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1. 发明授权

US06191289B1 Production process and intermediate of tetrazole compound 失效
标题翻译：四唑化合物的生产工艺和中间体
公开(公告)号：US06191289B1
公开(公告)日：2001-02-20
申请号：US09176198
申请日：1998-10-21
申请人： Hideki Ushio , Takayuki Higashii , Masayoshi Minai , Akihiko Nakamura
发明人： Hideki Ushio , Takayuki Higashii , Masayoshi Minai , Akihiko Nakamura
IPC分类号： C07D25704
CPC分类号： C07D257/04 , C07C251/86 , C07C257/18 , C07C257/22 , C07D405/04
摘要： There are disclosed an industrially favorable process for producing a tetrazole compound of general formula (1): characterized in that a nitrile of general formula (2): R1CN (2) is reacted with hydrazine or a salt thereof in the presence of a catalyst, followed by reaction with a nitrous acid compound of general formula (3): ANO2 (3) or a nitrile of general formula (2) is reacted with hydrogen sulfide, followed by reaction with an alkyl halide of general formula (4): R4J (4) with hydrazine or a salt thereof, and then with a nitrous acid compound of general formula (3); and an intermediate of general formula (5): R1C(═R5)R6 (5) which is useful for the production of the tetrazole compound (in which R1 to R6, A and J in the above formulas are as defined in the specification).
摘要翻译：公开了用于制备通式（1）的四唑化合物的工业上有利的方法：其特征在于通式（2）的腈与肼或其盐在催化剂存在下反应，然后与将通式（3）的亚硝酸化合物或通式（2）的腈与硫化氢反应，然后与通式（4）的烷基卤反应：与肼或其盐反应，然后与通式（3）的亚硝酸化合物; 和通式（5）的中间体：其可用于制备四唑化合物（其中上述式中的R 1至R 6，A和J如说明书中所定义）。

2. 发明授权

US5874593A Production process and intermediate of tetrazole compound 失效
标题翻译：四唑化合物的生产工艺和中间体
公开(公告)号：US5874593A
公开(公告)日：1999-02-23
申请号：US592375
申请日：1996-02-08
申请人： Hideki Ushio , Takayuki Higashii , Masayoshi Minai , Akihiko Nakamura
发明人： Hideki Ushio , Takayuki Higashii , Masayoshi Minai , Akihiko Nakamura
IPC分类号： C07C251/86 , C07C257/18 , C07C257/22 , C07D257/04 , C07D405/04
CPC分类号： C07D257/04 , C07C251/86 , C07C257/18 , C07C257/22 , C07D405/04
摘要： There are disclosed an industrially favorable process for producing a tetrazole compound of general formula (1): ##STR1## characterized in that a nitrile of general formula (2):R.sup.1 CN (2)is reacted with hydrazine or a salt thereof in the presence of a catalyst, followed by reaction with a nitrous acid compound of general formula (3):ANO.sub.2 (3)or a nitrile of general formula (2) is reacted with hydrogen sulfide, followed by reaction with an alkyl halide of general formula (4):R.sup.4 J (4)with hydrazine or a salt thereof, and then with a nitrous acid compound of general formula (3); and an intermediate of general formula (5):R.sup.1 C(=R.sup.5)R.sup.6 (5)which is useful for the production of the tetrazole compound (in which R.sup.1 to R.sup.6, A and J in the above formulas are as defined in the specification).
摘要翻译： PCT No.PCT / JP95 / 00919 Sec。 371日期1996年2月8日 102（e）日期1996年2月8日PCT提交1995年5月15日PCT公布。出版物WO95 / 31445 日本公开了1995年11月23日的通式（1）的四唑化合物的工业上有利的方法：其中通式（2）的腈：R1CN（2）与肼或其盐在催化剂存在下反应，随后与通式（3）的亚硝酸化合物：ANO2（3）或通式（2）的腈反应与硫化氢反应，随后与通式（4）的烷基卤化物：R4J（4）与肼或其盐，然后与通式（3）的亚硝酸化合物反应; 和通式（5）的中间体：可用于制备四唑化合物的R1C（= R5）R6（5）（上述式中的R1至R6，A和J如说明书中所定义）。

