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1. 发明授权

US07186661B2 Method to improve profile control and N/P loading in dual doped gate applications 失效
标题翻译：在双掺杂栅极应用中改进轮廓控制和N / P加载的方法
公开(公告)号：US07186661B2
公开(公告)日：2007-03-06
申请号：US10607612
申请日：2003-06-27
申请人： Helene Del Puppo , Frank Lin , Chris Lee , Vahid Vahedi , Thomas A. Kamp , Alan J. Miller , Saurabh Ullal , Harmeet Singh
发明人： Helene Del Puppo , Frank Lin , Chris Lee , Vahid Vahedi , Thomas A. Kamp , Alan J. Miller , Saurabh Ullal , Harmeet Singh
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L21/28035 , H01L21/28044 , H01L21/32137 , H01L21/823842 , H01L29/7833
摘要： A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.
摘要翻译：提供了一种在等离子体蚀刻室中蚀刻多晶硅栅极结构的方法。该方法开始于限定保护待蚀刻的多晶硅膜的图案。然后，产生等离子体。接下来，蚀刻大部分未被保护的多晶硅膜。然后，引入含硅气体，并且在引入含硅气体的同时蚀刻剩余的多晶硅膜。还提供了一种被配置为在蚀刻工艺期间引入含硅气体的蚀刻室。

2. 发明授权

US07682980B2 Method to improve profile control and N/P loading in dual doped gate applications 有权
标题翻译：在双掺杂栅极应用中改进轮廓控制和N / P加载的方法
公开(公告)号：US07682980B2
公开(公告)日：2010-03-23
申请号：US11627016
申请日：2007-01-25
申请人： Helene Del Puppo , Frank Lin , Chris Lee , Vahid Vahedi , Thomas A. Kamp , Alan J. Miller , Saurabh Ullal , Harmeet Singh
发明人： Helene Del Puppo , Frank Lin , Chris Lee , Vahid Vahedi , Thomas A. Kamp , Alan J. Miller , Saurabh Ullal , Harmeet Singh
IPC分类号： H01L21/302
CPC分类号： H01L21/32137
摘要： A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.
摘要翻译：提供了一种在等离子体蚀刻室中蚀刻多晶硅栅极结构的方法。该方法开始于限定保护待蚀刻的多晶硅膜的图案。然后，产生等离子体。接下来，蚀刻大部分未被保护的多晶硅膜。然后，引入含硅气体，并且在引入含硅气体的同时蚀刻剩余的多晶硅膜。还提供了一种被配置为在蚀刻工艺期间引入含硅气体的蚀刻室。

3. 发明申请

US20070117399A1 METHOD TO IMPROVE PROFILE CONTROL AND N/P LOADING IN DUAL DOPED GATE APPLICATIONS 有权
标题翻译：改进双层门控应用中的配置文件控制和N / P加载的方法
公开(公告)号：US20070117399A1
公开(公告)日：2007-05-24
申请号：US11627016
申请日：2007-01-25
申请人： Helene Del Puppo , Frank Lin , Chris Lee , Vahid Vahedi , Thomas Kamp , Alan Miller , Saurabh Ullal , Harmeet Singh
发明人： Helene Del Puppo , Frank Lin , Chris Lee , Vahid Vahedi , Thomas Kamp , Alan Miller , Saurabh Ullal , Harmeet Singh
IPC分类号： H01L21/8242 , H01L21/302
CPC分类号： H01L21/32137
摘要： A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.
摘要翻译：提供了一种在等离子体蚀刻室中蚀刻多晶硅栅极结构的方法。该方法开始于限定保护待蚀刻的多晶硅膜的图案。然后，产生等离子体。接下来，蚀刻大部分未被保护的多晶硅膜。然后，引入含硅气体，并且在引入含硅气体的同时蚀刻剩余的多晶硅膜。还提供了一种被配置为在蚀刻工艺期间引入含硅气体的蚀刻室。

