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1. 发明申请

US20100287447A1 MEMORY SYSTEM IDENTIFYING AND CORRECTING ERASURE USING REPEATED APPLICATION OF READ OPERATION 审中-公开
标题翻译：使用重复读取操作的存储系统识别和校正擦除
公开(公告)号：US20100287447A1
公开(公告)日：2010-11-11
申请号：US12773179
申请日：2010-05-04
申请人： Hee Seok EUN , Jae Hong KIM , Seung-Hwan SONG , Ho-Chul LEE , Yong June KIM , Han Woong YOO , Jun Jin KONG
发明人： Hee Seok EUN , Jae Hong KIM , Seung-Hwan SONG , Ho-Chul LEE , Yong June KIM , Han Woong YOO , Jun Jin KONG
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： H03M13/455 , G06F11/1068 , G11C16/26
摘要： Provided is a read method for a memory system. The read method determines whether a read data error is correctable. The read method applies a plurality of read operations at a set read voltage level to identify erasure candidates, when the error is uncorrectable. The read method performs erasure decoding using an error correction code or an error detection code for the erasure candidates.
摘要翻译：提供了一种用于存储器系统的读取方法。读取方法确定读取数据错误是否可校正。读取方法以设定的读取电压电平施加多个读取操作以识别擦除候选，当错误是不可校正的。读取方法使用用于擦除候选的纠错码或错误检测码来执行擦除解码。

2. 发明申请

US20110216590A1 NONVOLATILE MEMORY DEVICE USING INTERLEAVING TECHNOLOGY AND PROGRAMMMING METHOD THEREOF 有权
标题翻译：使用交互技术的非易失性存储器件及其编程方法
公开(公告)号：US20110216590A1
公开(公告)日：2011-09-08
申请号：US13040626
申请日：2011-03-04
申请人： Hee Seok EUN , Yong June KIM
发明人： Hee Seok EUN , Yong June KIM
IPC分类号： G11C16/10
CPC分类号： G11C16/10
摘要： A nonvolatile memory device using interleaving technology is provided. The nonvolatile memory device includes a first controller configured to allocate one of 2N threshold voltage states to N-bit data where N is 2 or a natural number greater than 2, a second controller configured to set a difference between adjacent threshold voltage states among the 2N threshold voltage states so that the difference increases as a threshold voltage increases, and a programming unit configured to form a threshold voltage distribution state corresponding to the allocated threshold voltage state and to program the N-bit data to a multi-level cell. The second controller controls the difference between the adjacent threshold voltage states to equalize the number of read errors for all intersections among the 2N threshold voltage states at the end of life.
摘要翻译：提供了一种使用交错技术的非易失性存储器件。非易失性存储器件包括：第一控制器，被配置为将2N个阈值电压状态中的一个分配给N为2或大于2的自然数的N位数据;第二控制器，被配置为将2N的阈值电压状态之间的差设定为2N 阈值电压状态使得差异随阈值电压增加而增加，并且编程单元被配置为形成与所分配的阈值电压状态相对应的阈值电压分布状态，并将N位数据编程到多电平单元。第二控制器控制相邻阈值电压状态之间的差异，以平衡在寿命结束时的2N个阈值电压状态之间的所有交点的读取误差的数量。

3. 发明申请

US20130124944A1 MEMORY CONTROLLER FOR NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM COMPRISING MEMORY CONTROLLER, AND RELATED METHODS OF OPERATION 有权
标题翻译：用于非易失性存储器件的存储器控制器，包含存储器控制器的存储器系统及其相关操作方法
公开(公告)号：US20130124944A1
公开(公告)日：2013-05-16
申请号：US13606188
申请日：2012-09-07
申请人： Hee Seok EUN , Jae Hong KIM , Hyung Joon PARK , Young Kwang YOO
发明人： Hee Seok EUN , Jae Hong KIM , Hyung Joon PARK , Young Kwang YOO
IPC分类号： H03M13/05 , G06F11/10 , G06F12/00
CPC分类号： G06F11/1072
摘要： A nonvolatile memory device comprises a memory controller having a memory cell status estimator that generates status estimation information indicating the status of a memory cell based on status register data, a coupling group index selector configured to generate a select signal for selecting a page and coupling group index from the status estimation information, and a memory cell status value generator configured to map the status estimation information to the data reliability decision bits and the coupling group index and generate a status value of the memory cell for error correction code decoding.
摘要翻译：非易失性存储器件包括存储器控制器，其具有存储单元状态估计器，其基于状态寄存器数据产生指示存储器单元的状态的状态估计信息;耦合组索引选择器，被配置为生成用于选择页面的选择信号和耦合组以及存储单元状态值生成器，被配置为将状态估计信息映射到数据可靠性判定位和耦合组索引，并且生成用于纠错码解码的存储单元的状态值。

