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    • 4. 发明授权
    • Method and system for determining object height
    • 用于确定物体高度的方法和系统
    • US07567885B2
    • 2009-07-28
    • US11843978
    • 2007-08-23
    • Harald HerchenKim VelloreErica Renee Porras
    • Harald HerchenKim VelloreErica Renee Porras
    • G06F19/00
    • G01B5/061G01B7/082
    • An apparatus and method for measuring a height of an object above a surface includes a housing with a first portion having an upper surface and a lower surface and an extension portion extending a first distance from the lower surface of the first portion. The extension portion defines a cavity opposing the lower surface of the first portion. The apparatus further includes one or more actuators passing through the lower surface of the first portion of the housing and extending into the cavity. Additionally, the apparatus includes a plate supported by one or more flexible members coupled to the extension portion. The plate has a top surface and a bottom surface that lies in a plane substantially parallel to the surface. Moreover, the apparatus includes a plurality of sensors disposed at predetermined positions of the plate. Each of the plurality of sensors is responsive to a height measured between each of the plurality of sensors and the surface.
    • 用于测量表面上方的物体的高度的装置和方法包括具有第一部分的壳体,该第一部分具有上表面和下表面,以及从第一部分的下表面延伸第一距离的延伸部分。 延伸部分限定了与第一部分的下表面相对的空腔。 该装置还包括通过壳体的第一部分的下表面并延伸到空腔中的一个或多个致动器。 另外,该装置包括由耦合到延伸部分的一个或多个柔性构件支撑的板。 板具有位于基本上平行于表面的平面中的顶表面和底表面。 此外,该装置包括设置在板的预定位置的多个传感器。 多个传感器中的每一个响应于在多个传感器中的每一个和表面之间测量的高度。
    • 5. 发明授权
    • Wafer bevel particle detection
    • 晶圆斜角粒子检测
    • US07521915B2
    • 2009-04-21
    • US11412058
    • 2006-04-25
    • Harald HerchenChristopher L. Beaudry
    • Harald HerchenChristopher L. Beaudry
    • G01R31/28
    • H01L22/14
    • An apparatus adapted to detect a particle present on a bevel of a wafer. The apparatus includes a substrate support and a sensor housing adapted to receive an edge of the wafer. The sensor housing includes one or more probe electrodes and one or more position sensors. The apparatus also includes a translatable stage coupled to the sensor housing. The translatable stage is adapted to control the distance between the bevel of the wafer and the one or more position sensors. The apparatus further includes electrical circuitry electrically coupled to the substrate support and the one or more probe electrodes and adapted to generate an electric field between the bevel of the wafer and the one or more probe electrodes, detection circuitry electrically coupled to the electrical circuitry, and a processor adapted to process electrical signals and thereby detect the particle present on the bevel of the wafer.
    • 一种适用于检测存在于晶片斜面上的颗粒的装置。 该装置包括衬底支撑件和适于接收晶片边缘的传感器外壳。 传感器外壳包括一个或多个探针电极和一个或多个位置传感器。 该装置还包括耦合到传感器外壳的可平移台。 可平移台适于控制晶片的斜面与一个或多个位置传感器之间的距离。 所述装置还包括电耦合到所述衬底支撑件和所述一个或多个探针电极并且适于在所述晶片的所述斜面与所述一个或多个探针电极之间产生电场的电路,电耦合到所述电路的检测电路,以及 处理器,其适于处理电信号,从而检测存在于晶片的斜面上的颗粒。
    • 6. 发明申请
    • METHOD TO COOL BAKE PLATES IN A TRACK LITHOGRAPHY TOOL
    • 用于在轨道光刻工具中烘烤烤盘的方法
    • US20080236787A1
    • 2008-10-02
    • US11693550
    • 2007-03-29
    • Harald HerchenAnzhong ChangNatarajan Ramanan
    • Harald HerchenAnzhong ChangNatarajan Ramanan
    • F28F7/00
    • H01L21/67184H01L21/67109H01L21/67225
    • A method of reducing a temperature of a bake plate within a semiconductor processing tool includes (a) providing a substrate and (b) transferring the substrate to a position adjacent the bake plate. The bake plate is characterized by an initial bake plate temperature greater than a set point temperature. The method also includes (c) reducing the temperature of the bake plate by a first predetermined amount and (d) transferring the substrate from the position adjacent the bake plate to a position adjacent a chill plate. The chill plate is characterized by a chill plate temperature less than the set point temperature. The method further includes (e) transferring the substrate from the position adjacent the chill plate to the position adjacent the bake plate, (f) reducing the temperature of the bake plate by a second predetermined amount, (g) monitoring the temperature of the bake plate, and (h) repeating steps (d) through (g) until the bake plate temperature is within a predetermined tolerance of the set point temperature.
