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1. 发明申请

US20120305914A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE 有权
标题翻译：半导体器件，显示器件和电子器件
公开(公告)号：US20120305914A1
公开(公告)日：2012-12-06
申请号：US13585077
申请日：2012-08-14
申请人： Hideki UOCHI , Daisuke KAWAE
发明人： Hideki UOCHI , Daisuke KAWAE
IPC分类号： H01L29/22 , H01L33/08
CPC分类号： H01L27/127 , G02F1/13454 , G02F1/13458 , G02F2001/13629 , H01L27/1225 , H01L29/7869
摘要： To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer in a cross-sectional view, and a functional circuit to which a signal is inputted from the electrode through the wiring and in which operation is controlled in accordance with the signal inputted. A capacitor is formed using an oxide semiconductor layer, an insulating layer, and a wiring or an electrode.
摘要翻译：减少对实际运行的不利影响，减少噪音的不利影响。包括电极，与电极电连接的布线，在俯视图中与电极重叠的氧化物半导体层，在截面图中设置在电极和氧化物半导体层之间的绝缘层的结构，以及功能电路通过布线从电极输入信号，并根据输入的信号控制操作。使用氧化物半导体层，绝缘层，布线或电极形成电容器。

2. 发明申请

US20110012118A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110012118A1
公开(公告)日：2011-01-20
申请号：US12835907
申请日：2010-07-14
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Hideki UOCHI
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Hideki UOCHI
IPC分类号： H01L27/12 , H01L29/786 , H01L21/84
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/45
摘要： An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。驱动器电路包括用于驱动电路的通道蚀刻薄膜晶体管和使用金属形成的驱动电路布线。用于驱动电路的薄膜晶体管的源极和漏极由金属形成。使用氧化物半导体形成用于驱动电路的薄膜晶体管的沟道层。显示部分包括用于像素的底接触薄膜晶体管和使用氧化物导体形成的显示部分布线。用于像素的薄膜晶体管的源极和漏极电极层使用氧化物导体形成。使用氧化物半导体形成用于像素的薄膜晶体管的半导体层。

3. 发明申请

US20100084653A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100084653A1
公开(公告)日：2010-04-08
申请号：US12571552
申请日：2009-10-01
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/7869 , H01L27/0266 , H01L27/1225 , H01L27/124
摘要： The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.
摘要翻译：保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 第一布线层和第二布线层，其在栅极绝缘膜上方并且其端部与栅电极重叠; 以及氧化物半导体层，其在所述栅电极的上方并与所述栅极绝缘膜和所述第一布线层和所述第二布线层的端部接触。非线性元件的栅电极和扫描线或信号线包括在布线中，非线性元件的第一或第二布线层直接连接到布线，以施加栅极的电位电极。

4. 发明申请

US20100081247A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100081247A1
公开(公告)日：2010-04-01
申请号：US12579642
申请日：2009-10-15
申请人： Hongyong ZHANG , Hideki UOCHI , Toru TAKAYAMA , Takeshi FUKUNAGA , Yasuhiko TAKEMURA
发明人： Hongyong ZHANG , Hideki UOCHI , Toru TAKAYAMA , Takeshi FUKUNAGA , Yasuhiko TAKEMURA
IPC分类号： H01L21/268
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film an a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过选择性地形成覆盖膜来形成具有薄膜晶体管的动态电路，同时获得漏电流低的晶体管和迁移率高的晶体管，即将成为有源层的半导体层晶体管，然后通过其热结晶。

5. 发明申请

US20100072468A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100072468A1
公开(公告)日：2010-03-25
申请号：US12556594
申请日：2009-09-10
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Rihito WADA , Yoko CHIBA
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Rihito WADA , Yoko CHIBA
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L27/1225 , G02F1/13392 , G02F1/13458 , G02F2001/13398 , G09G2300/0804 , H01L27/124 , H01L27/3262 , H01L27/3276 , H01L29/04 , H01L29/24 , H01L29/41733 , H01L29/66969 , H01L29/7869 , H01L51/5221
摘要： A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.
摘要翻译：显示装置包括其中像素电极层布置在矩阵中的像素部分，并且相应于像素电极设置具有至少两种具有不同量的氧的氧化物半导体层的组合的倒置交错薄膜晶体管层。在该显示装置的像素部的周围，设置有通过与像素电极层相同的材料形成的导电层与形成在对置基板上的公共电极层电连接的焊盘部。通过提供适合于设置在显示面板中的焊盘部分的结构，实现了本发明防止由于各种显示装置中的薄膜分离引起的缺陷的一个反对意见。

