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1. 发明申请

US20130153744A1 MOUNTING BRACKET FOR AIR CONDITIONER 审中-公开
标题翻译：空调安装支架
公开(公告)号：US20130153744A1
公开(公告)日：2013-06-20
申请号：US13330046
申请日：2011-12-19
申请人： Haibing Jin , Zhigang Gu , Jianjun Cao , Xudong Zhang
发明人： Haibing Jin , Zhigang Gu , Jianjun Cao , Xudong Zhang
IPC分类号： F16M13/02
CPC分类号： F24F13/32
摘要： It is disclosed an mounting bracket for air conditioner including a supporting bottom bracket and a mounting standing bracket; wherein the mounting standing bracket includes a standing bracket fixing portion and a standing bracket sliding portion which are slidably connected with each other to form a frame structure, and the supporting bottom bracket is hinged with the standing bracket fixing portion. The mounting bracket further includes a connecting rod which is a telescopic rod with one end thereof connecting to the standing bracket fixing portion and the other end thereof connecting to the supporting bottom bracket. The air conditioner is supported by the supporting bottom bracket and is fixed by the mounting standing bracket into the mounting bracket, and then the mounting bracket is fixed on the window to support and fix the air conditioner.
摘要翻译：公开了一种用于空调的安装支架，包括支撑底托和安装支架; 其特征在于，所述安装支架支架包括立起支架固定部和支架滑动部，所述支架固定部与所述支架滑动部彼此滑动连接以形成框架结构，所述支撑底托与所述支架固定部铰接。安装支架还包括连杆，该连杆是伸缩杆，其一端连接到支架固定部分，而另一端连接到支撑底托架。空调由支撑底托支撑，并通过安装支架固定在安装支架上，然后将安装支架固定在窗户上，以支撑和固定空调。

2. 发明授权

US09076852B2 III nitride power device with reduced QGD 有权
标题翻译： III型氮化物功率器件具有降低的QGD
公开(公告)号：US09076852B2
公开(公告)日：2015-07-07
申请号：US12009045
申请日：2008-01-16
申请人： Jianjun Cao , Sadiki Jordan
发明人： Jianjun Cao , Sadiki Jordan
IPC分类号： H01L29/66 , H01L29/78 , H01L29/778 , H01L29/423 , H01L29/20
CPC分类号： H01L29/66462 , H01L21/0254 , H01L21/3212 , H01L29/2003 , H01L29/205 , H01L29/4232 , H01L29/7786
摘要： A III-nitride power switch that includes a III-nitride heterojunction, field dielectric bodies disposed over the heterojunction, and either gate conductive bodies that do not overlap the top surface of the field dielectric bodies or power contacts that do not overlap field dielectric bodies or both.
摘要翻译： III族氮化物功率开关，其包括III族氮化物异质结，设置在异质结上的场介电体，以及不与现场电介质体的顶表面或不与现场电介质体重叠的电源触点重叠的栅极导体，都。

3. 发明授权

US08785974B2 Bumped, self-isolated GaN transistor chip with electrically isolated back surface 有权
标题翻译：具有电隔离背表面的自爆隔离GaN晶体管芯片
公开(公告)号：US08785974B2
公开(公告)日：2014-07-22
申请号：US12756975
申请日：2010-04-08
申请人： Alexander Lidow , Robert Beach , Alana Nakata , Jianjun Cao
发明人： Alexander Lidow , Robert Beach , Alana Nakata , Jianjun Cao
IPC分类号： H01L29/772 , H01L23/367
CPC分类号： H01L23/3192 , H01L23/3178 , H01L23/367 , H01L23/3672 , H01L24/13 , H01L24/16 , H01L29/0657 , H01L29/205 , H01L29/267 , H01L29/41725 , H01L29/7787 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/73253 , H01L2924/00014 , H01L2924/10253 , H01L2224/05599 , H01L2224/05099
摘要： A semiconductor device comprising a silicon substrate, a compound semiconductor material, an insulating material between the silicon substrate and the compound semiconductor material, and a top surface comprising means of electrical connection, and passivation material, where the passivation material is silicon nitride, silicon dioxide, or a combination of both. The present invention eliminates the need for a thick electrical insulator between a heat sink and the back surface of a surface mounted device by the inclusion of an AlN seed layer to electrically isolate the silicon substrate of the device. The sidewalls of the device are also electrically isolated from the active area of the device.
摘要翻译：一种半导体器件，包括硅衬底，化合物半导体材料，硅衬底和化合物半导体材料之间的绝缘材料，以及包括电连接装置的顶表面和钝化材料，其中钝化材料是氮化硅，二氧化硅，或两者的组合。本发明通过包含AlN晶种层来电绝缘器件的硅衬底，消除了散热器与表面安装器件背面之间的厚电绝缘体的需要。器件的侧壁也与器件的有源区域电隔离。

