrode, and has a diode structure of a p-type organic semiconductor layer and an n-type p-type organic semiconductor layer. A current-amplifying, light-emitting transistor device including the current-amplifying transistor device and an organic EL device portion formed in the current-amplifying transistor device is also disclosed.
摘要翻译：在发射电极和集电极之间设置有两个有机半导体层和片状基极的电流放大晶体管器件。有机半导体层之一配置在发射电极和集电极之间，具有p型有机半导体层和n型p型有机半导体层的二极管结构。还公开了一种电流放大型发光晶体管器件，其包括形成在电流放大晶体管器件中的电流放大晶体管器件和有机EL器件部分。

5. 发明申请

US20140186766A1 RESIN COMPOSITION FOR MASKS 有权
标题翻译：树脂组合物
公开(公告)号：US20140186766A1
公开(公告)日：2014-07-03
申请号：US14237962
申请日：2012-06-20
申请人： Michiya Higuchi , Fumito Suzuki , Yoshio Sakai , Hisashi Marusawa
发明人： Michiya Higuchi , Fumito Suzuki , Yoshio Sakai , Hisashi Marusawa
IPC分类号： G03F7/038
CPC分类号： G03F7/0385 , C08G59/1466 , C08G59/40 , C08G59/42 , C08L63/10 , G03F7/027 , G03F7/032 , G03F7/038 , G03F7/0384 , G03F7/0388 , H05K3/287 , H05K3/3452
摘要： The present invention provides a resin composition for resist to be efficiently formed into a cured product with high properties of crack resistance, bulge resistance, protrusion resistance, and the like for filling a through-hole, a via hole, or the like with the cured product. The resin composition for masks in accordance with the present invention contains a first resin and a second resin. The first resin is prepared by an addition reaction of polybasic acid anhydride with an adduct of an ethylenically unsaturated compound having a carboxyl group and bifunctional epoxy resin. The second resin having; a group obtained by an addition reaction of an epoxy group with monocarboxylic acid; and a group obtained by addition reaction of an epoxy group with polybasic acid.
摘要翻译：本发明提供一种抗蚀剂用树脂组合物，其能够有效地形成具有高耐龟裂性，耐膨胀性，抗突出性等的固化物，用于填充通孔，通孔等，固化产品。根据本发明的掩模用树脂组合物含有第一树脂和第二树脂。第一树脂通过多元酸酐与具有羧基的烯键式不饱和化合物和双官能环氧树脂的加合物的加成反应制备。第二树脂具有：通过环氧基与一元羧酸的加成反应得到的基团; 和通过环氧基与多元酸的加成反应获得的基团。

6. 发明授权

US06677622B2 Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure 失效
标题翻译：具有绝缘栅双极晶体管的半导体器件，具有绝缘隔离结构
公开(公告)号：US06677622B2
公开(公告)日：2004-01-13
申请号：US10090823
申请日：2002-03-06
申请人： Fumito Suzuki , Hitoshi Takahashi , Haruki Arai , Yoshihiro Yamaguchi
发明人： Fumito Suzuki , Hitoshi Takahashi , Haruki Arai , Yoshihiro Yamaguchi
IPC分类号： H01L2974
CPC分类号： H01L29/66325 , H01L29/7394
摘要： A semiconductor substrate is of first-conductivity-type and has a principal surface. A first semiconductor region and a second semiconductor region are of second-conductivity-type and formed apart from each other in the principal surface of the semiconductor substrate. A third semiconductor region is of second-conductivity-type and formed on the first semiconductor region. The third semiconductor region has an impurity concentration higher than that of the first semiconductor region. A fourth semiconductor region is of first-conductivity-type and formed on the third semiconductor region. A first main electrode is formed on the fourth semiconductor region. A second main electrode is formed on the second semiconductor region. A gate electrode is formed, at least on the first semiconductor region and on the principal surface of the semiconductor substrate between the fourth semiconductor region and the second semiconductor region, with a gate insulating film therebetween.
摘要翻译：半导体衬底是第一导电型并具有主表面。第一半导体区域和第二半导体区域是第二导电型并且在半导体衬底的主表面中彼此分开形成。第三半导体区域是第二导电型并形成在第一半导体区域上。第三半导体区域的杂质浓度高于第一半导体区域。第四半导体区域是第一导电型并形成在第三半导体区域上。第一主电极形成在第四半导体区域上。第二主电极形成在第二半导体区域上。至少在第一半导体区域和第四半导体区域与第二半导体区域之间的半导体衬底的主表面上形成栅电极，其间具有栅极绝缘膜。

