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1. 发明申请

US20160104736A1 SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF THE SAME, ELECTRONIC EQUIPMENT, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：固态成像装置及其制造方法，电子设备和半导体器件
公开(公告)号：US20160104736A1
公开(公告)日：2016-04-14
申请号：US14851857
申请日：2015-09-11
申请人： Hideki Hirano , Akiko Ogino , Kenju Nishikido , Iwao Sugiura , Haruhiko Ajisawa , Ikuo Yoshihara
发明人： Hideki Hirano , Akiko Ogino , Kenju Nishikido , Iwao Sugiura , Haruhiko Ajisawa , Ikuo Yoshihara
IPC分类号： H01L27/146
CPC分类号： H01L27/14625 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/14645 , H01L29/0619 , H01L29/0623 , H01L2224/05 , Y10S148/07
摘要： A solid-state imaging device includes: a photodiode formed to be segmented with respect to each pixel in a pixel area in which plural pixels are integrated on a light receiving surface of a semiconductor substrate; an insulator film formed on the semiconductor substrate to cover the photodiode; a recessed part formed with respect to each of the pixels in the insulator film in an upper part of the photodiode; a first light transmission layer of a siloxane resin formed to fill the recessed part and configure an optical waveguide in the pixel area; a second light transmission layer formed to configure an on-chip lens with respect to each of the pixels in the pixel area; and a guard ring formed to surround an outer circumference of the pixel area to partition an inner area containing the pixel area and an outer dicing area.
摘要翻译：一种固态成像装置，包括：形成为相对于其中多个像素集成在半导体衬底的光接收表面上的像素区域中的每个像素被分割的光电二极管; 形成在半导体衬底上以覆盖光电二极管的绝缘膜; 相对于光电二极管的上部中的绝缘体膜中的每个像素形成的凹部; 形成为填充凹部的硅氧烷树脂的第一透光层，并且构成像素区域中的光波导; 形成为相对于像素区域中的每个像素配置片上透镜的第二透光层; 以及保护环，其形成为围绕像素区域的外周，以分隔包含像素区域和外部切割区域的内部区域。

2. 发明授权

US09171877B2 Semiconductor imaging device having ligth transmission layers formed relative to a guard ring structure in a predetermined manner 有权
标题翻译：具有相对于保护环结构以预定方式形成的透光层的半导体成像装置
公开(公告)号：US09171877B2
公开(公告)日：2015-10-27
申请号：US12634338
申请日：2009-12-09
申请人： Hideki Hirano , Akiko Ogino , Kenju Nishikido , Iwao Sugiura , Haruhiko Ajisawa , Ikuo Yoshihara
发明人： Hideki Hirano , Akiko Ogino , Kenju Nishikido , Iwao Sugiura , Haruhiko Ajisawa , Ikuo Yoshihara
IPC分类号： H01L27/146 , H01L29/06
CPC分类号： H01L27/14625 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/14645 , H01L29/0619 , H01L29/0623 , H01L2224/05 , Y10S148/07
摘要： A solid-state imaging device includes: a photodiode formed to be segmented with respect to each pixel in a pixel area in which plural pixels are integrated on a light receiving surface of a semiconductor substrate; an insulator film formed on the semiconductor substrate to cover the photodiode; a recessed part formed with respect to each of the pixels in the insulator film in an upper part of the photodiode; a first light transmission layer of a siloxane resin formed to fill the recessed part and configure an optical waveguide in the pixel area; a second light transmission layer formed to configure an on-chip lens with respect to each of the pixels in the pixel area; and a guard ring formed to surround an outer circumference of the pixel area to partition an inner area containing the pixel area and an outer dicing area.
摘要翻译：一种固态成像装置，包括：形成为相对于其中多个像素集成在半导体衬底的光接收表面上的像素区域中的每个像素被分割的光电二极管; 形成在半导体衬底上以覆盖光电二极管的绝缘膜; 相对于光电二极管的上部中的绝缘体膜中的每个像素形成的凹部; 形成为填充凹部的硅氧烷树脂的第一透光层，并且构成像素区域中的光波导; 形成为相对于像素区域中的每个像素配置片上透镜的第二透光层; 以及保护环，其形成为围绕像素区域的外周，以分隔包含像素区域和外部切割区域的内部区域。

