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    • 8. 发明授权
    • Method of manufacturing a semiconductor device and substrate carrier structure
    • 制造半导体器件和衬底载体结构的方法
    • US08216919B2
    • 2012-07-10
    • US13009673
    • 2011-01-19
    • Yuichi Kaneko
    • Yuichi Kaneko
    • H01L21/263
    • H01L21/6835H01L2221/68313H01L2221/6835
    • A substrate carrier structure includes a tray and a secondary electron absorbing material. The tray holds a semiconductor substrate having a first surface on which semiconductor device elements are formed. The secondary electron absorbing material is interposed between the tray and this first surface of the semiconductor substrate. When the semiconductor substrate is irradiated with charged particles to form lattice defects, the secondary electron absorbing material prevents unwanted trapping of secondary electrons emitted from the tray, and thereby reduces the variability of electrical characteristics of semiconductor device elements formed on the semiconductor substrate.
    • 衬底载体结构包括托盘和二次电子吸收材料。 托盘保持具有形成半导体器件元件的第一表面的半导体衬底。 二次电子吸收材料介于托盘和半导体衬底的第一表面之间。 当半导体衬底被带电粒子照射以形成晶格缺陷时,二次电子吸收材料防止从托盘发射的二次电子的不期望的捕获,从而减少形成在半导体衬底上的半导体器件元件的电特性的变化。