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1. 发明授权

US08710620B2 Method of manufacturing semiconductor devices using ion implantation 有权
标题翻译：使用离子注入制造半导体器件的方法
公开(公告)号：US08710620B2
公开(公告)日：2014-04-29
申请号：US13552014
申请日：2012-07-18
申请人： Hans-Joachim Schulze , Johannes Laven , Dieter Fuchs , Werner Schustereder , Roman Knoefler
发明人： Hans-Joachim Schulze , Johannes Laven , Dieter Fuchs , Werner Schustereder , Roman Knoefler
IPC分类号： H01L21/425
CPC分类号： H01L29/0619 , H01L21/26513 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/7802 , H01L29/8611
摘要： A manufacturing method provides a semiconductor device with a substrate layer and an epitaxial layer adjoining the substrate layer. The epitaxial layer includes first columns and second columns of different conductivity types. The first and second columns extend along a main crystal direction along which channeling of implanted ions occurs from a first surface into the epitaxial layer. A vertical dopant profile of one of the first and second columns includes first portions separated by second portions. In the first portions a dopant concentration varies by at most 30%. In the second portions the dopant concentration is lower than in the first portions. The ratio of a total length of the first portions to the total length of the first and second portions is at least 50%. The uniform dopant profiles improve device characteristics.
摘要翻译：制造方法为半导体器件提供衬底层和与衬底层相邻的外延层。外延层包括不同导电类型的第一列和第二列。第一和第二列沿着主晶体方向延伸，沿着主晶体方向，注入离子的沟道从第一表面发生到外延层中。第一和第二列之一的垂直掺杂剂分布包括由第二部分分开的第一部分。在第一部分中，掺杂剂浓度变化至多30％。在第二部分中，掺杂剂浓度低于第一部分。第一部分的总长度与第一和第二部分的总长度之比至少为50％。均匀的掺杂剂分布提高了器件特性。

2. 发明申请

US20140021590A1 Method of Manufacturing Semiconductor Devices Using Ion Implantation 有权
标题翻译：使用离子注入制造半导体器件的方法
公开(公告)号：US20140021590A1
公开(公告)日：2014-01-23
申请号：US13552014
申请日：2012-07-18
申请人： Hans-Joachim Schulze , Johannes Laven , Dieter Fuchs , Werner Schustereder , Roman Knoefler
发明人： Hans-Joachim Schulze , Johannes Laven , Dieter Fuchs , Werner Schustereder , Roman Knoefler
IPC分类号： H01L29/06 , H01L21/04
CPC分类号： H01L29/0619 , H01L21/26513 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/7802 , H01L29/8611
摘要： A manufacturing method provides a semiconductor device with a substrate layer and an epitaxial layer adjoining the substrate layer. The epitaxial layer includes first columns and second columns of different conductivity types. The first and second columns extend along a main crystal direction along which channeling of implanted ions occurs from a first surface into the epitaxial layer. A vertical dopant profile of one of the first and second columns includes first portions separated by second portions. In the first portions a dopant concentration varies by at most 30%. In the second portions the dopant concentration is lower than in the first portions. The ratio of a total length of the first portions to the total length of the first and second portions is at least 50%. The uniform dopant profiles improve device characteristics.
摘要翻译：制造方法为半导体器件提供衬底层和与衬底层相邻的外延层。外延层包括不同导电类型的第一列和第二列。第一和第二列沿着主晶体方向延伸，沿着主晶体方向，注入离子的沟道从第一表面发生到外延层中。第一和第二列之一的垂直掺杂剂分布包括由第二部分分开的第一部分。在第一部分中，掺杂剂浓度变化至多30％。在第二部分中，掺杂剂浓度低于第一部分。第一部分的总长度与第一和第二部分的总长度之比至少为50％。均匀的掺杂剂分布提高了器件特性。

3. 发明申请

US20140175593A1 Super Junction Semiconductor Device 有权
标题翻译：超级结半导体器件
公开(公告)号：US20140175593A1
公开(公告)日：2014-06-26
申请号：US14189295
申请日：2014-02-25
申请人： Hans-Joachim Schulze , Johannes Laven , Dieter Fuchs , Werner Schustereder , Roman Knoefler
发明人： Hans-Joachim Schulze , Johannes Laven , Dieter Fuchs , Werner Schustereder , Roman Knoefler
IPC分类号： H01L29/06
CPC分类号： H01L29/0619 , H01L21/26513 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/7802 , H01L29/8611
摘要： A super junction semiconductor device includes a substrate layer of a first conductivity type and an epitaxial layer adjoining the substrate layer and including first columns of the first conductivity type and second columns of a second conductivity type. The first and second columns extend along a main crystal direction into the epitaxial layer and have vertical dopant profiles perpendicular to the first surface. The vertical dopant profile of at least one of the first and second columns includes first portions separated by second portions. In each of the first portions a dopant concentration varies by at most 30% of a maximum value within the respective first portion. In the second portions the dopant concentration is lower than in the adjoining first portions. A ratio of a total length of the first portions to a total length of the first and second portions is at least 50%.
摘要翻译：超结半导体器件包括第一导电类型的衬底层和邻接衬底层的外延层，并且包括第一导电类型的第一列和第二导电类型的第二列。第一和第二列沿着主晶体方向延伸到外延层中并具有垂直于第一表面的垂直掺杂物分布。第一和第二列中的至少一个的垂直掺杂剂分布包括由第二部分分开的第一部分。在每个第一部分中，掺杂剂浓度在相应的第一部分内变化最大值的30％。在第二部分中，掺杂剂浓度低于邻接的第一部分。第一部分的总长度与第一和第二部分的总长度之比至少为50％。

