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1. 发明授权

US5537875A Ultrasonic method for the inspection of spat welds between metal plates 失效
标题翻译：用于检查金属板之间的焊缝的超声波方法
公开(公告)号：US5537875A
公开(公告)日：1996-07-23
申请号：US325316
申请日：1994-12-22
申请人： Hans Viehmann , Klaus Volkmann
发明人： Hans Viehmann , Klaus Volkmann
IPC分类号： B23K11/25 , B23K31/02 , G01N29/11 , G01N29/34 , G01N29/46 , G01N29/48 , G01N29/10
CPC分类号： B23K31/02 , B23K11/252 , G01N29/0645 , G01N29/11 , G01N29/348 , G01N29/46 , G01N29/48 , G01N2291/044 , G01N2291/2672
摘要： In the ultrasonic-inspection method proposed, a high-frequency test probe with a transducer diameter equal to the nominal diameter of the spot weld to be inspected is coupled, through an input path, with the plates in the vicinity of the spot weld and, using the pulse/echo method, the plates are irradiated with ultrasonic waves and the echo pulse trains received are evaluated. In each case, the spectral line corresponding to the overall-thickness propagation time is examined for sufficient minimum amplitude (energy density) and for sufficient minimum width (damping).
摘要翻译： PCT No.PCT / DE93 / 00343 Sec。 371日期1994年12月22日第 102（e）日期1994年12月22日PCT提交1993年4月20日PCT公布。第WO93 / 21524A PCT公开日期1993年10月28日在提出的超声检查方法中，具有等于要检查的点焊的公称直径的换能器直径的高频测试探针通过输入路径与板附近的点焊，并使用脉冲/回波法，用超声波照射板，并评估所接收的回波脉冲串。在每种情况下，检查对应于总厚度传播时间的谱线，以获得足够的最小幅度（能量密度）和足够的最小宽度（阻尼）。

2. 发明申请

US20060152970A1 METHOD AND APPARATUS FOR CURRENT SENSE AMPLIFIER CALIBRATION IN MRAM DEVICES 有权
标题翻译： MRAM器件中电流检测放大器校准的方法和装置
公开(公告)号：US20060152970A1
公开(公告)日：2006-07-13
申请号：US10905585
申请日：2005-01-12
申请人： John DeBrosse , Dietmar Gogl , Stefan Lammers , Hans Viehmann
发明人： John DeBrosse , Dietmar Gogl , Stefan Lammers , Hans Viehmann
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C29/02 , G11C29/026 , G11C29/028 , G11C2029/1204
摘要： A calibrated magnetic random access memory (MRAM) current sense amplifier includes a first plurality of trim transistors selectively configured in parallel with a first load device, the first load device associated with a data side of the sense amplifier. A second plurality of trim transistors is selectively configured in parallel with a second load device, the second load device associated with a reference side of the sense amplifier. The first and said second plurality of trim transistors are individually activated so as to compensate for device mismatch with respect to the data and reference sides of the sense amplifier.
摘要翻译：校准磁性随机存取存储器（MRAM）电流检测放大器包括与第一负载装置并联的第一多个调整晶体管，第一负载装置与读出放大器的数据侧相关联。与第二负载装置并联地选择性地配置第二组微调晶体管，第二负载装置与感测放大器的参考侧相关联。单独激活第一和第二多个微调晶体管，以补偿相对于读出放大器的数据和参考侧的器件失配。

3. 发明授权

US07239537B2 Method and apparatus for current sense amplifier calibration in MRAM devices 有权
标题翻译：用于MRAM器件中电流检测放大器校准的方法和装置
公开(公告)号：US07239537B2
公开(公告)日：2007-07-03
申请号：US10905585
申请日：2005-01-12
申请人： John K. DeBrosse , Dietmar Gogl , Stefan Lammers , Hans Viehmann
发明人： John K. DeBrosse , Dietmar Gogl , Stefan Lammers , Hans Viehmann
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C29/02 , G11C29/026 , G11C29/028 , G11C2029/1204
摘要： A calibrated magnetic random access memory (MRAM) current sense amplifier includes a first plurality of trim transistors selectively configured in parallel with a first load device, the first load device associated with a data side of the sense amplifier. A second plurality of trim transistors is selectively configured in parallel with a second load device, the second load device associated with a reference side of the sense amplifier. The first and said second plurality of trim transistors are individually activated so as to compensate for device mismatch with respect to the data and reference sides of the sense amplifier.
摘要翻译：校准磁性随机存取存储器（MRAM）电流检测放大器包括与第一负载装置并联的第一多个调整晶体管，第一负载装置与读出放大器的数据侧相关联。与第二负载装置并联地选择性地配置第二组微调晶体管，第二负载装置与感测放大器的参考侧相关联。单独激活第一和第二多个微调晶体管，以补偿相对于读出放大器的数据和参考侧的器件失配。

