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1. 发明授权

US06433412B1 Semiconductor device and a method of manufacturing the same 有权
公开(公告)号：US06433412B1
公开(公告)日：2002-08-13
申请号：US09800589
申请日：2001-03-08
申请人： Hideko Ando , Hiroshi Kikuchi , Ikuo Yoshida , Toshihiko Sato , Tomo Shimizu
发明人： Hideko Ando , Hiroshi Kikuchi , Ikuo Yoshida , Toshihiko Sato , Tomo Shimizu
IPC分类号： H01L2302
摘要： A central portion of a main face of a package substrate 2 is mounted with a memory chip 1 using face down bonding by a flip chip bonding system. Further, a plurality of chip condensers 7 are mounted at vicinities of the memory chip 1. A clearance between a main face (lower face) of the memory chip 1 and a main face of the package substrate 2 is filled with underfill resin (seal resin) 10 constituting a seal member for achieving protection of connecting portions and for relaxation of thermal stress. An outer edge of the underfill resin 10 is extended to an outer side of the memory chip 1 and covers entire faces of the chip condensers 7 mounted at vicinities of the memory chip 1.

2. 发明授权

US6111322A Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US6111322A
公开(公告)日：2000-08-29
申请号：US858695
申请日：1997-05-19
申请人： Hideko Ando , Hiroshi Kikuchi , Toshihiko Sato , Tetsuya Hayashida
发明人： Hideko Ando , Hiroshi Kikuchi , Toshihiko Sato , Tetsuya Hayashida
IPC分类号： H01L21/56 , H01L21/60 , H01L23/12 , H01L23/36 , H01L23/373 , H01L23/433 , H05K3/30 , H05K3/34 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/32 , H01L21/563 , H01L23/3735 , H01L23/433 , H01L24/81 , H01L24/92 , H05K3/3436 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/81801 , H01L2224/92125 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15311 , H01L2924/15787 , H01L2924/16195 , H01L2924/351 , H05K2201/094 , H05K2201/09781 , H05K2201/2036 , H05K2203/047 , H05K3/303 , H05K3/3463 , Y02P70/613
摘要： An electrically reliable heat radiating package provided with a ball grid array (BGA) structure and a method of manufacturing the package are disclosed.A semiconductor chip is mounted on one surface of a ceramic wiring board via first solder bump electrodes and resin is filled in a gap area between the one surface of the wiring board and the principal surface of the semiconductor chip. A heat diffusing plate formed in a larger plane size than that of the semiconductor chip by aluminum nitride is arranged on the rear surface opposite to the principal surface of the semiconductor chip and soldered.Further, a radiating fin made of aluminum is provided on the heat diffusing plate and struck via silicone rubber in which a thermally conductive filler is includes.Further, the above first solder bump electrodes and second solder bump electrodes with a lower melting point than that of the solder used for the above soldering are formed on the rear surface of the above ceramic wiring board, and the above BGA package provided with a heat radiating structure is formed.This BGA package is mounted on a glass epoxy wiring board at low temperature.
摘要翻译：公开了一种具有球栅阵列（BGA）结构的电可靠性散热封装和制造封装的方法。半导体芯片通过第一焊料凸块电极安装在陶瓷布线板的一个表面上，并且树脂填充在布线板的一个表面和半导体芯片的主表面之间的间隙区域中。在与半导体芯片的主表面相对的后表面上布置有由氮化铝形成的具有比半导体芯片大的平面尺寸的热扩散板，并且被焊接。此外，在散热板上设置由铝制成的散热片，并通过其中包含导热填料的硅橡胶进行打击。此外，在上述陶瓷布线板的后表面上形成上述第一焊锡凸块电极和具有比用于上述焊接的焊料熔点低的熔点的第二焊料凸块电极，并且上述具有热量的BGA封装形成辐射结构。该BGA封装在低温下安装在玻璃环氧树脂布线板上。