4. 发明授权

US08404508B2 Enhancement mode GaN HEMT device and method for fabricating the same 有权
标题翻译：增强型GaN HEMT器件及其制造方法
公开(公告)号：US08404508B2
公开(公告)日：2013-03-26
申请号：US12756960
申请日：2010-04-08
申请人： Alexander Lidow , Robert Beach , Alana Nakata , Jianjun Cao , Guang Yuan Zhao
发明人： Alexander Lidow , Robert Beach , Alana Nakata , Jianjun Cao , Guang Yuan Zhao
IPC分类号： H01L21/00
CPC分类号： H01L29/778 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/66462 , H01L29/7786
摘要： An enhancement-mode GaN transistor and a method of forming it. The enhancement-mode GaN transistor includes a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate III-V compound containing acceptor type dopant elements, and a gate metal, where the gate III-V compound and the gate metal are formed with a single photo mask process to be self-aligned and the bottom of the gate metal and the top of the gate compound have the same dimension. The enhancement mode GaN transistor may also have a field plate made of Ohmic metal, where a drain Ohmic metal, a source Ohmic metal, and the field plate are formed by a single photo mask process.
摘要翻译：一种增强型GaN晶体管及其形成方法。增强型GaN晶体管包括衬底，过渡层，由III氮化物材料构成的缓冲层，由III氮化物材料构成的阻挡层，漏极和源极接触，含有受体型掺杂剂元素的栅III-V族化合物，和栅极金属，其中栅极III-V化合物和栅极金属形成有单独的光掩模工艺以进行自对准，并且栅极金属的底部和栅极化合物的顶部具有相同的尺寸。增强型GaN晶体管还可以具有由欧姆金属制成的场板，其中通过单个光掩模工艺形成漏极欧姆金属，源欧姆金属和场板。

5. 发明授权

US08338861B2 III-nitride semiconductor device with stepped gate trench and process for its manufacture 有权
标题翻译：具有阶梯式栅极沟槽的III族氮化物半导体器件及其制造方法
公开(公告)号：US08338861B2
公开(公告)日：2012-12-25
申请号：US12008190
申请日：2008-01-09
申请人： Michael A. Briere , Paul Bridger , Jianjun Cao
发明人： Michael A. Briere , Paul Bridger , Jianjun Cao
IPC分类号： H01L29/66
CPC分类号： H01L29/778 , H01L21/28264 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/42376 , H01L29/51 , H01L29/66431 , H01L29/66462 , H01L29/66477 , H01L29/7787 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A III-nitride heterojunction power semiconductor device that includes a passivation body with a gate well having a top mouth that is wider than the bottom mouth thereof, and a method of fabrication for the same.
摘要翻译：一种III族氮化物异质结功率半导体器件及其制造方法，其包括具有栅极阱的钝化体，其具有比其底部口宽的顶部口。

6. 发明申请

US20120175631A1 ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：具有隔栅的增强型GaN HEMT器件及其制造方法
公开(公告)号：US20120175631A1
公开(公告)日：2012-07-12
申请号：US13403400
申请日：2012-02-23
申请人： Alexander Lidow , Robert Beach , Alana Nakata , Jianjun Cao , Guang Yuan Zhao , Robert Strittmatter , Fang Chang Liu
发明人： Alexander Lidow , Robert Beach , Alana Nakata , Jianjun Cao , Guang Yuan Zhao , Robert Strittmatter , Fang Chang Liu
IPC分类号： H01L29/778 , H01L21/335 , H01L29/205
CPC分类号： H01L21/0254 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/66462 , H01L29/7786 , H01L33/007
摘要： Enhancement-mode GaN devices having a gate spacer, a gate metal material and a gate compound that are self-aligned, and a methods of forming the same. The materials are patterned and etched using a single photo mask, which reduces manufacturing costs. An interface of the gate spacer and the gate compound has lower leakage than the interface of a dielectric film and the gate compound, thereby reducing gate leakage. In addition, an ohmic contact metal layer is used as a field plate to relieve the electric field at a doped III-V gate compound corner towards the drain contact, which leads to lower gate leakage current and improved gate reliability.
摘要翻译：具有栅极间隔物，栅极金属材料和自对准的栅极化合物的增强型GaN器件及其形成方法。使用单个光掩模对材料进行图案化和蚀刻，这降低了制造成本。栅极间隔物和栅极化合物的界面比电介质膜和栅极化合物的界面具有更低的泄漏，从而减少栅极泄漏。此外，使用欧姆接触金属层作为场板，以减轻掺杂III-V栅极化合物角向漏极接触的电场，这导致较低的栅极漏电流和改善的栅极可靠性。

