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1. 发明授权

US07700381B2 Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them 失效
标题翻译：具有ID标记的半导体晶圆，其半导体器件的制造方法和制造方法
公开(公告)号：US07700381B2
公开(公告)日：2010-04-20
申请号：US11350027
申请日：2006-02-09
申请人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
发明人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L23/544 , H01L2223/54406 , H01L2223/54413 , H01L2223/54433 , H01L2223/54493 , H01L2924/0002 , Y10S438/974 , H01L2924/00
摘要： A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.
摘要翻译：半导体晶片具有沿其周边形成的斜面轮廓，形成在晶片上的产品和形成在斜面轮廓上的ID标记。 ID标记至少显示产品的性能，制造条件和测试结果。

2. 发明申请

US20060131696A1 Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them 失效
公开(公告)号：US20060131696A1
公开(公告)日：2006-06-22
申请号：US11350027
申请日：2006-02-09
申请人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
发明人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
IPC分类号： H01L29/06 , H01L23/02
CPC分类号： H01L23/544 , H01L2223/54406 , H01L2223/54413 , H01L2223/54433 , H01L2223/54493 , H01L2924/0002 , Y10S438/974 , H01L2924/00
摘要： A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

3. 发明授权

US07057259B2 Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them 失效
公开(公告)号：US07057259B2
公开(公告)日：2006-06-06
申请号：US10101337
申请日：2002-03-20
申请人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
发明人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
IPC分类号： H01L29/06
CPC分类号： H01L23/544 , H01L2223/54406 , H01L2223/54413 , H01L2223/54433 , H01L2223/54493 , H01L2924/0002 , Y10S438/974 , H01L2924/00
摘要： A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

4. 发明授权

US5071776A Wafer processsing method for manufacturing wafers having contaminant-gettering damage on one surface 失效
标题翻译：用于制造在一个表面上具有污染物捕获损伤的波形的WAFER处理方法
公开(公告)号：US5071776A
公开(公告)日：1991-12-10
申请号：US275866
申请日：1988-11-25
申请人： Yoshiaki Matsushita , Moriya Miyashita , Makiko Wakatsuki , Norihiko Tsuchiya , Atsuko Kubota
发明人： Yoshiaki Matsushita , Moriya Miyashita , Makiko Wakatsuki , Norihiko Tsuchiya , Atsuko Kubota
IPC分类号： H01L21/304 , H01L21/306 , H01L21/322
CPC分类号： H01L21/02008 , H01L21/3221 , Y10S438/974
摘要： First, silicon wafers are formed by cutting silicon monocrystalline ingot into slices. Then back side and main surfaces of the wafers are subjected to lapping and etching processes. Next, the wafers are submerged into substantially pure water and ultrasonic waves are applied to the wafer surface via the water to clean at least one of the surfaces of each of the wafers and form gettering damage on the wafer surface. After this, the main surfaces of the wafers which have been subjected to the cleaning and damage-forming process and on which semiconductor elements are to be formed are polished into mirror finish.

5. 发明授权

US4980300A Gettering method for a semiconductor wafer 失效
标题翻译：一种半导体晶圆的吸杂方法
公开(公告)号：US4980300A
公开(公告)日：1990-12-25
申请号：US275864
申请日：1988-11-25
申请人： Moriya Miyashita , Shintaro Yoshii , Keiko Sakuma
发明人： Moriya Miyashita , Shintaro Yoshii , Keiko Sakuma
IPC分类号： H01L21/00 , H01L21/304 , H01L21/322
CPC分类号： H01L21/67023 , H01L21/3221 , Y10S438/974
摘要： When a surface of semiconductor wafer is treated for gettering, ultrasonic waves are caused to propagate along the surface of the semiconductor wafer, through pure water. Mechanical damages are formed on the surface of the semiconductor wafer along which the ultrasonic waves propagated, the damages serving as a back side damage.

6. 发明授权

US4971920A Gettering method for semiconductor wafers 失效
标题翻译：半导体晶圆吸收法
公开(公告)号：US4971920A
公开(公告)日：1990-11-20
申请号：US275868
申请日：1988-11-25
申请人： Moriya Miyashita , Ayako Maeda
发明人： Moriya Miyashita , Ayako Maeda
IPC分类号： H01L21/304 , H01L21/306 , H01L21/322
CPC分类号： H01L21/02052 , H01L21/3221
摘要： An ultrasonic wave is propagated to the surface of a semiconductor wafer in pure water to effect the gettering treatment with respect to the surface of the semiconductor wafer. Mechanical damages are formed on the surface of the semiconductor wafer to which the ultrasonic wave is applied, and at the same time the surface of the semiconductor wafer is cleaned. The mechanical damages serve to function as back side damage.

