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1. 发明授权

US07332393B2 Method of fabricating a cylindrical capacitor 有权
标题翻译：制造圆柱形电容器的方法
公开(公告)号：US07332393B2
公开(公告)日：2008-02-19
申请号：US11308680
申请日：2006-04-21
申请人： Heng-Yuan Lee , Ching-Yuan Ho , Lurng-Shehng Lee , Chieh-Shuo Liang
发明人： Heng-Yuan Lee , Ching-Yuan Ho , Lurng-Shehng Lee , Chieh-Shuo Liang
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/8242 , H01L21/20
CPC分类号： H01L28/40
摘要： A cylindrical capacitor comprising at least a substrate, a cylindrical bottom electrode, a structure layer, a top electrode and a capacitor dielectric layer is provided. The substrate has several plugs. The cylindrical bottom electrodes are disposed on the substrate and electrically connected to the respective plugs. The structure layer surrounds the periphery of each cylindrical bottom electrode. The structure layers that surround the two opposing cylindrical bottom electrodes have no mutual contact while the structure layers that surround two neighboring cylindrical bottom electrodes contact each other. Furthermore, the top electrodes cover the respective cylindrical bottom electrodes and the capacitor dielectric layer is disposed between each top electrode and corresponding cylindrical bottom electrode. Due to the structure layers, the mechanical strength of the whole cylindrical capacitor is improved and the density of the capacitor can be increased.
摘要翻译：提供了至少包括基板，圆柱形底电极，结构层，顶电极和电容器介电层的圆柱形电容器。基板有几个插头。圆柱形底部电极设置在基板上并电连接到相应的插头。结构层围绕每个圆柱形底部电极的周边。围绕两个相对的圆柱形底部电极的结构层不会相互接触，而围绕两个相邻的圆柱形底部电极的结构层彼此接触。此外，顶部电极覆盖相应的圆柱形底部电极，并且电容器介电层设置在每个顶部电极和相应的圆柱形底部电极之间。由于结构层，提高了整个圆柱形电容器的机械强度，并且可以增加电容器的密度。

2. 发明申请

US20080094776A1 CYLINDRICAL CAPACITOR 审中-公开
标题翻译：圆柱电容器
公开(公告)号：US20080094776A1
公开(公告)日：2008-04-24
申请号：US11960726
申请日：2007-12-20
申请人： Heng-Yuan Lee , Ching-Yuan Ho , Lurng-Shehng Lee , Chieh-Shuo Liang
发明人： Heng-Yuan Lee , Ching-Yuan Ho , Lurng-Shehng Lee , Chieh-Shuo Liang
IPC分类号： H01G4/00
CPC分类号： H01L28/40
摘要： A cylindrical capacitor comprising at least a substrate, a cylindrical bottom electrode, a structure layer, a top electrode and a capacitor dielectric layer is provided. The substrate has several plugs. The cylindrical bottom electrodes are disposed on the substrate and electrically connected to the respective plugs. The structure layer surrounds the periphery of each cylindrical bottom electrode. The structure layers that surround the two opposing cylindrical bottom electrodes have no mutual contact while the structure layers that surround two neighboring cylindrical bottom electrodes contact each other. Furthermore, the top electrodes cover the respective cylindrical bottom electrodes and the capacitor dielectric layer is disposed between each top electrode and corresponding cylindrical bottom electrode. Due to the structure layers, the mechanical strength of the whole cylindrical capacitor is improved and the density of the capacitor can be increased.
摘要翻译：提供了至少包括基板，圆柱形底电极，结构层，顶电极和电容器介电层的圆柱形电容器。基板有几个插头。圆柱形底部电极设置在基板上并电连接到相应的插头。结构层围绕每个圆柱形底部电极的周边。围绕两个相对的圆柱形底部电极的结构层不会相互接触，而围绕两个相邻的圆柱形底部电极的结构层彼此接触。此外，顶部电极覆盖相应的圆柱形底部电极，并且电容器介电层设置在每个顶部电极和相应的圆柱形底部电极之间。由于结构层，提高了整个圆柱形电容器的机械强度，并且可以增加电容器的密度。