4. 发明申请

US20070119545A1 METHOD TO IMPROVE PROFILE CONTROL AND N/P LOADING IN DUAL DOPED GATE APPLICATIONS 审中-公开
标题翻译：改进双层门控应用中的配置文件控制和N / P加载的方法
公开(公告)号：US20070119545A1
公开(公告)日：2007-05-31
申请号：US11627025
申请日：2007-01-25
申请人： Helene Del Puppo , Frank Lin , Chris Lee , Vahid Vahedi , Thomas Kamp , Alan Miller , Saurabh Ullal , Harmeet Singh
发明人： Helene Del Puppo , Frank Lin , Chris Lee , Vahid Vahedi , Thomas Kamp , Alan Miller , Saurabh Ullal , Harmeet Singh
IPC分类号： H01L21/306
CPC分类号： H01L21/32137
摘要： A semiconductor processing system is provided. The semiconductor processing system includes a chamber. The chamber includes a gas inlet, a top electrode configured to strike a plasma inside the chamber, and a support for holding a substrate. A controller configured to detect a passivation starved condition during an etching operation is provided. The controller is further configured to introduce a passivation enhancing gas through the gas inlet during the etching operation in response to detecting the passivation starved condition.
摘要翻译：提供半导体处理系统。半导体处理系统包括腔室。腔室包括气体入口，构造成撞击室内的等离子体的顶部电极和用于保持衬底的支撑件。提供了一种被配置为在蚀刻操作期间检测钝化不足状态的控制器。控制器还被配置为响应于检测到钝化不足状况而在蚀刻操作期间通过气体入口引入钝化增强气体。

5. 发明授权

US09330926B2 Fabrication of a silicon structure and deep silicon etch with profile control 有权
标题翻译：通过轮廓控制制造硅结构和深度硅蚀刻
公开(公告)号：US09330926B2
公开(公告)日：2016-05-03
申请号：US12338950
申请日：2008-12-18
申请人： Robert Chebi , Frank Lin , Jaroslaw W. Winniczek , Wan-Lin Chen , Erin McDonnell , Lily Zheng , Stephan Lassig , Jeff Bogart , Camelia Rusu
发明人： Robert Chebi , Frank Lin , Jaroslaw W. Winniczek , Wan-Lin Chen , Erin McDonnell , Lily Zheng , Stephan Lassig , Jeff Bogart , Camelia Rusu
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/3244 , H01J37/32449 , H01J2237/334 , H01L21/02057 , H01L21/30655 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137
摘要： A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
摘要翻译：提供了将特征蚀刻成具有稳态气流的硅层的方法。提供了包含含氧气体和含氟气体的蚀刻气体。从蚀刻气体提供等离子体。然后，停止蚀刻气体的流动。

6. 发明申请

US20150367049A1 IMPLANTABLE BLOOD PUMP WITH INTEGRATED CONTROLLER 有权
标题翻译：具有集成控制器的可植入血液泵
公开(公告)号：US20150367049A1
公开(公告)日：2015-12-24
申请号：US14308177
申请日：2014-06-18
申请人： Keming Chen , Chen Chen , Frank Lin
发明人： Keming Chen , Chen Chen , Frank Lin
IPC分类号： A61M1/12 , A61M1/10
CPC分类号： A61M1/122 , A61M1/101 , A61M1/1015 , A61M1/1031 , A61M1/1086 , A61M1/127
摘要： An implantable blood pump includes motor control circuitry and power electronics circuitry integrated within the implantable pump body. The motor control circuitry and power electronics circuitry is configured to energize and control motor windings to rotate the pump rotor and impeller. Additional control circuitry and power electronics circuitry may be integrated within the pump housing to energize and control magnetic bearings of a magnetic levitation pump. A percutaneous cable coupled between the implantable blood pump and an extracorporeal monitor includes a reduced number of leads to provide power and control signals to the implantable blood pump. Wireless communication between the extracorporeal monitor and the integrated power electronics and control circuitry facilitates the use of a percutaneous cable with as few as two leads for providing power to the implantable pump.
摘要翻译：可植入血液泵包括集成在可植入泵体内的马达控制电路和电力电子电路。电动机控制电路和电力电子电路被配置为激励和控制电动机绕组以使泵转子和叶轮旋转。附加的控制电路和电力电子电路可以集成在泵壳体内以激励和控制磁悬浮泵的磁轴承。耦合在可植入血液泵和体外监测器之间的经皮电缆包括减少数量的引线以向可植入血液泵提供功率和控制信号。体外监测器和集成电力电子和控制电路之间的无线通信有助于使用具有少至两个引线的经皮电缆，以向可植入泵提供电力。

