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1. 发明授权

US4507160A Impurity reduction technique for mercury cadmium telluride 失效
标题翻译：汞镉镉杂质降低技术
公开(公告)号：US4507160A
公开(公告)日：1985-03-26
申请号：US564871
申请日：1983-12-23
申请人： Jeffrey D. Beck , Herbert F. Schaake , John H. Tregilgas , Michael A. Kinch
发明人： Jeffrey D. Beck , Herbert F. Schaake , John H. Tregilgas , Michael A. Kinch
IPC分类号： H01L21/385 , H01L21/477 , H01L21/324
CPC分类号： H01L21/385 , H01L21/477
摘要： The disclosure relates to a method for reducing impurity concentration in mercury cadmium telluride alloys wherein impurities are attracted to a region saturated with second phase tellurium during annealing in a saturated mercury atmosphere where the second phase tellurium and the impurities attracted thereto can be removed by polishing, etching, grinding, or the like.
摘要翻译：本公开涉及一种降低汞镉碲合金中的杂质浓度的方法，其中在饱和汞气氛中退火期间，杂质被吸引到饱和第二相碲的区域，其中第二相碲及其吸附的杂质可通过抛光除去，蚀刻，研磨等。

2. 发明授权

US4504334A Gettering method for mercury cadmium telluride 失效
标题翻译：碲化汞吸附方法
公开(公告)号：US4504334A
公开(公告)日：1985-03-12
申请号：US564872
申请日：1983-12-23
申请人： Herbert F. Schaake , John H. Tregilgas , Jeffrey D. Beck
发明人： Herbert F. Schaake , John H. Tregilgas , Jeffrey D. Beck
IPC分类号： H01L21/477 , H01L21/324 , H01L21/385
CPC分类号： H01L21/477
摘要： The disclosure relates to a method for removing the unwanted impurities from an HgCdTe alloy which consists of the steps of depositing a thin film on the order of from about 1 to about 100 microns in thickness of tellurium onto the backside of a mercury cadmium telluride bar to insure the presence of a substantial amount of excess tellurium on the backside of the alloy bar and allow the gettering mechanism to work. A protective film to shield the tellurium film from mercury ambient atmosphere is then optionally placed over the tellurium film. The protective film can be formed of a silicon oxide such as SiO and is preferably in the range of about 1000 angstroms to 10 microns or more in thickness. The bar with the tellurium and protective film thereon is then annealed at a temperature of less than 450.degree. C., preferably about 280.degree. C., for a period of from about one day to about four weeks in a saturated mercury atmosphere to allow the impurities in the alloy to diffuse to the backside thereof and into the tellurium layer. The bulk of the impurities will travel into the tellurium layer within a matter of several days at the preferred temperature noted hereinabove. The tellurium layer and protective film are then removed such as by grinding, etching or other appropriate method to remove the impurities from the alloy bar.
摘要翻译：本公开涉及一种从HgCdTe合金中除去不需要的杂质的方法，该方法包括以下步骤：将碲厚度约1至约100微米的薄膜沉积到碲化汞镉池的背面上，确保在合金棒的背面存在大量过量的碲，并允许吸气机构工作。然后任选地将碲膜从汞环境大气屏蔽的保护膜放置在碲膜上。保护膜可以由诸如SiO的氧化硅形成，并且优选在约1000埃到10微米或更大的范围内。然后将其上具有碲和保护膜的棒在饱和汞气氛中在小于450℃，优选约280℃的温度下退火约1天至约4周的时间，以使合金中的杂质扩散到其背面并进入碲层。在上述优选温度下，大部分杂质将在数天内进入碲层。然后通过研磨，蚀刻或其它适当的方法除去碲层和保护膜以从合金棒中除去杂质。

3. 发明授权

US4501625A Method of producing homogeneously doped HgCdTe which contains a fast diffusing dopant impurity 失效
标题翻译：制备均匀掺杂HgCdTe的方法，其含有快速扩散掺杂剂杂质
公开(公告)号：US4501625A
公开(公告)日：1985-02-26
申请号：US564953
申请日：1983-12-23
申请人： John H. Tregilgas , Jeffrey D. Beck , Michael A. Kinch , Herbert F. Schaake
发明人： John H. Tregilgas , Jeffrey D. Beck , Michael A. Kinch , Herbert F. Schaake
IPC分类号： C30B33/00 , H01L21/324
CPC分类号： C30B33/00 , C30B29/48
摘要： The disclosure relates to a method for making extrinsically doped HgCdTe alloys containing Cu, Ag, or Au or other dopant impurity whereby the excess tellurium in the core is annihilated (stoichiometrically compensated by excess in-diffusing Hg) and the dopant impurities are then permitted to randomly move through the slab to provide for homogeneity thereof. A post-annealing step of much greater than normal temperature-time length than was provided in the prior art is used. A standard post-annealing step in a saturated mercury vapor atomosphere leaves second phase tellurium (and gettered impurities) at the center of the slab, and longer term post-annealing negates this situation by annihilating the second phase tellurium in the slab and thus permitting the impurities to randomly travel by solid state diffusion throughout the slab to ultimately be distributed therein in a homogeneous manner. The additional time required for the post-annealing step following the normal prior art post-annealing step varies based upon slice or slab thickness, the metal-Te stoichiometry, and second post-annealing step temperature and, in general, will be longer but in the same range as that used in the prior post-annealing stage. Following annihilation of the second phase tellurium from the core, the impurity is homogenized in the slab by further annealing for from about one hour to about 20 weeks at a temperature under 300.degree. C., preferably 280.degree. C., by solid state diffusion.
摘要翻译：本公开内容涉及一种制备含Cu，Ag或Au或其他掺杂杂质的二次掺杂HgCdTe合金的方法，其中芯中的过量碲被消除（化学计量地通过过量扩散Hg补偿），然后允许掺杂剂杂质随机移动通过平板以提供其均匀性。使用比常规温度 - 时间长度远大于现有技术中提供的后退火步骤。在饱和汞蒸汽大气层中的标准后退火步骤在板坯的中心留下第二相碲（和杂质），并且较长期的后退火通过湮灭板坯中的第二相碲来抵消这种情况，从而允许通过整个板坯的固态扩散随机行进的杂质最终以均匀的方式分布在其中。在常规现有技术的后退火步骤之后的后退火步骤所需的额外时间基于切片或板厚度，金属-Te化学计量和第二后退火步骤温度而变化，并且通常将更长，但是在与先前的后退火阶段中使用的范围相同。在从芯芯湮灭第二相碲后，通过固态扩散在300℃，优选280℃的温度下，通过进一步退火约1小时至约20周，在板坯中均匀化杂质。