3. 发明申请

US20070161178A1 CYLINDRICAL CAPACITOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：圆柱形电容器及其制造方法
公开(公告)号：US20070161178A1
公开(公告)日：2007-07-12
申请号：US11308680
申请日：2006-04-21
申请人： Heng-Yuan Lee , Ching-Yuan Ho , Lurng-Shehng Lee , Chieh-Shuo Liang
发明人： Heng-Yuan Lee , Ching-Yuan Ho , Lurng-Shehng Lee , Chieh-Shuo Liang
IPC分类号： H01L21/8242
CPC分类号： H01L28/40
摘要： A cylindrical capacitor comprising at least a substrate, a cylindrical bottom electrode, a structure layer, a top electrode and a capacitor dielectric layer is provided. The substrate has several plugs. The cylindrical bottom electrodes are disposed on the substrate and electrically connected to the respective plugs. The structure layer surrounds the periphery of each cylindrical bottom electrode. The structure layers that surround the two opposing cylindrical bottom electrodes have no mutual contact while the structure layers that surround two neighboring cylindrical bottom electrodes contact each other. Furthermore, the top electrodes cover the respective cylindrical bottom electrodes and the capacitor dielectric layer is disposed between each top electrode and corresponding cylindrical bottom electrode. Due to the structure layers, the mechanical strength of the whole cylindrical capacitor is improved and the density of the capacitor can be increased.
摘要翻译：提供了至少包括基板，圆柱形底电极，结构层，顶电极和电容器介电层的圆柱形电容器。基板有几个插头。圆柱形底部电极设置在基板上并电连接到相应的插头。结构层围绕每个圆柱形底部电极的周边。围绕两个相对的圆柱形底部电极的结构层不会相互接触，而围绕两个相邻的圆柱形底部电极的结构层彼此接触。此外，顶部电极覆盖相应的圆柱形底部电极，并且电容器介电层设置在每个顶部电极和相应的圆柱形底部电极之间。由于结构层，提高了整个圆柱形电容器的机械强度，并且可以增加电容器的密度。

4. 发明申请

US20070161185A1 Method of manufacturing charge storage device 失效
标题翻译：制造电荷存储装置的方法
公开(公告)号：US20070161185A1
公开(公告)日：2007-07-12
申请号：US11407440
申请日：2006-04-19
申请人： Chieh-Shuo Liang , Pei-Jer Tzeng , Heng-Yuan Lee , Lurng-Shehng Lee
发明人： Chieh-Shuo Liang , Pei-Jer Tzeng , Heng-Yuan Lee , Lurng-Shehng Lee
IPC分类号： H01L21/336
CPC分类号： H01L21/02148 , H01L21/02159 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L21/31111 , H01L21/3142 , H01L21/31625 , H01L27/10852 , H01L28/84
摘要： A method of manufacturing a charge storage device is provided. Utilizing the capacity for a precise control of the thickness and the silicon content of a deposited film in an atomic layer deposition process, a stacked gradual material layer such as a hafnium silicon oxide (HfxSiyOz) layer is formed. The silicon content is gradually changed throughout the duration of the HfxSiyOz deposition process. The etching rate for the HfxSiyOz layer in dilute hydrogen fluoride solution is dependent on the silicon content y in the HfxSiyOz layer. The sidewalls of the stacked gradual material layer are etched to form an uneven profile. The lower electrode, the capacitor dielectric layer and the upper electrode are formed on the uneven sidewalls of the stacked gradual material layers, the area between the lower electrode and the upper electrode is increased to improve the capacitance of the charge storage device.
摘要翻译：提供一种制造电荷存储装置的方法。利用在原子层沉积工艺中精确控制沉积膜的厚度和硅含量的能力，可以使用叠层的梯度材料层，例如氧化铪铪（Hf x Si x Si 形成层）。在整个沉积过程的整个持续时间内，硅含量逐渐变化。稀氟化氢溶液中的Hf x Si 3 O z O z层的蚀刻速率取决于Hf x _{Si O z层。层叠的逐层材料层的侧壁被蚀刻以形成不均匀的轮廓。下部电极，电容器电介质层和上部电极形成在层叠的逐层材料层的不均匀侧壁上，增加了下部电极和上部电极之间的面积，以提高电荷存储装置的电容。}

