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    • 1. 发明授权
    • Semiconductor laser diodes
    • 半导体激光二极管
    • US08831062B2
    • 2014-09-09
    • US13639833
    • 2011-04-06
    • Hans-Ulrich PfeifferAndrew Cannon CarterJörg TrogerNorbert LichtensteinMichael SchwarzAbram JakubowiczBoris Sverdlov
    • Hans-Ulrich PfeifferAndrew Cannon CarterJörg TrogerNorbert LichtensteinMichael SchwarzAbram JakubowiczBoris Sverdlov
    • H01S5/00H01S5/042H01S5/22H01S5/20H01S5/10H01S5/16
    • H01S5/0425H01S5/0014H01S5/1039H01S5/1053H01S5/1064H01S5/16H01S5/2004H01S5/22
    • A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
    • 半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。 激光二极管在n区域和p区域之间设置有有源区域,其具有前端部分和后端部分,邻近n区域的n-金属化层,并且具有用于将电流注入到第一注入器中的第一注入器 有源区和与n金属化层相对并且邻近p区的p金属化层,并且具有用于将电流注入到有源区中的第二注入器。 选择至少一个金属化层的厚度和/或宽度,以便与有源区域的另一部分中的电流注入相比,控制有源区域的至少一端附近的有源区域的一部分中的电流注入。 至少一个金属化层的宽度大于有源区的宽度。 这种布置导致在有源区域的前端附近的电流分布基本均匀。 有利地,这种均匀的电流密度显着提高了激光二极管的可靠性。
    • 2. 发明申请
    • SEMICONDUCTOR LASER DIODES
    • 半导体激光二极管
    • US20130070800A1
    • 2013-03-21
    • US13639833
    • 2011-04-06
    • Hans-Ulrich PfeifferAndrew Cannon CarterJörg TrogerNorbert LichtensteinMichael SchwarzAbram JakubowiczBoris Sverdlov
    • Hans-Ulrich PfeifferAndrew Cannon CarterJörg TrogerNorbert LichtensteinMichael SchwarzAbram JakubowiczBoris Sverdlov
    • H01S5/40H01L21/28
    • H01S5/0425H01S5/0014H01S5/1039H01S5/1053H01S5/1064H01S5/16H01S5/2004H01S5/22
    • A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
    • 半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。 激光二极管在n区和p区之间设置有一有源区,该区具有一前端和一后端段,n-金属化层位于邻近该n-区并具有用于将电流注入 有源区和与n金属化层相对并且邻近p区的p金属化层,并且具有用于将电流注入到有源区中的第二注入器。 选择至少一个金属化层的厚度和/或宽度,以便与有源区域的另一部分中的电流注入相比,控制有源区域的至少一端附近的有源区域的一部分中的电流注入。 至少一个金属化层的宽度大于有源区的宽度。 这种布置导致在有源区域的前端附近的电流分布基本均匀。 有利地,这种均匀的电流密度显着提高了激光二极管的可靠性。
    • 3. 发明授权
    • High power semiconductor laser diode
    • 大功率半导体激光二极管
    • US08908729B2
    • 2014-12-09
    • US11993304
    • 2006-06-28
    • Christoph HarderAbram JakubowiczNicolai MatuschekJoerg TrogerMichael Schwarz
    • Christoph HarderAbram JakubowiczNicolai MatuschekJoerg TrogerMichael Schwarz
    • H01S3/00H01S5/042H01S5/022H01S5/10H01S5/16H01S5/20H01S5/22
    • H01S5/0425H01L2224/48463H01S5/02276H01S5/1039H01S5/16H01S5/2036H01S5/22
    • Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
    • 半导体激光二极管,特别是具有高光输出功率的广域单发射器(BASE)激光二极管通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的,并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计,特别地通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下,特别地显着地最小化或避免(前)端部部分退化的改进。 这通过以新颖的方式通过沿着激光二极管的纵向延伸,例如通过产生单电流注入点来控制载流子注入即注入电流来实现。 沿着波导。 此外,每个单个或一组电流注入点的供电电流/电压可以单独调节,进一步增强了载流子注入的可控性。
    • 4. 发明申请
    • HIGH POWER SEMICONDUCTOR OPTO-ELECTRONIC DEVICE
    • 高功率半导体光电设备
    • US20100220762A1
    • 2010-09-02
    • US11993247
    • 2006-06-28
    • Christoph HarderAbram JakubowiczNicolai MatuschekJoerg TrogerMichael Schwarz
    • Christoph HarderAbram JakubowiczNicolai MatuschekJoerg TrogerMichael Schwarz
    • H01S5/042
    • H01S5/0425H01S5/1053H01S5/1064H01S5/168H01S5/2036H01S5/2216H01S5/2231
    • Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
    • 半导体激光二极管,特别是具有高光输出功率的广域单发射极(BASE)激光二极管,通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的,并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计,特别是通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下显着地最小化或避免这种激光二极管的劣化的改进。 与现有技术的设计相比,这种激光二极管(前端)部分退化的最小化或避免显着增加了长期稳定性。 这是通过控制在其小面附近的激光二极管的载流子注入,以避免突然的注入电流峰值来实现的。 为此,电流阻挡隔离层(14)在其边缘或边界处成形为使得其显示不均匀或部分不连续的机械结构,导致朝向所述隔离层的边缘的有效隔离减小,从而提供 在隔离区域和非隔离区域之间基本上非突然或甚至近似连续的过渡。
