专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110292496A1 LASER SYSTEM WITH HIGHLY LINEAR OUTPUT 有权
标题翻译：具有高线性输出的激光系统
公开(公告)号：US20110292496A1
公开(公告)日：2011-12-01
申请号：US12993617
申请日：2010-08-19
申请人： Stefan Mohrdiek , Evgeny Zibik , Hans Ulrich Pfeiffer , Boris Sverdlov
发明人： Stefan Mohrdiek , Evgeny Zibik , Hans Ulrich Pfeiffer , Boris Sverdlov
IPC分类号： H01S3/067
CPC分类号： H01S5/147 , G02B6/262 , G02B6/30 , G02B6/4203 , H01S5/028 , H01S5/065 , H01S5/101 , H01S5/1085 , H01S2301/02
摘要： A laser device having a semiconductor gain element optically coupled to an optical fiber by using an angled anamorphic fiber lens and including a wavelength-selective front reflector. The laser device possesses improved output characteristics such as a highly linear laser emission output, even when the amplification section produces a high amount of gain. Such a laser source can also be used in various applications such as pump lasers for fiber amplifiers or frequency doubling systems.
摘要翻译：一种具有半导体增益元件的激光器件，该半导体增益元件通过使用成角度的变形光纤透镜光耦合到光纤并且包括波长选择性前反射器。即使放大部产生大量的增益，激光装置具有改进的输出特性，例如高度线性的激光发射输出。这种激光源还可用于各种应用中，例如用于光纤放大器或倍频系统的泵浦激光器。

2. 发明授权

US08831062B2 Semiconductor laser diodes 有权
标题翻译：半导体激光二极管
公开(公告)号：US08831062B2
公开(公告)日：2014-09-09
申请号：US13639833
申请日：2011-04-06
申请人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
发明人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
IPC分类号： H01S5/00 , H01S5/042 , H01S5/22 , H01S5/20 , H01S5/10 , H01S5/16
CPC分类号： H01S5/0425 , H01S5/0014 , H01S5/1039 , H01S5/1053 , H01S5/1064 , H01S5/16 , H01S5/2004 , H01S5/22
摘要： A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
摘要翻译：半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。激光二极管在n区域和p区域之间设置有有源区域，其具有前端部分和后端部分，邻近n区域的n-金属化层，并且具有用于将电流注入到第一注入器中的第一注入器有源区和与n金属化层相对并且邻近p区的p金属化层，并且具有用于将电流注入到有源区中的第二注入器。选择至少一个金属化层的厚度和/或宽度，以便与有源区域的另一部分中的电流注入相比，控制有源区域的至少一端附近的有源区域的一部分中的电流注入。至少一个金属化层的宽度大于有源区的宽度。这种布置导致在有源区域的前端附近的电流分布基本均匀。有利地，这种均匀的电流密度显着提高了激光二极管的可靠性。

3. 发明授权

US08526103B2 Laser system with highly linear output 有权
标题翻译：激光系统具有高线性输出
公开(公告)号：US08526103B2
公开(公告)日：2013-09-03
申请号：US12993617
申请日：2010-08-19
申请人： Stefan Mohrdiek , Evgeny Zibik , Hans Ulrich Pfeiffer , Boris Sverdlov
发明人： Stefan Mohrdiek , Evgeny Zibik , Hans Ulrich Pfeiffer , Boris Sverdlov
IPC分类号： H01S3/00
CPC分类号： H01S5/147 , G02B6/262 , G02B6/30 , G02B6/4203 , H01S5/028 , H01S5/065 , H01S5/101 , H01S5/1085 , H01S2301/02
摘要： A laser device having a semiconductor gain element optically coupled to an optical fiber by using an angled anamorphic fiber lens and including a wavelength-selective front reflector. The laser device possesses improved output characteristics such as a highly linear laser emission output, even when the amplification section produces a high amount of gain. Such a laser source can also be used in various applications such as pump lasers for fiber amplifiers or frequency doubling systems.
摘要翻译：一种具有半导体增益元件的激光器件，该半导体增益元件通过使用成角度的变形光纤透镜光耦合到光纤并且包括波长选择性前反射器。即使放大部产生大量的增益，激光装置具有改进的输出特性，例如高度线性的激光发射输出。这种激光源还可用于各种应用中，例如用于光纤放大器或倍频系统的泵浦激光器。

4. 发明申请

US20130070800A1 SEMICONDUCTOR LASER DIODES 有权
标题翻译：半导体激光二极管
公开(公告)号：US20130070800A1
公开(公告)日：2013-03-21
申请号：US13639833
申请日：2011-04-06
申请人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
发明人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
IPC分类号： H01S5/40 , H01L21/28
CPC分类号： H01S5/0425 , H01S5/0014 , H01S5/1039 , H01S5/1053 , H01S5/1064 , H01S5/16 , H01S5/2004 , H01S5/22
摘要： A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
摘要翻译：半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。激光二极管在n区和p区之间设置有一有源区，该区具有一前端和一后端段，n-金属化层位于邻近该n-区并具有用于将电流注入有源区和与n金属化层相对并且邻近p区的p金属化层，并且具有用于将电流注入到有源区中的第二注入器。选择至少一个金属化层的厚度和/或宽度，以便与有源区域的另一部分中的电流注入相比，控制有源区域的至少一端附近的有源区域的一部分中的电流注入。至少一个金属化层的宽度大于有源区的宽度。这种布置导致在有源区域的前端附近的电流分布基本均匀。有利地，这种均匀的电流密度显着提高了激光二极管的可靠性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式