3. 发明授权

US06380621B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06380621B1
公开(公告)日：2002-04-30
申请号：US09543769
申请日：2000-04-05
申请人： Hideko Ando , Hiroshi Kikuchi , Toshihiko Sato , Tetsuya Hayashida
发明人： Hideko Ando , Hiroshi Kikuchi , Toshihiko Sato , Tetsuya Hayashida
IPC分类号： H01L2310
CPC分类号： H01L24/32 , H01L21/563 , H01L23/3735 , H01L23/433 , H01L24/81 , H01L24/92 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/81801 , H01L2224/92125 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15311 , H01L2924/15787 , H01L2924/16195 , H01L2924/351 , H05K3/303 , H05K3/3436 , H05K3/3463 , H05K2201/094 , H05K2201/09781 , H05K2201/2036 , H05K2203/047 , Y02P70/613 , H01L2924/00
摘要： An electrically reliable heat radiating package provided with ball grid array (BGA) structure and a method of manufacturing the package are disclosed. In the concrete, a semiconductor chip is mounted on one surface of a ceramic wiring board via a first soldered bump electrode and resin is filled in a gap area between the one surface of the wiring board and the principal surface of the semiconductor chip. A heat diffusing plate formed in larger plane size than that of the semiconductor chip by aluminum nitride is arranged on the rear surface opposite to the principal surface of the semiconductor chip and soldered. Further, a radiating fin made of aluminum is provided on the heat diffusing plate and stuck via silicone rubber in which thermally conductive filler is included. Further, the above first soldered bump electrode and a second soldered bump electrode with a lower melting point than that of solder used for the above soldering are formed on the rear surface of the above ceramic wiring board and the above BGA package provided with heat radiating structure is formed. This BGA package is mounted on a glass epoxy wiring board at low temperature.
摘要翻译：公开了一种具有球栅阵列（BGA）结构的电可靠性散热封装和制造该封装的方法。具体而言，通过第一焊接突起电极和树脂将半导体芯片安装在陶瓷布线板的一个表面上填充在布线板的一个表面和半导体芯片的主表面之间的间隙区域中。在与半导体芯片的主表面相对的后表面上布置有由氮化铝形成的具有比半导体芯片更大的平面尺寸的热扩散板并焊接。此外，在散热片上设置由铝制成的散热片并通过其中包含导热填料的硅橡胶粘贴。此外，上述第一焊接凸块电极和熔点低于用于上述焊接的焊料熔点低的第二焊接凸块电极形成在形成陶瓷布线板以上的上述BGA封装，并具有散热结构。该BGA封装在低温下安装在玻璃环氧树脂布线板上。

4. 发明授权

US06911734B2 Semiconductor device and electronic device 失效
公开(公告)号：US06911734B2
公开(公告)日：2005-06-28
申请号：US10391746
申请日：2003-03-20
申请人： Hiroshi Kikuchi , Norio Nakazato , Hideko Ando , Takashi Suga , Satoru Isomura , Takashi Kubo , Hiroyasu Sasaki , Masanori Fukuhara , Naotaka Tanaka , Fujiaki Nose
发明人： Hiroshi Kikuchi , Norio Nakazato , Hideko Ando , Takashi Suga , Satoru Isomura , Takashi Kubo , Hiroyasu Sasaki , Masanori Fukuhara , Naotaka Tanaka , Fujiaki Nose
IPC分类号： H01L23/66 , H05K1/02 , H05K3/36 , H01L23/34
CPC分类号： H05K1/0243 , H01L23/66 , H01L2223/6616 , H01L2223/6627 , H01L2224/16 , H01L2224/16225 , H01L2224/32188 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2924/01079 , H01L2924/09701 , H01L2924/15173 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/16152 , H01L2924/1903 , H01L2924/19106 , H01L2924/3011 , H01L2924/3025 , H05K1/0219 , H05K3/361 , H05K2201/10522 , H05K2201/1053 , H05K2201/10659 , H05K2201/10681 , H05K2201/10734 , H01L2924/00014 , H01L2924/00
摘要： A high-frequency signal from a tape-shaped line section having a surface layer signal lead and surface layer GND lead disposed on both sides thereof is directly inputted to a semiconductor chip via a signal surface layer wiring of a package substrate and through solder bump electrodes. Alternatively, a high-frequency signal from the semiconductor chip is outputted to the outside via the tape-shaped line section in reverse. Owing to the transmission of the high-frequency signal by only a microstrip line at the whole surface layer of the package substrate, the high-frequency signal can be transmitted by only the microstrip line at the surface layer without through vias or the like. Accordingly, the high-frequency signal can be transmitted without a loss in frequency characteristic, and a high-quality high-frequency signal can be transmitted with a reduction in loss at high-frequency transmission.

