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1. 发明授权

US07800365B2 Magnetic detection device and electrical product 有权
标题翻译：磁性检测装置和电气产品
公开(公告)号：US07800365B2
公开(公告)日：2010-09-21
申请号：US12623029
申请日：2009-11-20
申请人： Kiyoshi Sato , Hideto Ando , Hideki Gochou
发明人： Kiyoshi Sato , Hideto Ando , Hideki Gochou
IPC分类号： G01R33/04
CPC分类号： G01R33/093 , B82Y25/00
摘要： An integrated circuit is provided with two output terminals and a mode switch circuit which includes a pair of switch terminals. The mode switch circuit is allowed to switch the output mode between the 1-output mode for outputting the (+) magnetic field detection signal and the (−) magnetic field detection signal from the output terminal, and the 2-output mode for outputting the (+) magnetic field signal from the output terminal as one of the output terminals, and the (−) magnetic field detection signal from the output terminal as the other output terminal in accordance with the shortcircuit state or the non-shortcircuit state between the switch terminals. The switch terminals are exposed on the surface of the device, and the shortcircuit state and the non-shortcircuit state may be externally adjusted.
摘要翻译：集成电路具有两个输出端子和一个包括一对开关端子的模式开关电路。允许模式切换电路在用于输出（+）磁场检测信号和来自输出端子的（ - ））磁场检测信号的1输出模式之间切换输出模式，以及用于输出（+）磁场信号作为输出端子之一，以及根据短路状态或开关之间的非短路状态的来自输出端子的（ - ）磁场检测信号作为另一输出端子终端。开关端子被暴露在器件的表面上，并且可以从外部调节短路状态和非短路状态。

2. 发明申请

US20100079135A1 MAGNETIC DETECTING DEVICE AND METHOD FOR MAKING THE SAME, AND ANGLE DETECTING APPARATUS, POSITION DETECTING APPARATUS, AND MAGNETIC SWITCH EACH INCLUDING THE MAGNETIC DETECTING DEVICE 审中-公开
标题翻译：磁性检测装置及其制造方法，以及角度检测装置，位置检测装置以及包括磁性检测装置的磁性开关
公开(公告)号：US20100079135A1
公开(公告)日：2010-04-01
申请号：US12629511
申请日：2009-12-02
申请人： Hideto Ando , Kiyoshi Sato
发明人： Hideto Ando , Kiyoshi Sato
IPC分类号： G01B7/14 , G01R33/00
CPC分类号： G01R33/093 , B82Y25/00
摘要： In a magnetic detecting device, conductive patterns are formed on a substrate in a surrounding region outside chips, except for a region between the chips. Inner connection pads formed on each of the chips are wire-bonded to their corresponding conductive patterns, so that the chips are electrically connected to each other.
摘要翻译：在磁检测装置中，除了芯片之间的区域之外，在芯片外的周围区域中的基板上形成导电图案。形成在每个芯片上的内部连接焊盘被引线接合到它们相应的导电图案，使得芯片彼此电连接。

3. 发明授权

US07345477B1 Magnetic detection device including resistance adjusting unit 有权
标题翻译：磁检测装置包括电阻调节单元
公开(公告)号：US07345477B1
公开(公告)日：2008-03-18
申请号：US11678846
申请日：2007-02-26
申请人： Hideto Ando , Kiyoshi Sato , Hiroyuki Nakada
发明人： Hideto Ando , Kiyoshi Sato , Hiroyuki Nakada
IPC分类号： G01R33/02 , H01L29/82
CPC分类号： G01R33/093 , B82Y25/00 , H01L43/08
摘要： In a magnetic detection device for obtaining an output from between a variable resistance element using the magnetoresistance effect and a reference resistance element, a balance between resistance values in the device can be easily adjusted in a wide range. A voltage is applied to a resistance adjusting unit, a reference resistance element, and a variable resistance element, which are serially connected, and is also applied to another variable resistance element, another reference resistance element, and another resistance adjusting unit, which are serially connected. When subjected to a magnetic field of a predetermined size, resistance values of the variable resistance elements change, and as a result, the potentials of output terminals change. Each of the resistance adjusting units includes serially connected parallel portions each including a plurality of parallel connected resistance elements. The resistance value of the resistance adjusting unit can be changed by bringing one of the parallel connected resistance elements into a non-conduction state.
摘要翻译：在用于获得使用磁阻效应的可变电阻元件的输出与参考电阻元件之间的输出的磁性检测装置中，可以容易地在宽范围内调节器件中的电阻值之间的平衡。电压被施加到串联连接的电阻调节单元，参考电阻元件和可变电阻元件，并且还被施加到串联的另一个可变电阻元件，另一个参考电阻元件和另一个电阻调节单元连接的。当受到预定尺寸的磁场时，可变电阻元件的电阻值改变，结果导致输出端子的电位变化。每个电阻调节单元包括串联连接的并联部分，每个并联部分包括多个平行连接的电阻元件。可以通过使并联的电阻元件中的一个成为非导通状态来改变电阻调节单元的电阻值。