7. 发明授权

US5508800A Semiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrate 失效
标题翻译：半导体衬底，半导体衬底和半导体器件的制造方法以及半导体衬底的检查和评估方法
公开(公告)号：US5508800A
公开(公告)日：1996-04-16
申请号：US31924
申请日：1993-03-16
申请人： Moriya Miyashita , Hachiro Hiratsuka , Atsuko Kubota , Shuichi Samata , Masanori Numano , Hiroyuki Fukui
发明人： Moriya Miyashita , Hachiro Hiratsuka , Atsuko Kubota , Shuichi Samata , Masanori Numano , Hiroyuki Fukui
IPC分类号： H01L21/66 , G01N1/28 , G01N21/84 , G01N21/95 , H01L21/306 , G01N21/88
CPC分类号： H01L21/02046 , G01N21/9501 , H01L21/02019 , H01L21/02052 , H01L21/30608
摘要： There are provided a method of inspecting and evaluating semiconductor substrates, good quality semiconductor substrates, a method of manufacturing good quality semiconductor substrates, and a method of manufacturing semiconductor devices using good quality semiconductor substrates.A semiconductor substrate is processed with aqueous basic solution. In this process, the substrate is dipped in the aqueous solution or exposed to a vapor of the aqueous solution. With this process, the surface of the substrate is selectively etched. The substrate surface after the etching process is radiated with a laser beam to measure a light scattered point density. The quality of the substrate can be judged in accordance with the measured density. A thermal treatment may be carried out before or after processing the substrate with the aqueous basic solution. The thermal treatment considerably changes the fine defect density on the surface of the substrate. In accordance with such a change, the quality of the substrate may be judged. If a substrate judged as having a good quality is used, a semiconductor device having a good quality substrate can be obtained.
摘要翻译：提供了一种检查和评估半导体衬底，优质半导体衬底，制造优质半导体衬底的方法以及使用优质半导体衬底制造半导体器件的方法。用碱性水溶液处理半导体衬底。在该方法中，将基材浸渍在水溶液中或暴露于水溶液的蒸气中。通过该工艺，选择性地蚀刻衬底的表面。蚀刻处理后的基板表面用激光束照射以测量光散射点密度。可以根据测量的密度来判断基板的质量。热处理可以在用碱性水溶液处理基材之前或之后进行。热处理显着地改变了衬底表面上的细小缺陷密度。根据这样的变化，可以判断基板的质量。如果使用判断为质量好的基板，则可以获得具有优质基板的半导体器件。

8. 发明授权

US5951755A Manufacturing method of semiconductor substrate and inspection method therefor 失效
标题翻译：半导体衬底的制造方法及其检测方法
公开(公告)号：US5951755A
公开(公告)日：1999-09-14
申请号：US801113
申请日：1997-02-14
申请人： Moriya Miyashita , Masanobu Ogino , Tadahide Hoshi , Masanori Numano , Shuichi Samata , Akiko Sekihara , Keiko Akita
发明人： Moriya Miyashita , Masanobu Ogino , Tadahide Hoshi , Masanori Numano , Shuichi Samata , Akiko Sekihara , Keiko Akita
IPC分类号： H01L21/322 , C30B25/92
CPC分类号： H01L21/3225
摘要： A manufacturing method for manufacturing a semiconductor substrate has first annealing step for annealing silicon single crystal to permit oxygen embryos or oxygen precipitations grown from the oxygen embryos precipitating in a predetermined region and a second annealing step for permitting said oxygen embryos or said oxygen precipitations to contract using a second temperature range higher than the first temperature range, said second temperature range being high enough to contract said oxygen embryos and low enough to prevent redistribution of boron from affecting to device characteristics, to form a denuded zone in said predetermined region at the principal surface. An inspection method for inspecting a semiconductor substrate further has measuring step, subsequent to said first and second annealing steps for measuring the density of oxygen embryos grown into oxygen precipitations among those precipitated in said silicon single crystal.
摘要翻译：用于制造半导体衬底的制造方法具有用于使硅单晶退火的第一退火步骤，以允许从预定区域中的氧胚生长的氧胚胎或氧沉淀，以及用于允许所述氧胚胎或所述氧沉淀物收缩的第二退火步骤使用高于第一温度范围的第二温度范围，所述第二温度范围足够高以收缩所述氧胚，并且足够低以防止硼的再分布影响到设备特性，以在主体的所述预定区域中形成裸露区域表面。用于检查半导体衬底的检查方法还具有测量步骤，在所述第一和第二退火步骤之后，测量在所述硅单晶中析出的氧沉淀物中生长的氧胚胎的密度。