7. 发明授权

US09176964B1 Scalable deduplication system and method 有权
标题翻译：可重复数据删除系统和方法
公开(公告)号：US09176964B1
公开(公告)日：2015-11-03
申请号：US12543494
申请日：2009-08-18
申请人： Shawn McCreight , Frank Lin , Prateek Arora , Kunjan Zaveri , Jason Fredrickson
发明人： Shawn McCreight , Frank Lin , Prateek Arora , Kunjan Zaveri , Jason Fredrickson
IPC分类号： G06F17/30
CPC分类号： G06F17/30371 , G06F17/30067 , G06F17/30097 , G06F17/30156 , G06F17/30507 , G06F17/30595
摘要： A system and method for data deduplication includes a first computer device that determines duplicacy of a data item. If the data item is not a duplicate, the first computer device transmits a request to add an entry for the data item in a deduplication table of a deduplication database. The database adds the entry for the data item while enforcing uniqueness of data across one or more data fields of the deduplication table, where, in enforcing the uniqueness, the database denies an attempt by the second device to add an entry in the deduplication table for the same data item.
摘要翻译：用于重复数据删除的系统和方法包括确定数据项的重复性的第一计算机设备。如果数据项不是重复的，则第一计算机设备在重复数据删除数据库的重复数据删除表中发送用于为数据项添加条目的请求。数据库添加数据项的条目，同时在重复数据删除表的一个或多个数据字段上实现数据的唯一性，其中，在强制执行唯一性时，数据库拒绝第二个设备尝试在重复数据删除表中添加一个条目，相同的数据项。

8. 发明授权

US08598751B2 Generator with integrated blower 失效
标题翻译：集成风机发电机
公开(公告)号：US08598751B2
公开(公告)日：2013-12-03
申请号：US13103786
申请日：2011-05-09
申请人： Frank Lin
发明人： Frank Lin
IPC分类号： H02K9/00
CPC分类号： H02K9/06
摘要： An air-cooled generator may be provided with a centrifugal blower configured for rotation on a shaft of the generator. The centrifugal blower may have an axially oriented outlet. An impeller of the blower may have blades with trailing edges oriented at an angle between 80° to about 90° relative to an axis of the shaft of the generator.
摘要翻译：风冷发电机可以设置有离心鼓风机，其被配置为在发电机的轴上旋转。离心式鼓风机可以具有轴向定向的出口。鼓风机的叶轮可以具有叶片，叶片的后缘相对于发生器的轴的轴线定位在80°至约90°之间的角度。

9. 发明申请

US20070033522A1 System and method for dynamic resizing of web-based GUIs 审中-公开
标题翻译：基于Web的GUI动态调整大小的系统和方法
公开(公告)号：US20070033522A1
公开(公告)日：2007-02-08
申请号：US11398138
申请日：2006-04-04
申请人： Frank Lin , Rachel Nguyen
发明人： Frank Lin , Rachel Nguyen
IPC分类号： G06F17/00
CPC分类号： G06F9/451 , H04N21/4622
摘要： A HTML file defining a GUI is created and GUI elements defined therein for a default screen resolution can be reconfigured as appropriate when the GUI senses a new screen resolution.
摘要翻译：创建定义GUI的HTML文件，并且当GUI感测到新的屏幕分辨率时，可以适当地重新配置用于默认屏幕分辨率的GUI元素。

10. 发明申请

US20060187890A1 LCD display on wireless router 有权
公开(公告)号：US20060187890A1
公开(公告)日：2006-08-24
申请号：US11046625
申请日：2005-01-30
申请人： Frank Lin
发明人： Frank Lin
IPC分类号： H04M11/00
CPC分类号： H04W88/02 , H04W88/08 , H04W88/14
摘要： A device, such as an access point or router, in a wireless network includes a user-readable visual display that displays information about the network, such as the number of users, the identities of the users, the type of WAN connection, the channel, and other network information.

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