    • 5. 发明授权
    • High power semiconductor opto-electronic device
    • 大功率半导体光电器件
    • US08111727B2
    • 2012-02-07
    • US11993247
    • 2006-06-28
    • Christoph HarderAbram JakubowiczNicolai MatuschekJoerg TrogerMichael Schwarz
    • Christoph HarderAbram JakubowiczNicolai MatuschekJoerg TrogerMichael Schwarz
    • H01S5/00
    • H01S5/0425H01S5/1053H01S5/1064H01S5/168H01S5/2036H01S5/2216H01S5/2231
    • Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
    • 半导体激光二极管,特别是具有高光输出功率的广域单发射极(BASE)激光二极管,通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的,并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计,特别是通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下显着地最小化或避免这种激光二极管的劣化的改进。 与现有技术的设计相比,这种激光二极管(前端)部分退化的最小化或避免显着增加了长期稳定性。 这是通过控制在其小面附近的激光二极管的载流子注入,以避免突然的注入电流峰值来实现的。 为此,电流阻挡隔离层(14)在其边缘或边界处成形为使得其显示不均匀或部分不连续的机械结构,导致朝向所述隔离层的边缘的有效隔离减小,从而提供 在隔离区域和非隔离区域之间基本上非突然或甚至近似连续的过渡。
    • 6. 发明申请
    • HIGH POWER SEMICONDUCTOR LASER DIODE
    • 大功率半导体激光二极管
    • US20100189152A1
    • 2010-07-29
    • US11993304
    • 2006-06-28
    • Christoph HarderAbram JakubowiczNicolai MatuschekJoerg TrogerMichael Schwarz
    • Christoph HarderAbram JakubowiczNicolai MatuschekJoerg TrogerMichael Schwarz
    • H01S5/20H01S5/042H01S5/02
    • H01S5/0425H01L2224/48463H01S5/02276H01S5/1039H01S5/16H01S5/2036H01S5/22
    • Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
    • 半导体激光二极管,特别是具有高光输出功率的广域单发射器(BASE)激光二极管通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的,并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计,特别地通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下,特别地显着地最小化或避免(前)端部部分退化的改进。 这通过以新颖的方式通过沿着激光二极管的纵向延伸,例如通过产生单电流注入点来控制载流子注入即注入电流来实现。 沿着波导。 此外,每个单个或一组电流注入点的供电电流/电压可以单独调节,进一步增强了载流子注入的可控性。
    • 8. 发明授权
    • Vehicle brake system for a motor vehicle and method for actuating the vehicle brake system during release of the parking brake function
    • 用于机动车辆的车辆制动系统以及在释放驻车制动功能期间致动车辆制动系统的方法
    • US09340192B2
    • 2016-05-17
    • US13813304
    • 2011-07-07
    • Michael SchwarzHolger Schmidt
    • Michael SchwarzHolger Schmidt
    • B60T13/70B60T13/58B60T7/04B60T13/66B60T13/74F16D55/226F16D65/18B60T8/32F16D121/02F16D121/24F16D123/00
    • B60T13/588B60T7/042B60T8/32B60T13/662B60T13/741B60T13/746F16D55/226F16D65/18F16D2121/02F16D2121/24F16D2123/00
    • A vehicle brake system having a hydraulically actuable disc brake device which has an electromechanical actuating device for activating a parking brake function, wherein the vehicle brake system has a hydraulic circuit with a hydraulic pressure source and actuable hydraulic functional elements, in order to hydraulically actuate the disc brake device in accordance with a service brake action of a driver or an automatic activation of a driving assistance system, wherein, furthermore, the vehicle brake system has a control device, in order to actuate the electromechanical actuating device in accordance with a parking brake action of the driver or an automatic activation of the parking brake function. In order to avoid abrupt release of the parking brake function, it is provided here that the control device is configured for actuating at least one of the hydraulic functional elements in such a way that, in order to release the parking brake function, a hydraulic fluid volume is isolated in the disc brake device by actuation of the electromechanical actuating device and the hydraulic fluid volume can be used to generate a predefined hydraulic pressure hydraulically during the release of the parking brake function by the electromechanical actuating device.