4. 发明申请

US20120033502A1 METHOD OF READING DATA IN NON-VOLATILE MEMORY DEVICE, AND DEVICE THEREOF 失效
标题翻译：在非易失性存储器件中读取数据的方法及其装置
公开(公告)号：US20120033502A1
公开(公告)日：2012-02-09
申请号：US13198750
申请日：2011-08-05
申请人： Hee Seok EUN , Jae Hong Kim , Kyoung Lae Cho
发明人： Hee Seok EUN , Jae Hong Kim , Kyoung Lae Cho
IPC分类号： G11C16/26 , G11C16/06
CPC分类号： G11C11/5628 , G11C16/26 , G11C16/3418
摘要： A method of reading data in a non-volatile memory device. The method includes reading a plurality of memory cells of a first page in a memory cell array using a first read level, reading a plurality of memory cells of a second page adjacent to the memory cells of the first page using a second read level, determining whether a state of each memory cell of the first page has been changed based on the first read level to verify a threshold voltage of each memory cell of the second page based on the second read level, and revising the state of each memory cell of the second page according to a result of the determination.
摘要翻译：一种在非易失性存储器件中读取数据的方法。该方法包括使用第一读取级别读取存储单元阵列中的第一页的多个存储单元，使用第二读取级别读取与第一页的存储单元相邻的第二页的多个存储单元，确定基于第一读取电平来改变第一页面的每个存储器单元的状态，以基于第二读取电平来验证第二页的每个存储单元的阈值电压，并且修改第二页的每个存储器单元的状态第二页根据确定的结果。

5. 发明申请

US20110289278A1 METHOD OF ESTIMATING READ LEVEL FOR A MEMORY DEVICE, MEMORY CONTROLLER THEREFOR, AND RECORDING MEDIUM 失效
标题翻译：对存储器件的读取电平进行估计的方法，其存储器控制器和记录介质
公开(公告)号：US20110289278A1
公开(公告)日：2011-11-24
申请号：US13114337
申请日：2011-05-24
申请人： Hee Seok EUN , Hong Rak Son , Jong Ha Kim , Young June Kim , Seong Hyeog Choi
发明人： Hee Seok EUN , Hong Rak Son , Jong Ha Kim , Young June Kim , Seong Hyeog Choi
IPC分类号： G06F12/08
CPC分类号： G11C11/5642 , G06F12/0246 , G06F2212/7209 , G11C16/3404 , G11C16/349
摘要： A method of estimating a read level for a memory device includes calculating first information corresponding to at least one among information about the number of cells having a particular logic level in data to be programmed and information about the number of cells having a particular cell state and storing the first information during a program operation; reading the data based on a threshold level that has been set and calculating second information about the number of cells in at least one state defined by the threshold level with respect to the read data; calculating third information about the number of cells in the at least one state, which corresponds to the second information, using a probability based on the first information; comparing the second information with the third information; and determining whether to change the threshold level according to the comparison result.
摘要翻译：一种估计存储器件的读取电平的方法包括：计算对应于关于要编程的数据中具有特定逻辑电平的单元的数量的信息中的至少一个的信息的第一信息以及关于具有特定单元状态的单元的数量的信息，以及在程序操作期间存储第一信息; 基于已经设置的阈值水平读取数据，并且相对于读取的数据计算关于由阈值水平定义的至少一个状态中的单元数量的第二信息; 使用基于所述第一信息的概率来计算与所述第二信息对应的所述至少一个状态下的小区的数量的第三信息; 将第二信息与第三信息进行比较; 以及根据比较结果确定是否改变阈值水平。

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