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1. 发明授权

US4704526A Apparatus of regulating shape of focused ion beams 失效
标题翻译：调节聚焦离子束形状的装置
公开(公告)号：US4704526A
公开(公告)日：1987-11-03
申请号：US783247
申请日：1985-10-02
申请人： Hideaki Kyogoku , Takashi Kaito
发明人： Hideaki Kyogoku , Takashi Kaito
IPC分类号： G03F1/00 , G03F1/72 , G03F1/74 , H01J37/153 , H01J37/304 , H01L21/027 , G01N23/00
CPC分类号： G03F1/74 , H01J37/153 , H01J37/304
摘要： An apparatus for regulating the shape of a focused ion beam irradiates a sample which is comprised of a pattern on a substrate with a scanning ion beam, detectors for detecting two kinds of secondary ions one emitted from the substrate and the other emitted from the pattern, comparators for comparing the detected signals with respective predetermined values and then converting the detected signals into binary signals, and a color display for displaying the shapes of the substrate and the pattern in the form of pictures of different colors on the basis of the binary signals corresponding to each kind of secondary ions. The spot shape of the ion beam is corrected with an astigmatic correction electrode and/or an object lens while observing the shape of the overlapping portions of the pictures of different colors.
摘要翻译：用于调节聚焦离子束的形状的装置用扫描离子束照射由衬底上的图案构成的样品，用于检测从衬底发射的两种二次离子的检测器和从该图案发射的另一种二次离子，比较器，用于将检测到的信号与各个预定值进行比较，然后将检测到的信号转换为二进制信号;以及彩色显示器，用于基于相应的二进制信号以不同颜色的图像的形式显示基板和图案的形状对各种二次离子。在观察不同颜色的图像的重叠部分的形状的同时，用散光校正电极和/或物镜校正离子束的斑点形状。

2. 发明申请

US20100288924A1 COMPOSITE FOCUSED ION BEAM DEVICE, PROCESS OBSERVATION METHOD USING THE SAME,AND PROCESSING METHOD 有权
标题翻译：复合聚焦离子束装置，使用该方法的方法观察方法和处理方法
公开(公告)号：US20100288924A1
公开(公告)日：2010-11-18
申请号：US12733091
申请日：2008-08-06
申请人： Takashi Kaito , Yoshitomo Nakagawa , Junichi Tashiro , Yasuhiko Sugiyama , Toshiaki Fujii , Kazuo Aita , Takashi Ogawa
发明人： Takashi Kaito , Yoshitomo Nakagawa , Junichi Tashiro , Yasuhiko Sugiyama , Toshiaki Fujii , Kazuo Aita , Takashi Ogawa
IPC分类号： H01J37/26 , H01J37/30 , H01J37/08
CPC分类号： H01J37/08 , G01N1/04 , G01N1/06 , H01J37/3005 , H01J37/3056 , H01J2237/0807 , H01J2237/0817 , H01J2237/31745
摘要： A composite focused ion beam device includes a first ion beam irradiation system 10 including a liquid metallic ion source for generating a first ion, and a second ion beam irradiation system 20 including a gas field ion source for generating a second ion. A beam diameter of the second ion beam 20A emitted from the second ion beam irradiation system 20 is smaller than that of the first ion beam 10A emitted from the first ion beam irradiation system 1
摘要翻译：复合聚焦离子束装置包括包括用于产生第一离子的液体金属离子源的第一离子束照射系统10和包括用于产生第二离子的气体离子源的第二离子束照射系统20。从第二离子束照射系统20发射的第二离子束20A的光束直径小于从第一离子束照射系统1发射的第一离子束10A的光束直径

3. 发明申请

US20050167614A1 Gas blowingnozzle of charged particle beam apparatus and charged particle beam apparatus as well as working method 有权
标题翻译：带电粒子束装置和带电粒子束装置的气体吹扫喷嘴以及工作方法
公开(公告)号：US20050167614A1
公开(公告)日：2005-08-04
申请号：US11048962
申请日：2005-02-02
申请人： Takashi Kaito
发明人： Takashi Kaito
IPC分类号： A61N5/00 , G21G5/00 , G21K5/10 , H01J37/305 , H01J37/317
CPC分类号： H01J37/3056 , H01J2237/31744
摘要： There are provided a gas blowing nozzle adapted such that, by the fact that a groove-like notch structure has been provided in a side to which a beam IB comes flying in a nozzle tip part of a gas gun used on the occasion of a beam assist deposition or a beam assist etching, the beam IB can pass through an inside of the notch structure, and a charged particle beam apparatus having the gas blowing nozzle 11 as well as a working method.
摘要翻译：提供了一种气体喷射喷嘴，其适于使得通过在梁1B的一侧中设置有槽状切口结构的事实在梁的使用中使用的气枪的喷嘴尖端部分中飞行辅助沉积或光束辅助蚀刻，光束IB可以穿过凹口结构的内部，以及具有气体喷射喷嘴11的带电粒子束装置以及工作方法。

