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1. 发明授权

US08007166B2 Method for optimizing direct wafer bond line width for reduction of parasitic capacitance in MEMS accelerometers 有权
标题翻译：用于优化直接晶片接合线宽度以减少MEMS加速度计中的寄生电容的方法
公开(公告)号：US08007166B2
公开(公告)日：2011-08-30
申请号：US11914932
申请日：2006-05-24
申请人： Henry C. Abbink , Gabriel M. Kuhn , Howard Ge , Daryl Sakaida
发明人： Henry C. Abbink , Gabriel M. Kuhn , Howard Ge , Daryl Sakaida
IPC分类号： G01N25/06 , G01N25/14
CPC分类号： G01P15/0802 , B81C3/008 , G01P1/023 , G01P15/125 , G01P21/00 , G01P2015/0828
摘要： A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.
摘要翻译：一种用于通过减小第一和第二晶片之间的接合线的宽度来优化直接晶片接合线宽度以降低MEMS器件中的寄生电容的方法，将MEMS器件暴露于水蒸气预定时间段第一温度能够蒸发水，在能够冷冻水的第二温度下冷却MEMS器件，以及在能够冷冻水的第三温度下操作MEMS器件，以确定在操作期间是否存在不连续性。

2. 发明授权

US08579502B2 Method for determining leak rate through a bond line of a MEMS device 有权
标题翻译：用于确定通过MEMS器件的接合线的泄漏速率的方法
公开(公告)号：US08579502B2
公开(公告)日：2013-11-12
申请号：US13185723
申请日：2011-07-19
申请人： Henry C. Abbink , Gabriel M. Kuhn , Howard Ge , Daryl Sakaida
发明人： Henry C. Abbink , Gabriel M. Kuhn , Howard Ge , Daryl Sakaida
IPC分类号： G01N25/06 , G01N25/14
CPC分类号： G01P15/0802 , B81C3/008 , G01P1/023 , G01P15/125 , G01P21/00 , G01P2015/0828
摘要： A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.
摘要翻译：一种用于通过减小第一和第二晶片之间的接合线的宽度来优化直接晶片接合线宽度以降低MEMS器件中的寄生电容的方法，将MEMS器件暴露于水蒸气预定时间段第一温度能够蒸发水，在能够冷冻水的第二温度下冷却MEMS器件，以及在能够冷冻水的第三温度下操作MEMS器件，以确定在操作期间是否存在不连续性。

3. 发明申请

US20110271744A1 METHOD FOR DETERMINING LEAK RATE THROUGH A BOND LINE OF A MEMS DEVICE 有权
标题翻译：用于确定通过MEMS器件的连接线的泄漏速率的方法
公开(公告)号：US20110271744A1
公开(公告)日：2011-11-10
申请号：US13185723
申请日：2011-07-19
申请人： Henry C. Abbink , Gabriel M. Kuhn , Howard Ge , Daryl Sakaida
发明人： Henry C. Abbink , Gabriel M. Kuhn , Howard Ge , Daryl Sakaida
IPC分类号： G01M3/04
CPC分类号： G01P15/0802 , B81C3/008 , G01P1/023 , G01P15/125 , G01P21/00 , G01P2015/0828
摘要： A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.
摘要翻译：一种用于通过减小第一和第二晶片之间的接合线的宽度来优化直接晶片接合线宽度以降低MEMS器件中的寄生电容的方法，将MEMS器件暴露于水蒸气预定时间段第一温度能够蒸发水，在能够冷冻水的第二温度下冷却MEMS器件，以及在能够冷冻水的第三温度下操作MEMS器件，以确定在操作期间是否存在不连续性。

4. 发明申请

US20080184778A1 Method for Optimizing Direct Wafer Bond Line Width for Reduction of Parasitic Capacitance in Mems Accelerometers 有权
标题翻译：用于优化直接晶圆结合线宽度以减少Mems加速度计中寄生电容的方法
公开(公告)号：US20080184778A1
公开(公告)日：2008-08-07
申请号：US11914932
申请日：2006-05-24
申请人： Henry C. Abbink , Gabriel M. Kuln , Howard Ge , Daryl Sakaida
发明人： Henry C. Abbink , Gabriel M. Kuln , Howard Ge , Daryl Sakaida
IPC分类号： G01M3/04
CPC分类号： G01P15/0802 , B81C3/008 , G01P1/023 , G01P15/125 , G01P21/00 , G01P2015/0828
摘要： A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.
摘要翻译：一种用于通过减小第一和第二晶片之间的接合线的宽度来优化直接晶片接合线宽度以降低MEMS器件中的寄生电容的方法，将MEMS器件暴露于水蒸气预定时间段第一温度能够蒸发水，在能够冷冻水的第二温度下冷却MEMS器件，以及在能够冷冻水的第三温度下操作MEMS器件，以确定在操作期间是否存在不连续性。

