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1. 发明授权

US06287067B1 Processing unit and processing unit structure by assembling thereof 失效
标题翻译：处理单元和处理单元结构包括组装在一起的多个处理单元
公开(公告)号：US06287067B1
公开(公告)日：2001-09-11
申请号：US08947543
申请日：1997-10-11
申请人： Hidenori Miyamoto , Susumu Okano , Koji Ueda , Taiichiro Aoki
发明人： Hidenori Miyamoto , Susumu Okano , Koji Ueda , Taiichiro Aoki
IPC分类号： B65H100
CPC分类号： H01L21/67161 , B23P21/004 , H01L21/67178 , H01L21/67184 , H01L21/67742 , Y10S414/135 , Y10S414/136
摘要： A processing unit structure 1 a plurality of processing units 2, . . . , assembled together continuously in a horizontal direction, wherein a transfer portion 3 is provided on the top of each processing unit 2, . . . , for transferring the plate-like material to be processed between adjacent one of the processing units. A transfer device, such as a shuttle (SH) is provided in each of the transfer portions 3. Each processing unit 2 performs a series of processes on the plate-like material and is constructed with processing blocks 4 and 4 and a transfer portion 3 in the form of a transfer robot (R) positioned between the processing blocks 4 and 4. Further, each processing unit 2. . . is independent from one another so that it is possible to selectively add and remove different ones of the processing units with respect to the processing unit structure 1.
摘要翻译：处理单元结构1是多个处理单元2，...。。。在水平方向上连续地组装在一起，其中传送部分3设置在每个处理单元2的顶部。。。用于在相邻的一个处理单元之间传送待处理的板状材料。在每个转印部分3中设置有诸如梭（SH）的转印装置。每个处理单元2对板状材料执行一系列处理，并且由处理块4和4以及转印部3 以位于处理块4和4之间的传送机器人（R）的形式。此外，每个处理单元2。。彼此独立，使得可以相对于处理单元结构1选择性地添加和去除处理单元中的不同处理单元。

2. 发明授权

US4977487A Face brightening device for use with vehicles 失效
标题翻译：用于车辆的面部增亮装置
公开(公告)号：US4977487A
公开(公告)日：1990-12-11
申请号：US254819
申请日：1988-10-07
申请人： Susumu Okano
发明人： Susumu Okano
IPC分类号： F21S8/10 , F21V8/00 , G09F9/305 , G09F13/04 , G09F13/22
CPC分类号： F21S48/2287 , B60Q1/50 , B60Q3/004 , B60Q3/044 , F21S48/2237 , F21S48/2268 , F21S48/2293 , G02B6/001 , G09F9/305 , G09F13/22 , G09F2013/0472 , Y10S362/812
摘要： A face brightening device for use with vehicles comprising optical fibers and a light source wherein the light source is attached to one or both ends of the optical fibers to brighten those notched faces of the optical fibers which form letters, patterns, brightening faces and the like needed inside and outside the vehicles. The face brightening device can be made smaller in size, simpler in construction, lighter in weight, more saving in space, and much more excellent in water-proofness, heat-resistance, weather- proofness and insulation.
摘要翻译：一种用于与包括光纤和光源的车辆一起使用的面部增亮装置，其中光源附接到光纤的一端或两端以使形成字母，图案，增亮面等的光纤的那些切口面变亮需要车内和车外。面部增白装置的尺寸更小，结构更简单，重量更轻，空间更节省，防水性，耐热性，耐候性和绝缘性更优异。