    • 一种具有液压可驱动的盘式制动装置的车辆制动系统,其具有用于启动驻车制动功能的机电致动装置,其中所述车辆制动系统具有具有液压源和可启动的液压功能元件的液压回路,以便液压致动 盘式制动装置,其根据驾驶员的行车制动作用或驾驶辅助系统的自动启动,此外,车辆制动系统具有控制装置,以便根据驻车制动器致动机电致动装置 驾驶员的动作或自动启动驻车制动功能。 为了避免驻车制动功能的突然释放,这里提供的是控制装置构造成用于致动至少一个液压功能元件,使得为了释放驻车制动功能,液压流体 体积通过机电致动装置的致动而隔离在盘式制动装置中,并且液压流体体积可用于在机电致动装置释放驻车制动功能期间以液压方式产生预定的液压压力。
    • 9. 发明申请
    • Vehicle Brake System for a Motor Vehicle and Method for Actuating the Vehicle Brake System During Release of the Parking Brake Function
    • 用于汽车的车辆制动系统和在停车制动功能释放期间执行车辆制动系统的方法
    • US20140144730A1
    • 2014-05-29
    • US13813304
    • 2011-07-07
    • Michael SchwarzHolger Schmidt
    • Michael SchwarzHolger Schmidt
    • B60T13/58B60T13/74
    • B60T13/588B60T7/042B60T8/32B60T13/662B60T13/741B60T13/746F16D55/226F16D65/18F16D2121/02F16D2121/24F16D2123/00
    • A vehicle brake system having a hydraulically actuable disc brake device which has an electromechanical actuating device for activating a parking brake function, wherein the vehicle brake system has a hydraulic circuit with a hydraulic pressure source and actuable hydraulic functional elements, in order to hydraulically actuate the disc brake device in accordance with a service brake action of a driver or an automatic activation of a driving assistance system, wherein, furthermore, the vehicle brake system has a control device, in order to actuate the electromechanical actuating device in accordance with a parking brake action of the driver or an automatic activation of the parking brake function. In order to avoid abrupt release of the parking brake function, it is provided here that the control device is configured for actuating at least one of the hydraulic functional elements in such a way that, in order to release the parking brake function, a hydraulic fluid volume is isolated in the disc brake device by actuation of the electromechanical actuating device and the hydraulic fluid volume can be used to generate a predefined hydraulic pressure hydraulically during the release of the parking brake function by means of the electromechanical actuating device.
    • 一种具有液压可驱动的盘式制动装置的车辆制动系统,其具有用于启动驻车制动功能的机电致动装置,其中所述车辆制动系统具有具有液压源和可启动的液压功能元件的液压回路,以便液压致动 盘式制动装置,其根据驾驶员的行车制动作用或驾驶辅助系统的自动启动,此外,车辆制动系统具有控制装置,以便根据驻车制动器致动机电致动装置 驾驶员的动作或自动启动驻车制动功能。 为了避免驻车制动功能的突然释放,这里提供的是控制装置构造成用于致动至少一个液压功能元件,使得为了释放驻车制动功能,液压流体 体积通过致动机电致动装置而在盘式制动装置中隔离,并且液压流体体积可以用于在通过机电致动装置释放驻车制动功能期间液压地产生预定的液压压力。