5. 发明申请

US20110219729A1 Middle layer of die structure that comprises a cavity that holds an alkali metal 有权
标题翻译：包含保持碱金属的空腔的模具结构的中间层
公开(公告)号：US20110219729A1
公开(公告)日：2011-09-15
申请号：US13068608
申请日：2011-05-16
申请人： Henry C. Abbink , William P. Debley , Christine E. Geosling , Daryl K. Sakaida , Robert E. Stewart
发明人： Henry C. Abbink , William P. Debley , Christine E. Geosling , Daryl K. Sakaida , Robert E. Stewart
IPC分类号： B65B1/04
CPC分类号： G04F5/14
摘要： In one implementation, a chamber is selected that accommodates an array of die structures that comprises one or more cavities. An inner chamber of the chamber is maintained at a first temperature. An alkali metal source of the chamber is maintained at a second temperature greater than the first temperature. An outer chamber of the chamber is maintained at a third temperature greater than the first temperature and the second temperature. The one or more cavities of the array of die structures are filled with a portion of the alkali metal source. The one or more cavities of the array of die structures are sealed to comprise the portion of the alkali metal source.
摘要翻译：在一个实施方案中，选择容纳包括一个或多个空腔的管芯结构阵列的腔室。腔室的内腔保持在第一温度。室的碱金属源保持在大于第一温度的第二温度。腔室的外腔保持在大于第一温度和第二温度的第三温度。模具结构阵列的一个或多个空腔被一部分碱金属源填充。模具结构阵列的一个或多个空腔被密封以包括碱金属源的一部分。

6. 发明授权

US07292031B2 Micro-cell for NMR gyroscope 有权
标题翻译：用于NMR陀螺仪的微电池
公开(公告)号：US07292031B2
公开(公告)日：2007-11-06
申请号：US11312310
申请日：2005-12-20
申请人： Henry C. Abbink , Edward Kanegsberg , Kenneth D. Marino , Charles H. Volk
发明人： Henry C. Abbink , Edward Kanegsberg , Kenneth D. Marino , Charles H. Volk
IPC分类号： G01V3/00
CPC分类号： G01C19/62 , G01C19/60 , G01R33/26 , G04F5/14
摘要： A cell in one example comprises an alkali metal and a coating of parylene on an interior surface of the cell. In one implementation, the alkali metal may be an optically pumped gaseous phase of an alkali metal. The parylene coating minimizes interaction of the excited state of the alkali metal, increases lifetime of the excited state, and minimizes interaction of nuclear spin states with the cell walls.
摘要翻译：一个实例中的电池包含碱金属和在电池内表面上的聚对二甲苯涂层。在一个实施方案中，碱金属可以是碱金属的光泵浦气相。聚对二甲苯涂层最小化碱金属的激发态的相互作用，增加激发态的寿命，并使核自旋态与细胞壁的相互作用最小化。

7. 发明授权

US07239135B2 NMR gyroscope 有权
标题翻译： NMR陀螺仪
公开(公告)号：US07239135B2
公开(公告)日：2007-07-03
申请号：US11312311
申请日：2005-12-20
申请人： Henry C. Abbink , Edward Kanegsberg , Ralph A. Patterson
发明人： Henry C. Abbink , Edward Kanegsberg , Ralph A. Patterson
IPC分类号： G01V3/00
CPC分类号： G01R33/26 , G01C19/62
摘要： An NMR gyroscope in one example comprises a support structure affixed within an enclosure, an NMR cell affixed to the support structure, a plurality of permanent magnets disposed about the NMR cell to produce a magnetic field within the cell, and a field coil disposed proximate the cell to produce a modulated magnetic field transverse to the magnetic field produced by the permanent magnets.
摘要翻译：一个实例中的NMR陀螺仪包括固定在外壳内的支撑结构，固定在支撑结构上的NMR单元，围绕NMR单元设置的多个永磁体，以在该单元内产生磁场，以产生横截于由永磁体产生的磁场的调制磁场。