4. 发明授权

US5525806A Focused charged beam apparatus, and its processing and observation method 失效
标题翻译：聚焦带电束装置及其加工和观察方法
公开(公告)号：US5525806A
公开(公告)日：1996-06-11
申请号：US191863
申请日：1994-02-04
申请人： Koji Iwasaki , Tatsuya Adachi , Yutaka Ikku , Takashi Kaito
发明人： Koji Iwasaki , Tatsuya Adachi , Yutaka Ikku , Takashi Kaito
IPC分类号： H01J37/244 , G01N1/32 , G01Q30/02 , G01Q30/20 , H01J37/28 , H01J37/30 , H01J37/305 , H01J37/26
CPC分类号： G01N1/32 , H01J37/3056 , H01J2237/2067 , H01J2237/30466 , H01J2237/31745
摘要： To process sample of specific portion or position for the transmission electron microscope [TEM] simply to the most suitable or optimal shape, and to confirm the sample thickness of the sample while processing above (on-going confirmation). To make TEM sample through etching by way of irradiation of ion beam 2 onto sample 4, and to confirm processing status of sample by way of irradiating electron beam 7 from horizontal angle to cross-section of sample, and of detecting secondary electron, reflection electron, X ray, and transmission electron with respective detector 5, 9, 10, and 11, and to estimate the thickness of sample in process above since the intensities of these signals above changes due to the thin film thickness of sample.
摘要翻译：为了将透射电子显微镜[TEM]的特定部位或位置的样品简单地处理为最合适或最佳形状，并在上述处理（确认）时确认样品的样品厚度。为了通过在样品4上照射离子束2进行蚀刻来制造TEM样品，并且通过从水平角对样品的横截面照射电子束7并且检测二次电子，反射电子来确认样品的处理状态，X射线和透射电子，并且估计上述样品的厚度，因为这些信号的强度由于样品的薄膜厚度而改变。

5. 发明授权

US08269194B2 Composite focused ion beam device, and processing observation method and processing method using the same 有权
标题翻译：复合聚焦离子束装置及其加工方法及处理方法
公开(公告)号：US08269194B2
公开(公告)日：2012-09-18
申请号：US12733089
申请日：2008-08-06
申请人： Takashi Kaito , Junichi Tashiro , Yasuhiko Sugiyama , Kouji Iwasaki , Toshiaki Fujii , Kazuo Aita , Takashi Ogawa
发明人： Takashi Kaito , Junichi Tashiro , Yasuhiko Sugiyama , Kouji Iwasaki , Toshiaki Fujii , Kazuo Aita , Takashi Ogawa
IPC分类号： H01J49/00
CPC分类号： H01J37/3056 , G01N1/286 , G01N1/32 , G03F1/74 , G03F1/84 , H01J37/08 , H01J37/3005 , H01J2237/0805 , H01J2237/0807 , H01J2237/31745
摘要： A composite focused ion beam device has a sample stage for supporting a sample, a first ion beam irradiation system that irradiates a first ion beam for processing the sample, and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a liquid metal ion source that generates first ions for forming the first ion beam. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. The first ion beam irradiated by the first ion beam irradiation system has a first beam diameter and the second ion beam irradiated by the second ion beam irradiation system has a second beam diameter smaller than the first beam diameter. The first and second ion beam irradiation systems are disposed relative to the sample stage so that axes of the first and second ion beams are orthogonal to a tilt axis of the sample stage.
摘要翻译：复合聚焦离子束装置具有用于支撑样品的样品台，照射用于处理样品的第一离子束的第一离子束照射系统和照射第二离子束以用于处理或观察样品的第二离子束照射系统样品。第一离子束照射系统具有产生用于形成第一离子束的第一离子的液态金属离子源。第二离子束照射系统具有产生用于形成第二离子束的第二离子的气体场离子源。由第一离子束照射系统照射的第一离子束具有第一光束直径，并且由第二离子束照射系统照射的第二离子束具有小于第一光束直径的第二光束直径。第一和第二离子束照射系统相对于样品台设置，使得第一和第二离子束的轴线垂直于样品台的倾斜轴。