5. 发明授权

US06911733B2 Semiconductor device and electronic device 失效
标题翻译：半导体器件和电子器件
公开(公告)号：US06911733B2
公开(公告)日：2005-06-28
申请号：US10372898
申请日：2003-02-26
申请人： Hiroshi Kikuchi , Norio Nakazato , Hideko Ando , Takashi Suga , Satoru Isomura , Takashi Kubo , Hiroyasu Sasaki , Masanori Fukuhara , Naotaka Tanaka , Fujiaki Nose
发明人： Hiroshi Kikuchi , Norio Nakazato , Hideko Ando , Takashi Suga , Satoru Isomura , Takashi Kubo , Hiroyasu Sasaki , Masanori Fukuhara , Naotaka Tanaka , Fujiaki Nose
IPC分类号： H01L23/66 , H05K1/02 , H05K3/36 , H01L23/34
CPC分类号： H05K1/0243 , H01L23/66 , H01L2223/6616 , H01L2223/6627 , H01L2224/16 , H01L2224/16225 , H01L2224/32188 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2924/01079 , H01L2924/09701 , H01L2924/15173 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/16152 , H01L2924/1903 , H01L2924/19106 , H01L2924/3011 , H01L2924/3025 , H05K1/0219 , H05K3/361 , H05K2201/10522 , H05K2201/1053 , H05K2201/10659 , H05K2201/10681 , H05K2201/10734 , H01L2924/00014 , H01L2924/00
摘要： A high-frequency signal from a tape-shaped line section having a surface layer signal lead and surface layer GND lead disposed on both sides thereof is directly inputted to a semiconductor chip via a signal surface layer wiring of a package substrate and through solder bump electrodes. Alternatively, a high-frequency signal from the semiconductor chip is outputted to the outside via the tape-shaped line section in reverse. Owing to the transmission of the high-frequency signal by only a microstrip line at the whole surface layer of the package substrate, the high-frequency signal can be transmitted by only the microstrip line at the surface layer without through vias or the like. Accordingly, the high-frequency signal can be transmitted without a loss in frequency characteristic, and a high-quality high-frequency signal can be transmitted with a reduction in loss at high-frequency transmission.
摘要翻译：来自具有布置在其两侧的表面层信号引线和表面层GND引线的带状线段的高频信号经由封装衬底的信号表面层布线直接输入到半导体芯片，并通过焊料凸块电极。或者，来自半导体芯片的高频信号经由带状线路部分反向输出到外部。由于仅在封装衬底的整个表面层处的微带线传输高频信号，所以高频信号可以仅通过表层的微带线传输，而不需要通过通孔等。因此，可以不损失频率特性来发送高频信号，并且可以在高频率传输时以低损耗的方式发送高质量的高频信号。

