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1. 发明申请

US20110039395A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110039395A1
公开(公告)日：2011-02-17
申请号：US12910320
申请日：2010-10-22
申请人： Hideto OHNUMA , Kenichiro MAKINO , Yoichi IIKUBO , Masaharu NAGAI , Aiko SHIGA
发明人： Hideto OHNUMA , Kenichiro MAKINO , Yoichi IIKUBO , Masaharu NAGAI , Aiko SHIGA
IPC分类号： H01L21/762
CPC分类号： H01L21/84 , H01L21/76254 , H01L29/66772 , H01L29/78621
摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.
摘要翻译：即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。可以在施加偏置电压的状态下进行等离子体处理。

2. 发明申请

US20090325363A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090325363A1
公开(公告)日：2009-12-31
申请号：US12489594
申请日：2009-06-23
申请人： Hideto OHNUMA , Kenichiro MAKINO , Yoichi IIKUBO , Masaharu NAGAI , Aiko SHIGA
发明人： Hideto OHNUMA , Kenichiro MAKINO , Yoichi IIKUBO , Masaharu NAGAI , Aiko SHIGA
IPC分类号： H01L21/762
CPC分类号： H01L21/84 , H01L21/76254 , H01L29/66772 , H01L29/78621
摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.
摘要翻译：即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。可以在施加偏置电压的状态下进行等离子体处理。

3. 发明申请

US20100203706A1 METHOD OF MANUFACTURING AN SOI SUBSTRATE AND METHOD OF MANUFACUTIRNG A SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底的方法和制造半导体器件的方法
公开(公告)号：US20100203706A1
公开(公告)日：2010-08-12
申请号：US12762600
申请日：2010-04-19
申请人： Hideto OHNUMA , Ryota IMAHAYASHI , Yoichi IIKUBO , Kenichiro MAKINO , Sho NAGAMATSU
发明人： Hideto OHNUMA , Ryota IMAHAYASHI , Yoichi IIKUBO , Kenichiro MAKINO , Sho NAGAMATSU
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/78654
摘要： It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.
摘要翻译：本发明的一个目的是提供一种制造具有单晶半导体层的SOI衬底的方法，即使当具有低耐热温度的衬底如玻璃衬底或并且进一步通过使用这种SOI衬底制造具有高可靠性的半导体器件。将与半导体基板分离并与具有绝缘面的支撑基板接合的半导体层用电磁波照射，对半导体层的表面进行抛光处理。半导体层的区域的至少一部分通过电磁波的照射而熔融，能够降低半导体层的晶体缺陷。此外，半导体层的表面可以通过抛光处理被抛光和平坦化。

4. 发明申请

US20090137101A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US20090137101A1
公开(公告)日：2009-05-28
申请号：US12247470
申请日：2008-10-08
申请人： Shunpei YAMAZAKI , Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO
发明人： Shunpei YAMAZAKI , Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO
IPC分类号： H01L21/71
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： To provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like is used. The semiconductor layer is transferred to a supporting substrate by the steps of irradiating a semiconductor wafer with ions from one surface to form a damaged layer; forming an insulating layer over one surface of the semiconductor wafer; attaching one surface of the supporting substrate to the insulating layer formed over the semiconductor wafer and performing heat treatment to bond the supporting substrate to the semiconductor wafer; and performing separation at the damaged layer into the semiconductor wafer and the supporting substrate. The damaged layer remaining partially over the semiconductor layer is removed by wet etching and a surface of the semiconductor layer is irradiated with a laser beam.
摘要翻译：为了提供一种制造具有半导体层的SOI衬底的方法，即使使用诸如玻璃衬底等的耐热温度低的衬底也可以实际使用。通过以下步骤将半导体层转移到支撑衬底：从一个表面照射半导体晶片以形成损伤层; 在所述半导体晶片的一个表面上形成绝缘层; 将所述支撑基板的一个表面附接到形成在所述半导体晶片上的绝缘层，并进行热处理以将所述支撑基板接合到所述半导体晶片; 并且在所述损伤层处进行到所述半导体晶片和所述支撑基板的分离。通过湿蚀刻除去半导体层上部分残留的损伤层，并用激光束照射半导体层的表面。

5. 发明申请

US20090072343A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：半导体器件和电子器件
公开(公告)号：US20090072343A1
公开(公告)日：2009-03-19
申请号：US12207634
申请日：2008-09-10
申请人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
发明人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
IPC分类号： H01L29/00
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/76254 , H01L21/84 , H01L27/1214 , H01L29/4908 , H01L29/66772 , H01L29/78603 , H01L29/78654
摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.
摘要翻译：使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。而且，不用化学抛光而形成的高性能半导体器件。此外，使用该半导体器件的电子设备。包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为大于或等于1nm且小于或等于7nm。或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

6. 发明申请

US20100006940A1 SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US20100006940A1
公开(公告)日：2010-01-14
申请号：US12497720
申请日：2009-07-06
申请人： Tetsuya KAKEHATA , Hideto OHNUMA , Yoshiaki YAMAMOTO , Kenichiro MAKINO
发明人： Tetsuya KAKEHATA , Hideto OHNUMA , Yoshiaki YAMAMOTO , Kenichiro MAKINO
IPC分类号： H01L29/786 , H01L27/12 , H01L21/762
CPC分类号： H01L27/1218 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/78603 , H01L31/0352
摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.
摘要翻译：本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

7. 发明申请

US20110316082A1 SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US20110316082A1
公开(公告)日：2011-12-29
申请号：US13230086
申请日：2011-09-12
申请人： Tetsuya KAKEHATA , Hideto OHNUMA , Yoshiaki YAMAMOTO , Kenichiro MAKINO
发明人： Tetsuya KAKEHATA , Hideto OHNUMA , Yoshiaki YAMAMOTO , Kenichiro MAKINO
IPC分类号： H01L29/786 , H01L29/02
CPC分类号： H01L27/1218 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/78603 , H01L31/0352
摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.
摘要翻译：本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

8. 发明申请

US20110212597A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110212597A1
公开(公告)日：2011-09-01
申请号：US13106301
申请日：2011-05-12
申请人： Kenichiro MAKINO
发明人： Kenichiro MAKINO
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L27/1274 , H01L29/66772
摘要： Suppression of generation of a stripe pattern (unevenness) when an SOI substrate is manufactured by a glass substrate and a single crystal semiconductor substrate bonded to each other. A single crystal semiconductor substrate is irradiated with ions so that a fragile region is formed in the single crystal semiconductor substrate; a depression or a projection is formed in a region of a surface of an insulating layer provided on the single crystal semiconductor substrate, the region corresponding to the periphery of the single crystal semiconductor substrate; the single crystal semiconductor substrate is bonded to a base substrate; thermal treatment is performed thereon to separate the single crystal semiconductor substrate at the fragile region, so that a single crystal semiconductor layer is formed over the base substrate; and the single crystal semiconductor layer in the region corresponding to the periphery is removed.
摘要翻译：当通过由玻璃基板和单晶半导体基板相互结合制造SOI基板时，抑制产生条纹图案（不均匀）。用离子照射单晶半导体衬底，使得在单晶半导体衬底中形成易碎区; 在设置在单晶半导体衬底上的绝缘层的与单晶半导体衬底的周边相对应的区域的区域中形成凹陷或突起; 单晶半导体基板被接合到基底基板上; 在其上进行热处理以在脆性区域分离单晶半导体衬底，从而在基底衬底上形成单晶半导体层; 在与周边对应的区域中的单晶半导体层被去除。

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