7. 发明授权

US09128375B2 Resin composition for masks 有权
标题翻译：口罩树脂组合物
公开(公告)号：US09128375B2
公开(公告)日：2015-09-08
申请号：US14237962
申请日：2012-06-20
申请人： Michiya Higuchi , Fumito Suzuki , Yoshio Sakai , Hisashi Marusawa
发明人： Michiya Higuchi , Fumito Suzuki , Yoshio Sakai , Hisashi Marusawa
IPC分类号： G03F7/038 , C08G59/40 , G03F7/027 , H05K3/28 , C08G59/17 , C08G59/42 , C08L63/10 , G03F7/032 , H05K3/34
CPC分类号： G03F7/0385 , C08G59/1466 , C08G59/40 , C08G59/42 , C08L63/10 , G03F7/027 , G03F7/032 , G03F7/038 , G03F7/0384 , G03F7/0388 , H05K3/287 , H05K3/3452
摘要： The present invention provides a resin composition for resist to be efficiently formed into a cured product with high properties of crack resistance, bulge resistance, protrusion resistance, and the like for filling a through-hole, a via hole, or the like with the cured product. The resin composition for masks in accordance with the present invention contains a first resin and a second resin. The first resin is prepared by an addition reaction of polybasic acid anhydride with an adduct of an ethylenically unsaturated compound having a carboxyl group and bifunctional epoxy resin. The second resin having; a group obtained by an addition reaction of an epoxy group with monocarboxylic acid; and a group obtained by addition reaction of an epoxy group with polybasic acid.
摘要翻译：本发明提供一种抗蚀剂用树脂组合物，其能够有效地形成具有高耐龟裂性，耐膨胀性，抗突出性等的固化物，用于填充通孔，通孔等，固化产品。根据本发明的掩模用树脂组合物含有第一树脂和第二树脂。第一树脂通过多元酸酐与具有羧基的烯属不饱和化合物和双官能环氧树脂的加合物的加成反应制备。第二树脂具有：通过环氧基与一元羧酸的加成反应获得的基团; 和通过环氧基与多元酸的加成反应获得的基团。

8. 发明申请

US20120146011A1 Current-Amplifying Transistor Device and Current-Amplifying, Light-Emitting Transistor Device 有权
标题翻译：电流放大晶体管器件和电流放大，发光晶体管器件
公开(公告)号：US20120146011A1
公开(公告)日：2012-06-14
申请号：US13392409
申请日：2010-09-03
申请人： Ken-ichi Nakayama , Junji Kido , Yong-Jin Pu , Fumito Suzuki , Naomi Oguma , Naoki Hirata
发明人： Ken-ichi Nakayama , Junji Kido , Yong-Jin Pu , Fumito Suzuki , Naomi Oguma , Naoki Hirata
IPC分类号： H01L51/30
CPC分类号： H01L51/5296 , B82Y10/00 , H01L51/0046 , H01L51/0053 , H01L51/0067 , H01L51/0081 , H01L51/0504
摘要： A current-amplifying transistor device is provided, between an emitter electrode and a collector electrode, with two organic semiconductor layers and a sheet-shaped base electrode. One of the organic semiconductor layers is arranged between the emitter electrode and the base collector electrode, and has a diode structure of a p-type organic semiconductor layer and an n-type p-type organic semiconductor layer. A current-amplifying, light-emitting transistor device including the current-amplifying transistor device and an organic EL device portion formed in the current-amplifying transistor device is also disclosed.
摘要翻译：在发射电极和集电极之间设置有两个有机半导体层和片状基极的电流放大晶体管器件。有机半导体层之一配置在发射电极和集电极之间，具有p型有机半导体层和n型p型有机半导体层的二极管结构。还公开了一种电流放大型发光晶体管器件，其包括形成在电流放大晶体管器件中的电流放大晶体管器件和有机EL器件部分。

