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1. 发明申请

US20120106827A1 WAFER INSPECTION METHOD 审中-公开
标题翻译：波形检测方法
公开(公告)号：US20120106827A1
公开(公告)日：2012-05-03
申请号：US13186970
申请日：2011-07-20
申请人： Heon Park , U-Lam Lee , Cheong-Soo Kim , Jong-Man Kim
发明人： Heon Park , U-Lam Lee , Cheong-Soo Kim , Jong-Man Kim
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： A wafer inspection method comprises: performing an exposure process on a wafer partitioned into fields, wherein the exposure process is performed on a first plurality of the fields in a first scan direction and wherein the exposure process is performed on a second plurality of the fields in a second scan direction; storing scan direction information for the first plurality of fields and the second plurality of fields corresponding to whether the exposure process is performed in the first scan direction or in the second scan direction; obtaining image information on the surface of the wafer subjected to the exposure process; determining whether a repetitive defect pattern is present in the image information; and determining whether the repetitive defect pattern is dependent on scan direction by identifying a correlation between the presence of repetitive defect patterns on the wafer and the scan direction information.
摘要翻译：晶片检查方法包括：对分割成场的晶片执行曝光处理，其中对第一扫描方向上的第一多个场执行曝光处理，并且其中对第二多个场执行曝光处理第二扫描方向; 存储对应于在第一扫描方向或第二扫描方向上是否进行曝光处理的第一多个场和第二多个场的扫描方向信息; 获得经过曝光处理的晶片表面上的图像信息; 确定所述图像信息中是否存在重复缺陷图案; 以及通过识别晶片上的重复缺陷图案的存在与扫描方向信息之间的相关性来确定重复缺陷图案是否依赖于扫描方向。

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