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1. 发明授权

US06440844B1 Semiconductor device with copper wiring and its manufacture method 失效
标题翻译：带铜线的半导体器件及其制造方法
公开(公告)号：US06440844B1
公开(公告)日：2002-08-27
申请号：US09111799
申请日：1998-07-08
申请人： Hideo Takagi , Kiyoshi Izumi , Wataru Futo , Satoshi Otsuka , Shigetaka Uji , Masataka Hoshino , Yukihiro Satoh , Koji Endo , Yuzuru Ohta , Nobuhiro Misawa
发明人： Hideo Takagi , Kiyoshi Izumi , Wataru Futo , Satoshi Otsuka , Shigetaka Uji , Masataka Hoshino , Yukihiro Satoh , Koji Endo , Yuzuru Ohta , Nobuhiro Misawa
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L21/76882 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The method of manufacturing a semiconductor device includes the steps of forming copper wiring; reducing an oxide film on the surface of the copper wiring by heating the copper wiring to a temperature in a range of 250° C.-450° C. under reductive gas or by treating the copper wiring in plasma of reductive gas; and then forming a film of a material not containing oxygen on the copper wiring without exposing the copper wiring to external atmosphere, and can provide a semiconductor device with good copper wiring.
摘要翻译：制造半导体器件的方法包括形成铜布线的步骤; 通过在还原性气体下将铜布线加热到250℃-450℃的温度，或者通过处理还原气体的等离子体中的铜布线来减少铜布线表面上的氧化膜; 然后在铜布线上形成不含氧的材料的膜，而不将铜布线暴露于外部大气，并且可以提供具有良好铜布线的半导体器件。

2. 发明授权

US6153522A Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US6153522A
公开(公告)日：2000-11-28
申请号：US179886
申请日：1998-10-28
申请人： Hideo Takagi , Shigetaka Uji , Shyoji Hirao
发明人： Hideo Takagi , Shigetaka Uji , Shyoji Hirao
IPC分类号： H01L21/28 , H01L21/285 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/52 , H05K3/06 , H01L21/44
CPC分类号： H01L21/7684 , H01L21/76882
摘要： A semiconductor device manufacturing method of the present invention comprises the steps of forming a groove on an insulating film formed over a semiconductor substrate, forming a first copper film on the insulating film and in the groove by sputtering using a target, reflowing the first copper film by heating it, growing a second copper film on the first copper film by plating or chemical vapor deposition, and removing the second copper film and the first copper film on the insulating film by chemical mechanical polishing to remain at least the first copper film in the groove. Accordingly, in the semiconductor device manufacturing method to provide copper wirings, increase in resistance can be suppressed by firmly embedding copper into the groove and also electromigration resistance of copper wirings can be improved.
摘要翻译：本发明的半导体器件制造方法包括以下步骤：在半导体衬底上形成绝缘膜上形成沟槽，在绝缘膜上形成第一铜膜，通过使用靶溅射形成沟槽，回流第一铜膜通过加热，通过电镀或化学气相沉积在第一铜膜上生长第二铜膜，并通过化学机械抛光去除绝缘膜上的第二铜膜和第一铜膜，以至少将第一铜膜保留在槽。因此，在提供铜布线的半导体器件制造方法中，通过将铜牢固地嵌入槽中可以抑制电阻的增加，并且还可以提高铜布线的电迁移阻力。

3. 发明授权

US06174796B1 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US06174796B1
公开(公告)日：2001-01-16
申请号：US09223280
申请日：1998-12-30
申请人： Hideo Takagi , Wataru Futo
发明人： Hideo Takagi , Wataru Futo
IPC分类号： H01L214763
CPC分类号： H01L21/76838 , H01L21/76804
摘要： A semiconductor device manufacturing method having a copper wiring, comprises the steps of forming a second insulating film for covering the wiring on a first insulating film, forming a third insulating film which is made of material different from the second insulating film on the second insulating film, coating a resist on the third insulating film and then forming an opening over the wiring by exposing and developing the resist, forming a hole or groove in the third insulating film by etching the third insulating film via the opening, removing the resist by placing the semiconductor substrate in a plasma atmosphere containing oxygen in a chamber and simultaneously removing a part of the second insulating film via the hole or groove to expose the wiring via the hole or groove, and forming a metal film in the hole or groove.
摘要翻译：具有铜布线的半导体器件制造方法包括以下步骤：在第一绝缘膜上形成用于覆盖布线的第二绝缘膜，在第二绝缘膜上形成由与第二绝缘膜不同的材料制成的第三绝缘膜在所述第三绝缘膜上涂覆抗蚀剂，然后通过曝光和显影所述抗蚀剂在所述布线上形成开口，通过经由所述开口蚀刻所述第三绝缘膜而在所述第三绝缘膜中形成孔或槽，通过将所述抗蚀剂放置在室内含有氧的等离子体气氛中的半导体衬底，同时通过孔或沟槽去除一部分第二绝缘膜，以经由孔或沟露出布线，并在孔或槽中形成金属膜。