4. 发明申请

US20100066359A1 MAGNETIC DETECTION DEVICE AND ELECTRICAL PRODUCT 有权
标题翻译：磁性检测装置和电子产品
公开(公告)号：US20100066359A1
公开(公告)日：2010-03-18
申请号：US12623029
申请日：2009-11-20
申请人： Kiyoshi Sato , Hideto Ando , Hideki Gochou
发明人： Kiyoshi Sato , Hideto Ando , Hideki Gochou
IPC分类号： G01R33/00
CPC分类号： G01R33/093 , B82Y25/00
摘要： An integrated circuit is provided with two output terminals and a mode switch circuit which includes a pair of switch terminals. The mode switch circuit is allowed to switch the output mode between the 1-output mode for outputting the (+) magnetic field detection signal and the (−) magnetic field detection signal from the output terminal, and the 2-output mode for outputting the (+) magnetic field signal from the output terminal as one of the output terminals, and the (−) magnetic field detection signal from the output terminal as the other output terminal in accordance with the shortcircuit state or the non-shortcircuit state between the switch terminals. The switch terminals are exposed on the surface of the device, and the shortcircuit state and the non-shortcircuit state may be externally adjusted.
摘要翻译：集成电路具有两个输出端子和一个包括一对开关端子的模式开关电路。允许模式切换电路在用于输出（+）磁场检测信号和来自输出端子的（ - ））磁场检测信号的1输出模式之间切换输出模式，以及用于输出（+）磁场信号作为输出端子之一，以及根据短路状态或开关之间的非短路状态的来自输出端子的（ - ）磁场检测信号作为另一输出端子终端。开关端子被暴露在器件的表面上，并且可以从外部调节短路状态和非短路状态。

5. 发明申请

US20080061777A1 MAGNETIC DETECTION DEVICE INCLUDING RESISTANCE ADJUSTING UNIT 有权
标题翻译：磁阻检测装置，包括电阻调节单元
公开(公告)号：US20080061777A1
公开(公告)日：2008-03-13
申请号：US11678846
申请日：2007-02-26
申请人： Hideto Ando , Kiyoshi Sato , Hiroyuki Nakada
发明人： Hideto Ando , Kiyoshi Sato , Hiroyuki Nakada
IPC分类号： G01R33/02 , H01L43/08
CPC分类号： G01R33/093 , B82Y25/00 , H01L43/08
摘要： In a magnetic detection device for obtaining an output from between a variable resistance element using the magnetoresistance effect and a reference resistance element, a balance between resistance values in the device can be easily adjusted in a wide range. A voltage is applied to a resistance adjusting unit, a reference resistance element, and a variable resistance element, which are serially connected, and is also applied to another variable resistance element, another reference resistance element, and another resistance adjusting unit, which are serially connected. When subjected to a magnetic field of a predetermined size, resistance values of the variable resistance elements change, and as a result, the potentials of output terminals change. Each of the resistance adjusting units includes serially connected parallel portions each including a plurality of parallel connected resistance elements. The resistance value of the resistance adjusting unit can be changed by bringing one of the parallel connected resistance elements into a non-conduction state.
摘要翻译：在用于获得使用磁阻效应的可变电阻元件的输出与参考电阻元件之间的输出的磁性检测装置中，可以容易地在宽范围内调节器件中的电阻值之间的平衡。电压被施加到串联连接的电阻调节单元，参考电阻元件和可变电阻元件，并且也被施加到串联的另一个可变电阻元件，另一个参考电阻元件和另一个电阻调节单元连接的。当受到预定尺寸的磁场时，可变电阻元件的电阻值改变，结果导致输出端子的电位变化。每个电阻调节单元包括串联连接的并联部分，每个并联部分包括多个平行连接的电阻元件。可以通过使并联的电阻元件中的一个成为非导通状态来改变电阻调节单元的电阻值。