6. 发明授权

US06714383B2 Magnetic disk apparatus 失效
标题翻译：磁盘装置
公开(公告)号：US06714383B2
公开(公告)日：2004-03-30
申请号：US09740957
申请日：2000-12-21
申请人： Yoshiyuki Kado , Hiroshi Kikuchi , Ikuo Yoshida
发明人： Yoshiyuki Kado , Hiroshi Kikuchi , Ikuo Yoshida
IPC分类号： G11B560
CPC分类号： G11B5/4846 , G11B5/4853 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/73204 , H01L2924/00014 , H01L2924/00 , H01L2224/05599
摘要： A technique to be applied to improve the reliability of a magnetic disk apparatus is disclosed. In detail, a magnetic disk apparatus comprises a disk-shaped magnetic recording medium that rotates in operation, a magnetic head for writing the data in the magnetic recording medium and for reading out the data written in the magnetic recording medium, a carriage mechanism having an arm on which the magnetic head is located and moving the magnetic head to an arbitrary position on the magnetic recording medium, a wiring member having wiring, a semiconductor chip having a first main surface and a second main surface that are opposed to each other and electrodes formed on the first main surface, the semiconductor chip being fixed to the wiring member in the state that the electrodes are facing to the wiring of the wiring member, and a housing that contains the magnetic recording medium, the magnetic head, the carriage mechanism, the wiring member, and the semiconductor chip, wherein the edge of the first main surface side of the semiconductor chip and the edge of the second main surface side are covered with insulative resin.
摘要翻译：公开了一种应用于提高磁盘装置的可靠性的技术。详细地说，一种磁盘装置包括一个在工作中旋转的盘形磁记录介质，一个磁头，用于将数据写入磁记录介质中，并读出写在磁记录介质中的数据;一个滑架机构，磁头位于其上并将磁头移动到磁记录介质上的任意位置，具有布线的布线构件，具有彼此相对的第一主表面和第二主表面的半导体芯片和电极形成在所述第一主表面上，所述半导体芯片在所述电极面对所述布线构件的布线的状态下固定到所述布线构件;以及壳体，其容纳所述磁记录介质，所述磁头，所述滑架机构，布线部件和半导体芯片，其中半导体芯片的第一主表面侧的边缘和第二主表面的边缘侧面用绝缘树脂覆盖。

7. 发明授权

US06528343B1 Semiconductor device its manufacturing method and electronic device 失效
标题翻译：半导体器件的制造方法和电子器件
公开(公告)号：US06528343B1
公开(公告)日：2003-03-04
申请号：US09646711
申请日：2000-11-29
申请人： Hiroshi Kikuchi , Yoshiyuki Kado , Ikuo Yoshida
发明人： Hiroshi Kikuchi , Yoshiyuki Kado , Ikuo Yoshida
IPC分类号： H01L2144
CPC分类号： H01L24/94 , H01L23/3114 , H01L24/02 , H01L24/11 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/0401 , H01L2224/05599 , H01L2224/13099 , H01L2224/16 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29355 , H01L2224/29499 , H01L2224/32225 , H01L2224/48247 , H01L2224/8319 , H01L2224/838 , H01L2224/85399 , H01L2924/00014 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01058 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/05042 , H01L2924/0665 , H01L2924/0781 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/181 , H05K3/323 , H05K2201/023 , H05K2201/091 , H05K2201/10719 , H01L2924/00 , H01L2924/3512 , H01L2224/13111 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： Disclosed herein is a semiconductor device, which comprises a semiconductor chip including, over one main surface thereof, first wirings, protective films formed so as to cover other portions excluding parts of the first wirings, flexible layers respectively formed on the protective films so as to exclude the parts of the first wirings, and second wirings having first portions respectively electrically connected to the parts of the first wirings, and second portions respectively drawn onto the flexible layers; a wiring board having third wirings over one main surface thereof; and an adhesive comprising a large number of conductive particles contained in an insulative resin, and wherein the semiconductor chip is bonded to the wiring board with the adhesive interposed therebetween in a state in which the one main surface thereof is face to face with the one main surface of the wiring board, and the second portions of the second wirings are respectively electrically connected to the third wirings with some of the large number of conductive particles interposed therebetween.
摘要翻译：这里公开了一种半导体器件，其包括在其一个主表面上包括第一布线的半导体芯片，形成为覆盖除了第一布线的部分以外的其它部分的保护膜，分别形成在保护膜上的柔性层，以便排除第一布线的部分，第二布线具有分别电连接到第一布线的部分的第一部分和分别拉到柔性层上的第二部分; 布线板，其一个主表面上具有第三布线; 以及包含绝缘树脂中所含的大量导电性粒子的粘合剂，其中，所述半导体芯片在其一个主面与所述一个主体面对的状态下与所述配线基板接合，布线板的表面和第二布线的第二部分分别电连接到第三布线，其中一些导电颗粒被插入其间。

