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1. 发明申请

US20110148132A1 Industrial gripper with multiple degrees of freedom 有权
标题翻译：工业夹具具有多个自由度
公开(公告)号：US20110148132A1
公开(公告)日：2011-06-23
申请号：US12926869
申请日：2010-12-14
申请人： Hahn Park , Sung Wook Jung , Jae Chul Hwang , Yong Won Choi
发明人： Hahn Park , Sung Wook Jung , Jae Chul Hwang , Yong Won Choi
IPC分类号： B25J15/10
CPC分类号： B25J15/10 , B25J15/0266
摘要： An industrial gripper includes a base plate, at least three finger units to be moved relative to the base plate, a supporting unit to support the finger units, a first drive unit coupled to the supporting unit to allow simultaneous angular displacement of the finger units toward an object, and a second drive unit coupled to the supporting unit to adjust orientation angles between the finger units. Each of the finger units includes an intermediation member to be moved in a first direction by the first drive unit, a grip member to grip the object by being moved in a second direction different from the first direction as a movement direction of the intermediation member, and a connection member to convert the first direction movement of the intermediation member into the second direction movement of the grip member.
摘要翻译：工业夹持器包括基板，至少三个相对于基板移动的指状单元，支撑单元以支撑指状单元;耦合到支撑单元的第一驱动单元，以允许手指单元朝向物体和耦合到支撑单元的第二驱动单元，以调节指状单元之间的取向角度。每个指状单元包括通过第一驱动单元沿第一方向移动的中间构件，夹持构件，用于通过沿与中间构件的移动方向不同的第一方向的第二方向移动来夹持物体，以及连接构件，用于将中介构件的第一方向运动转换成握持构件的第二方向运动。

2. 发明授权

US08424942B2 Industrial gripper with multiple degrees of freedom 有权
标题翻译：工业夹具具有多个自由度
公开(公告)号：US08424942B2
公开(公告)日：2013-04-23
申请号：US12926869
申请日：2010-12-14
申请人： Hahn Park , Sung Wook Jung , Jae Chul Hwang , Yong Won Choi
发明人： Hahn Park , Sung Wook Jung , Jae Chul Hwang , Yong Won Choi
IPC分类号： B66C1/00 , B66C1/42
CPC分类号： B25J15/10 , B25J15/0266
摘要： An industrial gripper includes a base plate, at least three finger units to be moved relative to the base plate, a supporting unit to support the finger units, a first drive unit coupled to the supporting unit to allow simultaneous angular displacement of the finger units toward an object, and a second drive unit coupled to the supporting unit to adjust orientation angles between the finger units. Each of the finger units includes an intermediation member to be moved in a first direction by the first drive unit, a grip member to grip the object by being moved in a second direction different from the first direction as a movement direction of the intermediation member, and a connection member to convert the first direction movement of the intermediation member into the second direction movement of the grip member.
摘要翻译：工业夹持器包括基板，至少三个相对于基板移动的指状单元，支撑单元以支撑指状单元;耦合到支撑单元的第一驱动单元，以允许手指单元朝向物体和耦合到支撑单元的第二驱动单元，以调节指状单元之间的取向角度。每个指状单元包括通过第一驱动单元沿第一方向移动的中间构件，夹持构件，用于通过沿与中间构件的移动方向不同的第一方向的第二方向移动来夹持物体，以及连接构件，用于将中介构件的第一方向运动转换成握持构件的第二方向运动。

3. 发明授权

US08677345B2 System for creating virtual application, method for installing virtual application, method for calling native API and method for executing virtual application 有权
标题翻译：用于创建虚拟应用程序的系统，安装虚拟应用程序的方法，调用本机API的方法和执行虚拟应用程序的方法
公开(公告)号：US08677345B2
公开(公告)日：2014-03-18
申请号：US12673684
申请日：2008-08-13
申请人： Jong Uk Choi , Dongha Shin , Sung Wook Jung , Jiyeon Kim , Muhammad Ali Malik
发明人： Jong Uk Choi , Dongha Shin , Sung Wook Jung , Jiyeon Kim , Muhammad Ali Malik
IPC分类号： G06F9/44 , G06F9/445
CPC分类号： G06F9/45537 , G06F8/61
摘要： A virtual application creating system comprises: a virtual environment library block including a plurality of modules that process native application program interfaces (APIs) of an operating system such that the native application APIs are suited to a virtual environment, finding a module capable of processing a specific native API from the plurality of modules when the specific native API is called and operating the found module; a virtual application installation block receiving position information of an application to be virtualized and information on an installation place where the application will be virtualized and installed from a user and inserting the virtual environment library block into a memory to install a virtual application in the installation place; and a virtual application execution block executing the virtual application installed in the installation place.
摘要翻译：虚拟应用创建系统包括：虚拟环境库块，其包括处理操作系统的本机应用程序接口（API）的多个模块，使得本地应用API适合于虚拟环境，找到能够处理当调用特定的本机API并操作找到的模块时，来自多个模块的特定原生API; 虚拟应用程序安装块，用于接收要虚拟化的应用程序的位置信息，以及关于应用程序将从用户虚拟化并安装的安装位置的信息，并将虚拟环境库块插入到存储器中以将虚拟应用程序安装在安装地点 ; 以及执行安装在安装地点的虚拟应用的虚拟应用执行块。

