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1. 发明申请

US20100165310A1 EUV Mask Inspection 审中-公开
标题翻译： EUV面膜检查
公开(公告)号：US20100165310A1
公开(公告)日：2010-07-01
申请号：US12582825
申请日：2009-10-21
申请人： Harry SEWELL , Stoyan Nihtianov , Luigi Scaccabarozzi
发明人： Harry SEWELL , Stoyan Nihtianov , Luigi Scaccabarozzi
IPC分类号： G03B27/42
CPC分类号： G03B27/42 , G01N2021/95676
摘要： A system for inspecting an extreme ultra violet (EUV) mask. The system includes an array of sensors and an optical system. The array of sensors is configured to produce analog data corresponding to received optical energy. The optical system is configured to direct EUV light from an inspection area of an EUV patterning device onto the array of sensors, whereby the analog data is used to determine defects or to compensate for irregularities found on the EUV mask.
摘要翻译：用于检查极紫外（EUV）面罩的系统。该系统包括一组传感器和一个光学系统。传感器阵列被配置为产生对应于接收到的光能的模拟数据。光学系统被配置为将EUV光从EUV图案形成装置的检查区域引导到传感器阵列上，由此模拟数据用于确定缺陷或补偿在EUV掩模上发现的不规则。

2. 发明申请

US20120013866A1 LITHOGRAPHIC APPARATUS, FLUID COMBINING UNIT AND DEVICE MANUFACTURING METHOD 有权
标题翻译：液晶显示装置，流体组合装置及装置制造方法
公开(公告)号：US20120013866A1
公开(公告)日：2012-01-19
申请号：US13238941
申请日：2011-09-21
申请人： Johannes Catharinus Hubertus MULKENS , Matthew LIPSON , Harry SEWELL , Louis John MARKOYA
发明人： Johannes Catharinus Hubertus MULKENS , Matthew LIPSON , Harry SEWELL , Louis John MARKOYA
IPC分类号： G03B27/52
CPC分类号： H01L21/0274 , G03F7/70341
摘要： A system for tuning the refractive index of immersion liquid in an immersion lithographic apparatus is disclosed. Two or more immersion liquids of different refractive index are mixed together in order to achieve a desired refractive index. Further, the fluids may be conditioned and treated to maintain optical characteristics.
摘要翻译：公开了一种用于调节浸没式光刻设备中浸没液的折射率的系统。将两种或更多种不同折射率的浸液混合在一起以达到所需的折射率。此外，流体可以被调节和处理以保持光学特性。

3. 发明申请

US20090190106A1 IMMERSION LITHOGRAPHY APPARATUS 审中-公开
标题翻译：倾斜平面设备
公开(公告)号：US20090190106A1
公开(公告)日：2009-07-30
申请号：US12358931
申请日：2009-01-23
申请人： Harry SEWELL , Louis John Markoya
发明人： Harry SEWELL , Louis John Markoya
IPC分类号： G03B27/52
CPC分类号： G03F7/70916 , G03F7/70341
摘要： An immersion lithographic apparatus is disclosed having a projection system, a liquid supply system, and a recycling system. The projection system is configured to project a patterned radiation beam onto a target portion of a substrate, wherein a substrate table is configured to support the substrate. The liquid supply system is configured to provide an immersion liquid to a space between the projection system and the substrate or the substrate table. The recycling system is configured to collect the immersion liquid from the liquid supply system and to supply the immersion liquid to the liquid supply system. The recycling system includes a fiber configured to remove organic contaminants from the immersion liquid.
摘要翻译：公开了一种具有投影系统，液体供应系统和再循环系统的浸没式光刻设备。投影系统被配置为将图案化的辐射束投影到基板的目标部分上，其中衬底台被配置为支撑衬底。液体供应系统被配置为向投影系统和衬底或衬底台之间的空间提供浸没液体。回收系统被配置为从液体供应系统收集浸没液体并将浸没液体供应到液体供应系统。回收系统包括被配置为从浸没液中除去有机污染物的纤维。