6. 发明申请

US20100072467A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100072467A1
公开(公告)日：2010-03-25
申请号：US12556593
申请日：2009-09-10
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Rihito WADA , Yoko CHIBA
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Rihito WADA , Yoko CHIBA
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L27/3276 , H01L27/1225 , H01L27/3262 , H01L29/7869 , H01L51/5221
摘要： A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.
摘要翻译：显示装置包括其中像素以矩阵形式布置的像素部分，该像素包括具有不同量的氧并且具有通道保护层的至少两种氧化物半导体层的组合的反交错薄膜晶体管半导体层作为与栅电极层重叠的沟道形成区域和与反交错薄膜晶体管电连接的像素电极层。在该显示装置的像素部的周围，设置由与像素电极层相同的材料构成的导电层的焊盘部。另外，导电层与形成在对置基板上的公共电极层电连接。

7. 发明申请

US20100065840A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20100065840A1
公开(公告)日：2010-03-18
申请号：US12553168
申请日：2009-09-03
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
IPC分类号： H01L33/00
CPC分类号： H01L27/0266 , G02F1/133305 , G02F1/1339 , G02F1/13394 , G02F1/134309 , G02F1/13624 , G02F1/1368 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/247 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.
摘要翻译：保护电路包括非线性元件，其还包括栅电极，覆盖栅电极的栅极绝缘层，一对第一和第二布线层，其端部与栅极绝缘层上的栅极重叠，并且其中堆叠导电层和第二氧化物半导体层，以及与至少栅电极重叠并与栅极绝缘层和第一布线层的导电层的侧面部分接触的第一氧化物半导体层和第二布线层和第二氧化物半导体层的侧面部分和顶面部分。在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。因此，可以降低结漏电，提高非线性元件的特性。

8. 发明申请

US20120300150A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20120300150A1
公开(公告)日：2012-11-29
申请号：US13567292
申请日：2012-08-06
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
IPC分类号： G02F1/1368 , H01L27/15
摘要： A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
摘要翻译：保护电路包括非线性元件，其包括栅电极，覆盖栅电极的栅极绝缘层，与栅极绝缘层上的栅电极重叠的第一氧化物半导体层，以及第一布线层和第二布线层其端部与第一氧化物半导体层上的栅电极重叠，并且其中层叠有导电层和第二氧化物半导体层。在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。因此，可以降低结漏电，提高非线性元件的特性。

9. 发明申请

US20110068339A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110068339A1
公开(公告)日：2011-03-24
申请号：US12958739
申请日：2010-12-02
申请人： Toshimitsu KONUMA , Akira SUGAWARA , Yukiko UEHARA , Hongyong ZHANG , Atsunori SUZUKI , Hideto OHNUMA , Naoaki YAMAGUCHI , Hideomi SUZAWA , Hideki UOCHI , Yasuhiko TAKEMURA
发明人： Toshimitsu KONUMA , Akira SUGAWARA , Yukiko UEHARA , Hongyong ZHANG , Atsunori SUZUKI , Hideto OHNUMA , Naoaki YAMAGUCHI , Hideomi SUZAWA , Hideki UOCHI , Yasuhiko TAKEMURA
IPC分类号： H01L29/772 , H01L27/12
CPC分类号： H01L29/665 , H01L21/02145 , H01L21/02244 , H01L21/02258 , H01L21/31116 , H01L21/31144 , H01L21/31683 , H01L21/31687 , H01L21/321 , H01L27/124 , H01L27/127 , H01L29/458 , H01L29/66598 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
摘要翻译：形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。此后，进行一个导电性元素的离子掺杂。高电阻率区域限定在栅极绝缘膜下。

10. 发明申请

US20100084652A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100084652A1
公开(公告)日：2010-04-08
申请号：US12571549
申请日：2009-10-01
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
IPC分类号： H01L33/00
CPC分类号： H01L27/1225 , H01L27/124 , H01L27/1244 , H01L27/127 , H01L29/1054 , H01L29/20 , H01L29/24 , H01L29/7869
摘要： A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.
摘要翻译：需要包括具有适当结构和占用面积小的氧化物半导体，保护电路等的显示装置。保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 在所述栅极绝缘层上方并与所述栅电极重叠的第一氧化物半导体层; 以及通过层叠导电层和第二氧化物半导体层而形成的第一布线层和第二布线层，并且其端部在第一氧化物半导体层上方并与栅电极重叠。非线性元件的栅电极连接到扫描线或信号线，非线性元件的第一布线层或第二布线层直接连接到栅极电极层，以施加电位栅电极。

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