4. 外观设计

USD561032S1 Packaging 有权
公开(公告)号：USD561032S1
公开(公告)日：2008-02-05
申请号：US29259844
申请日：2006-05-16
申请人： Dieter Fuchs
设计人： Dieter Fuchs

5. 发明授权

US06418475B1 Medical imaging system with controlled image storage in memories 失效
标题翻译：具有受控图像存储在存储器中的医学成像系统
公开(公告)号：US06418475B1
公开(公告)日：2002-07-09
申请号：US08963245
申请日：1997-11-03
申请人： Dieter Fuchs
发明人： Dieter Fuchs
IPC分类号： G06F1516
CPC分类号： A61B6/563 , A61B5/0013 , A61B6/00 , A61B6/566 , G06F19/00 , G16H30/20
摘要： A medical imaging system has a modality for acquiring images, components for processing the images, a communication linkage for the transmission of the images and memory arrangement for storing the images with a number of separate memory systems. The memory arrangement includes a control system which causes successive image datasets to be stored in separate memory systems.
摘要翻译：医学成像系统具有用于获取图像的模式，用于处理图像的组件，用于传输图像的通信链接和用于存储具有多个单独存储器系统的图像的存储器布置。存储器装置包括一个控制系统，它将连续的图像数据集存储在分开的存储器系统中。

6. 发明授权

US5678697A Sorting installation 失效
标题翻译：排序安装
公开(公告)号：US5678697A
公开(公告)日：1997-10-21
申请号：US362522
申请日：1995-01-05
申请人： Dieter Fuchs , Wolfgang Stehle
发明人： Dieter Fuchs , Wolfgang Stehle
IPC分类号： B03B9/06 , B07B13/00 , B07C7/04
CPC分类号： B03B9/06 , B07B13/00 , Y10S209/93
摘要： A sorting installation for useful products is proposed, which serves in particular to sort out reusable packaging materials. In order to achieve the sorting-out of individual types of packaging with maximum efficiency, the sorting-out of individual monofractions is undertaken, on one or more manual sorting sections, onto a collector conveyor belt which is connected in parallel, the content of which, after sorting-out is complete, is introduced into an associated bunker.
摘要翻译： PCT No.PCT / DE94 / 00558 Sec。 371 1995年1月5日第 102（e）日期1995年1月5日PCT 1994年5月10日PCT PCT。公开号WO94 / 26429 日期1994年11月24日提出了有用产品的分拣安装，特别用于整理可重复使用的包装材料。为了以最大的效率实现对各种类型的包装的分类，在一个或多个手动分选部分上进行单独分离的分拣到并联连接的收集器输送带上，其内容物在整理完成后，被引入相关的掩体。

7. 发明授权

US4568092A Lip seal 失效
标题翻译：唇形密封
公开(公告)号：US4568092A
公开(公告)日：1986-02-04
申请号：US603522
申请日：1984-04-24
申请人： Kunimatsu Hayashida , Hermann Rapp , Dieter Fuchs
发明人： Kunimatsu Hayashida , Hermann Rapp , Dieter Fuchs
IPC分类号： F16J15/3216 , F16J15/3228 , F16J15/3244 , F16J15/3284 , F16J15/32
CPC分类号： F16J15/3284 , F16J15/3216 , F16J15/3228 , F16J15/3244
摘要： A seal comprises a disk flared to bear on a machine element to be sealed at two zones separated by an axial distance therealong has the machine element. The side of the flared disk along two hydrodynamically-acting back-feed elements which intersect each other.
摘要翻译：一个密封件包括一个盘片，该盘片被放置在一个机器元件上，该机器元件被密封在两个区域上，该两个区域沿轴向距离分开，该机器元件具有机器元沿着两个相互交叉的流体动力反馈元件的喇叭形盘的一侧。