4. 发明申请

US20110075238A1 Method and System for Increasing Alignment Target Contrast 失效
标题翻译：增加对齐目标对比度的方法和系统
公开(公告)号：US20110075238A1
公开(公告)日：2011-03-31
申请号：US12730906
申请日：2010-03-24
申请人： Harry SEWELL , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
发明人： Harry SEWELL , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
IPC分类号： G02B5/18 , G02B5/23 , G03B27/54 , G03F7/20
CPC分类号： G03F9/7084 , G03F9/7076 , G03F9/708
摘要： A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.
摘要翻译：使用双重图案化工艺来对准半导体晶片。沉积具有第一光学特性的第一抗蚀层，并形成至少一个对准标记。开发出第一抗蚀剂层。具有第二光学特性的第二抗蚀剂层沉积在第一抗蚀剂层上。第一和第二抗蚀剂层和对准标记的组合具有使得入射到对准标记上的预定波长的辐射产生作为第一和第二光学特性的函数的第一或更高阶衍射。

5. 发明申请

US20100149505A1 EUV Mask Inspection System 有权
标题翻译： EUV面罩检测系统
公开(公告)号：US20100149505A1
公开(公告)日：2010-06-17
申请号：US12605627
申请日：2009-10-26
申请人： Harry SEWELL , Eric Brian Catey , Adel Joobeur , Yevgeniy Konstantinovich Shmarev
发明人： Harry SEWELL , Eric Brian Catey , Adel Joobeur , Yevgeniy Konstantinovich Shmarev
IPC分类号： G03B27/54 , G01V8/00
CPC分类号： G03B27/54 , G01N2021/95676 , G03F7/70208 , G03F7/70275 , G03F7/7085 , G03F7/70991
摘要： Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.
摘要翻译：公开了用于EUV掩模检查的装置，方法和光刻系统。 EUV掩模检查系统可以包括EUV照明源，光学系统和图像传感器。 EUV照明源可以是独立的照明系统或集成到光刻系统中，其中EUV照明源可被配置为将EUV辐射束照射到掩模的目标部分上。光学系统可以被配置为从掩模的目标部分接收反射的EUV辐射束的至少一部分。此外，图像传感器可以被配置为检测对应于反射的EUV辐射束的该部分的空间图像。 EUV掩模检查系统还可以包括被配置为分析掩模缺陷的空中图像的数据分析装置。

6. 发明申请

US20080285428A1 System and Method for Forming Nanodisks Used in Imprint Lithography and Nanodisk and Memory Disk Formed Thereby 有权
标题翻译：用于形成印刷光刻和纳米盘和记忆盘的纳米盘的系统和方法由此形成
公开(公告)号：US20080285428A1
公开(公告)日：2008-11-20
申请号：US12128463
申请日：2008-05-28
申请人： Harry SEWELL
发明人： Harry SEWELL
IPC分类号： G11C11/14 , G11B3/70
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G11B5/743 , G11B5/746 , G11B5/82 , G11B5/855 , Y10S977/887 , Y10T29/49021 , Y10T29/49069
摘要： A system and method form a nanodisk that can be used to form isolated data bits on a memory disk. The imprint stamp is formed from first and second overlapping patterns, where the patterns are selectively etched. The selective etching leaves either pits or posts on the imprint stamp. The pits or posts are imprinted on the memory disk, leaving either pits or posts on the memory disk. The pits or posts on the memory disk are processed to form relatively small and dense isolated data bits. Instability of the isolated data bits caused by outside magnetic and thermal influences is substantially eliminated.
摘要翻译：系统和方法形成可以用于在存储器盘上形成隔离数据位的纳米盘。压印印模由第一和第二重叠图案形成，其中图案被选择性地蚀刻。选择性蚀刻留下印记戳上的凹坑或柱子。凹坑或帖子印在内存磁盘上，留下内存磁盘上的凹坑或帖子。处理存储器盘上的坑或柱以形成相对小且密集的隔离数据位。实际上消除了由外部磁和热影响引起的隔离数据位的不稳定性。

7. 发明申请

US20110122380A1 IMMERSION PHOTOLITHOGRAPHY SYSTEM AND METHOD USING INVERTED WAFER-PROJECTION OPTICS INTERFACE 审中-公开
标题翻译：使用反射波投影光学界面的曝光光刻系统和方法
公开(公告)号：US20110122380A1
公开(公告)日：2011-05-26
申请号：US13016140
申请日：2011-01-28
申请人： Harry SEWELL
发明人： Harry SEWELL
IPC分类号： G03B27/52
CPC分类号： G03F7/70341 , G03F7/70233
摘要： A liquid immersion photolithography system includes an exposure system that exposes a substrate with electromagnetic radiation, and also includes an optical system that images the electromagnetic radiation on the substrate. A liquid is between the optical system and the substrate. The projection optical system is positioned below the substrate.
摘要翻译：液浸光刻系统包括用电磁辐射曝光基板的曝光系统，还包括对基片上的电磁辐射进行成像的光学系统。液体在光学系统和基板之间。投影光学系统位于基板的下方。