3. 发明授权

US06383941B1 Method of etching organic ARCs in patterns having variable spacings 失效
标题翻译：在具有可变间隔的图案中蚀刻有机ARC的方法
公开(公告)号：US06383941B1
公开(公告)日：2002-05-07
申请号：US09611085
申请日：2000-07-06
申请人： Meihua Shen , Kenju Nishikido , Jeffrey D. Chinn , Dragan Podlesnik
发明人： Meihua Shen , Kenju Nishikido , Jeffrey D. Chinn , Dragan Podlesnik
IPC分类号： H01L2100
CPC分类号： H01L21/31138 , H01L21/0276 , H01L21/3065
摘要： The present disclosure relates to semiconductor processing, and to the plasma etching of organic layers, and in particular antireflective coating layers. We have discovered a particular combination of gases useful in producing chemically reactive plasma species, which provides unexpected control over etched feature critical dimension, etch profile, and uniformity of etch across a substrate surface, despite a difference in the spacing of etched features over the substrate surface. The combination of gases which produces chemically reactive plasma species consists essentially of CxHyFz, a bromine-comprising compound (which is typically HBr), and O2, where x ranges from 1 to 4, y ranges from 0 to 3, and z ranges from 1 to 10. Oxygen atoms may be substituted for hydrogen atoms in the CxHyFz compound to a limited extent Essentially inert gases which do not produce chemically reactive species may be added to the combination of etchant-species producing gases. A combination of CF4/HBr/O2 has been demonstrated to work well. With this combination of plasma source gases, critical Dimension (CD) uniformity control across the surface of the substrate is generally improved by using a volumetric ratio of CxHyFz:HBr ranging from about 2:1 to about 5:1, with a range of about 3:1 to about 4:1 being preferred. An increased plasma density also helps improve CD uniformity control. The volumetric ratio of (CxHyFz+HBr):O2 should range between about 1:1 to 5:1, with a range of about 2:1 to about 3:1 being preferred.
摘要翻译：本公开涉及半导体处理，以及有机层的等离子体蚀刻，特别是抗反射涂层。我们已经发现了可用于生产化学反应性等离子体物质的特定气体组合，尽管蚀刻特征在衬底上的间隔有差异，但是它们对蚀刻特征临界尺寸，蚀刻轮廓以及衬底表面上的蚀刻均匀性提供了意想不到的控制表面。产生化学反应性等离子体物质的气体的组合基本上由CxHyFz，含溴化合物（通常为HBr）和O 2组成，其中x为1至4，y为0至3，z的范围为1 氧原子可以在有限的程度上代替CxHyFz化合物中的氢原子。基本上不产生化学反应性物质的惰性气体可以添加到产生蚀刻剂的气体组合中。 CF4 / HBr / O2的组合已被证明是有效的。通过这种等离子体源气体的组合，通常通过使用C 2 H 4 F 5 :H 2 O的体积比约2:1至约5:1的体积比来改善基底表面上的临界尺寸（CD）均匀性控制，其范围为约优选3:1至约4:1。增加的等离子体密度也有助于改善CD均匀性控制。（C x H y F z + HBr）：O 2的体积比应在约1:1至5:1之间，优选约2:1至约3:1的范围。

4. 发明授权

US08711263B2 Solid-state imaging device and electronic apparatus with antireflection structure 有权
标题翻译：固态成像装置和具有防反射结构的电子装置
公开(公告)号：US08711263B2
公开(公告)日：2014-04-29
申请号：US13317469
申请日：2011-10-19
申请人： Kenju Nishikido , Kazunori Nagahata
发明人： Kenju Nishikido , Kazunori Nagahata
IPC分类号： H04N5/335
CPC分类号： H01L27/14636 , H01L23/482 , H01L27/14605 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L2924/0002 , H04N5/335 , H04N5/361 , H04N5/378 , H01L2924/00
摘要： A solid-state imaging device includes a pixel region formed on a semiconductor substrate, an effective pixel region and a shielded optical black region in the pixel region, a multilayer wiring layer formed on a surface of the side opposite to a light incident side of the semiconductor substrate, a supporting substrate bonded to a surface of the multilayer wiring layer side, and an antireflection structure that is formed on the bonding surface side of the supporting substrate.
摘要翻译：一种固体摄像器件，包括形成在半导体衬底上的像素区域，像素区域中的有效像素区域和屏蔽光学黑色区域，多层布线层，形成在与所述像素区域的光入射侧相反的一侧的表面上半导体衬底，结合到多层布线层侧的表面的支撑衬底，以及形成在支撑衬底的接合表面侧上的抗反射结构。

5. 发明申请

US20120120294A1 Solid-state imaging device and electronic apparatus 有权
标题翻译：固态成像装置和电子装置
公开(公告)号：US20120120294A1
公开(公告)日：2012-05-17
申请号：US13317469
申请日：2011-10-19
申请人： Kenju Nishikido , Kazunori Nagahata
发明人： Kenju Nishikido , Kazunori Nagahata
IPC分类号： H01L31/0216 , H04N5/335
CPC分类号： H01L27/14636 , H01L23/482 , H01L27/14605 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L2924/0002 , H04N5/335 , H04N5/361 , H04N5/378 , H01L2924/00
摘要： An solid-state imaging device includes a pixel region formed on a semiconductor substrate, an effective pixel region and a shielded optical black region in the pixel region, a multilayer wiring layer formed on a surface of the side opposite to a light incident side of the semiconductor substrate, a supporting substrate bonded to a surface of the multilayer wiring layer side, and an antireflection structure that is formed on the bonding surface side of the supporting substrate.
摘要翻译：固态成像装置包括形成在半导体衬底上的像素区域，像素区域中的有效像素区域和屏蔽光学黑色区域，多层布线层，形成在与所述像素区域的光入射侧相反的一侧的表面上半导体衬底，结合到多层布线层侧的表面的支撑衬底，以及形成在支撑衬底的接合表面侧上的抗反射结构。

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