3. 发明授权

US06277998B1 Production process and intermediate of tetrazole compound 失效
公开(公告)号：US06277998B1
公开(公告)日：2001-08-21
申请号：US09662591
申请日：2000-09-14
申请人： Hideki Ushio , Takayuki Higashii , Masayoshi Minai , Akihiko Nakamura
发明人： Hideki Ushio , Takayuki Higashii , Masayoshi Minai , Akihiko Nakamura
IPC分类号： C07D40504
CPC分类号： C07D257/04 , C07C251/86 , C07C257/18 , C07C257/22 , C07D405/04
摘要： There are disclosed an industrially favorable process for producing a tetrazole compound of general formula (1): characterized in that a nitrile of general formula (2): R1CN (2) is reacted with hydrazine or a salt thereof in the presence of a catalyst, followed by reaction with a nitrous acid compound of general formula (3): ANO2 (3) or a nitrile of general formula (2) is reacted with hydrogen sulfide, followed by reaction with an alkyl halide of general formula (4): R4J (4) with hydrazine or a salt thereof, and then with a nitrous acid compound of general formula (3); and an intermediate of general formula (5): R1C(═R5)R6 (5) which is useful for the production of the tetrazole compound (in which R1 to R6, A and J in the above formulas are as defined in the specification).

4. 发明授权

US06348617B1 Method for purifying pyruvic acid compounds 失效
标题翻译：丙酮酸化合物的纯化方法
公开(公告)号：US06348617B1
公开(公告)日：2002-02-19
申请号：US09284263
申请日：1999-06-21
申请人： Hideki Ushio , Motoo Hazama , Toshikazu Yagi , Akihiko Nakamura , Masahiko Mizuno
发明人： Hideki Ushio , Motoo Hazama , Toshikazu Yagi , Akihiko Nakamura , Masahiko Mizuno
IPC分类号： C09C6966
CPC分类号： C07C67/343 , C07C67/60 , C07C69/716
摘要： The present invention is directed to a method for purifying pyruvic acid compounds, which method comprises reacting a pyruvic acid compound of general formula (I): wherein R1 is an optionally substituted lower alkyl group, a lower alkenyl group, a lower alkynyl group, a cycloalkyl group, an aryl group, or a heterocyclic group, and R2 is a lower alkyl group, with a bisulfite of general formula (II): MHSO3 (II) wherein M is NH4 or an alkali metal, to give a bisulfite adduct of the pyruvic acid compound and then decomposing the adduct with an acid. According to the present invention, pyruvic acid compounds can be purified by simple and easy procedures without using purification techniques such as distillation or column chromatography, and the above method is advantageous as a process for the production on an industrial scale.
摘要翻译：本发明涉及一种纯化丙酮酸化合物的方法，该方法包括使通式（I）的丙酮酸化合物：其中R 1为任选取代的低级烷基，低级烯基，低级炔基，环烷基，芳基或杂环基，R2是低级烷基，与通式（II）的亚硫酸氢盐反应：其中M是NH 4或碱金属，得到丙酮酸化合物的亚硫酸氢盐加合物和然后用酸分解加合物。根据本发明，丙酮酸化合物可以通过简单且简单的方法纯化，而不使用蒸馏或柱色谱法等纯化技术，上述方法作为工业规模生产的方法是有利的。

5. 发明授权

US09129999B2 Treatment device, treatment method, and surface treatment jig 有权
标题翻译：处理装置，处理方法和表面处理夹具
公开(公告)号：US09129999B2
公开(公告)日：2015-09-08
申请号：US12514193
申请日：2007-10-12
申请人： Yasumasa Iwata , Akihiko Nakamura
发明人： Yasumasa Iwata , Akihiko Nakamura
IPC分类号： B08B3/04 , H01L21/67 , H01L21/02
CPC分类号： H01L21/6708 , H01L21/02057
摘要： The treatment device 100 of the present invention is a treatment device for carrying out treatment to a treatment object 18 whose treatment surface includes a second treatment surface 18b and a first treatment surface 18a surrounding the second treatment surface 18b, the treatment device including: a table section 10 for placing the treatment object 18 thereon; and a first feeding section 24 for feeding a first treatment liquid to an approximate boundary between the first and the second treatment surfaces 18a, 18b and a second feeding section 46 for feeding a second treatment liquid to the second treatment surface 18b. Thus, the present invention provides a treatment device, a treatment method, and a surface treatment jig, each of the treatment device and the treatment method being capable of carrying out independent treatments to a treatment surface and an exposed surface surrounding the treatment surface, respectively.
摘要翻译：本发明的处理装置100是对处理对象18进行处理的处理装置，处理对象18的处理面包括第二处理面18b和围绕第二处理面18b的第一处理面18a，处理装置包括：用于将处理对象18放置在其上的部分10; 以及用于将第一处理液体供给到第一处理用表面18a，第二处理用面18b之间的大致边界的第一供给部24以及向第二处理面18b供给第二处理液的第二供给部46。因此，本发明提供一种处理装置，处理方法和表面处理夹具，每个处理装置和处理方法能够分别对处理表面和处理表面周围的暴露表面进行独立处理。