6. 发明授权

US07855556B2 Magnetic sensor and magnetic sensor module 有权
标题翻译：磁传感器和磁传感器模块
公开(公告)号：US07855556B2
公开(公告)日：2010-12-21
申请号：US12819870
申请日：2010-06-21
申请人： Hiromitsu Sasaki , Hideto Ando
发明人： Hiromitsu Sasaki , Hideto Ando
IPC分类号： G01R33/09 , H01L43/08
CPC分类号： G01R33/09 , B82Y25/00 , G01R33/0005 , G01R33/093 , H01L43/08
摘要： A magnetic sensor including a magnetoresistive effect element has the following structure. Element units each having an element width W1 and an element length L1 perpendicular to the element width W1 and producing a magnetoresistive effect in which electrical resistance changes in response to an external magnetic field are arranged in an element-length direction with a space therebetween. An intermediate permanent magnet layer is disposed in the space, and the element units are connected to each other with the intermediate permanent magnet layer therebetween to form a connected-element body. A plurality of the connected-element bodies are arranged so as to be adjacent to one another in an element-width direction with a space therebetween, the ends of the connected-element bodies are connected to each other with an outer permanent magnet layer therebetween to form a magnetoresistive effect element having a meandering shape.
摘要翻译：包括磁阻效应元件的磁传感器具有以下结构。每个具有元件宽度W1和垂直于元件宽度W1的元件长度L1并且产生其中电阻随着外部磁场变化的磁阻效应的元件单元在其间具有空间的元件长度方向排列。中间永磁体层设置在该空间中，并且元件单元彼此连接，中间永久磁铁层之间形成连接元件体。多个连接元件体在元件宽度方向上彼此相邻设置，并且在其之间具有间隙，连接元件体的端部之间以外部永磁体层彼此连接，形成具有曲折形状的磁阻效应元件。

7. 发明授权

US07592805B2 Magnetic detection device having bridge circuit provided with resistance adjustment portion and method of manufacturing the same 失效
标题翻译：具有电路调节部的桥接电路的磁检测装置及其制造方法
公开(公告)号：US07592805B2
公开(公告)日：2009-09-22
申请号：US11679015
申请日：2007-02-26
申请人： Hideto Ando , Hideki Gochou , Motoki Hirayama
发明人： Hideto Ando , Hideki Gochou , Motoki Hirayama
IPC分类号： G01R33/02
CPC分类号： G01D5/142
摘要： In a magnetic detection device using a magnetic resistance element, the resistance of a layer having a multi-layer structure can be easily adjusted without causing damages to the layer. A magneto-resistance layer is connected in series to a reference resistance layer, and a magneto-resistance layer is connected in series to a reference resistance layer on a substrate. A voltage is applied between a power supply layer and a grounding layer. A first output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. A second output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. Accordingly, it is possible to adjust the resistance of the reference resistance layers by selecting the respective positions of the connection layers.
摘要翻译：在使用磁阻元件的磁检测装置中，可以容易地调整具有多层结构的层的电阻而不会对该层造成损害。磁阻层与参考电阻层串联连接，并且磁阻层与衬底上的参考电阻层串联连接。在电源层和接地层之间施加电压。第一输出导电层和参考电阻层彼此并联延伸，使得它们经由连接层部分地彼此电连接。第二输出导电层和参考电阻层彼此并联延伸，使得它们经由连接层部分地彼此电连接。因此，可以通过选择连接层的各个位置来调整参考电阻层的电阻。

8. 发明申请

US20090147409A1 MAGNETORESISTIVE ELEMENT, MAGNETIC SENSOR, AND METHOD OF PRODUCING THE MAGNETORESISTIVE ELEMENT 审中-公开
标题翻译：磁电元件，磁传感器及其制造方法
公开(公告)号：US20090147409A1
公开(公告)日：2009-06-11
申请号：US12256189
申请日：2008-10-22
申请人： Shinji Sugihara , Hideto Ando , Shinichi Sasaki , Takuya Seino
发明人： Shinji Sugihara , Hideto Ando , Shinichi Sasaki , Takuya Seino
IPC分类号： G11B5/33
CPC分类号： H01F10/3268 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3929 , H01F41/306 , H01L27/22 , H01L43/08
摘要： The thickness of an antiferromagnetic layer (IrMn) and the thickness of a nonmagnetic interlayer (Cu) are adjusted so as to be within the area surrounded by boundaries a to f on the graph of FIG. 6 in which the horizontal axis represents the IrMn film thickness and the vertical axis represents the Cu film thickness. Consequently, the interlayer coupling magnetic field Hin can be made to be 10 Oe or more, and the variation in the interlayer coupling magnetic field Hin can be made to be 2 Oe or less. In addition, in the area surrounded by boundaries a to f, at any IrMn film thickness, the Cu film thickness range in which the variation can be made to be 2 Oe or less can be set over a wide range, as compared with a known structure.
摘要翻译：调整反铁磁性层（IrMn）的厚度和非磁性中间层（Cu）的厚度，使其在由图中的边界a至f包围的区域内。 6 ，其中横轴表示IrMn膜厚度，纵轴表示Cu膜厚度。因此，层间耦合磁场Hin可以为10Oe以上，层间耦合磁场Hin的变化可以为2Oe以下。此外，在边界a至f所包围的区域中，在任何IrMn膜厚度下，与已知的相比，可以在宽范围内将变化的Cu膜厚度范围设定为2Oe以下结构体。

