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1. 发明申请

US20100053822A1 STRAM CELLS WITH AMPERE FIELD ASSISTED SWITCHING 审中-公开
标题翻译：带安培场辅助开关的STRAM电池
公开(公告)号：US20100053822A1
公开(公告)日：2010-03-04
申请号：US12200034
申请日：2008-08-28
申请人： Haiwen Xi , Paul Anderson , Zheng Gao , Xiaobin Wang , Dimitar V. Dimitrov , Song S. Xue
发明人： Haiwen Xi , Paul Anderson , Zheng Gao , Xiaobin Wang , Dimitar V. Dimitrov , Song S. Xue
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/155 , G11C11/161 , G11C11/1675
摘要： A magnetic tunnel junction cell that has a ferromagnetic pinned layer, a ferromagnetic free layer, and a non-magnetic barrier layer therebetween. The free layer has a larger area than the pinned layer, in some embodiments at least twice the size of the pinned layer, in some embodiments at least three times the size of the pinned layer, and in yet other embodiments at least four times the size of the pinned layer. The pinned layer is offset from the center of the free layer. The free layer has a changeable vortex magnetization, changeable between clockwise and counterclockwise directions.
摘要翻译：磁性隧道结电池，其具有铁磁性钉扎层，铁磁性自由层和它们之间的非磁性阻挡层。自由层具有比被钉扎层更大的面积，在一些实施例中为钉扎层的尺寸的至少两倍，在一些实施例中为被钉扎层的尺寸的至少三倍，并且在其它实施例中为至少四倍的尺寸被钉扎层。固定层从自由层的中心偏移。自由层具有可变的涡流磁化，可在顺时针和逆时针方向之间改变。

2. 发明授权

US07826260B2 Spin-transfer torque memory self-reference read and write assist methods 有权
标题翻译：自转转矩存储器自参考读写辅助方法
公开(公告)号：US07826260B2
公开(公告)日：2010-11-02
申请号：US12372180
申请日：2009-02-17
申请人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
发明人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/1659 , G11C11/1673
摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell, the magnetic field rotates the magnetization orientation of the free magnetic layer without switching a resistance state of the magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.
摘要翻译：描述了自旋转移力矩存储装置和自参考读和写辅助方案。读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并存储第一位线读取电压。通过自由磁性层施加磁场，形成磁场修正的磁性隧道结数据单元，磁场使自由磁性层的磁化方向旋转而不转换磁性隧道结数据单元的电阻状态。然后通过形成第二位线读取电压的磁场修改的磁性隧道结数据单元施加第二读取电流，并且存储位线读取电压并将其与第一位线读取电压进行比较，以确定第一电阻状态磁隧道结数据单元是高电阻状态或低电阻状态。还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

3. 发明申请

US20100103728A1 SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS 有权
标题翻译：转子转矩记忆自读参考读写方法
公开(公告)号：US20100103728A1
公开(公告)日：2010-04-29
申请号：US12372180
申请日：2009-02-17
申请人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
发明人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
IPC分类号： G11C11/14 , G11C11/416 , G11C7/00
CPC分类号： G11C11/1675 , G11C11/1659 , G11C11/1673
摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell, the magnetic field rotates the magnetization orientation of the free magnetic layer without switching a resistance state of the magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.
摘要翻译：描述了自旋转移力矩存储装置和自参考读和写辅助方案。读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并存储第一位线读取电压。通过自由磁性层施加磁场，形成磁场修正的磁性隧道结数据单元，磁场使自由磁性层的磁化方向旋转而不转换磁性隧道结数据单元的电阻状态。然后通过形成第二位线读取电压的磁场修改的磁性隧道结数据单元施加第二读取电流，并且存储位线读取电压并将其与第一位线读取电压进行比较，以确定第一电阻状态磁隧道结数据单元是高电阻状态或低电阻状态。还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

4. 发明申请

US20110026317A1 SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS 有权
标题翻译：转子转矩记忆自读参考读写方法
公开(公告)号：US20110026317A1
公开(公告)日：2011-02-03
申请号：US12903305
申请日：2010-10-13
申请人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
发明人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659 , G11C11/1673
摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.
摘要翻译：描述了自旋转移力矩存储装置和自参考读和写辅助方案。读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。通过自由磁层施加磁场，形成磁场修正磁隧道结数据单元。然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流，并与第一位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是否为高电阻状态或低电阻状态。还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

5. 发明授权

US07961509B2 Spin-transfer torque memory self-reference read and write assist methods 有权
标题翻译：自转转矩存储器自参考读写辅助方法
公开(公告)号：US07961509B2
公开(公告)日：2011-06-14
申请号：US12903305
申请日：2010-10-13
申请人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
发明人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/1659 , G11C11/1673
摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.
摘要翻译：描述了自旋转移力矩存储装置和自参考读和写辅助方案。读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。通过自由磁层施加磁场，形成磁场修正磁隧道结数据单元。然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流，并与第一位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是否为高电阻状态或低电阻状态。还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