4. 发明授权

US4481044A High-temperature Hg anneal for HgCdTe 失效
标题翻译： HgCdTe的高温Hg退火
公开(公告)号：US4481044A
公开(公告)日：1984-11-06
申请号：US591903
申请日：1984-03-21
申请人： Herbert F. Schaake , John H. Tregilgas
发明人： Herbert F. Schaake , John H. Tregilgas
IPC分类号： C22C1/00 , H01L21/477 , C21D1/74
CPC分类号： C22C1/007 , H01L21/477 , Y10S438/971
摘要： The dislocation density near the surface of Hg.sub.1-x Cd.sub.x Te alloys is substantially reduced by annealing the material at around 600.degree. C. in a mercury saturated ambient for periods of four hours or more, prior to post annealing at lower temperatures to control the metal vacancy concentration. This procedure allows dislocation reduction by climb, reduces the concentration of metal vacancies which can collapse to form dislocation loops or contribute to dislocation multiplication, and reduces tellurium precipitates which contribute to dislocation multiplication during subsequent post annealing.
摘要翻译：在Hg1-xCdxTe合金表面附近的位错密度通过在大约600℃下在汞饱和环境中退火4小时或更长的时间，在较低温度下退火之后大大降低材料，以控制金属空位浓度。该步骤允许通过爬升减少位错，减少可能塌陷以形成位错环或有助于位错倍增的金属空位的浓度，并且减少在随后的后退火期间有助于位错倍增的碲沉淀物。

5. 发明授权

US5959299A Uncooled infrared sensors for the detection and identification of chemical products of combustion 失效
标题翻译：用于检测和识别燃烧化学产品的未冷却的红外传感器
公开(公告)号：US5959299A
公开(公告)日：1999-09-28
申请号：US831101
申请日：1997-04-01
申请人： Carlos A. Castro , Malcolm J. Bevan , Sebastian R. Borrello , Kent R. Carson , Luigi Colombo , Herbert F. Schaake , Donald F. Weirauch
发明人： Carlos A. Castro , Malcolm J. Bevan , Sebastian R. Borrello , Kent R. Carson , Luigi Colombo , Herbert F. Schaake , Donald F. Weirauch
IPC分类号： H01L27/146 , H01L31/0296
CPC分类号： H01L27/14652
摘要： This is a sensor for, and a method of, determining if a particular type of flame is present, using at least two uncooled HgCdTe detector films on a common IR transmissive substrate. Specific examples of the types of radiation which can be identified include gasoline flames, natural gas flames, and organic combustion flames (identified, e.g., by comparing the amount of combined carbon dioxide and carbon monoxide to the amount of water vapor). The ratio of carbon dioxide to carbon monoxide can also be determined. The sensor can include a first HgCdTe filter (88) on a common IR transmissive substrate (42), a first uncooled HgCdTe detector film (86) over the first filter (88), and a second uncooled HgCdTe detector film (92) on a CdTe insulator which is either on the first uncooled HgCdTe detector film, or on a second HgCdTe filter (94) provided on the common IR transmissive substrate.
摘要翻译：这是一种用于确定特定类型的火焰是否存在的传感器，并且使用在共同的IR透射基底上使用至少两个非冷却的HgCdTe检测膜。可以鉴定的辐射类型的具体实例包括汽油火焰，天然气火焰和有机燃烧火焰（例如通过比较组合的二氧化碳和一氧化碳的量与水蒸气的量的比较来确定）。也可以确定二氧化碳与一氧化碳的比例。传感器可以包括在公共IR透射基板（42）上的第一HgCdTe滤光器（88），在第一过滤器（88）上方的第一非冷却的HgCdTe检测器膜（86）和位于第一过滤器（88）上的第二非冷却HgCdTe检测器膜 CdTe绝缘体位于第一非冷却的HgCdTe检测器膜上，或者位于公共IR透射基底上的第二HgCdTe滤光器（94）上。

6. 发明授权

US4960728A Homogenization anneal of II-VI compounds 失效
标题翻译： II-VI化合物的均质退火
公开(公告)号：US4960728A
公开(公告)日：1990-10-02
申请号：US257141
申请日：1988-10-11
申请人： Herbert F. Schaake , Roland J. Koestner
发明人： Herbert F. Schaake , Roland J. Koestner
IPC分类号： H01L21/477
CPC分类号： H01L21/477 , Y10S148/003 , Y10S148/015 , Y10S148/064 , Y10S148/097 , Y10S438/902
摘要： Films of Hg.sub.1-x Cd.sub.x Te grown at low temperatures by MBE or MOCVD are homogenized by annealing at about 350.degree. C. for 1.25 to 3 hours.
摘要翻译：通过MBE或MOCVD在低温下生长的Hg1-xCdxTe薄膜通过在约350℃下退火1.25-3小时来均质化。

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