4. 发明授权

US06813181B1 Circuit configuration for a current switch of a bit/word line of a MRAM device 失效
标题翻译： MRAM器件的位/字线的电流开关的电路配置
公开(公告)号：US06813181B1
公开(公告)日：2004-11-02
申请号：US10445550
申请日：2003-05-27
申请人： Hans Viehmann , John K. DeBrosse
发明人： Hans Viehmann , John K. DeBrosse
IPC分类号： G11C1140
CPC分类号： G11C11/16 , G11C7/12 , G11C8/08
摘要： A circuit configuration for a current switch of a bit line or a word line of a magnetoresistive random access memory (MRAM) device, comprising a directional switch and a voltage driver that, in operation, reduces the ON resistance of the directional switch. In one embodiment, each terminal of the line is provided with such a switch.
摘要翻译：一种用于磁阻随机存取存储器（MRAM）器件的位线或字线的电流开关的电路配置，包括定向开关和电压驱动器，其在操作中降低了方向开关的导通电阻。在一个实施例中，线路的每个终端设置有这样的开关。

5. 发明授权

US06801471B2 Fuse concept and method of operation 有权
标题翻译：保险丝的概念和操作方法
公开(公告)号：US06801471B2
公开(公告)日：2004-10-05
申请号：US10079774
申请日：2002-02-19
申请人： Hans Viehmann , Heinz Hoenigschmid
发明人： Hans Viehmann , Heinz Hoenigschmid
IPC分类号： G11C1100
CPC分类号： G11C11/16 , G11C17/14 , G11C29/72 , G11C29/789
摘要： It is difficult to fabricate a semiconductor memory device without any faulty memory storage cells. One solution is to produce more storage cells than needed on a device and faulty storage cells are replaced by the redundant storage cells. This solution requires that the addresses of the faulty storage cells, along with the replacement storage cells, be saved in a memory. The present invention teaches the use of non-volatile memory cells, particularly magnetoresistive random access memory (MRAM) cells, to store the addresses. Non-volatile memory cells can effectively replace the laser fuses currently used and also provides an advantage in the elimination of the laser fuse-burning step during the fabrication of the device.
摘要翻译：难以制造半导体存储器件而没有任何错误的存储器存储单元。一种解决方案是生产比设备上所需的更多的存储单元，并且冗余存储单元被替换为故障存储单元。该解决方案要求将故障存储单元的地址与替换存储单元一起保存在存储器中。本发明教导了使用非易失性存储单元，特别是磁阻随机存取存储器（MRAM）单元来存储地址。非易失性存储单元可以有效地替代当前使用的激光熔丝，并且还在设备制造期间消除激光熔丝烧制步骤的优点。

6. 发明授权

US06498747B1 Magnetoresistive random access memory (MRAM) cross-point array with reduced parasitic effects 有权
标题翻译：具有减小的寄生效应的磁阻随机存取存储器（MRAM）交叉点阵列
公开(公告)号：US06498747B1
公开(公告)日：2002-12-24
申请号：US10068913
申请日：2002-02-08
申请人： Dietmar Gogl , Hans Viehmann
发明人： Dietmar Gogl , Hans Viehmann
IPC分类号： G11C1100
CPC分类号： G11C11/15
摘要： An architecture for a magnetoresistive random access memory (MRAM) storage cell 300 with reduced parasitic effects is presented. An additional runs of metal laid in parallel to both the wordline 310 and the bitlines 320 of the MRAM device provide a write wordline 345 and a write bitline 355 are separated from the wordline and the bitline by a dielectric layer 340 and 350 provides electrical isolation of the write currents from the magnetic stacks. The electrical isolation of the write wordline 345 and bitlines 355 reduces the parasitic capacitance, inductance, and resistance seen by the wordline and bitlines during the write operation. The wordline 310 and bitlines 320 remain as in a standard MRAM cross-point array architecture and is dedicated for reading the contents of the MRAM storage cell.
摘要翻译：提出了具有减小的寄生效应的磁阻随机存取存储器（MRAM）存储单元300的架构。与MRAM器件的字线310和位线320平行放置的金属的额外运行提供写字线345，并且写位线355与字线分离，并且位线由介电层340和350提供电隔离，来自磁栈的写入电流。写字线345和位线355的电隔离减小了在写操作期间由字线和位线看到的寄生电容，电感和电阻。字线310和位线320保持在标准MRAM交叉点阵列体系结构中，并且专用于读取MRAM存储单元的内容。

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