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    • 7. 发明授权
    • Preparation of aluminum hydrate
    • 铝水合物的制备
    • US3954958A
    • 1976-05-04
    • US529937
    • 1974-12-05
    • Atsuro MatsuiHidekimi KadokuraTadaaki YakoHiroshi UmezakiKazuo Iida
    • Atsuro MatsuiHidekimi KadokuraTadaaki YakoHiroshi UmezakiKazuo Iida
    • B01J21/04C01F7/36C01F7/02
    • C01F7/36
    • Powdery alumina hydrate is produced from an alkylaluminum compound by hydrolysis of the alkylaluminum compound by water through the following steps; converting the alkylaluminum compound to an ether complex compound: partially hydrolyzing the ether complex compound in the presence of an non-reactive solvent at a temperature of not higher than about 150.degree.C with stirring so that no alumina hydrate is precipitated until at least 0.8 moles of water reacts with one mole of the alkylaluminum compound, thereby forming polyaluminoxane; completely hydrolyzing the resulting polyaluminoxane at a concentration of not more than about 3.0 grams-atoms as aluminum per liter of non-reactive solvent at a temperature of about 10.degree. to about 150.degree.C with stirring, so that one mole of the feed alkylaluminum compound may be ultimately hydrolyzed completely with 2 to 10 moles of water, thereby precipitating alumina hydrate; and then separating the resulting alumina hydrate from the non-reactive solvent. The alumina hydrate has a good forming ability and also an ability to provide formed shapes having a good mechanical strength.
    • 粉状氧化铝水合物由烷基铝化合物通过以下步骤水解烷基铝化合物; 将烷基铝化合物转化为醚络合物:在非反应性溶剂的存在下,在不高于约150℃的温度搅拌下部分水解醚络合物,使得没有氧化铝水合物沉淀直到至少0.8摩尔 的水与1摩尔的烷基铝化合物反应,从而形成聚铝氧烷; 在约10℃至约150℃的温度下,在搅拌下,将不超过约3.0克原子浓度的所得聚铝氧烷完全水解,每升非反应性溶剂为铝,使得1摩尔的进料烷基铝化合物 最终可以用2-10摩尔水完全水解,从而沉淀出水合氧化铝; 然后将所得的氧化铝水合物与非反应性溶剂分离。 氧化铝水合物具有良好的成形能力,并且还具有提供具有良好机械强度的成形形状的能力。
    • 8. 发明授权
    • Non-volatile memory device
    • 非易失性存储器件
    • US07511981B2
    • 2009-03-31
    • US11876607
    • 2007-10-22
    • Hideo AsanoKoji KitamuraHisatada MiyatakeKohki NodaToshio SunagaHiroshi Umezaki
    • Hideo AsanoKoji KitamuraHisatada MiyatakeKohki NodaToshio SunagaHiroshi Umezaki
    • G11C5/08
    • G11C11/16
    • A non-volatile memory device according to one embodiment comprises a plurality of memory cells each comprising a magneto resistive element and a selection transistor; wherein at least some of the memory cells are arranged into a two dimensional array; a first interconnect line extending in a first direction of the memory array and functioning as a gate electrode of a selection transistor included in each memory cell; a second interconnect line extending in the first direction of the memory array; a third interconnect line extending in a second direction; wherein the magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines, wherein the second interconnect line extends at least partially along all magneto resistive elements in a particular one of the memory cells.
    • 根据一个实施例的非易失性存储器件包括多个存储单元,每个存储单元包括磁阻元件和选择晶体管; 其中所述存储器单元中的至少一些被布置成二维阵列; 第一互连线,沿着所述存储器阵列的第一方向延伸并且用作包含在每个存储单元中的选择晶体管的栅电极; 在存储器阵列的第一方向上延伸的第二互连线; 第三互连线,沿第二方向延伸; 其中所述存储器单元中的至少一些的所述磁阻元件夹在所述第二和第三互连线之间,其中所述第二互连线至少部分地沿着所述存储器单元中的特定一个的所有磁阻元件延伸。
    • 10. 发明授权
    • Magnetic memory and method for optimizing write current in a magnetic memory
    • 磁存储器和用于优化磁存储器中的写入电流的方法
    • US06992924B2
    • 2006-01-31
    • US10680051
    • 2003-10-07
    • Hisatada MiyatakeHiroshi UmezakiKohji KitamuraToshio SunagaKohki NodaHideo Asano
    • Hisatada MiyatakeHiroshi UmezakiKohji KitamuraToshio SunagaKohki NodaHideo Asano
    • G11C11/15
    • G11C11/16G11C29/02G11C29/028G11C2029/5006
    • The invention provides methods and apparatus for for determining and providing optimum write bit line current and write word line current in an MRAM. A single reference potential is used to determine the values of the write line current and the bit line current. In determining the optimal values, asteroid curves representing bit line magnetic fields Hx generated by write bit line current IB and word line magnetic fields Hy generated by write word line current Iw for magnetization are considered, and an asteroid curve ACout is defined outside the asteroid curves of all memory cells taking manufacture variations and design margins into account. A write bit line current and a write word line current are selected such that the write current obtained by adding the write bit line current or currents and the write word line current, or the write power consumed by the bit line or lines and the write word line is minimized. Furthermore, in order to prevent multi-selection, the write bit line current and the write word line current are selected so that they generate a synthetic magnetic field on the curve between calculated points of the asteroid curve ACout.
    • 本发明提供了用于在MRAM中确定和提供最佳写入位线电流和写入字线电流的方法和装置。 单个参考电位用于确定写入线电流和位线电流的值。 在确定最佳值时,表示通过写入位线电流I B和字线磁场H SUB生成的位线磁场H 的小行星曲线 考虑了用于磁化的写入字线电流I 产生的小行星曲线AC< SUB>被定义在所有存储器单元的小行星曲线之外,其采取制造变化和设计余量 考虑到 选择写位线电流和写字线电流,使得通过将写位线电流或电流和写字线电流相加而获得的写入电流或由位线或线消耗的写入功率和写入字 线最小化。 此外,为了防止多次选择,选择写入位线电流和写入字线电流,使得它们在小行星曲线AC的计算点之间的曲线上产生合成磁场, 。