3. 发明授权

US5614271A Method for the formation of a silica-based coating film 失效
标题翻译：形成二氧化硅基涂膜的方法
公开(公告)号：US5614271A
公开(公告)日：1997-03-25
申请号：US692187
申请日：1996-08-05
申请人： Tatsuhiko Shibuya , Susumu Okano , Hideya Kobari , Yoshio Hagiwara , Toshimasa Nakayama
发明人： Tatsuhiko Shibuya , Susumu Okano , Hideya Kobari , Yoshio Hagiwara , Toshimasa Nakayama
IPC分类号： B05D3/06 , B05D7/00 , B05D7/24 , C04B41/50 , C09D183/00 , C09D183/16 , C23C18/12 , C23C18/14 , H01L21/316 , B29C71/02
CPC分类号： H01L21/316 , C04B41/5035 , C09D183/16 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C04B2111/00844
摘要： Proposed is an improved method for the formation of a silica-based coating film on the surface of a substrate such as a silicon wafer in the manufacture of semiconductor devices by coating the substrate surface with a polysilazane-containing coating solution followed by conversion of the coating layer of polysilazane into a silica-based coating film. The method comprises drying the coating layer of the polysilazane according to a heating schedule at a specified heating rate with continuous or stepwise increase of the temperature up to 240.degree. to 350.degree. C. followed by an irradiation treatment with far ultraviolet light at a temperature of 240.degree. to 350.degree. C. and then by a baking treatment at 350.degree. to 800.degree. C.
摘要翻译：提出了在半导体器件的制造中在硅晶片等基板的表面上形成二氧化硅类涂膜的改进方法，其中通过用含聚硅氮烷的涂布溶液涂布基板表面，随后将涂层转化聚硅氮烷层形成二氧化硅基涂膜。该方法包括以规定的加热速度按照加热方案干燥聚硅氮烷的涂层，连续或逐步升高温度至240℃至350℃，然后在远紫外光的温度下进行辐射处理 240℃至350℃，然后在350℃至800℃下进行烘烤处理。

4. 发明授权

US4321612A Schottky barrier contact to compound semiconductor with three layer refractory metalization and high phosphorous content glass passivation 失效
$Schottky barrier contact to compound semiconductor with three layer refractory metalization and high phosphorous content glass passivation$
标题翻译：肖特基势垒接触化合物半导体与三层难熔金属化和高磷含量玻璃钝化
公开(公告)号：US4321612A
公开(公告)日：1982-03-23
申请号：US109080
申请日：1980-01-02
申请人： Eiji Murata , Hideaki Izumi , Atuko Sugawara , Susumu Okano
发明人： Eiji Murata , Hideaki Izumi , Atuko Sugawara , Susumu Okano
IPC分类号： H01L21/316 , H01L29/47 , H01L29/872 , H01L29/48
CPC分类号： H01L21/316 , H01L29/475
摘要： A Schottky barrier type compound semiconductor device includes an N type compound semiconductor substrate, an insulation layer having a penetrating hole through which part of the substrate is exposed, and a layer of high melting metal formed through the penetrating hole to form a Schottky barrier with the substrate. The insulation layer includes a phosphosilicate glass layer containing phosphorus at a concentration of 1.times.10.sup.21 /cm.sup.3 or more and contacting the substrate.
摘要翻译：肖特基势垒型化合物半导体器件包括N型化合物半导体衬底，具有暴露基板的一部分的贯通孔的绝缘层和通过贯通孔形成的形成肖特基势垒的高熔点金属层，基质。绝缘层包括含有浓度为1×10 21 / cm 3以上的磷并与基板接触的磷硅酸盐玻璃层。

5. 发明授权

US4034394A Schottky semiconductor device 失效
标题翻译：肖特基半导体器件
公开(公告)号：US4034394A
公开(公告)日：1977-07-05
申请号：US676493
申请日：1976-04-13
申请人： Hisao Kamo , Masahiro Kuroda , Susumu Okano
发明人： Hisao Kamo , Masahiro Kuroda , Susumu Okano
IPC分类号： H01L29/93 , H01L21/285 , H01L29/47 , H01L29/864 , H01L29/872 , H01L29/48 , H01L23/48 , H01L29/06 , H01L29/161
CPC分类号： H01L29/475 , H01L21/28581 , H01L29/864 , H01L29/872
摘要： A Schottky semiconductor device includes a gallium arsenide substrate, a first metal layer formed of niobium, tantalum or vanadium to define a Schottky junction with the substrate, a second metal layer of platinum or palladium formed on the first metal layer and a third metal layer superposed on said second metal layer.
摘要翻译：肖特基半导体器件包括砷化镓衬底，由铌，钽或钒形成的第一金属层以限定与衬底的肖特基结，在第一金属层上形成的第二金属或铂金属层，第三金属层叠加在所述第二金属层上。

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