会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method of adjusting or locally modifying a magnetization in a layer of a magnetoresistive layer system, heat stamp for heating the magnetoresistive layer system, and use of same
    • 调整或局部改变磁阻层系统层中的磁化的方法,用于加热磁阻层系统的热标记及其使用
    • US07033849B2
    • 2006-04-25
    • US10614540
    • 2003-07-07
    • Henrik SiegleAndrew JohnsonUlrich May
    • Henrik SiegleAndrew JohnsonUlrich May
    • H01L21/00
    • G11C11/16B82Y25/00B82Y40/00G01R33/093H01F41/302Y10T29/49034Y10T29/49044
    • A method of adjusting or locally modifying the direction of magnetization of a ferromagnetic layer in a magnetoresistive layer system using a heat stamp is described, the ferromagnetic layer being stabilized over an antiferromagnetic layer. The antiferromagnetic layer is heated, using a heat stamp, over a threshold temperature, above which the influence of this layer on the direction of magnetization of the adjacent ferromagnetic layer disappears; subsequently, the ferromagnetic layer is exposed to an external magnetic field of a predefined direction, and finally the antiferromagnetic layer is cooled again below the threshold temperature. In addition, a heat stamp having a base body and a heatable stamp structure connected to the base body and matching the dimensions of or similar to the magnetoresistive layer system is described. The heat stamp and the method described are suitable in particular for manufacturing a magnetoresistive layer system operating by the spin valve principle, which has a plurality of magnetoresistive layer systems having at least partially different resulting directions of magnetization in the particular layers, the magnetoresistive layer systems being interconnected in the form of a Wheatstone bridge in particular.
    • 描述了使用热压力调整或局部改变磁阻层系统中的铁磁层的磁化方向的方法,铁磁层在反铁磁性层上稳定。 使用加热印模将反铁磁层加热到阈值温度以上,该层对相邻铁磁层的磁化方向的影响消失; 随后,铁磁层暴露于预定方向的外部磁场,最后将反铁磁层再次冷却到阈值温度以下。 此外,描述了具有连接到基体并具有匹配磁阻层系统的尺寸或类似于磁阻层系统的基体和可加热印模结构的热印。 所述热标记和所述方法特别适用于制造通过自旋阀原理操作的磁阻层系统,其具有多个具有至少部分不同的特定层中的磁化方向的磁阻层系统,磁阻层系统 以惠斯通电桥的形式相互联系。
    • 5. 发明申请
    • MAGNETORESISTIVE SENSOR ELEMENT AND METHOD FOR REDUCING THE ANGULAR ERROR OF A MAGNETORESISTIVE SENSOR ELEMENT
    • 用于减小磁传感器元件的角度误差的磁传感器元件和方法
    • US20060152218A1
    • 2006-07-13
    • US10535475
    • 2003-10-09
    • Peter SchmollngruberIngo HerrmannHenrik SiegleHartmut KittelPaul FarberUlrich May
    • Peter SchmollngruberIngo HerrmannHenrik SiegleHartmut KittelPaul FarberUlrich May
    • G01R33/02
    • B82Y25/00G01R33/093
    • A magnetoresistive sensor element is provided, having a magnetoresistive layer system which, in top view, is at least regionally striated. The sensor element operates on the basis of the GMR effect and is constructed according to the spin valve principle, the striated layer system featuring a reference layer having a direction of magnetization substantially uninfluenced by a direction of an outer magnetic field acting on it. During operation, the sensor element provides a measuring signal which changes as a function of a measurement angle between the component of the field strength of the outer magnetic field lying in the plane of the layer system, and the direction of magnetization, and from which this measurement angle is able to be ascertained. In addition, observed in a top view of the striated layer system, the angle between the direction of magnetization in the absence of the outer magnetic field and the longitudinal direction of the striated layer system is set in such a way that in response to an influence of the outer magnetic field having a defined field strength, which is selected from a predefined work interval, the angle error of the layer system, as a function of this angle and the field strength, is minimal.
    • 提供了一种磁阻传感器元件,具有磁阻层系统,其在顶视图中至少是区域性条纹化的。 传感器元件基于GMR效应进行操作,并且根据自旋阀原理构造,具有参考层的条纹层系统具有基本上不受作用在其上的外部磁场的方向的磁化方向的磁化方向。 在操作期间,传感器元件提供测量信号,该测量信号根据位于层系统的平面中的外部磁场的场强的分量与磁化方向之间的测量角度而变化,并且由此 可以确定测量角度。 此外,在条纹层系统的俯视图中观察到,在没有外磁场的磁化方向与条纹层系统的纵向方向之间的角度被设定为响应于影响 具有定义的场强的外部磁场,其从预定义的工作间隔中选择,层系统的角度误差作为该角度和场强的函数是最小的。
    • 7. 发明授权
    • Magnetoresistive sensor element and method for reducing the angular error of a magnetoresistive sensor element
    • 磁阻传感器元件和减小磁阻传感器元件角度误差的方法
    • US07095596B2
    • 2006-08-22
    • US10535475
    • 2003-10-09
    • Peter SchmollngruberIngo HerrmannHenrik SiegleHartmut KittelPaul FarberUlrich May
    • Peter SchmollngruberIngo HerrmannHenrik SiegleHartmut KittelPaul FarberUlrich May
    • G11B5/33G11B5/127
    • B82Y25/00G01R33/093
    • A magnetoresistive sensor element is provided, having a magnetoresistive layer system which, in top view, is at least regionally striated. The sensor element operates on the basis of the GMR effect and is constructed according to the spin valve principle, the striated layer system featuring a reference layer having a direction of magnetization substantially uninfluenced by a direction of an outer magnetic field acting on it. During operation, the sensor element provides a measuring signal which changes as a function of a measurement angle between the component of the field strength of the outer magnetic field lying in the plane of the layer system, and the direction of magnetization, and from which this measurement angle is able to be ascertained. In addition, observed in a top view of the striated layer system, the angle between the direction of magnetization in the absence of the outer magnetic field and the longitudinal direction of the striated layer system is set in such a way that in response to an influence of the outer magnetic field having a defined field strength, which is selected from a predefined work interval, the angle error of the layer system, as a function of this angle and the field strength, is minimal.
    • 提供了一种磁阻传感器元件,具有磁阻层系统,其在顶视图中至少是区域性条纹化的。 传感器元件基于GMR效应进行操作,并且根据自旋阀原理构造,具有参考层的条纹层系统具有基本上不受作用在其上的外部磁场的方向的磁化方向的磁化方向。 在操作期间,传感器元件提供测量信号,该测量信号根据位于层系统的平面中的外部磁场的场强的分量与磁化方向之间的测量角度而变化,并且由此 可以确定测量角度。 此外,在条纹层系统的俯视图中观察到,在没有外磁场的磁化方向与条纹层系统的纵向方向之间的角度被设定为响应于影响 具有定义的场强的外部磁场,其从预定义的工作间隔中选择,层系统的角度误差作为该角度和场强的函数是最小的。