5. 发明授权

US07851843B2 DRAM cylindrical capacitor 有权
标题翻译： DRAM圆柱形电容器
公开(公告)号：US07851843B2
公开(公告)日：2010-12-14
申请号：US12248041
申请日：2008-10-08
申请人： Heng-Yuan Lee , Chieh-Shuo Liang , Lurng-Shehng Lee
发明人： Heng-Yuan Lee , Chieh-Shuo Liang , Lurng-Shehng Lee
IPC分类号： H01L27/108
CPC分类号： H01L27/10852 , H01L28/82
摘要： A structure of a DRAM cylindrical capacitor includes a substrate, a dielectric layer, an amorphous silicon spacer, a polysilicon plug, a HSG layer, a conductive layer and a capacitor dielectric layer. The dielectric layer is disposed on the substrate and includes an opening. The amorphous silicon spacer is disposed on the sidewall of the opening, wherein the polysilicon plug is exposed by the opening. The polysilicon plug includes a notch, and the internal surface of the notch is at the same plane as the internal surface of the amorphous silicon spacer. The HSG layer is disposed on the surface of the amorphous silicon spacer. Furthermore, the conductive layer is disposed on the HSG layer and the capacitor dielectric layer is disposed between the HSG layer and the conductive layer.
摘要翻译： DRAM圆柱形电容器的结构包括基板，电介质层，非晶硅间隔物，多晶硅插塞，HSG层，导电层和电容器电介质层。电介质层设置在基板上并且包括开口。非晶硅间隔件设置在开口的侧壁上，其中多晶硅插塞由开口暴露。多晶硅插塞包括凹口，并且凹口的内表面处于与非晶硅间隔物的内表面相同的平面。 HSG层设置在非晶硅间隔物的表面上。此外，导电层设置在HSG层上，电容器介电层设置在HSG层和导电层之间。

6. 发明申请

US20090026518A1 DRAM CYLINDRICAL CAPACITOR 有权
标题翻译： DRAM圆柱电容器
公开(公告)号：US20090026518A1
公开(公告)日：2009-01-29
申请号：US12248041
申请日：2008-10-08
申请人： Heng-Yuan Lee , Chieh-Shuo Liang , Lurng-Shehng Lee
发明人： Heng-Yuan Lee , Chieh-Shuo Liang , Lurng-Shehng Lee
IPC分类号： H01L27/108 , H01L29/92
CPC分类号： H01L27/10852 , H01L28/82
摘要： A structure of a DRAM cylindrical capacitor includes a substrate, a dielectric layer, an amorphous silicon spacer, a polysilicon plug, a HSG layer, a conductive layer and a capacitor dielectric layer. The dielectric layer is disposed on the substrate and includes an opening. The amorphous silicon spacer is disposed on the sidewall of the opening, wherein the polysilicon plug is exposed by the opening. The polysilicon plug includes a notch, and the internal surface of the notch is at the same plane as the internal surface of the amorphous silicon spacer. The HSG layer is disposed on the surface of the amorphous silicon spacer. Furthermore, the conductive layer is disposed on the HSG layer and the capacitor dielectric layer is disposed between the HSG layer and the conductive layer.
摘要翻译： DRAM圆柱形电容器的结构包括基板，电介质层，非晶硅间隔物，多晶硅插塞，HSG层，导电层和电容器电介质层。电介质层设置在基板上并且包括开口。非晶硅间隔件设置在开口的侧壁上，其中多晶硅插塞由开口暴露。多晶硅插塞包括凹口，并且凹口的内表面处于与非晶硅间隔物的内表面相同的平面。 HSG层设置在非晶硅间隔物的表面上。此外，导电层设置在HSG层上，电容器介电层设置在HSG层和导电层之间。