    • 降低半导体加工工具中烘烤板温度的方法包括(a)提供基材和(b)将基材转移到与烘烤板相邻的位置。 烘烤板的特征在于初始烘烤板温度大于设定温度。 该方法还包括(c)将烘烤板的温度降低第一预定量,以及(d)将基板从邻近烘烤板的位置转移到与冷却板相邻的位置。 冷却板的特征在于冷却板温度低于设定点温度。 该方法还包括(e)将基板从与冷板相邻的位置转移到与烘烤板相邻的位置,(f)将烘烤板的温度降低第二预定量,(g)监测烘烤温度 板和(h)重复步骤(d)至(g),直到烘烤板温度在设定温度的预定公差内。
    • 7. 发明申请
    • INTERLACED RTD SENSOR FOR ZONE/AVERAGE TEMPERATURE SENSING
    • 用于区域/平均温度感测的相互连接的RTD传感器
    • US20080224817A1
    • 2008-09-18
    • US11686781
    • 2007-03-15
    • Kim R. VelloreHarald HerchenBrian C. Lue
    • Kim R. VelloreHarald HerchenBrian C. Lue
    • H01C7/02
    • G01K1/14H01L21/67103H01L21/67248
    • A device for heating a semiconductor wafer comprises a heating element arranged to conduct heat toward the wafer. The heating element can extend along a heating element path. An RTD sensor loop can extend along an RTD sensor path. The RTD sensor path can be positioned along the heating element path to measure a temperature that corresponds to the heating element. The RTD sensor loop can measure an average temperature along the heating element. Portions of the RTD sensor can be interlaced between portions of the heating element. The heating element path can be arranged with interstices between portions of the heating element path, and portions of the RTD sensor path can be positioned within the interstices to interlace the RTD sensor loop with the heating element. The RTD sensor loop can comprise a soft metal that is resistant to oxidation and extends along the RTD sensor path.
    • 用于加热半导体晶片的装置包括布置成朝向晶片传导热量的加热元件。 加热元件可以沿着加热元件路径延伸。 RTD传感器回路可以沿着RTD传感器路径延伸。 RTD传感器路径可以沿着加热元件路径定位,以测量对应于加热元件的温度。 RTD传感器回路可以测量加热元件的平均温度。 RTD传感器的部分可以在加热元件的部分之间交错。 加热元件路径可以在加热元件路径的部分之间布置有间隙,并且RTD传感器路径的部分可以位于间隙内,以使RTD传感器回路与加热元件交错。 RTD传感器回路可以包括耐金属氧化并沿RTD传感器路径延伸的软金属。
    • 8. 发明申请
    • Wafer backside particle removal for track tools
    • 轨道工具的晶片背面颗粒去除
    • US20080032491A1
    • 2008-02-07
    • US11501201
    • 2006-08-07
    • Harald Herchen
    • Harald Herchen
    • H01L21/322
    • H01L21/2686H01L21/67028H01L21/67115
    • An apparatus for removing one or more backside particles from a semiconductor substrate. The apparatus includes a substrate support member adapted to support the semiconductor substrate. The substrate has a substrate diameter, a substrate frontside, and a substrate backside. The apparatus also includes a curing ring having an annular shape and a curing ring support member adapted to position the curing ring at a predetermined distance from the backside of the semiconductor substrate, thereby defining a removal region. The apparatus further includes a phase change material dispense system adapted to provide a phase change material to the removal region and an ultraviolet source adapted to irradiate the phase change material.
    • 一种用于从半导体衬底去除一个或多个背面颗粒的设备。 该装置包括适于支撑半导体衬底的衬底支撑构件。 衬底具有衬底直径,衬底前侧和衬底背面。 该设备还包括具有环形形状的固化环和固化环支撑构件,其适于将固化环定位在离半导体衬底的背面预定距离处,从而限定去除区域。 该装置还包括相变材料分配系统,其适于向去除区域提供相变材料,以及适于照射相变材料的紫外线源。
    • 9. 发明申请
    • Wafer bevel particle detection
    • 晶圆斜角粒子检测
    • US20070247137A1
    • 2007-10-25
    • US11412058
    • 2006-04-25
    • Harald HerchenChristopher Beaudry
    • Harald HerchenChristopher Beaudry
    • G01N27/00
    • H01L22/14
    • An apparatus adapted to detect a particle present on a bevel of a wafer. The apparatus includes a substrate support and a sensor housing adapted to receive an edge of the wafer. The sensor housing includes one or more probe electrodes and one or more position sensors. The apparatus also includes a translatable stage coupled to the sensor housing. The translatable stage is adapted to control the distance between the bevel of the wafer and the one or more position sensors. The apparatus further includes electrical circuitry electrically coupled to the substrate support and the one or more probe electrodes and adapted to generate an electric field between the bevel of the wafer and the one or more probe electrodes, detection circuitry electrically coupled to the electrical circuitry, and a processor adapted to process electrical signals and thereby detect the particle present on the bevel of the wafer.
    • 一种适用于检测存在于晶片斜面上的颗粒的装置。 该装置包括衬底支撑件和适于接收晶片边缘的传感器外壳。 传感器外壳包括一个或多个探针电极和一个或多个位置传感器。 该装置还包括耦合到传感器外壳的可平移台。 可平移台适于控制晶片的斜面与一个或多个位置传感器之间的距离。 所述装置还包括电耦合到所述衬底支撑件和所述一个或多个探针电极并且适于在所述晶片的所述斜面与所述一个或多个探针电极之间产生电场的电路,电耦合到所述电路的检测电路,以及 处理器,其适于处理电信号,从而检测存在于晶片的斜面上的颗粒。