4. 发明授权

US08083263B2 Tank-carrying vehicle rear body structure 有权
标题翻译：载车车身后部结构
公开(公告)号：US08083263B2
公开(公告)日：2011-12-27
申请号：US12473961
申请日：2009-05-28
申请人： Hiroyuki Yamanami , Hideo Takagi , Tsutomu Suzuki , Yusuke Furukawa
发明人： Hiroyuki Yamanami , Hideo Takagi , Tsutomu Suzuki , Yusuke Furukawa
IPC分类号： B62D21/15
CPC分类号： B62D21/152 , B60K15/07 , B60K2015/0638
摘要： A gas tank is protected by absorbing collision energy with the rear of a vehicle. Rear-side tank frame supports the tank at a position below a rear side member. The front portion of the tank frame is secured on rear side member, while the rear portion is directly or indirectly secured thereto. A torsion beam is arranged ahead of the tank frame. When an input load is exerted at rear end portions of the rear side member and tank frame toward the front of the vehicle, rear side member is folded to a V shape, upward with respect to the vehicle body. The tank frame collides with the torsion beam, and the front portion of the tank frame is pushed upward along with rear side member.
摘要翻译：通过与车辆的后部吸收碰撞能量来保护气罐。后侧油箱架将油箱支撑在后侧构件的下方。罐框架的前部固定在后侧部件上，而后部直接或间接固定在其上。扭力梁布置在油箱框架的前方。当后侧构件和油箱框架的后端部向车辆前方施加输入负荷时，后侧构件相对于车身向上折叠成V形。油箱架与扭力梁碰撞，油箱架的前部与后侧构件一起向上推。

5. 发明授权

US07840128B2 Image-blur compensating device and image pickup apparatus 有权
标题翻译：图像模糊补偿装置和图像拾取装置
公开(公告)号：US07840128B2
公开(公告)日：2010-11-23
申请号：US12141355
申请日：2008-06-18
申请人： Hideo Takagi , Tatsuyuki Takahashi , Toshifumi Takaoka , Tomoya Takei
发明人： Hideo Takagi , Tatsuyuki Takahashi , Toshifumi Takaoka , Tomoya Takei
IPC分类号： G03B17/00
CPC分类号： G03B17/00 , H04N5/23248 , H04N5/23258 , H04N5/23287
摘要： An image-blur compensating device includes an optical component configured to compensate blur in an image, an actuator driving the optical component, a displacement detector detecting a position of the optical component changed by the actuator, an angular velocity detector detecting an angular velocity applied from outside, and a target displacement calculator calculating a driving amount when the actuator has driven the optical axis changing unit based on the angular velocity detected by the angular velocity detector and the position detected by the displacement detector. The target displacement calculator then obtains, as a result of compensating an amount of influence on the position of the optical component, a driving amount when driving the actuator based on the calculated driving amount. The image-blur compensating device further includes a driver driving the actuator based on the driving amount calculated by the target displacement calculator.
摘要翻译：图像模糊补偿装置包括被配置为补偿图像中的模糊的光学部件，驱动光学部件的致动器，检测由致动器改变的光学部件的位置的位移检测器，检测从以及目标位移计算器，其计算当致动器基于由角速度检测器检测的角速度和由位移检测器检测的位置而驱动光轴改变单元时的驱动量。目标位移计算器，作为补偿对光学部件的位置的影响量的结果，获得基于计算出的驱动量来驱动致动器的驱动量。图像模糊补偿装置还包括基于由目标位移计算器计算的驾驶量来驱动致动器的驾驶员。

6. 发明申请

US20090309349A1 Tank-Carriyng Vehicle Rear Body Structure 有权
标题翻译： Tank-Carriyng车辆后车身结构
公开(公告)号：US20090309349A1
公开(公告)日：2009-12-17
申请号：US12473961
申请日：2009-05-28
申请人： Hiroyuki Yamanami , Hideo Takagi , Tsutomu Suzuki , Yusuke Furukawa
发明人： Hiroyuki Yamanami , Hideo Takagi , Tsutomu Suzuki , Yusuke Furukawa
IPC分类号： B62D21/15 , B60P3/22
CPC分类号： B62D21/152 , B60K15/07 , B60K2015/0638
摘要： A gas tank is protected by absorbing collision energy with the entirety of a rear portion of a vehicle without using a reinforcement member. This reduces weight and cost. Rear-side tank frame supports the tank at a position below rear side member. The front portion of rear-side tank frame is secured on rear side member, while the rear portion is directly or indirectly secured on rear side member. A torsion beam is arranged ahead of rear-side tank frame with respect to the vehicle body. When an input load is exerted at a rear end portion of the rear side member and a rear end portion of rear-side tank frame toward the front of the vehicle, rear side member is folded to a V-shape, upward with respect to the vehicle body. Rear-side tank frame collides with torsion beam, and the front portion of rear-side tank frame is pushed upward along with rear side member with respect to the vehicle body.
摘要翻译：在不使用加强构件的情况下，通过与车辆的后部的整体吸收碰撞能量来保护气罐。这减轻了重量和成本。后侧油箱架将油箱支撑在后侧构件的下方。后侧箱架的前部固定在后侧部件上，后部直接或间接地固定在后侧部件上。扭力梁相对于车身布置在后侧油箱框架的前方。当后侧构件的后端部和后侧箱架的后端部朝向车辆的前方施加输入负载时，后侧构件相对于前侧构件向上折叠成V字状车身。后侧油箱架与扭转梁碰撞，后侧油箱架的前部与后侧部件相对于车身向上推。