7. 发明授权

US07456065B2 Fabricating method of DRAM cylindrical capacitor 失效
标题翻译： DRAM圆柱形电容器的制造方法
公开(公告)号：US07456065B2
公开(公告)日：2008-11-25
申请号：US11308804
申请日：2006-05-09
申请人： Heng-Yuan Lee , Chieh-Shuo Liang , Lurng-Shehng Lee
发明人： Heng-Yuan Lee , Chieh-Shuo Liang , Lurng-Shehng Lee
IPC分类号： H01L21/8242
CPC分类号： H01L27/10852 , H01L28/82
摘要： A method of manufacturing dynamic random access memory (DRAM) cylindrical capacitor is provided. A substrate having a polysilicon plug formed therein is provided. A dielectric layer having an opening is disposed on the substrate, wherein the opening exposes the polysilicon plug. Thereafter, an amorphous silicon spacer is formed on the sidewall of the opening to expose a portion of the polysilicon plug. Next, a top portion of the exposed polysilicon plug is removed and a seeding method is used to grow a hemispherical silicon grain (HSG) layer on a surface of the amorphous silicon spacer. A capacitor dielectric layer is formed on the surface of the HSG layer and a conductive layer is then formed on the capacitor dielectric layer. As no HSG is formed on the polysilicon plug, and therefore the contact area of the capacitor is not decreased.
摘要翻译：提供了一种制造动态随机存取存储器（DRAM）圆柱形电容器的方法。提供了其中形成有多晶硅塞的基板。具有开口的电介质层设置在基板上，其中开口露出多晶硅插塞。此后，在开口的侧壁上形成非晶硅隔离物以暴露多晶硅插塞的一部分。接下来，去除暴露的多晶硅插塞的顶部，并且使用接种方法来在非晶硅间隔物的表面上生长半球形硅晶粒（HSG）层。在HSG层的表面上形成电容器电介质层，然后在电容器电介质层上形成导电层。由于在多晶硅插塞上没有形成HSG，因此电容器的接触面积不降低。

8. 发明授权

US07405166B2 Method of manufacturing charge storage device 失效
标题翻译：制造电荷存储装置的方法
公开(公告)号：US07405166B2
公开(公告)日：2008-07-29
申请号：US11407440
申请日：2006-04-19
申请人： Chieh-Shuo Liang , Pei-Jer Tzeng , Heng-Yuan Lee , Lurng-Shehng Lee
发明人： Chieh-Shuo Liang , Pei-Jer Tzeng , Heng-Yuan Lee , Lurng-Shehng Lee
IPC分类号： H01L21/31 , H01L29/792
CPC分类号： H01L21/02148 , H01L21/02159 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L21/31111 , H01L21/3142 , H01L21/31625 , H01L27/10852 , H01L28/84
摘要： A method of manufacturing a charge storage device is provided. Utilizing the capacity for a precise control of the thickness and the silicon content of a deposited film in an atomic layer deposition process, a stacked gradual material layer such as a hafnium silicon oxide (HfxSiyOz) layer is formed. The silicon content is gradually changed throughout the duration of the HfxSiyOz deposition process. The etching rate for the HfxSiyOz layer in dilute hydrogen fluoride solution is dependent on the silicon content y in the HfxSiyOz layer. The sidewalls of the stacked gradual material layer are etched to form an uneven profile. The lower electrode, the capacitor dielectric layer and the upper electrode are formed on the uneven sidewalls of the stacked gradual material layers, the area between the lower electrode and the upper electrode is increased to improve the capacitance of the charge storage device.
摘要翻译：提供一种制造电荷存储装置的方法。利用在原子层沉积工艺中精确控制沉积膜的厚度和硅含量的能力，可以使用叠层的梯度材料层，例如氧化铪铪（Hf x Si x Si 形成层）。在整个沉积过程的整个持续时间内，硅含量逐渐变化。稀氟化氢溶液中的Hf x Si 3 O z O z层的蚀刻速率取决于Hf x _{Si O z层。层叠的逐层材料层的侧壁被蚀刻以形成不均匀的轮廓。下部电极，电容器电介质层和上部电极形成在层叠的逐层材料层的不均匀侧壁上，增加了下部电极和上部电极之间的面积，以提高电荷存储装置的电容。}