9. 发明授权

US06713794B2 Lateral semiconductor device 失效
标题翻译：侧面半导体器件
公开(公告)号：US06713794B2
公开(公告)日：2004-03-30
申请号：US09897058
申请日：2001-07-03
申请人： Fumito Suzuki
发明人： Fumito Suzuki
IPC分类号： H01L2976
CPC分类号： H01L29/7824 , H01L29/0619 , H01L29/66325 , H01L29/7394 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including a semiconductor base, a first semiconductor region formed in the semiconductor base, a second semiconductor region formed in the semiconductor base, a third semiconductor region formed in the first semiconductor region, a first main electrode which is formed on the first and third semiconductor regions, a second main electrode which is formed on the second semiconductor region, an insulating film formed on the semiconductor base and first semiconductor region, and a gate electrode formed on the insulating film. The fourth semiconductor region is formed in the semiconductor base between the first and second semiconductor regions below an end region of the gate electrode.
摘要翻译：一种半导体器件，包括半导体基底，形成在半导体基底中的第一半导体区域，形成在半导体基底中的第二半导体区域，形成在第一半导体区域中的第三半导体区域，形成在第一半导体区域中的第一主电极第三半导体区域，形成在第二半导体区域上的第二主电极，形成在半导体基底和第一半导体区域上的绝缘膜，以及形成在绝缘膜上的栅电极。第四半导体区域形成在栅电极的端部区域下方的第一和第二半导体区域之间的半导体基底中。

10. 发明授权

US5821031A Photosensitive solder resist ink, printed circuit board and production thereof 失效
标题翻译：感光性阻焊油墨，印刷电路板及其制造
公开(公告)号：US5821031A
公开(公告)日：1998-10-13
申请号：US648002
申请日：1996-05-22
申请人： Soichi Hashimoto , Fumito Suzuki , Toshikazu Oda
发明人： Soichi Hashimoto , Fumito Suzuki , Toshikazu Oda
IPC分类号： G03F7/027 , G03F7/033 , G03F7/038 , H05K3/28 , G03F7/40 , G03F7/028 , G03F7/38
CPC分类号： G03F7/033 , G03F7/027 , G03F7/0388 , H05K3/287
摘要： Disclosed herein is a photosensitive solder resist ink capable of development with a dilute alkaline solution. It has a wide pre-curing latitude. It permits the pre-cured board to be stored for a long period of time. It is superior in resolution, sensitivity, and solder resistance. Disclosed also herein is a printed circuit board having good adhesion, chemical resistance, electrical properties, gold plating resistance, solder heat resistance, and electrocorrosion resistance. Disclosed also herein is a process for producing said printed circuit board by using said solder resist ink. The photosensitive solder resist ink comprises (A) an ultraviolet-curable resin containing 0-20 wt % of aromatic ring moiety which is obtained by reacting a polymer composed of (a) 40-100 mol % of ethylenically unsaturated monomer having an epoxy group and (b) 0-60 mol % of ethylenically unsaturated monomer capable of copolymerization therewith, with (meth)acrylic acid in an amount of 0.7-1.2 equivalents per epoxy equivalent of said polymer and with a saturated or unsaturated polybasic acid anhydride; (B) an epoxy compound soluble in a diluent; (C) a photopolymerization initiator; and (D) a diluent.
摘要翻译： PCT No.PCT / JP95 / 02017 Sec。 371日期：1996年5月22日 102（e）日期1996年5月22日PCT提交1995年10月2日PCT公布。公开号WO96 / 11239 日期1996年4月18日在此公开的是能够用稀碱溶液显影的感光性阻焊油墨。它具有宽的预固化纬度。它允许预固化板长时间存放。它在分辨率，灵敏度和焊料阻力方面优越。此处还公开了具有良好的附着力，耐化学性，电性能，耐镀金性，焊料耐热性和耐电腐蚀性的印刷电路板。本文还公开了通过使用所述阻焊油墨制造所述印刷电路板的方法。感光性阻焊油墨包含（A）含有0〜20重量％芳香环部分的紫外线固化树脂，其通过使（a）40-100摩尔％的具有环氧基的烯属不饱和单体和（b）0-60摩尔％能够与其共聚的烯属不饱和单体，与（甲基）丙烯酸的量相对于所述聚合物的环氧当量为0.7-1.2当量和饱和或不饱和多元酸酐; （B）可溶于稀释剂的环氧化合物; （C）光聚合引发剂; 和（D）稀释剂。

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