9. 发明授权

US09530957B2 Magnetic sensor 有权
标题翻译：磁传感器
公开(公告)号：US09530957B2
公开(公告)日：2016-12-27
申请号：US13446264
申请日：2012-04-13
申请人： Shinji Sugihara , Fumihito Koike , Yasushi Watanabe , Hideto Ando
发明人： Shinji Sugihara , Fumihito Koike , Yasushi Watanabe , Hideto Ando
IPC分类号： G01R33/09 , H01L43/08 , B82Y25/00 , G01R33/02
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/0206 , G01R33/093
摘要： A magnetic sensor includes magnetoresistive elements and a soft magnetic body. The magnetoresistive elements have multi layers including a magnetic layer and a nonmagnetic layer on a substrate, and exert a magnetoresistance effect. The soft magnetic body is electrically disconnected with the magnetoresistive elements, and converts a vertical magnetic field component from the outside into a magnetic field component in a horizontal direction so as to provide the magnetoresistive elements with the horizontally converted magnetic field component. The magnetoresistive elements have a pinned magnetic layer having a fixed magnetization direction and a free magnetic layer having a variable magnetization direction. The free magnetic layer is stacked on the pinned magnetic layer with a nonmagnetic layer interposed between the free magnetic layer and the pinned magnetic layer. The magnetization directions of the pinned magnetic layers of the magnetoresistive elements are the same direction. The magnetoresistive elements form a bridge circuit.
摘要翻译：磁传感器包括磁阻元件和软磁体。磁阻元件具有在基板上包括磁性层和非磁性层的多层，并施加磁阻效应。软磁体与磁阻元件电气断开，并将来自外部的垂直磁场分量在水平方向上转换成磁场分量，从而为磁阻元件提供水平转换的磁场分量。磁阻元件具有固定磁化方向的固定磁性层和具有可变磁化方向的自由磁性层。自由磁性层被叠置在被钉扎的磁性层上，其中非磁性层介于自由磁性层和被钉扎的磁性层之间。磁阻元件的钉扎磁性层的磁化方向是相同的方向。磁阻元件形成桥接电路。

10. 发明授权

US07834619B2 Magnetic detection device 有权
标题翻译：磁检测装置
公开(公告)号：US07834619B2
公开(公告)日：2010-11-16
申请号：US12703401
申请日：2010-02-10
申请人： Hideto Ando , Shinji Sugihara
发明人： Hideto Ando , Shinji Sugihara
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , H01L43/08
摘要： A magnetic detection device includes a sensor unit including a sensor pattern having a plurality of magnetoresistance effect films whose ends in the length direction thereof are coupled via return portions, and electrode units formed at both ends of the sensor pattern in the longitudinal direction thereof. A non-magnetic conductor is electrically connected across a top surface of one of a pair of magnetoresistance effect films that are coupled via the corresponding one of the return portions and that face each other and a top surface of the other magnetoresistance effect film. Therefore, the resistance value between the electrode units can be adjusted without increasing the dimensions of the sensor unit, and deterioration or variation in magnetic characteristics can be reduced.
摘要翻译：磁检测装置包括传感器单元，该传感器单元包括具有多个磁阻效应膜的传感器图案，该多个磁阻效应膜的长度方向的端部通过返回部分耦合，以及形成在传感器图案的纵向两端的电极单元。非磁性导体跨越通过相应的一个返回部分并且彼此面对的另一个磁阻效应膜的顶表面耦合的一对磁阻效应膜之一的顶表面电连接。因此，可以在不增加传感器单元的尺寸的情况下调节电极单元之间的电阻值，并且可以降低磁特性的劣化或变化。

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