6. 发明授权

US08701734B2 Separating apparatus and separating method 有权
标题翻译：分离装置和分离方法
公开(公告)号：US08701734B2
公开(公告)日：2014-04-22
申请号：US12453816
申请日：2009-05-22
申请人： Akihiko Nakamura
发明人： Akihiko Nakamura
IPC分类号： B32B38/10 , H01L21/687
CPC分类号： H01L21/68728 , H01L21/67011 , H01L21/67092 , H01L21/6838 , Y10T156/11 , Y10T156/1111 , Y10T156/1137 , Y10T156/1168 , Y10T156/1179 , Y10T156/1184 , Y10T156/1939 , Y10T156/1944 , Y10T156/1961 , Y10T156/1967
摘要： A separating apparatus according to the present invention includes a clamp for gripping an outer peripheral end of a supporting plate. The clamp grips the outer peripheral end of the supporting plate and separates the supporting plate from a wafer by gripping the supporting plate. This makes it possible to separate a supporting plate from a wafer without breaking the wafer. With this, a supporting plate can be separated from a wafer to which the supporting plate has been attached, without breaking the wafer.
摘要翻译：根据本发明的分离装置包括夹持支撑板的外周端的夹具。夹具夹持支撑板的外周端，并通过夹持支撑板将支撑板与晶片分离。这使得可以在不破坏晶片的情况下将支撑板与晶片分离。由此，支撑板可以与已经安装支撑板的晶片分离，而不会破坏晶片。

7. 发明授权

US08277679B2 Composite magnetic material and magnetic element 有权
标题翻译：复合磁性材料和磁性元件
公开(公告)号：US08277679B2
公开(公告)日：2012-10-02
申请号：US13024675
申请日：2011-02-10
申请人： Akihiko Nakamura , Keisuke Watanabe
发明人： Akihiko Nakamura , Keisuke Watanabe
IPC分类号： H01F1/147
CPC分类号： H01F1/14766 , B22F1/004 , B32B15/01 , C22C9/00 , C22C33/0257 , C22C38/02 , C22C38/04 , C22C38/34 , C22C38/38 , C22C2202/02 , H01F1/26 , H01F41/0246
摘要： The object of the present invention is to provide a composite magnetic material having well-balanced magnetic properties and chemical properties, and a magnetic element using thereof. Concretely, the present provides the composite magnetic material comprising a binder and a magnetic powder contains followings: Mn not less than 0.25 wt % and not larger than 3 wt %, Si not less than 1 wt % and not larger than 7 wt %, Cr not less than 2 wt % and not larger than 8 wt %, and the rest of Fe and inevitable impurities with respect to the total weight of a magnetic powder material, and a ratio of powder particles having the major/minor axis is not less than 2 is not larger than 5% of the total powder particles.
摘要翻译：本发明的目的是提供具有良好平衡的磁性能和化学性质的复合磁性材料，以及使用它的磁性元件。具体地，本发明提供了包含粘合剂的复合磁性材料和含有以下的磁性粉末：Mn不低于0.25重量％且不大于3重量％，Si不小于1重量％且不大于7重量％，Cr 不小于2重量％且不大于8重量％，其余的Fe和不可避免的杂质相对于磁粉末材料的总重量，并且具有主轴/短轴的粉末颗粒的比例不小于 2不大于总粉末颗粒的5％。

8. 发明授权

US08181660B2 Treatment liquid permeation unit and treating apparatus 有权
标题翻译：处理液渗透单元和处理装置
公开(公告)号：US08181660B2
公开(公告)日：2012-05-22
申请号：US12322156
申请日：2009-01-29
申请人： Akihiko Nakamura , Junichi Katsuragawa , Yasumasa Iwata
发明人： Akihiko Nakamura , Junichi Katsuragawa , Yasumasa Iwata
IPC分类号： B08B3/00 , B08B3/12 , B08B6/00
CPC分类号： H01L21/67092 , H01L21/67017 , H01L21/67132 , Y10T156/1111 , Y10T156/1126 , Y10T156/1922
摘要： A treatment liquid permeation unit comprises: at least one vibration unit; and a vibration transmission unit for transmitting a vibration from the vibration unit. The vibration transmission unit is positioned between an adhesive with which a wafer is combined to a supporting plate or an adhesive adhered to a surface of the wafer and the vibration unit. A vibration from the vibration unit is transmitted via the vibration transmission unit. This promotes the treatment liquid for dissolving the adhesive to permeate the adhesive to which the treatment liquid is supplied. Therefore, the treatment liquid can more uniformly permeate the adhesive in a shorter time. This allows the treatment liquid for dissolving the adhesive to permeate the adhesive with which the wafer is combined to the supporting plate or to permeate the adhesive adhered to the surface of the wafer in a shorter time.
摘要翻译：处理液体渗透单元包括：至少一个振动单元; 以及用于从振动单元传递振动的振动传递单元。振动传递单元位于与晶片组合的粘合剂与粘合到晶片表面的粘合剂和振动单元之间。来自振动单元的振动经由振动传递单元传递。这促进了用于溶解粘合剂的处理液渗透到供应处理液的粘合剂。因此，处理液可以在更短的时间内更均匀地渗透粘合剂。这使得用于溶解粘合剂的处理液渗透到晶片与支撑板组合的粘合剂上，或者在更短的时间内渗透粘附到晶片表面的粘合剂。