7. 发明申请

US20070187833A1 Method of fabricating semiconductor memory device and semiconductor memory device driver 失效
标题翻译：制造半导体存储器件和半导体存储器件驱动器的方法
公开(公告)号：US20070187833A1
公开(公告)日：2007-08-16
申请号：US11783468
申请日：2007-04-10
申请人： Tatsuya Hashimoto , Toshiyuki Maenosono , Taji Togawa , Takayuki Enda , Hideo Takagi
发明人： Tatsuya Hashimoto , Toshiyuki Maenosono , Taji Togawa , Takayuki Enda , Hideo Takagi
IPC分类号： H01L23/48
CPC分类号： H01L27/11526 , H01L21/02063 , H01L21/31133 , H01L21/31138 , H01L21/321 , H01L21/76801 , H01L21/76814 , H01L21/76834 , H01L24/02 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11531 , H01L2224/05599 , H01L2224/05624 , H01L2224/05669 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/1306 , H01L2924/13091 , H01L2924/30105 , H01L2924/00
摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
摘要翻译：公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连在电荷存储部分中。在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。

8. 发明申请

US20060228899A1 Semiconductor memory device and method for manufacturing semiconductor device 审中-公开
公开(公告)号：US20060228899A1
公开(公告)日：2006-10-12
申请号：US11441237
申请日：2006-05-26
申请人： Hiroyuki Nansei , Manabu Nakamura , Kentaro Sera , Masahiko Higashi , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
发明人： Hiroyuki Nansei , Manabu Nakamura , Kentaro Sera , Masahiko Higashi , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
IPC分类号： H01L21/31 , H01L21/336
CPC分类号： H01L21/0234 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02326 , H01L21/02332 , H01L21/3145 , H01L27/105 , H01L27/11526 , H01L27/11546 , H01L27/11568 , Y10S438/954
摘要： After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.

9. 发明授权

US07098147B2 Semiconductor memory device and method for manufacturing semiconductor device 失效
标题翻译：半导体存储器件及半导体器件的制造方法
公开(公告)号：US07098147B2
公开(公告)日：2006-08-29
申请号：US10643967
申请日：2003-08-20
申请人： Hiroyuki Nansei , Manabu Nakamura , Kentaro Sera , Masahiko Higashi , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
发明人： Hiroyuki Nansei , Manabu Nakamura , Kentaro Sera , Masahiko Higashi , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
IPC分类号： H01L21/31
CPC分类号： H01L27/11568 , H01L21/3145 , H01L27/105 , H01L27/11526 , H01L27/11546 , Y10S438/954
摘要： After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.
摘要翻译：在硅区域上形成下部氧化硅膜之后，通过例如热CVD法在下部氧化硅膜上形成硅膜。随后，通过等离子体氮化方法将硅膜完全氮化，由氮化硅膜代替。随后，通过等离子体氧化方法氧化氮化硅膜的表面层，以被上部氧化硅膜代替。形成作为由下部氧化硅膜，氮化硅膜和上部氧化硅膜构成的多层绝缘膜的ONO膜。

10. 发明授权

US06299239B1 Vehicle body structure 有权
标题翻译：车体结构
公开(公告)号：US06299239B1
公开(公告)日：2001-10-09
申请号：US09689770
申请日：2000-10-13
申请人： Kouichi Sagawa , Hideo Takagi
发明人： Kouichi Sagawa , Hideo Takagi
IPC分类号： B62D2702
CPC分类号： B62D21/157 , B60N2/4235 , B60N2/42709 , B62D25/025
摘要： A vehicle body structure is provided to ensure a sufficient space in a passenger's room of a vehicle and bear an impact load inputted to the vehicle's part higher than a floor tunnel. The vehicle body structure includes a center pillar 1, a front door, a rear door, a floor panel 4 arranged at the bottom of the passenger's room, a floor tunnel 5 formed to project upward at the center of the floor panel 4 of the vehicle's width direction and also extend in the fore-and-aft direction of the vehicle body, and a passenger's seat 7 arranged on the floor panel 4. The structure further includes a load-direction converting member 28 for transmitting the impact load toward the floor tunnel 5. The load-direction converting member 28 is formed with a lower frame 21a of a seat back frame 21 as the framework of the passenger's seat 7.
摘要翻译：提供车身结构以确保在车辆的乘客室中具有足够的空间并且承受输入到比地板隧道高的车辆部分的冲击载荷。车身结构包括中柱1，前门，后门，布置在乘客室底部的地板镶板4，形成为在车辆的底板4的中心向上突出的地板通道5。宽度方向并且还在车体的前后方向上延伸，以及布置在地板面板4上的乘客座椅7.该结构还包括负载方向转换构件28，用于将冲击载荷传递到地板隧道负载方向转换构件28形成有作为乘客座椅7的框架的座椅靠背框架21的下部框架21a。

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