4. 发明申请

US20080301811A1 System For Stabilizing of Web Service and Method Thereof 审中-公开
标题翻译：用于稳定Web服务的系统及其方法
公开(公告)号：US20080301811A1
公开(公告)日：2008-12-04
申请号：US12158846
申请日：2007-03-09
申请人： Sung Wook Jung
发明人： Sung Wook Jung
IPC分类号： G06F21/00
CPC分类号： G06F21/554 , G06F16/958 , G06Q30/02 , G06Q30/04 , H04L63/1408 , H04L63/1458
摘要： An object of the present invention is to provide a system and method for stabilizing a web service. The system of the present invention includes a reception module unit (410) for receiving set information and cookie information. A cookie information checking module unit (420) determines whether a malicious click occurs in the visitor terminal using the cookie information and the set information. A transmission module unit (430) transmits an operation scenario to the web service server, and transmits detailed information about an abnormal visitor to the manager terminal. A database unit (440) stores the set information and the cookie information. A control module unit (450) compares the cookie information with the set information, creates new cookie information when the visitor is a first-time visitor, determines whether a malicious click occurs, and interrupts access of the visitor terminal or forcibly connects the visitor terminal to a specific site.
摘要翻译：本发明的目的是提供一种用于稳定网络服务的系统和方法。本发明的系统包括用于接收设置信息和cookie信息的接收模块单元（410）。 cookie信息检查模块单元（420）使用cookie信息和设置信息来确定在访客终端中是否发生恶意点击。传输模块单元（430）向Web服务服务器发送操作场景，并向管理终端发送关于异常访问者的详细信息。数据库单元（440）存储所设置的信息和cookie信息。控制模块单元（450）将cookie信息与设置信息进行比较，当访问者是第一次访问者时，创建新的cookie信息，确定是否发生恶意点击，并中断访问者终端的访问或强制连接访客终端到一个特定的网站。

5. 发明申请

US20110072424A1 SYSTEM FOR CREATING VIRTUAL APPLICATION, METHOD FOR INSTALLING VIRTUAL APPLICATION, METHOD FOR CALLING NATIVE API AND METHOD FOR EXECUTING VIRTUAL APPLICATION 有权
标题翻译：用于创建虚拟应用的系统，用于安装虚拟应用的方法，用于呼叫本机API的方法和用于执行虚拟应用的方法
公开(公告)号：US20110072424A1
公开(公告)日：2011-03-24
申请号：US12673684
申请日：2008-08-13
申请人： Jong Uk Choi , Dongha Shin , Sung Wook Jung , Jiyeon Kim , Muhammad Ali Malik
发明人： Jong Uk Choi , Dongha Shin , Sung Wook Jung , Jiyeon Kim , Muhammad Ali Malik
IPC分类号： G06F9/445 , G06F9/455
CPC分类号： G06F9/45537 , G06F8/61
摘要： A virtual application creating system, a virtual application installing method, a native API calling method and a virtual application executing method are disclosed. The virtual application creating system comprises a virtual environment library block including a plurality of modules that process native application program interfaces (APIs) of an operating system such that the native application APIs are suited to a virtual environment, finding a module capable of processing a specific native API from the plurality of modules when the specific native API is called and operating the found module; a virtual application installation block receiving position information of an application to be virtualized and information on an installation place where the application will be virtualized and installed from a user and inserting the virtual environment library block into a memory to install a virtual application in the installation place; and a virtual application execution block executing the virtual application installed in the installation place. Accordingly, an application selected by a user can be virtualized and installed in a position designated by the user, for example, an external storage unit, and the installed virtual application can be executed in a virtual environment independent from a host.
摘要翻译：公开了虚拟应用创建系统，虚拟应用安装方法，本地API调用方法和虚拟应用执行方法。虚拟应用创建系统包括虚拟环境库块，其包括处理操作系统的本机应用程序接口（API）的多个模块，使得本机应用API适合于虚拟环境，找到能够处理特定当调用特定本机API并操作找到的模块时，来自多个模块的本地API; 虚拟应用程序安装块，用于接收要虚拟化的应用程序的位置信息，以及关于应用程序将从用户虚拟化并安装的安装位置的信息，并将虚拟环境库块插入到存储器中以将虚拟应用程序安装在安装地点 ; 以及执行安装在安装地点的虚拟应用的虚拟应用执行块。因此，可以将由用户选择的应用程序虚拟化并安装在由用户指定的位置，例如外部存储单元中，并且可以在独立于主机的虚拟环境中执行安装的虚拟应用程序。