8. 发明授权

US06787395B2 Method of manufacturing a multi-chip module 有权
标题翻译：制造多芯片模块的方法
公开(公告)号：US06787395B2
公开(公告)日：2004-09-07
申请号：US10269972
申请日：2002-10-15
申请人： Yoshiyuki Kado , Tsukio Funaki , Hiroshi Kikuchi , Ikuo Yoshida
发明人： Yoshiyuki Kado , Tsukio Funaki , Hiroshi Kikuchi , Ikuo Yoshida
IPC分类号： H01L2144
CPC分类号： H01L24/81 , H01L23/49838 , H01L23/528 , H01L2224/1134 , H01L2224/13144 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/73204 , H01L2224/81801 , H01L2224/83192 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/351 , H01L2924/00
摘要： Silicon chip having narrow pitches of Au bumps are mounted on a module substrate in such a way that while taking into consideration a difference in coefficient of thermal expansion between the silicon chip and the module substrate, a total pitch of electrode pads of the silicon chip is made narrower than a total pitch of the Au bumps, thereby preventing misregistration between the Au bumps and the electrode pads in the course of heat treatment to ensure reliable contact therebetween.
摘要翻译：具有较小间距的Au凸块的硅芯片以这样的方式安装在模块基板上，同时考虑到硅芯片和模块基板之间的热膨胀系数的差异，硅芯片的电极焊盘的总间距为比Au凸块的总间距窄，从而防止在热处理过程中Au凸块和电极焊盘之间的不对准，以确保其间的可靠接触。

9. 发明授权

US06489181B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06489181B2
公开(公告)日：2002-12-03
申请号：US09897408
申请日：2001-07-03
申请人： Yoshiyuki Kado , Tsukio Funaki , Hiroshi Kikuchi , Ikuo Yoshida
发明人： Yoshiyuki Kado , Tsukio Funaki , Hiroshi Kikuchi , Ikuo Yoshida
IPC分类号： H01L2148
CPC分类号： H01L24/81 , H01L23/49838 , H01L23/528 , H01L2224/1134 , H01L2224/13144 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/73204 , H01L2224/81801 , H01L2224/83192 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/351 , H01L2924/00
摘要： Silicon chip having narrow pitches of Au bumps are mounted on a module substrate in such a way that while taking into consideration a difference in coefficient of thermal expansion between the silicon chip and the module substrate, a total pitch of electrode pads of the silicon chip is made narrower than a total pitch of the Au bumps, thereby preventing misregistration between the Au bumps and the electrode pads in the course of heat treatment to ensure reliable contact therebetween.
摘要翻译：具有较小间距的Au凸块的硅芯片以这样的方式安装在模块基板上，同时考虑到硅芯片和模块基板之间的热膨胀系数的差异，硅芯片的电极焊盘的总间距为比Au凸块的总间距窄，从而防止在热处理过程中Au凸块和电极焊盘之间的不对准，以确保其间的可靠接触。

10. 发明申请

US20200233365A1 CLEANING DEVICE, PROCESS CARTRIDGE, AND IMAGE FORMING APPARATUS 审中-公开
公开(公告)号：US20200233365A1
公开(公告)日：2020-07-23
申请号：US16735296
申请日：2020-01-06
申请人： Hideki Kimura , Akira Fujimori , Hiroshi Kikuchi , Yutaka Takahashi , Hiroyuki Uenishi , Yusuke Ishizuka , Johji Yahagi
发明人： Hideki Kimura , Akira Fujimori , Hiroshi Kikuchi , Yutaka Takahashi , Hiroyuki Uenishi , Yusuke Ishizuka , Johji Yahagi
IPC分类号： G03G21/00
摘要： A cleaning device includes a brush roller configured to contact an image bearer while rotating to remove toner adhering to an image bearer, a bias applying device configured to apply a bias to the brush roller, and control circuitry configured to causes the bias applying device to apply a first bias in a first period from when the brush roller is new to when a cumulative travel distance or a cumulative rotation time of the brush roller reaches a predetermined value, and to apply a second bias in a second period after the first period. The first bias sends a first current through the brush roller, and the second bias sends a second current through the brush roller. The absolute value of the first current is smaller than the absolute value of the second current.

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