8. 发明授权

US3988825A Method of hermetically sealing an electrical component in a metallic housing 失效
标题翻译：密封金属外壳中的电气部件的方法
公开(公告)号：US3988825A
公开(公告)日：1976-11-02
申请号：US309375
申请日：1972-11-24
申请人： Dieter Fuchs , Leopold Laber
发明人： Dieter Fuchs , Leopold Laber
IPC分类号： C03C27/02 , B23K1/14 , B23K20/00 , B23K20/02 , B23K20/16 , H01J5/32 , H01L23/045 , H04Q1/16 , H05K5/06 , H01H45/02 , H01L21/52 , H01L23/10
CPC分类号： B23K20/02 , B23K20/16 , H01J5/32 , H01L23/045 , H01L2924/16152 , Y10T29/42 , Y10T29/49105 , Y10T29/49172
摘要： A hermetically sealed electrical component. A conductor passes through a metal body member in which it is sealed by a glass-to-metal seal, extending to the electrical component. The metal body member is soldered or brazed to a support plate. A cap enclosing the component is cold pressure welded to the support plate.
摘要翻译：密封电气元件。导体穿过金属本体构件，在该金属本体构件中，导体通过玻璃对金属密封件密封，延伸到电气部件。将金属本体构件焊接或钎焊到支撑板。封闭组件的盖子被冷压焊到支撑板上。

9. 发明申请

US20070289978A1 Container 审中-公开
标题翻译：容器
公开(公告)号：US20070289978A1
公开(公告)日：2007-12-20
申请号：US11455406
申请日：2006-06-19
申请人： Dieter Fuchs
发明人： Dieter Fuchs
IPC分类号： B65D6/28
CPC分类号： B65D1/165 , B65D43/0208 , B65D2543/00092 , B65D2543/00296 , B65D2543/00407 , B65D2543/00518
摘要： The present invention relates to a container comprising a glass vessel and at least one plastic top on the glass vessel, characterised in that the glass vessel is substantially circular in cross-section and has a floor and a peripheral side wall, the upper circumferential edge of the peripheral side wall being formed as an annular bead extending outwards, and that a plurality of notches extending radially are provided on the upper circumferential edge, at least in the outer portion thereof, and that the plastic top is substantially ring-shaped with a side wall and an inner ring spaced apart from the upper and lower edges of the ring shape and having upper and lower sides, the side wall having a peripheral snap-in projection beneath the inner ring, projecting inwardly, which, when the glass vessel is connected with the plastic top, is snapped in behind the annular bead of the glass vessel, wherein rib-like lands project radially on the lower side of the inner ring in the area of the connection between the inner ring and the side wall, their number corresponding to that of the notches in the glass vessel, and which lands engage in the notches of the glass vessel when the glass vessel and the plastic top are connected.
摘要翻译：本发明涉及一种容器，其包括玻璃容器和玻璃容器上的至少一个塑料顶部，其特征在于，玻璃容器的横截面基本为圆形，并具有底板和周边侧壁，周边侧壁形成为向外延伸的环形凸缘，并且至少在其外侧部分上部圆周边缘上设置有多个沿径向延伸的凹口，并且塑料顶部大致呈环形，侧面壁和内环与环形的上边缘和下边缘间隔开并且具有上侧和下侧，该侧壁在内环下方具有向内突出的周边卡入突起，向内突出，当玻璃容器连接时塑料顶部被卡在玻璃容器的环形小珠的后面，其中肋状的台阶径向地突出在内圈的下侧，在该区域中内圈和侧壁之间的间隙，它们的数量对应于玻璃容器中的凹口的数量，并且当玻璃容器和塑料顶部连接时，它们接合玻璃容器的凹口。

10. 发明授权

US5333738A Process and installation for recovering valuable materials, in particular from waste material on building sites 失效
标题翻译：回收贵重材料的过程和安装，特别是建筑工地上的废料
公开(公告)号：US5333738A
公开(公告)日：1994-08-02
申请号：US741468
申请日：1991-10-04
申请人： Dieter Fuchs , Peter Strohhacker
发明人： Dieter Fuchs , Peter Strohhacker
IPC分类号： B65F5/00 , B03B9/06 , B07B1/38 , B07B9/00 , B07B13/11 , B07B15/00 , B09B5/00 , B65G63/00
CPC分类号： B03B9/065 , B07B9/00 , Y02W30/58 , Y10S209/925 , Y10S209/93 , Y10S209/931 , Y10S209/933 , Y10S209/935
摘要： A method is proposed for recovering valuable substances, particularly from construction site wastes and industrial trash as well as a system for implementing the method in which the essential sorters are disposed in a closed container which can be placed onto an elevated foundation. The foundation is formed by intersecting walls which simultaneously serve as partitions for various bunkers.
摘要翻译： PCT No.PCT / DE90 / 00062 Sec。 371日期1991年10月4日 102（e）日期1991年10月4日PCT 1990年10月1日PCT PCT。出版物WO90 / 08601 日期为1990年8月9日。提出了一种用于回收有价物质的方法，特别是从施工现场废物和工业垃圾中回收有价值物质的方法，以及实施将基本分选机设置在密闭容器中的方法，该密闭容器可放置在高架基础。基础由相交的墙壁形成，同时作为各种沙坑的隔板。

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