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    • 2. 发明申请
    • NONVOLATILE MEMORY DEVICE USING INTERLEAVING TECHNOLOGY AND PROGRAMMMING METHOD THEREOF
    • 使用交互技术的非易失性存储器件及其编程方法
    • US20110216590A1
    • 2011-09-08
    • US13040626
    • 2011-03-04
    • Hee Seok EUNYong June KIM
    • Hee Seok EUNYong June KIM
    • G11C16/10
    • G11C16/10
    • A nonvolatile memory device using interleaving technology is provided. The nonvolatile memory device includes a first controller configured to allocate one of 2N threshold voltage states to N-bit data where N is 2 or a natural number greater than 2, a second controller configured to set a difference between adjacent threshold voltage states among the 2N threshold voltage states so that the difference increases as a threshold voltage increases, and a programming unit configured to form a threshold voltage distribution state corresponding to the allocated threshold voltage state and to program the N-bit data to a multi-level cell. The second controller controls the difference between the adjacent threshold voltage states to equalize the number of read errors for all intersections among the 2N threshold voltage states at the end of life.
    • 提供了一种使用交错技术的非易失性存储器件。 非易失性存储器件包括:第一控制器,被配置为将2N个阈值电压状态中的一个分配给N为2或大于2的自然数的N位数据;第二控制器,被配置为将2N的阈值电压状态之间的差设定为2N 阈值电压状态使得差异随阈值电压增加而增加,并且编程单元被配置为形成与所分配的阈值电压状态相对应的阈值电压分布状态,并将N位数据编程到多电平单元。 第二控制器控制相邻阈值电压状态之间的差异,以平衡在寿命结束时的2N个阈值电压状态之间的所有交点的读取误差的数量。