9. 发明授权

US08167687B2 Method of thinning wafer and support plate 失效
标题翻译：减薄晶圆和支撑板的方法
公开(公告)号：US08167687B2
公开(公告)日：2012-05-01
申请号：US12309285
申请日：2007-05-24
申请人： Akihiko Nakamura , Atsushi Miyanari , Yoshihiro Inao , Yasumasa Iwata
发明人： Akihiko Nakamura , Atsushi Miyanari , Yoshihiro Inao , Yasumasa Iwata
IPC分类号： B24B1/00 , B24B41/06
CPC分类号： B24B41/068 , B24B7/228 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L2221/68318 , H01L2221/68327
摘要： A wafer can be thinned without occurrences of dimples. A support plate 1 has a number of through holes 10. A circuit forming surface of a wafer 2 is adhered to one surface of the support plate by an adhesive member 4, and a dimple prevention member 3 having a thickness of 100 μm or more and having an adhesive layer 30 on one face is adhered to the other surface, thus the openings at both ends of the through holes 10 are blocked. The support plate is vacuum adsorbed to a support table through the dimple prevention member, and a non circuit-forming face of the wafer is ground/polished to thin the wafer. The dimple prevention member is stripped off, and a solvent is penetrated into the adhesive member through the through holes to detach the wafer from the support plate.
摘要翻译：晶片可以变薄而不发生凹坑。支撑板1具有多个通孔10.晶片2的电路形成表面通过粘合构件4和厚度为100μm以上的凹坑防止构件3粘附到支撑板的一个表面，以及在一个面上具有粘合剂层30粘附到另一个表面，因此通孔10的两端的开口被阻挡。支撑板通过凹坑防止构件被真空吸附到支撑台上，并且将晶片的非电路形成面研磨/抛光以使晶片变薄。剥去防止凹坑的构件，并且通过通孔将溶剂渗透到粘合构件中，以将晶片从支撑板上分离。

10. 发明授权

US07972654B2 Planarizing coating method 有权
标题翻译：平面涂布方法
公开(公告)号：US07972654B2
公开(公告)日：2011-07-05
申请号：US11937266
申请日：2007-11-08
申请人： Akihiko Nakamura
发明人： Akihiko Nakamura
IPC分类号： B05D3/12 , B05D1/38
CPC分类号： H01L21/31051 , H01L21/76819 , H01L21/76837
摘要： A planarizing coating method for filling a step between patterns formed on a board surface, includes the steps of: preparing at least two types of coating liquids different in non-volatile matter densities, first coating one of the coating liquids higher in density on the board surface, rotating the board so as to leave the one coating liquid inside the step and such that, at the same time, substantially none of the one coating liquid is left on a pattern crest of the patterns, subsequently coating another of the coating liquids lower in non-volatile matter density on the board surface, and rotating the board so that the coating liquid lower in density is left on a coating film comprising the one coating liquid higher in density and such that, at the same time, substantially none of the other coating liquid lower in density left on the pattern crest.
摘要翻译：用于在板表面上形成的图案之间填充台阶的平面化涂布方法包括以下步骤：制备不同于不挥发物质密度的至少两种类型的涂布液，首先在板上涂覆更高密度的涂布液之一表面，旋转板，以使步骤中的一个涂布液体留下，并且同时基本上没有一个涂布液体留在图案的图案峰上，随后再涂覆另一个涂布液体在板表面上的非挥发性物质密度，并且旋转板，使得密度较低的涂布液留在包含一个密度较高的一个涂布液的涂膜上，并且同时基本上没有一个其他涂层液体密度较低，留在图案峰上。

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