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1. 发明授权

US5070735A Pressure sensor 失效
标题翻译：压力传感器
公开(公告)号：US5070735A
公开(公告)日：1991-12-10
申请号：US530338
申请日：1990-05-30
申请人： Hansjoerg Reichert , Karl Platzoeder , Guenter Ehrler
发明人： Hansjoerg Reichert , Karl Platzoeder , Guenter Ehrler
IPC分类号： G01L9/00 , G01L19/06
CPC分类号： G01L9/0042 , G01L19/0618
摘要： A silicon membrane pressure sensor which has a carrier chip and a membrane chip 3 for which overload protection is desired to protect against the pressure on the front side of the membrane. An overload member 7 is mounted between the carrier chip 2 and the membrane chip 3 such that the overload member is connected to the membrane chip at a middle island portion 5 of the membrane chip 3 and with a first distance D1 from the carrier chip 2 in the non-loaded condition such that when pressure occurs the overload member will remove the load on the membrane chip.
摘要翻译：一种具有载体芯片和薄膜芯片3的硅膜压力传感器，其中期望过载保护以防止膜正面的压力。过载部件7安装在载体芯片2和膜芯片3之间，使得过载部件在薄膜芯片3的中间岛部分5处连接到膜芯片，并且与载体芯片2的第一距离D1连接无负载状态使得当发生压力时，过载部件将去除膜芯片上的负载。

2. 发明授权

US4888301A Method for generating a sunken oxide 失效
标题翻译：产生凹陷氧化物的方法
公开(公告)号：US4888301A
公开(公告)日：1989-12-19
申请号：US245853
申请日：1988-09-16
申请人： Hansjoerg Reichert , Ludwig Scharf , Heidemarie Goedecke , Herbert Weidlcih
发明人： Hansjoerg Reichert , Ludwig Scharf , Heidemarie Goedecke , Herbert Weidlcih
IPC分类号： H01L21/762
CPC分类号： H01L21/76205
摘要： A method for producing a recessed oxide allows the fabrication of large bonding pads with small capacitance. These bonding pads on simultaneously thick oxide on the semiconductor surface enable contact exposure with good image formation of fine structures on the surface of a transistor. With a protective layer (2), a region (S1) of a semiconductor surface (1) is covered. The area of the semiconductor surface (1) uncovered with the protective layer (2) is etched. Subsequently, an oxide (3) of desired thickness (b) is deposited. With a second phototechnological step the deposited oxide (3) is etched with a structure (S2). Thermal oxidation follows with growth of a hermetic oxide layer (4) the thickness (c) of which is small relative to the thickness (b) of the deposited oxide layer (3). The thermic oxide layer (4) is structured to form the desired geometry.
摘要翻译：用于制造凹陷氧化物的方法允许制造具有小电容的大焊接焊盘。半导体表面上同时厚的氧化物上的这些接合焊盘能够在晶体管的表面上形成良好的精细结构的接触曝光。利用保护层（2），覆盖半导体表面（1）的区域（S1）。蚀刻用保护层（2）未覆盖的半导体表面（1）的区域。随后，沉积所需厚度（b）的氧化物（3）。通过第二光电技术，用结构（S2）蚀刻沉积的氧化物（3）。随着厚度（c）相对于沉积的氧化物层（3）的厚度（b）较小的气密氧化物层（4）的生长，伴随着热氧化。热氧化物层（4）被构造成形成所需的几何形状。

3. 发明授权

US4808542A Process for the stabilization of PN junctions 失效
标题翻译： PN结稳定过程
公开(公告)号：US4808542A
公开(公告)日：1989-02-28
申请号：US84525
申请日：1987-08-10
申请人： Hansjoerg Reichert , Ludwig Scharf , Margarete Deckers
发明人： Hansjoerg Reichert , Ludwig Scharf , Margarete Deckers
IPC分类号： H01L21/00 , H01L21/033 , H01L21/311 , H01L21/314 , H01L29/08 , H01L21/425
CPC分类号： H01L21/033 , H01L21/31111 , H01L21/3144
摘要： In a process for the stabilization of a PN junction an oxide layer (12) is produced on a semiconductor substrate (11), and above this layer a nitride layer (13) is also produced. The oxide layer (12) is wet-chemically etched following the formation and etching of the nitride layer (13). Following the wet chemical etching of the oxide layer (12), the overlapping nitride (13) is re-etched. Dopant implantation takes place in the wet-chemically-etched region. This then is followed by a diffusion. A process of this type achieves high electrical stability for an electronic component. Thereupon, the photoresist (14) or any other type of layer covering the nitride (13) is removed.
摘要翻译：在PN结的稳定化处理中，在半导体衬底（11）上产生氧化物层（12），并且在该层上方也产生氮化物层（13）。在氮化物层（13）的形成和蚀刻之后，氧化层（12）被湿式化学蚀刻。在氧化物层（12）的湿化学蚀刻之后，重新蚀刻重叠的氮化物（13）。在湿化学蚀刻区域中发生掺杂剂注入。然后是扩散。这种方法对于电子部件实现了高的电稳定性。因此，去除了覆盖氮化物（13）的光致抗蚀剂（14）或任何其它类型的层。

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