8. 发明申请

US20100271604A1 SYSTEM AND METHOD TO INCREASE SURFACE TENSION AND CONTACT ANGLE IN IMMERSION LITHOGRAPHY 有权
标题翻译：增加表面张力和接触角度的系统和方法
公开(公告)号：US20100271604A1
公开(公告)日：2010-10-28
申请号：US12834691
申请日：2010-07-12
申请人： Harry SEWELL
发明人： Harry SEWELL
IPC分类号： G03B27/52 , G03B27/32
CPC分类号： G03F7/70341 , G03F7/7095
摘要： A system and method to allow organic fluids to be used in immersion lithographic systems. This is done by providing a showerhead portion of a liquid supply system that is partially coated or made from a TEFLON like material. The TEFLON like material reduces wetness effect, and thus increases containment, when using an organic immersion fluid in a space between the last optic and the substrate.
摘要翻译：允许有机流体用于浸没式光刻系统的系统和方法。这是通过提供部分涂覆或由TEFLON类材料制成的液体供应系统的喷头部分来实现的。当在最后一个光学元件和衬底之间的空间中使用有机浸没流体时，TEFLON类材料会降低湿度效应，从而增加容纳物。

9. 发明申请

US20090185149A1 IMMERSION LITHOGRAPHIC APPARATUS WITH IMMERSION FLUID RE-CIRCULATING SYSTEM 失效
标题翻译：静态流体再循环系统的立式设备
公开(公告)号：US20090185149A1
公开(公告)日：2009-07-23
申请号：US12355039
申请日：2009-01-16
申请人： Harry SEWELL , Erik Roelof Loopstra , Johannes Catharinus Hubertus Mulkens , Louis John Markoya , Diane McCafferty
发明人： Harry SEWELL , Erik Roelof Loopstra , Johannes Catharinus Hubertus Mulkens , Louis John Markoya , Diane McCafferty
IPC分类号： G03B27/52 , G03B27/42
CPC分类号： G03F7/70341
摘要： A lithographic apparatus includes a projection system, a fluid handling structure, a metrology device, and a recycling control device. The projection system is configured to project a patterned radiation beam onto a target portion of a substrate, the substrate being supported on a substrate table. The fluid handling structure is configured to provide an immersion fluid to a space between the projection system and the substrate and/or substrate table. The metrology device is configured to monitor a parameter of the immersion fluid. The recycling control device regulates a routing of the immersion fluid either to be reused by the fluid handling structure or to be reconditioned based on the quality of immersion fluid indicated by the metrology device.
摘要翻译：光刻设备包括投影系统，流体处理结构，计量装置和再循环控制装置。投影系统被配置为将图案化的辐射束投影到基板的目标部分上，该基板被支撑在基板台上。流体处理结构被配置为向投影系统和衬底和/或衬底台之间的空间提供浸没流体。测量装置被配置为监测浸没流体的参数。回收控制装置调节浸没流体的路线，以便由流体处理结构重新使用，或者基于由计量装置指示的浸入流体的质量进行再修复。

10. 发明申请

US20100033698A1 Full Wafer Width Scanning Using Steps and Scan System 审中-公开
标题翻译：使用步骤和扫描系统完全晶圆宽度扫描
公开(公告)号：US20100033698A1
公开(公告)日：2010-02-11
申请号：US12509062
申请日：2009-07-24
申请人： Harry SEWELL
发明人： Harry SEWELL
IPC分类号： G03B27/42 , G03B27/32
CPC分类号： G03F7/70466 , G03F7/70358 , G03F7/70433
摘要： A system and method are provided for writing a pattern onto a substrate. A patterned beam of radiation is produced using a reticle and projected onto a substrate to expose the pattern. Reticle and substrate speeds are controlled such that respective scanning speeds of the reticle and the substrate allow the pattern to be exposed across an entire width of the substrate in the scanning direction, which provides a substantial increase in wafer throughput.
摘要翻译：提供了用于将图案写入基板的系统和方法。使用掩模版产生图案化的辐射束，并将其投影到衬底上以暴露图案。控制掩模版和衬底速度，使得掩模版和衬底的相应扫描速度允许图案沿着扫描方向在衬底的整个宽度上暴露，这提供了晶片生产量的显着增加。

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