9. 发明授权

US06222252B1 Semiconductor substrate and method for producing the same 失效
标题翻译：半导体衬底及其制造方法
公开(公告)号：US06222252B1
公开(公告)日：2001-04-24
申请号：US09069146
申请日：1998-04-29
申请人： Masanori Numano , Moriya Miyashita
发明人： Masanori Numano , Moriya Miyashita
IPC分类号： H01L2930
CPC分类号： C30B29/06 , C30B15/00 , H01L21/823412 , H01L21/823493 , H01L27/10844 , H01L29/32 , Y10S257/913
摘要： A semiconductor substrate is provided which can efficiently exhibit intrinsic gettering (IG) effect, is less likely to cause slipping or dislocation, and causes no significant lowering in mechanical strength. The semiconductor substrate has bulk micro defects dispersed at a density of not less than 1011 micro defects/cm3 in the interior thereof.
摘要翻译：提供能够有效地显示固有吸气（IG）效应的半导体衬底，不太可能引起滑脱或错位，并且不会显着降低机械强度。半导体衬底具有在其内部以不小于1011微缺陷/ cm3的密度分散的大量微缺陷。

10. 发明授权

US6037270A Method of manufacturing semiconductor device and methods of processing, analyzing and manufacturing its substrate 失效
标题翻译：半导体器件的制造方法及其衬底的加工，分析和制造方法
公开(公告)号：US6037270A
公开(公告)日：2000-03-14
申请号：US496677
申请日：1995-06-29
申请人： Mokuji Kageyama , Moriya Miyashita
发明人： Mokuji Kageyama , Moriya Miyashita
IPC分类号： H01L21/316 , H01L21/26 , H01L21/306 , H01L21/311 , H01L21/66 , C23F1/24 , C23F1/10
CPC分类号： H01L21/31111 , H01L21/02052 , H01L22/12
摘要： The gate oxide film is prevented from being thinned partially. The semiconductor substrate (wafer) can be etched (processed) under excellent conditions. The impurities on the wafer surface can be analyzed and further reduced. In the first aspect, the substrate is irradiated with ultraviolet rays in contact with an F-containing aqueous solution, so that the oxide film and the substrate can be etched at roughly the same etching speed under excellent controllability without deteriorating the planarization of the substrate. In the second aspect, the substrate is etched by irradiating ultraviolet rays during exposure to an acid aqueous solution, so that surface metallic contamination and particles can be removed without deteriorating the wafer surface roughness. Further, the impurity elements in the outermost surface layer of the wafer can be analyzed at high precision by analyzing elements contained in the acid aqueous solution used for the etching. According to the third aspect, holes and electrons are recombined in the polycrystal silicon during irradiation of the ultraviolet rays, and metallic impurities are dissolved into the aqueous solution as ions, so that metallic impurities in the polycrystal silicon can be reduced.
摘要翻译：防止栅极氧化膜部分变薄。可以在优异的条件下对半导体衬底（晶片）进行蚀刻（处理）。可以分析晶圆表面上的杂质并进一步减少。在第一方面中，用与含F水溶液接触的紫外线照射基板，从而可以在优异的可控性下以大致相同的蚀刻速度蚀刻氧化膜和基板，而不会劣化基板的平坦化。在第二方面中，通过在暴露于酸性水溶液时照射紫外线来蚀刻基板，从而可以除去表面金属污染物和颗粒，而不会降低晶片表面粗糙度。此外，通过分析用于蚀刻的酸性水溶液中所含的元素，可以高精度地分析晶片的最外表面层中的杂质元素。根据第三方面，在紫外线照射期间，多晶硅中的空穴和电子被重新结合，并且金属杂质作为离子溶解在水溶液中，从而可以减少多晶硅中的金属杂质。

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