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1. 发明申请

US20100133530A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100133530A1
公开(公告)日：2010-06-03
申请号：US12624888
申请日：2009-11-24
申请人： Kengo AKIMOTO , Toshinari SASAKI , Hideaki KUWABARA
发明人： Kengo AKIMOTO , Toshinari SASAKI , Hideaki KUWABARA
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/45 , H01L29/66742 , H01L29/786 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.
摘要翻译：在使用氧化物半导体作为有源层的薄膜晶体管中，为了防止用作有源层的氧化物半导体区域的组成，膜质量，界面等的变化，并且为了稳定化薄膜晶体管的电气特性。在其中使用第一氧化物半导体区域作为有源层的薄膜晶体管中，在第一氧化物半导体区域和用于薄的第一氧化物半导体区域的保护绝缘层之间形成具有比第一氧化物半导体区域低导电性的第二氧化物半导体区域由此第二氧化物半导体区域用作第一氧化物半导体区域的保护层; 因此，可以防止第一氧化物半导体区域的组成变化或膜质量的劣化，并且能够稳定薄膜晶体管的电特性。

2. 发明申请

US20100117078A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100117078A1
公开(公告)日：2010-05-13
申请号：US12614786
申请日：2009-11-09
申请人： Hideaki KUWABARA , Kengo AKIMOTO , Toshinari SASAKI
发明人： Hideaki KUWABARA , Kengo AKIMOTO , Toshinari SASAKI
IPC分类号： H01L29/786 , H01L29/12 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.
摘要翻译：目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是稳定薄膜晶体管的电特性。在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化，使得薄膜晶体管的电特性能够稳定。

3. 发明申请

US20130001545A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20130001545A1
公开(公告)日：2013-01-03
申请号：US13613456
申请日：2012-09-13
申请人： Hideaki KUWABARA , Kengo AKIMOTO , Toshinari SASAKI
发明人： Hideaki KUWABARA , Kengo AKIMOTO , Toshinari SASAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.

4. 发明申请

US20120058600A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120058600A1
公开(公告)日：2012-03-08
申请号：US13292207
申请日：2011-11-09
申请人： Hideaki KUWABARA , Kengo AKIMOTO , Toshinari SASAKI
发明人： Hideaki KUWABARA , Kengo AKIMOTO , Toshinari SASAKI
IPC分类号： H01L21/34
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.
摘要翻译：目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是稳定薄膜晶体管的电特性。在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化，使得薄膜晶体管的电特性能够稳定。

5. 发明申请

US20110024751A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110024751A1
公开(公告)日：2011-02-03
申请号：US12846556
申请日：2010-07-29
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO , Masashi TSUBUKU , Toshinari SASAKI , Hideaki KUWABARA
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Masashi TSUBUKU , Toshinari SASAKI , Hideaki KUWABARA
IPC分类号： H01L27/12 , H01L29/786 , H01L21/84
CPC分类号： H01L33/0041 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L29/78606 , H01L29/7869 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed.
摘要翻译：在使用第一氧化物半导体层和第二氧化物半导体层的堆叠的底栅极薄膜晶体管中，形成作为沟道保护层的氧化物绝缘层，与氧化物半导体层的与栅电极层。在与绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的叠层的周边部分（包括侧面）的氧化物绝缘层。

6. 发明申请

US20100133531A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100133531A1
公开(公告)日：2010-06-03
申请号：US12627204
申请日：2009-11-30
申请人： Kengo AKIMOTO , Toshinari SASAKI
发明人： Kengo AKIMOTO , Toshinari SASAKI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733 , H01L29/66969
摘要： A gate electrode layer over a substrate; a gate insulating layer over the gate electrode layer; a first source electrode layer and a first drain electrode layer over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; and a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer. A first part, a second part, and a third part of a bottom surface are in contact with the first source electrode layer, the first drain electrode layer, and the gate insulating layer respectively. A first part and a second part of the top surface are in contact with the second source electrode layer and the second drain electrode layer respectively. The first source electrode layer and the first drain electrode layer are electrically connected to the second source electrode layer and the second drain electrode layer respectively.
摘要翻译：衬底上的栅电极层; 栅电极层上的栅极绝缘层; 栅极绝缘层上的第一源极电极层和第一漏极电极层; 栅极绝缘层上的氧化物半导体层; 以及在所述氧化物半导体层上的第二源极电极层和第二漏极电极层。第一部分，第二部分和底部表面的第三部分分别与第一源极电极层，第一漏极电极层和栅极绝缘层接触。上表面的第一部分和第二部分分别与第二源极电极层和第二漏极电极层接触。第一源极电极层和第一漏极电极层分别与第二源极电极层和第二漏极电极层电连接。

7. 发明申请

US20120273780A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120273780A1
公开(公告)日：2012-11-01
申请号：US13547377
申请日：2012-07-12
申请人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Akiharu MIYANAGA , Kengo AKIMOTO , Kojiro SHIRAISHI
发明人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Akiharu MIYANAGA , Kengo AKIMOTO , Kojiro SHIRAISHI
IPC分类号： H01L29/12
CPC分类号： H01L29/78618 , G02F1/133345 , G02F1/133528 , G02F1/134336 , G02F1/13439 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2201/123 , G09G3/3674 , G09G2310/0286 , H01L27/1225 , H01L27/3262 , H01L29/247 , H01L29/66969 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
摘要翻译：一个实施例是包括反向交错（底栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间电极层。有意地在源极和漏极电极层与半导体层之间提供具有比半导体层高的载流子浓度的缓冲层，从而形成欧姆接触。

8. 发明申请

US20120256179A1 TRANSISTOR AND DISPLAY DEVICE 审中-公开
标题翻译：晶体管和显示器件
公开(公告)号：US20120256179A1
公开(公告)日：2012-10-11
申请号：US13528009
申请日：2012-06-20
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.
摘要翻译：提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

9. 发明申请

US20120241735A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：US20120241735A1
公开(公告)日：2012-09-27
申请号：US13421038
申请日：2012-03-15
申请人： Tatsuya HONDA , Hiroshi KANEMURA , Kengo AKIMOTO , Suzunosuke HIRAISHI
发明人： Tatsuya HONDA , Hiroshi KANEMURA , Kengo AKIMOTO , Suzunosuke HIRAISHI
IPC分类号： H01L29/22
CPC分类号： H01L29/247 , H01L29/04 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film.
摘要翻译：提供了具有更稳定的电特性并且基本上由氧化铟锌组成的氧化物半导体膜。此外，提供了通过使用氧化物半导体膜具有稳定的电特性的高度可靠的半导体器件。基本上由氧化铟锌组成的氧化物半导体膜具有六边形晶体结构，其中ab平面基本上平行于氧化物半导体膜的表面，并且其中ab平面基本上平行于氧化物表面的菱方晶体结构半导体膜。

10. 发明申请

US20120138922A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：US20120138922A1
公开(公告)日：2012-06-07
申请号：US13307398
申请日：2011-11-30
申请人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
摘要翻译：提供了具有更稳定的导电性的氧化物半导体膜。此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

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