6. 发明申请

US20070176099A1 Atom probe apparatus and method for working sample preliminarily for the same 有权
标题翻译：原子探针装置及其工作原理方法
公开(公告)号：US20070176099A1
公开(公告)日：2007-08-02
申请号：US10592844
申请日：2005-03-02
申请人： Takashi Kaito
发明人： Takashi Kaito
IPC分类号： G01N23/00
CPC分类号： G01N1/32 , B82Y35/00 , H01J2237/3109
摘要： Problems to be solved by the present invention are to present a technique for preliminarily working a sample, which makes a place, that is desired to be analyzed, of a device into an acicular protrusion by locally cutting out the place, and to provide, even if the sample is a sample of a multilayer structure containing element layers whose evaporation electric fields are small in later-mentioned circumstances, a technique for making a stable ion evaporation in order possible, thereby making an SAP analysis at an atomic level possible. A preliminarily working of a sample for an atom probe apparatus of the invention comprises a step of cutting out a sample's desired observation site to a block-like form by using an FIB apparatus, a step of carrying and fixing the block-like cut-out sample onto a sample substrate, and a step of working the block-like sample fixed onto the sample substrate into a needle tip shape by an FIB etching. Further, the sample worked into the needle tip shape is formed such that a layer direction of a multilayer structure becomes parallel to a longitudinal direction of a needle.
摘要翻译：本发明要解决的问题在于，通过局部地切割该位置，提出一种将装置预先加工成针状突起物的方法，从而将装置进行预先加工成针状突起的技术，如果样品是在稍后提到的情况下含有蒸发电场小的元素层的多层结构的样品，则可以顺序进行稳定的离子蒸发的技术，从而使原子级的SAP分析成为可能。对于本发明的原子探针装置的样品的预先加工包括通过使用FIB装置将样品的期望的观察位置切割成块状的步骤，携带和固定块状切口的步骤样品到样品基板上，以及通过FIB蚀刻将固定在样品基板上的块状样品加工成针尖形状的步骤。此外，加工成针尖形状的样品形成为使得多层结构的层方向平行于针的纵向方向。

7. 发明申请

US20050089463A1 Method for fabricating nanometer-scale structure 有权
标题翻译：制造纳米级结构的方法
公开(公告)号：US20050089463A1
公开(公告)日：2005-04-28
申请号：US10951000
申请日：2004-09-27
申请人： Masatoshi Yasutake , Takashi Kaito , Yoshiharu Shirakawabe , Itaru Kitajima
发明人： Masatoshi Yasutake , Takashi Kaito , Yoshiharu Shirakawabe , Itaru Kitajima
IPC分类号： B82B3/00 , B82B1/00 , C01B31/00 , C01B31/02 , C23C16/48 , D01C5/00 , D01F9/12 , D01F9/127 , G01Q60/00 , G01Q70/12
CPC分类号： G01Q70/12 , C01B32/162 , D01F9/12 , D01F9/1276
摘要： In a method for fabricating a nanometer-scale structure by arranging nanotubes in a predetermined direction at a predetermined position, the method for fabricating a nanometer-scale structure comprises a first step of planarizing a substrate by etching a predetermined part by irradiating a focused energy beam to the sample, a second step of decomposing and depositing an organic gas into a columnar structure with an objective of determining the position and direction, and a third step of attaching and fixing the nanotube by using the thus deposited columnar structure as a standard of position and direction.
摘要翻译：在通过在预定位置处以预定方向布置纳米管制造纳米级结构的方法中，纳米级结构的制造方法包括：通过照射聚焦能量束来蚀刻预定部分来平坦化基板的第一步骤以样品的方式分解和沉积有机气体到目标为确定位置和方向的柱状结构中的第二步骤，以及通过使用这样沉积的柱状结构作为位置标准来附着和固定纳米管的第三步骤和方向。

