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    • 6. 发明授权
    • Method of producing high-quality silicon single crystals
    • 生产高品质硅单晶的方法
    • US06458204B1
    • 2002-10-01
    • US09717135
    • 2000-11-22
    • Masahiko OkuiHiroki MurakamiKazuyuki EgashiraMakoto ItoHiroshi HayakawaKelly GarretYoshinori Shirakawa
    • Masahiko OkuiHiroki MurakamiKazuyuki EgashiraMakoto ItoHiroshi HayakawaKelly GarretYoshinori Shirakawa
    • C30B1520
    • C30B29/06C30B15/203C30B15/305
    • A method of producing high-quality and large-diameter single crystals by the Czochralski method is disclosed which can provide wafers with a minimized number of such grown-in defects as dislocation clusters and laser scattering tomography defects. Specifically, it is a method of producing silicon single crystals which comprises carrying out the crystal pulling while maintaining the solid-melt interface during pulling in the shape of an upward convex with the central portion of the interface being higher by at least 5 mm than the peripheral region thereof and while applying a magnetic field, and optionally in addition to the above, while maintaining the temperature gradient in the direction of axis of pulling in the peripheral region at a level lower than that in the central portion in the range of from the melting point to 1,200° C. In this case, it is desirable that the portion of the single crystal surface lying at least 50 mm above the melt surface be shielded from direct radiant heat from the heater and/or crucible wall, that a horizontal magnetic field of 0.08 to 0.3 T be applied in parallel with the melt surface or a cusped magnetic field showing an intensity of 0.02 to 0.07 T at a crucible wall site on the melt surface be applied and that the crucible be rotated at a speed of not more than 5 min−1 and the single crystal at a speed of not less than 13 min−1.
    • 公开了通过Czochralski方法生产高质量和大直径单晶的方法,其可以为晶片提供最少数量的诸如位错簇和激光散射层析成像缺陷的这种生长缺陷。 具体地说,它是一种生产硅单晶的方法,其中包括在拉伸成呈向上凸起的形状的同时保持固溶体界面的同时进行晶体拉伸,其中界面的中心部分高​​于 并且在施加磁场的同时,并且可选地除了上述之外,同时保持在周边区域中的拉动轴线方向上的温度梯度比在中心部分的温度梯度低 熔点为1200℃。在这种情况下,希望在熔体表面上方至少50毫米的单晶表面的部分被屏蔽不受来自加热器和/或坩埚壁的直接辐射热,即水平磁 在熔融表面上的坩埚壁部位处,与熔体表面平行施加0.08〜0.3T的场,或者表示强度为0.02〜0.07T的尖细磁场b 并且坩埚以不超过5分钟-1的速度旋转,并且单晶以不小于13分钟-1的速度旋转。
    • 10. 发明申请
    • REPRODUCTION SIGNAL PROCESSING DEVICE AND VIDEO DISPLAY DEVICE
    • 生成信号处理装置和视频显示装置
    • US20100172629A1
    • 2010-07-08
    • US12066207
    • 2007-06-19
    • Yoshinori ShirakawaAkira Yamamoto
    • Yoshinori ShirakawaAkira Yamamoto
    • H04N5/95
    • G11B20/1403G11B20/10009G11B20/10037G11B20/10046G11B20/10222G11B20/10296G11B2220/2537
    • A reproduction signal processing device employing a fully digital timing recovery scheme, which obtains asynchronous digital data with the sampling clock of the A/D converter being asynchronous with the channel clock, wherein an A/D converter 102 converts the input analog signal to asynchronous digital data based on an asynchronous clock of a clock generator 103. A baseline controller 105 generates, at a pseudo-synchronous data generator 1051 therein, pseudo-synchronous data based on the asynchronous digital data from the A/D converter 102 and timing error information and a pseudo-synchronous clock from a timing detector 104. An the offset component calculator 1053 calculates an offset component for the pseudo-synchronous data, and subtracts the offset component at the subtractor 1050. Thus, the offset component contained in the asynchronous digital data is precisely removed.
    • 一种使用全数字定时恢复方案的再现信号处理装置,其获得异步数字数据,其中A / D转换器的采样时钟与信道时钟异步,其中A / D转换器102将输入的模拟信号转换为异步数字 基于时钟发生器103的异步时钟的数据。基线控制器105在其伪同步数据发生器1051中产生基于来自A / D转换器102的异步数字数据的伪同步数据和定时误差信息,以及 来自定时检测器104的伪同步时钟。偏移分量计算器1053计算伪同步数据的偏移分量,并减去减法器1050处的偏移分量。因此,包含在异步数字数据中的偏移分量是 精确删除。