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    • 5. 发明授权
    • Pn junction optical modulating device having a buffer layer with small
energy gap
    • 具有具有小能隙的缓冲层的Pn结光调制装置
    • US4991921A
    • 1991-02-12
    • US442521
    • 1989-11-27
    • Masatoshi SuzukiHideaki TanakaShigeyuki AkibaYuichi Matsushima
    • Masatoshi SuzukiHideaki TanakaShigeyuki AkibaYuichi Matsushima
    • G02F1/015G02F1/025
    • G02F1/025G02F2001/0157
    • An optical modulating device is disclosed which has, on a substrate directly or via a lower cladding layer, an optical waveguide layer, an upper cladding layer of a refractive index smaller than that of the optical waveguide layer and a pair of electrodes for applying an electric field across the substrate and the upper cladding layer and in which the absorption coefficient for incident light of a fixed intensity incident to the optical waveguide layer is varied by the electric field applied across the pair of electrodes to perform the modulation of the light and the modulated light is emitted from a light emitting end face of the optical waveguide layer. In accordance with the present invention, a pn junction is formed in the upper cladding layer and at least one buffer layer of an energy gap smaller than that of the upper cladding layer but larger than that of the optical waveguide layer is interposed between the upper cladding layer and the optical waveguide layer.
    • 公开了一种光学调制装置,其在衬底上直接或经由下包层,光波导层,折射率小于光波导层的折射率的上包层和用于施加电的一对电极 并且其中入射到光波导层的固定强度的入射光的吸收系数由施加在该对电极上的电场而变化,以执行光的调制和被调制的 光从光波导层的发光端面发射。 根据本发明,在上部包层中形成pn结,并且至少一个能量间隙的缓冲层比上部包覆层的能隙小,但是比光波导层大的缓冲层插入在上部包层 层和光波导层。