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1. 发明申请

US20110049720A1 Refractory metal nitride capped electrical contact and method for frabricating same 有权
$Refractory metal nitride capped electrical contact and method for frabricating same$
标题翻译：耐火金属氮化物封盖电接点及其制作方法
公开(公告)号：US20110049720A1
公开(公告)日：2011-03-03
申请号：US12583809
申请日：2009-08-25
申请人： Sadiki Jordan
发明人： Sadiki Jordan
IPC分类号： H01L23/482 , H01L21/28
CPC分类号： H01L21/28581 , H01L21/28575 , H01L29/2003 , H01L29/401 , H01L29/452 , H01L29/4958 , H01L29/778 , H01L29/7787
摘要： According to one disclosed embodiment, an electrical contact for use on a semiconductor device comprises an electrode stack including a plurality of metal layers and a capping layer formed over the plurality of metal layers. The capping layer comprises a refractory metal nitride. In one embodiment, a method for fabricating an electrical contact for use on a semiconductor device comprises forming an electrode stack including a plurality of metal layers over the semiconductor device, and depositing a refractory metal nitride capping layer of the electrode stack over the plurality of metal layers. The method may further comprise annealing the electrode stack at a temperature of less than approximately 875° C. In some embodiments, the method may additionally include forming one of a Schottky metal layer and a gate insulator layer between the electrode stack and the semiconductor device.
摘要翻译：根据一个公开的实施例，在半导体器件上使用的电触点包括包括多个金属层的电极堆叠和形成在多个金属层上的覆盖层。覆盖层包括难熔金属氮化物。在一个实施例中，制造用于半导体器件的电触点的方法包括在半导体器件上形成包括多个金属层的电极堆叠，并且在多个金属上沉积电极堆叠的难熔金属氮化物覆盖层层。该方法还可以包括在小于约875℃的温度下对电极堆叠进行退火。在一些实施例中，该方法还可以包括在电极堆叠和半导体器件之间形成肖特基金属层和栅极绝缘体层之一。

2. 发明授权

US09076852B2 III nitride power device with reduced QGD 有权
标题翻译： III型氮化物功率器件具有降低的QGD
公开(公告)号：US09076852B2
公开(公告)日：2015-07-07
申请号：US12009045
申请日：2008-01-16
申请人： Jianjun Cao , Sadiki Jordan
发明人： Jianjun Cao , Sadiki Jordan
IPC分类号： H01L29/66 , H01L29/78 , H01L29/778 , H01L29/423 , H01L29/20
CPC分类号： H01L29/66462 , H01L21/0254 , H01L21/3212 , H01L29/2003 , H01L29/205 , H01L29/4232 , H01L29/7786
摘要： A III-nitride power switch that includes a III-nitride heterojunction, field dielectric bodies disposed over the heterojunction, and either gate conductive bodies that do not overlap the top surface of the field dielectric bodies or power contacts that do not overlap field dielectric bodies or both.
摘要翻译： III族氮化物功率开关，其包括III族氮化物异质结，设置在异质结上的场介电体，以及不与现场电介质体的顶表面或不与现场电介质体重叠的电源触点重叠的栅极导体，都。

3. 发明申请

US20080173897A1 III nitride power device with reduced QGD 有权
标题翻译： III型氮化物功率器件具有降低的QGD
公开(公告)号：US20080173897A1
公开(公告)日：2008-07-24
申请号：US12009045
申请日：2008-01-16
申请人： Jianjun Cao , Sadiki Jordan
发明人： Jianjun Cao , Sadiki Jordan
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/66462 , H01L21/0254 , H01L21/3212 , H01L29/2003 , H01L29/205 , H01L29/4232 , H01L29/7786
摘要： A III-nitride power switch that includes a III-nitride heterojunction, field dielectric bodies disposed over the heterojunction, and either gate conductive bodies that do not overlap the top surface of the field dielectric bodies or power contacts that do not overlap field dielectric bodies or both.
摘要翻译： III族氮化物功率开关，其包括III族氮化物异质结，设置在异质结上的场介电体，以及不与现场电介质体的顶表面或不与现场电介质体重叠的电源触点重叠的栅极导体，都。

4. 发明授权

US08686562B2 Refractory metal nitride capped electrical contact and method for frabricating same 有权
$Refractory metal nitride capped electrical contact and method for frabricating same$
标题翻译：耐火金属氮化物封盖电接点及其制作方法
公开(公告)号：US08686562B2
公开(公告)日：2014-04-01
申请号：US12583809
申请日：2009-08-25
申请人： Sadiki Jordan
发明人： Sadiki Jordan
IPC分类号： H01L29/72
CPC分类号： H01L21/28581 , H01L21/28575 , H01L29/2003 , H01L29/401 , H01L29/452 , H01L29/4958 , H01L29/778 , H01L29/7787
摘要： According to one disclosed embodiment, an electrical contact for use on a semiconductor device comprises an electrode stack including a plurality of metal layers and a capping layer formed over the plurality of metal layers. The capping layer comprises a refractory metal nitride. In one embodiment, a method for fabricating an electrical contact for use on a semiconductor device comprises forming an electrode stack including a plurality of metal layers over the semiconductor device, and depositing a refractory metal nitride capping layer of the electrode stack over the plurality of metal layers. The method may further comprise annealing the electrode stack at a temperature of less than approximately 875° C. In some embodiments, the method may additionally include forming one of a Schottky metal layer and a gate insulator layer between the electrode stack and the semiconductor device.
摘要翻译：根据一个公开的实施例，在半导体器件上使用的电触点包括包括多个金属层的电极堆叠和形成在多个金属层上的覆盖层。覆盖层包括难熔金属氮化物。在一个实施例中，制造用于半导体器件的电触点的方法包括在半导体器件上形成包括多个金属层的电极堆叠，以及在多个金属上沉积电极堆叠的难熔金属氮化物覆盖层层。该方法还可以包括在小于约875℃的温度下对电极堆叠进行退火。在一些实施例中，该方法还可以包括在电极堆叠和半导体器件之间形成肖特基金属层和栅极绝缘体层之一。

5. 发明申请

US20100006895A1 III-NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译： III-NITRIDE半导体器件
公开(公告)号：US20100006895A1
公开(公告)日：2010-01-14
申请号：US12351967
申请日：2009-01-12
申请人： Jianjun Cao , Robert Beach , Sadiki Jordan
发明人： Jianjun Cao , Robert Beach , Sadiki Jordan
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7786 , H01L29/2003
摘要： A III-nitride power switch that includes a III-nitride heterojunction, field dielectric bodies disposed over the heterojunction, and a gate electrode that does not overlap the top surface of the field dielectric bodies and is disposed over a well in the III-nitride heterojunction.
摘要翻译： III族氮化物电源开关，其包括III族氮化物异质结，设置在异质结上的场电介质体，以及栅电极，其不与场介电体的顶表面重叠并且设置在III族氮化物异质结中的阱上。

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