7. 发明申请

US20120153300A1 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION 有权
标题翻译：具有背表面隔离的半导体器件
公开(公告)号：US20120153300A1
公开(公告)日：2012-06-21
申请号：US13325735
申请日：2011-12-14
申请人： Alexander Lidow , Jianjun Cao , Robert Beach , Johan Strydom , Alana Nakata , Guang Y. Zhao
发明人： Alexander Lidow , Jianjun Cao , Robert Beach , Johan Strydom , Alana Nakata , Guang Y. Zhao
IPC分类号： H01L29/16 , H01L21/76 , H01L29/20
CPC分类号： H01L21/743 , H01L21/761 , H01L21/76283 , H01L21/8252 , H01L21/8258 , H01L23/535 , H01L27/0605 , H01L27/0688 , H01L27/085 , H01L29/1075 , H01L29/2003 , H01L29/41766 , H01L29/732 , H01L29/7786 , H01L29/7787 , H01L29/7827 , H01L29/88 , H01L2924/0002 , H01L2924/00
摘要： Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.
摘要翻译：用于将半导体器件的一部分中的周围材料独立地连接到其相应器件的触点的电路，结构和技术。为了实现这一点，提供了以至少一个偏置极性电隔离的一个或多个导电阱的组合。

8. 发明申请

US20090189187A1 Active area shaping for Ill-nitride device and process for its manufacture 有权
标题翻译：用于III族氮化物器件的有源区域成形及其制造方法
公开(公告)号：US20090189187A1
公开(公告)日：2009-07-30
申请号：US12008190
申请日：2008-01-09
申请人： Michael A. Briere , Paul Bridger , Jianjun Cao
发明人： Michael A. Briere , Paul Bridger , Jianjun Cao
IPC分类号： H01L29/205 , H01L21/336
CPC分类号： H01L29/778 , H01L21/28264 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/42376 , H01L29/51 , H01L29/66431 , H01L29/66462 , H01L29/66477 , H01L29/7787 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A III-nitride heterojunction power semiconductor device that includes a passivation body with a gate well having a top mouth that is wider than the bottom mouth thereof, and a method of fabrication for the same.
摘要翻译：一种III族氮化物异质结功率半导体器件及其制造方法，其包括具有栅极阱的钝化体，其具有比其底部口宽的顶部口。

9. 发明申请

US20080173897A1 III nitride power device with reduced QGD 有权
标题翻译： III型氮化物功率器件具有降低的QGD
公开(公告)号：US20080173897A1
公开(公告)日：2008-07-24
申请号：US12009045
申请日：2008-01-16
申请人： Jianjun Cao , Sadiki Jordan
发明人： Jianjun Cao , Sadiki Jordan
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/66462 , H01L21/0254 , H01L21/3212 , H01L29/2003 , H01L29/205 , H01L29/4232 , H01L29/7786
摘要： A III-nitride power switch that includes a III-nitride heterojunction, field dielectric bodies disposed over the heterojunction, and either gate conductive bodies that do not overlap the top surface of the field dielectric bodies or power contacts that do not overlap field dielectric bodies or both.
摘要翻译： III族氮化物功率开关，其包括III族氮化物异质结，设置在异质结上的场介电体，以及不与现场电介质体的顶表面或不与现场电介质体重叠的电源触点重叠的栅极导体，都。

10. 发明申请

US20050174823A1 Current sense trench type MOSFET with improved accuracy and ESD withstand capability 有权
标题翻译：电流检测沟槽型MOSFET具有改进的精度和ESD承受能力
公开(公告)号：US20050174823A1
公开(公告)日：2005-08-11
申请号：US11066178
申请日：2005-01-31
申请人： Jianjun Cao , Ying Xiao , Kyle Spring , Daniel Kinzer
发明人： Jianjun Cao , Ying Xiao , Kyle Spring , Daniel Kinzer
IPC分类号： G11C5/02 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/78
CPC分类号： H01L29/7815 , H01L29/0696 , H01L29/0847 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4232 , H01L29/4238 , H01L29/7811 , H01L29/7813
摘要： The active area of a current sense die is surrounded by a transition region which extends to the terminating periphery of the die. Spaced parallel MOSgated trenches extend through and define an active area. The trench positions in the transition region are eliminated or are deactivated, as by shorting to the MOSFET source of the trench, or by removing the source regions in areas of the transition region. By inactivating MOSgate action in the transition region surrounding the source, the device is made less sensitive to current ratio variation due to varying manufacturing tolerances. The gate to source capacitance is increased by surrounding the active area with an enlarged P+ field region which is at least five times the area of the active region, thereby to make the device less sensitive to ESD failure.
摘要翻译：电流感测管芯的有源区域被延伸到管芯的端部周边的过渡区域包围。间距平行的MOS沟槽延伸通过并定义有效区域。过渡区域中的沟槽位置被消除或被去激活，如通过短路到MOSFET的MOSFET源，或者通过去除过渡区域的区域中的源极区域。通过使围绕源极的过渡区域中的MOSgate动作失效，由于变化的制造公差，该器件对电流比率变化的敏感度较低。栅极到源极电容通过围绕有源区域而增加，其具有至少是有源区域面积的五倍的扩大的P + SUPER场区域，从而使得该器件对ESD故障较不敏感。

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