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    • 9. 发明授权
    • Method of manufacturing conductive pattern and electronic device, and electronic device
    • 制造导电图案和电子装置的方法以及电子装置
    • US07704783B2
    • 2010-04-27
    • US10599131
    • 2005-10-14
    • Tohru Nakagawa
    • Tohru Nakagawa
    • H01L51/40
    • H05K3/061B82Y10/00B82Y40/00C23F1/02G03F7/0002H01L21/32139H01L51/0022H05K2203/013
    • The manufacturing method includes forming a molecular film 16 of at least one kind of molecule on a part of a conductive film 13 by placing, on the conductive film 13, a solution 12 containing the one kind of molecule dissolved therein, with the one kind of molecule being selected from the group consisting of: a molecule expressed by Formula (1): CF3(CF2)n(CH2)mSH, where n indicates a natural number of 3 to 7 while m denotes a natural number of 8 to 18; and a molecule expressed by Formula (2): CF3(CF2)p(CH2)qSS(CH2)q′(CF2)p′CF3, where p and p′ each are a natural number of 3 to 7 independently while q and q′ each are a natural number of 8 to 18 independently. Subsequently, the conductive film 13 located in a part where the molecular film 16 has not been formed is removed by bringing the conductive film 13 into contact with an etchant for the conductive film 13. Thus, a conductive pattern 17 is formed.
    • 制造方法包括通过在导电膜13上放置含有溶解有一种分子的溶液12,在导电膜13的一部分上形成至少一种分子的分子膜16, 分子选自由式(1)表示的分子:CF 3(CF 2)n(CH 2)m SH,其中n表示3至7的自然数,而m表示8至18的自然数; 和由式(2)表示的分子:CF 3(CF 2)p(CH 2)q SS(CH 2)q'(CF 2)p'CF 3,其中p和p'各自独立地为3至7的自然数,而q和q “每个都是8到18的自然数。 随后,通过使导电膜13与用于导电膜13的蚀刻剂接触来去除位于未形成分子膜16的部分的导电膜13.因此,形成导电图案17。