9. 发明申请

US20070134873A1 DRAM CYLINDRICAL CAPACITOR AND METHOD OF FABRICATING THE SAME 失效
标题翻译： DRAM圆柱形电容器及其制造方法
公开(公告)号：US20070134873A1
公开(公告)日：2007-06-14
申请号：US11308804
申请日：2006-05-09
申请人： Heng-Yuan Lee , Chieh-Shuo Liang , Lurng-Shehng Lee
发明人： Heng-Yuan Lee , Chieh-Shuo Liang , Lurng-Shehng Lee
IPC分类号： H01L21/8242
CPC分类号： H01L27/10852 , H01L28/82
摘要： A method of manufacturing dynamic random access memory (DRAM) cylindrical capacitor is provided. A substrate having a polysilicon plug formed therein is provided. A dielectric layer having an opening is disposed on the substrate, wherein the opening exposes the polysilicon plug. Thereafter, an amorphous silicon spacer is formed on the sidewall of the opening to expose a portion of the polysilicon plug. Next, a top portion of the exposed polysilicon plug is removed and a seeding method is used to grow a hemispherical silicon grain (HSG) layer on a surface of the amorphous silicon spacer. A capacitor dielectric layer is formed on the surface of the HSG layer and a conductive layer is then formed on the capacitor dielectric layer. As no HSG is formed on the polysilicon plug, and therefore the contact area of the capacitor is not decreased.
摘要翻译：提供了一种制造动态随机存取存储器（DRAM）圆柱形电容器的方法。提供了其中形成有多晶硅塞的基板。具有开口的电介质层设置在基板上，其中开口露出多晶硅插塞。此后，在开口的侧壁上形成非晶硅隔离物以暴露多晶硅插塞的一部分。接下来，去除暴露的多晶硅插塞的顶部，并且使用接种方法来在非晶硅间隔物的表面上生长半球形硅晶粒（HSG）层。在HSG层的表面上形成电容器电介质层，然后在电容器电介质层上形成导电层。由于在多晶硅插塞上没有形成HSG，因此电容器的接触面积不降低。

10. 发明授权

US07408170B2 Ultraviolet detector 失效
标题翻译：紫外检测器
公开(公告)号：US07408170B2
公开(公告)日：2008-08-05
申请号：US11308373
申请日：2006-03-20
申请人： Cha-Hsin Lin , Lurng-Shehng Lee
发明人： Cha-Hsin Lin , Lurng-Shehng Lee
IPC分类号： G01J1/42
CPC分类号： G01J1/429
摘要： An ultraviolet detector (UV-detector) including a substrate, a first electrode, and a second electrode is provided. The UV-detector substrate comprises an active region for absorbing ultraviolet light and generating charges. The first electrode is electrically connected to the active region and has a plurality of first tips. Additionally, the second electrode is electrically connected to the active region and has a plurality of second tips. The second electrode is electrically insulated from the first electrode. The first and second tips facilitate the conduction of the charge generated by the photoelectric effect, and the sensitivity of the UV-detector is thus enhanced.
摘要翻译：提供了包括基板，第一电极和第二电极的紫外检测器（UV检测器）。 UV检测器基板包括用于吸收紫外光并产生电荷的有源区域。第一电极电连接到有源区并且具有多个第一尖端。另外，第二电极电连接到有源区，并具有多个第二尖端。第二电极与第一电极电绝缘。第一和第二尖端促进由光电效应产生的电荷的传导，因此增强了UV检测器的灵敏度。

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