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    • 2. 发明授权
    • Photoconductor for electrophotography and method of manufacturing the same
    • 用于电子照相的感光体及其制造方法
    • US06200714B1
    • 2001-03-13
    • US09451883
    • 1999-12-01
    • Yoichi NakamuraTeruo SasakiKenichi HaraHideki KinaAkira Ootani
    • Yoichi NakamuraTeruo SasakiKenichi HaraHideki KinaAkira Ootani
    • G03G5047
    • G03G5/062Y10S430/103
    • An electrophotographic photoconductor includes a phosphinate additive in a photosensitive film that improves the stability of the coating liquid for the photosensitive film. The electrophotographic photoconductor includes an electrically conductive substrate and a photosensitive film on the substrate. The photosensitive film contains a charge generation agent and a phosphinate compound. The photoconductor may be of either a monolayer or a laminate construction. In the case of a laminate type photoconductor, the phosphinate compound is incorporated into the charge transport layer. A method of making an electrophotographic photoconductor adds a phosphinate additive to the coating liquid for a photosensitive film to improve stability of the coating liquid. The method involves producing a coating liquid containing a phosphinate compound and coating a conductive substrate with the coating liquid to form a photosensitive film.
    • 电子照相感光体包括在感光膜中的次膦酸盐添加剂,其提高了用于感光膜的涂布液的稳定性。 电子照相感光体包括基底上的导电基底和感光膜。 感光膜含有电荷产生剂和次膦酸盐化合物。 光电导体可以是单层或层压结构。 在层叠型光电导体的情况下,将次膦酸盐化合物并入电荷输送层。 制造电子照相感光体的方法在感光膜用涂布液中添加次膦酸添加剂,以提高涂布液的稳定性。 该方法包括制备含有次膦酸盐化合物的涂布液并用涂布液涂覆导电性基材以形成感光膜。
    • 6. 发明授权
    • Electrophotographic selenium photoconductor
    • 电子照相硒光电导体
    • US06228545B1
    • 2001-05-08
    • US09325582
    • 1999-06-03
    • Makoto FujiiHideki Kina
    • Makoto FujiiHideki Kina
    • G03G5082
    • G03G5/08207
    • A selenium photoconductor has a charge transport layer and a charge generation layer formed on a conductive substrate. Both the charge generation layer and the charge transport layer are made from a selenium-arsenic alloy, with the charge generation layer having a concentration of arsenic greater than the concentration of arsenic in the charge transport layer. This concentration distribution results in a photoconductor having excellent charge-generation efficiency and mobility. In an alternate embodiment, a halogen is doped into the charge generation layer and charge transport layer. The resulting photoconductor is useful in large-scale, high speed printing operations.
    • 硒光电导体具有形成在导电性基板上的电荷输送层和电荷产生层。 电荷产生层和电荷输送层均由硒 - 砷合金制成,电荷产生层的砷浓度大于电荷输送层中砷的浓度。 该浓度分布导致具有优异的电荷产生效率和迁移率的光电导体。 在替代实施例中,卤素被掺杂到电荷产生层和电荷传输层中。 所得到的光电导体可用于大规模高速打印操作。
    • 8. 发明授权
    • Photoconductor for electrophotography
    • 电子照相用感光体
    • US6045958A
    • 2000-04-04
    • US241134
    • 1999-02-01
    • Akio AraiHideki Kina
    • Akio AraiHideki Kina
    • G03G5/00G03G5/043G03G5/08G03G5/082G03G5/10G03G5/047
    • G03G5/0433G03G5/08207
    • A first selenium-arsenic layer of a photoconductor, deposited on a conductive substrate, has a thickness and arsenic concentration effective to preserve an electrically charged surface potential in darkness and to transport carriers generated on exposure to light. The first layer is between 20 to 70 .mu.m thick. A second amorphous selenium-arsenic alloy layer, formed on the first layer, generates carriers on exposure to light. The surface roughness, Rmax., of the conductive substrate is less than or equal to 0.5 .mu.m. The first layer, or both of the photoconductive layers, are doped with iodine. When both layers contain iodine, the iodine content of the second layer is equal to or less than that of the first layer. The thickness of the second layer is between 5 to 30 .mu.m. The arsenic content of the amorphous selenium-arsenic alloy of the second layer is equal to or greater than that in the first layer. After deposition of the first and second layers, the photoconductor is heat treated at between 100.degree. to 200.degree. for 30 to 80 minutes. In a further embodiment the first layer of the photoconductor has an arsenic content in the range of 10 to 45 wt %. The second layer arsenic content is in the range of 25 to 45 wt %.
    • 沉积在导电衬底上的光电导体的第一硒 - 砷层具有有效地在黑暗中保持带电荷的表面电位和传输在曝光时产生的载流子的厚度和砷浓度。 第一层厚度在20至70μm之间。 形成在第一层上的第二非晶态硒 - 砷合金层在曝光时产生载流子。 导电基板的表面粗糙度Rmax小于或等于0.5μm。 第一层或两个光电导层掺杂碘。 当两层含有碘时,第二层的碘含量等于或小于第一层的碘含量。 第二层的厚度为5〜30μm。 第二层的无定形硒 - 砷合金的砷含量等于或大于第一层中的砷含量。 在沉积第一层和第二层之后,光电导体在100至200℃之间热处理30至80分钟。 在另一个实施方案中,光电导体的第一层的砷含量在10至45重量%的范围内。 第二层砷含量在25〜45重量%的范围内。