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1. 发明授权

US5070735A Pressure sensor 失效
标题翻译：压力传感器
公开(公告)号：US5070735A
公开(公告)日：1991-12-10
申请号：US530338
申请日：1990-05-30
申请人： Hansjoerg Reichert , Karl Platzoeder , Guenter Ehrler
发明人： Hansjoerg Reichert , Karl Platzoeder , Guenter Ehrler
IPC分类号： G01L9/00 , G01L19/06
CPC分类号： G01L9/0042 , G01L19/0618
摘要： A silicon membrane pressure sensor which has a carrier chip and a membrane chip 3 for which overload protection is desired to protect against the pressure on the front side of the membrane. An overload member 7 is mounted between the carrier chip 2 and the membrane chip 3 such that the overload member is connected to the membrane chip at a middle island portion 5 of the membrane chip 3 and with a first distance D1 from the carrier chip 2 in the non-loaded condition such that when pressure occurs the overload member will remove the load on the membrane chip.
摘要翻译：一种具有载体芯片和薄膜芯片3的硅膜压力传感器，其中期望过载保护以防止膜正面的压力。过载部件7安装在载体芯片2和膜芯片3之间，使得过载部件在薄膜芯片3的中间岛部分5处连接到膜芯片，并且与载体芯片2的第一距离D1连接无负载状态使得当发生压力时，过载部件将去除膜芯片上的负载。

2. 发明授权

US4761210A Method for generating structures in micro-mechanics 失效
标题翻译：微机械结构生成方法
公开(公告)号：US4761210A
公开(公告)日：1988-08-02
申请号：US874427
申请日：1986-06-16
申请人： Guenter Ehrler , Heinz Hagen , Klaus Becker
发明人： Guenter Ehrler , Heinz Hagen , Klaus Becker
IPC分类号： C23F1/00 , C23F1/02 , C25F3/14 , H01L21/308
CPC分类号： C23F1/02 , C25F3/14 , H01L21/308
摘要： A method for generating patterned structures on a monolith substrate in micro-mechanics to permit the production of at least two successive structurings with the depths required in micro-mechanics. At least two different, selectively removable etching masks which are etchable by different etching agents are applied in sequence to the substrate. A first structuring or patterning step is then employed after the last etching mask has been generated. A further etching step occurs after the removal of the last etching mask through the use of the etching masks then remaining on the substrate. The removal of additional etching masks and generating further structuring steps are repeated until the number of etching steps that have been carried out is the same as the number of etching masks that had been originally present on the monolith substrate.
摘要翻译：一种用于在微力学中在整体衬底上产生图案结构以允许至少两个连续构造与微力学所需的深度的生成的方法。可以将不同蚀刻剂刻蚀的至少两种不同的，选择性可移除的蚀刻掩模依次施加到基底上。然后在产生最后的蚀刻掩模之后采用第一结构或图案化步骤。在通过使用蚀刻掩模然后保留在基板上去除最后的蚀刻掩模之后，进行另外的蚀刻步骤。重复去除附加的蚀刻掩模并产生进一步的结构化步骤，直到已经进行的蚀刻步骤的数量与最初存在于整体衬底上的蚀刻掩模的数量相同。

3. 发明授权

US07268436B2 Electronic device with cavity and a method for producing the same 失效
标题翻译：具有腔体的电子器件及其制造方法
公开(公告)号：US07268436B2
公开(公告)日：2007-09-11
申请号：US10795344
申请日：2004-03-09
申请人： Robert Aigner , Albert Auburger , Frank Daeche , Guenter Ehrler , Andreas Meckes , Horst Theuss , Michael Weber
发明人： Robert Aigner , Albert Auburger , Frank Daeche , Guenter Ehrler , Andreas Meckes , Horst Theuss , Michael Weber
IPC分类号： H01L23/12 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H03H9/1085 , H01L23/3107 , H01L23/4951 , H01L2224/32145 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H03H9/0547 , H03H9/105 , H01L2924/00014 , H01L2924/00
摘要： An electronic device can include a top side with circuit structures. The circuit structures form the bottom region of a cavity. Each cavity can be surrounded by a cavity frame made of plastic and can have a cavity cover made of semiconductor material.
摘要翻译：电子设备可以包括具有电路结构的顶侧。电路结构形成空腔的底部区域。每个空腔可以由塑料制成的空腔框架包围，并且可以具有由半导体材料制成的空腔盖。

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