8. 发明申请

US20050066882A1 Method for forming ultra-high strength elastic diamond like carbon structure 审中-公开
标题翻译：形成超高强度弹性金刚石如碳结构的方法
公开(公告)号：US20050066882A1
公开(公告)日：2005-03-31
申请号：US10482178
申请日：2002-06-28
申请人： Jun-ichi Fujita , Masanhiko Ishida , Yukinori Ochiai , Shinji Matsui , Takashi Kaito
发明人： Jun-ichi Fujita , Masanhiko Ishida , Yukinori Ochiai , Shinji Matsui , Takashi Kaito
IPC分类号： C01B31/02 , B81C1/00 , C01B31/06 , C23C16/04 , C23C16/26 , C23C16/27 , C23C16/44 , C23C16/455 , C30B7/00 , C30B21/02 , C30B23/00 , C30B25/00 , C30B28/06 , C30B28/12 , C30B28/14
CPC分类号： C23C16/45517 , B81C1/00111 , C01B32/25 , C23C16/047 , C23C16/26 , C23C16/45591
摘要： A technique of forming an elastic DLC structure having ultra high strength by controlling an amount of focused ion beam current from 0.1 to 10 pA, and a growth rate in the range from 0.6 to 5 μm/min. and by using hydrocarbon gas such as phenanthrene (C14H10) and pyrene (C16H10), as source gas, in an apparatus having a gas nozzle for locally maintaining a higher partial gas pressure near the substrate and a structure for confining the gas on the substrate. In this manner, the elastic DLC having the ultra high strength can be obtained of which a hardness can be controlled in a relatively broader range.
摘要翻译：通过控制聚焦离子束电流量为0.1〜10pA，生长速度为0.6〜5mum / min，形成具有超高强度的弹性DLC结构的技术。并且通过使用诸如菲（C14H10）和芘（C16H10）的烃气体作为源气体，在具有用于在基板附近局部保持较高局部气体压力的气体喷嘴的装置和用于将气体限制在基板上的结构。以这种方式，可以获得具有超高强度的弹性DLC，其可以在相对较宽的范围内控制硬度。

9. 发明授权

US06544897B2 Method for forming a vertical edge submicron through-hole and a thin film sample with this kind of through-hole 有权
公开(公告)号：US06544897B2
公开(公告)日：2003-04-08
申请号：US10001332
申请日：2001-10-26
申请人： Takashi Kaito
发明人： Takashi Kaito
IPC分类号： H01L21311
CPC分类号： G03F1/20 , H01J2237/3118
摘要： A method for forming a vertical edge submicron through-hole comprises the steps of; forming a hole on a sample thin film with a larger diameter than design size of a through-hole, with a bottom having a thickness close to the design size remaining, by etching using a focused ion beam device; forming a through-hole with the design size on the bottom section by focused ion beam etching; and backfilling the large hole to the design size by deposition using a focused ion beam device.

10. 发明授权

US5376883A Analysis of integrated circuit operability using a focused ion beam 失效
标题翻译：使用聚焦离子束分析集成电路的可操作性
公开(公告)号：US5376883A
公开(公告)日：1994-12-27
申请号：US984921
申请日：1992-12-04
申请人： Takashi Kaito
发明人： Takashi Kaito
IPC分类号： G01R31/28 , G01R31/303 , H01J37/252 , H01L21/66
CPC分类号： G01R31/303
摘要： A method and apparatus for analyzing the operability of a semiconductor integrated circuit without removing a passivation film formed on a surface of the circuit and also for analyzing causes of failure of such circuit. The integrated circuit wiring receives an AC test signal and a predetermined portion of the surface of the circuit is simultaneously scanned and irradiated with a focused ion beam while the portion is irradiated with an electron beam to neutralize charges produced by the ion beam irradiation. Then, secondary electrons which are released from the surface of the circuit as a result of the focused ion beam irradiation are detected, and the detected signals are matched with a scanning signal to display an image of the semiconductor integrated circuit.
摘要翻译：一种用于分析半导体集成电路的可操作性而不去除形成在电路表面上的钝化膜的方法和装置，并且还用于分析这种电路的故障原因。集成电路布线接收AC测试信号，同时用聚焦离子束扫描和照射电路表面的预定部分，同时用电子束照射该部分以中和由离子束照射产生的电荷。然后，检测作为聚焦离子束照射的结果从电路表面释放的二次电子，并且检测到的信号与扫描信号相匹配，以显示半导体集成电路的图像。

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