6. 发明申请

US20100091564A1 MAGNETIC STACK HAVING REDUCED SWITCHING CURRENT 审中-公开
标题翻译：具有降低开关电流的磁性堆栈
公开(公告)号：US20100091564A1
公开(公告)日：2010-04-15
申请号：US12425457
申请日：2009-04-17
申请人： Zheng Gao , Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov
发明人： Zheng Gao , Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov
IPC分类号： G11C11/14 , H01L29/82 , G11C11/416
CPC分类号： H01L27/222 , B82Y25/00 , G11C11/16 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A magnetic stack having a ferromagnetic free layer, a ferromagnetic pinned reference layer, a non-magnetic spacer layer between the free layer and the reference layer, and a variable layer proximate the free layer. The variable layer is antiferromagnetic at a first temperature and paramagnetic at a second temperature higher than the first temperature. During a writing process, the variable layer is paramagnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the variable layer provides reduced switching currents.
摘要翻译：具有铁磁性自由层，铁磁性固定参考层，自由层和参考层之间的非磁性间隔层的磁性堆叠以及靠近自由层的可变层。可变层在第一温度下为反铁磁性，并且在高于第一温度的第二温度下为顺磁性。在写入过程中，可变层是顺磁性的。对于诸如磁性隧道结电池的磁存储器单元，可变层提供降低的开关电流。

7. 发明申请

US20090185315A1 MAGNETIC SENSOR INCLUDING A FREE LAYER HAVING PERPENDICULAR TO THE PLANE ANISOTROPY 有权
标题翻译：磁性传感器，包括一个具有平板电脑平台的自由层
公开(公告)号：US20090185315A1
公开(公告)日：2009-07-23
申请号：US12017822
申请日：2008-01-22
申请人： Song S. Xue , Zheng Gao , Shaoping Li , Kaizhong Gao , Dimitar V. Dimitrov , Konstantin Nikolaev , Patrick J. Ryan
发明人： Song S. Xue , Zheng Gao , Shaoping Li , Kaizhong Gao , Dimitar V. Dimitrov , Konstantin Nikolaev , Patrick J. Ryan
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.
摘要翻译：磁传感器包括具有第一磁化方向的参考层和具有基本上垂直于第一磁化方向并且基本上垂直于自由层组件的每个层的平面的有效磁化方向的自由层组件。间隔层位于参考层和自由层之间，信号增强层与隔离层相对的一侧交换耦合到自由层组件。

8. 发明授权

US08335058B2 Magnetic sensor including a free layer having perpendicular to the plane anisotropy 有权
标题翻译：磁传感器包括垂直于平面各向异性的自由层
公开(公告)号：US08335058B2
公开(公告)日：2012-12-18
申请号：US13048521
申请日：2011-03-15
申请人： Song S. Xue , Zheng Gao , Shaoping Li , Kaizhong Gao , Dimitar V. Dimitrov , Konstantin Nikolaev , Patrick J. Ryan
发明人： Song S. Xue , Zheng Gao , Shaoping Li , Kaizhong Gao , Dimitar V. Dimitrov , Konstantin Nikolaev , Patrick J. Ryan
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.
摘要翻译：磁传感器包括具有第一磁化方向的参考层和具有基本上垂直于第一磁化方向并且基本上垂直于自由层组件的每个层的平面的有效磁化方向的自由层组件。间隔层位于参考层和自由层之间，信号增强层与隔离层相对的一侧交换耦合到自由层组件。

9. 发明授权

US07929258B2 Magnetic sensor including a free layer having perpendicular to the plane anisotropy 有权
标题翻译：磁传感器包括垂直于平面各向异性的自由层
公开(公告)号：US07929258B2
公开(公告)日：2011-04-19
申请号：US12017822
申请日：2008-01-22
申请人： Song S. Xue , Zheng Gao , Shaoping Li , Kaizhong Gao , Dimitar V. Dimitrov , Konstantin Nikolaev , Patrick J. Ryan
发明人： Song S. Xue , Zheng Gao , Shaoping Li , Kaizhong Gao , Dimitar V. Dimitrov , Konstantin Nikolaev , Patrick J. Ryan
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.
摘要翻译：磁传感器包括具有第一磁化方向的参考层和具有基本上垂直于第一磁化方向并且基本上垂直于自由层组件的每个层的平面的有效磁化方向的自由层组件。间隔层位于参考层和自由层之间，信号增强层与隔离层相对的一侧交换耦合到自由层组件。

10. 发明申请

US20090174968A1 MAGNETIC SENSING DEVICE WITH REDUCED SHIELD-TO-SHIELD SPACING 有权
标题翻译：具有减小的屏蔽到屏蔽间隔的磁感测装置
公开(公告)号：US20090174968A1
公开(公告)日：2009-07-09
申请号：US11971664
申请日：2008-01-09
申请人： Eric W. Singleton , Qing He , Jae-Young Yi , Matt Johnson , Zheng Gao , Dimitar V. Dimitrov , Song S. Xue
发明人： Eric W. Singleton , Qing He , Jae-Young Yi , Matt Johnson , Zheng Gao , Dimitar V. Dimitrov , Song S. Xue
IPC分类号： G11B5/33
CPC分类号： G01R33/0052 , B82Y25/00 , G01R33/0076 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/398
摘要： A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.
摘要翻译：磁传感器组件包括由磁性材料构成的第一和第二屏蔽件。第一和第二屏蔽层定义物理屏蔽间隔。传感器堆叠设置在第一和第二屏蔽之间，并且包括邻近第一屏蔽的晶种层，与第二屏蔽相邻的盖层，以及种子层和盖层之间的磁传感器。种子层和/或盖层的至少一部分包括磁性材料，以提供小于物理屏蔽 - 屏蔽间隔的磁性传感器组件的有效的屏蔽到屏蔽间隔。

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