8. 发明授权

US06374672B1 Silicon gyro with integrated driving and sensing structures 有权
标题翻译：具有集成驱动和感应结构的硅陀螺
公开(公告)号：US06374672B1
公开(公告)日：2002-04-23
申请号：US09627549
申请日：2000-07-28
申请人： Henry C. Abbink , Youngmin A. Choi
发明人： Henry C. Abbink , Youngmin A. Choi
IPC分类号： G01P904
CPC分类号： G01C19/5719
摘要： A rotation sensor is formed of three semiconductor wafers. A first wafer comprises a frame that surrounds a paddle. The rotation-sensitive paddle is surrounded on either of the opposed sides of the first wafer by rings of driven elements formed of radially-directed plateaus in the semiconductor material. Second and third wafers sandwich the first wafer. Each of the second and third wafers includes a first surface in which are formed concentric rings of driver and pickoff electrodes. In a preferred embodiment, the rings of pickoff electrodes are split into two semicircular arcs.
摘要翻译：旋转传感器由三个半导体晶片形成。第一晶片包括围绕桨的框架。在半导体材料中通过由径向定向的平台形成的驱动元件的环，旋转敏感桨被第一晶片的任一相对侧包围。第二和第三晶片夹着第一晶片。第二和第三晶片中的每一个包括第一表面，其中形成有驱动器和拾取电极的同心环。在优选实施例中，拾取电极的环被分成两个半圆弧。

9. 发明授权

US6044184A Integrated optics chip with reduced thermal errors due to pyroelectric effects 失效
标题翻译：集成光学芯片，由于热电效应而具有减少的热误差
公开(公告)号：US6044184A
公开(公告)日：2000-03-28
申请号：US123955
申请日：1998-07-28
申请人： Kenneth W. Shafer , Henry C. Abbink , John P. Rahn , Christine E. Geosling , Gregory A. Zimmerman
发明人： Kenneth W. Shafer , Henry C. Abbink , John P. Rahn , Christine E. Geosling , Gregory A. Zimmerman
IPC分类号： H01L33/00 , G02B6/12 , G02B6/30 , G02F1/035 , H01L31/0232
CPC分类号： G02F1/035 , G02F2203/21
摘要： An integrated optics chip with improved performance when exposed to changing temperature is disclosed. The optic chip or integrated optics chip or MIOC has a top surface, a +Z face and -Z face. The integrated optics chip is formed from a crystal substrate having a high electro-optic coefficient such as Lithium Niobate. For the purpose of orienting the components to the optic chip to be described, the +Z crystal axis extends outward from the +Z face, the Z axis being the axis across which a pyroelectric effect is exhibited. The top surface is orthogonal to the Z axis. An input waveguide on the top surface receives an optical signal from an input port, passes the signal via a waveguide network, to an output waveguide coupling the waveguide network to an output port. A portion of the +Z and -Z faces are coated at least partially with a conductive coating. A conductive path couples the +Z and -Z faces to prevent a charge differential from developing between the +Z and -Z faces due to a change in temperature of the optic chip and the pyroelectric effect.
摘要翻译：公开了当暴露于变化的温度时具有改进的性能的集成光学芯片。光学芯片或集成光学芯片或MIOC具有顶面，+ Z面和-Z面。集成光学芯片由具有高电光系数的晶体衬底形成，例如铌酸锂。为了将元件定向到要描述的光学芯片，+ Z晶体轴从+ Z面向外延伸，Z轴是表示热电效应的轴。顶面与Z轴正交。顶表面上的输入波导接收来自输入端口的光信号，将信号经由波导网络传递到将波导网络耦合到输出端口的输出波导。至少部分地用导电涂层涂覆一部分+ Z和-Z面。导电路径耦合+ Z和-Z面，以防止由于光学芯片的温度变化和热电效应而在+ Z和-Z面之间产生电荷差异。

10. 发明授权

US09970999B2 Nuclear magnetic resonance probe system 有权
公开(公告)号：US09970999B2
公开(公告)日：2018-05-15
申请号：US13907293
申请日：2013-05-31
申请人： Michael S. Larsen , Henry C. Abbink , Thad G. Walker , Michael D. Bulatowicz
发明人： Michael S. Larsen , Henry C. Abbink , Thad G. Walker , Michael D. Bulatowicz
IPC分类号： G01R33/26 , G01R33/32 , G01C19/62
CPC分类号： G01R33/26 , G01C19/62 , G01R33/323
摘要： One embodiment includes a nuclear magnetic resonance (NMR) sensor system. The system includes a pump laser configured to generate an optical pump beam at a first wavelength and a probe laser configured to generate an optical probe beam at a second wavelength that is different from the first wavelength. The system also includes beam optics configured to direct the pump laser and the probe laser along orthogonal axes through a sensor cell comprising an alkali metal vapor. The system further includes detection optics that include a photodetector assembly configured to measure at least one characteristic associated with the optical probe beam leaving the sensor cell for measurement of a polarization vector of the alkali metal vapor. The detection optics can include at least one filter configured to filter light having the first wavelength and to pass light having the second wavelength to the photodetector assembly.

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