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    • 4. 发明授权
    • Image processing apparatus, image processing method, image recognition apparatus, and image recognition method
    • 图像处理装置,图像处理方法,图像识别装置和图像识别方法
    • US08411906B2
    • 2013-04-02
    • US11951437
    • 2007-12-06
    • Atsushi OkuboJun Yokono
    • Atsushi OkuboJun Yokono
    • G06K9/00
    • G06K9/00268G06K9/6231G06K9/6234
    • The present invention provides an information processing apparatus including combination generating means for getting a first feature quantity of N dimensions, N being an integer of at least two, from first information prepared for execution of learning and use the first feature quantity of N dimensions to generate at least two of a first feature quantity combination that are not greater than N dimensions of the first feature quantity; and learning processing executing means for computing a correlation coefficient between the plurality of first feature quantity combinations generated by the combination generating means and a learning model feature quantity matching each dimension of the plurality of first feature quantity combinations and, by use of the first correlation coefficient, classify the first information, thereby executing learning processing for classifying predetermined second information.
    • 本发明提供了一种信息处理装置,包括从用于执行学习的第一信息获得N维的第一特征量N,至少为2的整数的组合生成装置,并且使用N维的第一特征量来生成 不大于第一特征量的N维的第一特征量组合中的至少两个; 以及学习处理执行装置,用于计算由组合生成装置生成的多个第一特征量组合和与多个第一特征量组合中的每个维度相匹配的学习模型特征量之间的相关系数,并且通过使用第一相关系数 对第一信息进行分类,从而执行用于对预定的第二信息进行分类的学习处理。
    • 8. 发明授权
    • Method of fabricating semiconductor laser using selective growth
    • 使用选择性增长制造半导体激光器的方法
    • US06171878B2
    • 2001-01-09
    • US09157246
    • 1998-09-18
    • Tsuyoshi FujimotoYumi NaitoAtsushi OkuboYoshikazu Yamada
    • Tsuyoshi FujimotoYumi NaitoAtsushi OkuboYoshikazu Yamada
    • H01S302
    • H01S5/2231B82Y20/00H01S5/2077H01S5/2206H01S5/34313H01S5/3432H01S2304/00
    • In a self-aligned structure semiconductor laser in which a pair of optical guide layers are respectively formed on both faces of an active layer, the optical guide layers having a bandgap which is wider than that of the active layer, a pair of cladding layers are formed so as to sandwich the active layer and the optical guide layers, the cladding layers having a bandgap which is wider than bandgap of the optical guide layers, a pair of carrier blocking layers are respectively formed between the active layer and the optical guide layers, the carrier blocking layers having a bandgap which is wider than bandgaps of the active layer and the optical guide layers, and a current blocking layer having a stripe-like window is embedded in at least one of the optical guide layers, the current blocking layer is formed by selective growth. In this way, a window of a current blocking layer can be accurately formed and the fabrication yield can be improved while avoiding maleffects on other layers.
    • 在其中在有源层的两个表面上分别形成一对导光层的自对准结构半导体激光器中,具有比有源层宽的带隙的导光层,一对包覆层是 形成为夹持有源层和导光层,包层具有比导光层的带隙宽的带隙,在有源层和导光层之间分别形成一对载流子阻挡层, 具有比有源层和导光层的带隙宽的带隙的载流子阻挡层和具有条状窗口的电流阻挡层嵌入到至少一个导光层中,电流阻挡层是 通过选择性生长形成。以这种方式,可以精确地形成电流阻挡层的窗口,并且可以提高制造产率,同时避免对其他层的不良影响。