6. 发明授权

US07550823B2 Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same 有权
标题翻译：非易失性存储单元，其阵列，其制造方法和包括该非易失性存储单元的装置
公开(公告)号：US07550823B2
公开(公告)日：2009-06-23
申请号：US11777657
申请日：2007-07-13
申请人： Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
发明人： Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
IPC分类号： H01L23/58 , H01L23/48 , H01L23/52 , H01L29/40 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/04 , H01L29/06 , H01L21/336 , H01L21/8234
CPC分类号： H01L21/28273 , B82Y10/00 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/12 , H01L29/04 , H01L29/1037 , H01L29/42332 , H01L29/513 , H01L29/66825 , H01L29/7881 , Y10S977/72 , Y10S977/721 , Y10S977/723 , Y10S977/773 , Y10S977/774 , Y10S977/784 , Y10S977/785
摘要： A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.
摘要翻译：非易失性存储单元能够通过使用一氧化二氮等离子体形成包含氧氮化硅（SiO x N y）层的第一氧化物膜，并且通过形成多晶硅的粗糙表面而能够减少由于多晶硅的粗糙表面而导致的过大的电流泄漏，甚至在低温工艺通过离子注入法在氮化物膜上注入硅纳米晶体的氮化物膜中的多个硅纳米晶体及其制造方法和包括非易失性存储单元的存储装置。

7. 发明申请

US20080121887A1 NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD THEREOF AND MEMORY APPARATUS INCLUDING THEREOF 有权
标题翻译：非易失性存储器件及其制造方法及其存储器件
公开(公告)号：US20080121887A1
公开(公告)日：2008-05-29
申请号：US11777637
申请日：2007-07-13
申请人： Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
发明人： Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
IPC分类号： H01L29/06 , H01L21/3205
CPC分类号： H01L29/7881 , B82Y10/00 , H01L21/28273 , H01L27/12 , H01L29/04 , H01L29/1037 , H01L29/42332 , H01L29/513
摘要： A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.
摘要翻译：非易失性存储器件能够减少由多晶硅的粗糙表面引起的过大的漏电流，并且通过形成包括氮氧化硅（SiO 2）的第一氧化物膜，实现改进的阻挡功能，使用一氧化二氮（N 2 O 3）等离子体，并且通过形成富硅的氮化硅膜，以及其制造方法和包括非氧化氮（N 2 O 3）易失存储器件。此外，可以在不使用高温处理的情况下在玻璃基板上制造非易失性存储器件。

8. 发明授权

US08692701B2 Pipelined A/D converter circuit provided with A/D converter circuit parts of stages each including precharge circuit 失效
标题翻译：配有A / D转换器电路的流水线A / D转换电路各部分包括预充电电路
公开(公告)号：US08692701B2
公开(公告)日：2014-04-08
申请号：US13599195
申请日：2012-08-30
申请人： Shoji Kawahito , Sung Wook Jung , Osamu Kobayashi , Yasuhide Shimizu , Takahiro Miki , Takashi Morie , Hirotomo Ishii
发明人： Shoji Kawahito , Sung Wook Jung , Osamu Kobayashi , Yasuhide Shimizu , Takahiro Miki , Takashi Morie , Hirotomo Ishii
IPC分类号： H03M1/38
CPC分类号： H03M1/06 , H03M1/167
摘要： A pipelined A/D converter circuit includes a sample hold circuit configured to sample and hold an analog input signal, and output a sample hold signal, and an A/D converter circuit including A/D converter circuit parts connected to each other in cascade, and performs A/D conversion in a pipelined form. The pipelined A/D converter circuit part of each stage includes a sub-A/D converter circuit, a multiplier D/A converter circuit, and a precharge circuit. The sub-A/D converter circuit includes comparators, and A/D convert the input signal into a digital signal of predetermined bits, a multiplier D/A converter circuit for D/A converting the digital signal from the sub-A/D converter circuit into an analog control signal generated with a reference voltage served as a reference value, sample, hold and amplify the input signal by sampling capacitors based on the analog control signal.
摘要翻译：流水线A / D转换器电路包括：采样保持电路，被配置为采样和保持模拟输入信号，并输出采样保持信号;以及A / D转换器电路，包括级联地彼此连接的A / D转换器电路部分，并以流水线形式执行A / D转换。每级的流水线A / D转换器电路部分包括子A / D转换器电路，乘法器D / A转换器电路和预充电电路。子A / D转换电路包括比较器，A / D将输入信号转换为预定位的数字信号; D / A转换器电路，用于对来自子A / D转换器的数字信号进行D / A转换电路作为参考电压产生的模拟控制信号作为参考值，通过基于模拟控制信号的采样电容进行采样，保持和放大输入信号。

9. 发明申请

US20100148181A1 NANOCRYSTAL SILICON LAYER STRUCTURES FORMED USING PLASMA DEPOSITION TECHNIQUE, METHODS OF FORMING THE SAME, NONVOLATILE MEMORY DEVICES HAVING THE NANOCRYSTAL SILICON LAYER STRUCTURES, AND METHODS OF FABRICATING THE NONVOLATILE MEMORY DEVICES 有权
标题翻译：使用等离子体沉积技术形成的纳米结构硅层结构，其形成方法，具有纳米晶层结构的非永久性存储器件，以及制造非易失性存储器件的方法
公开(公告)号：US20100148181A1
公开(公告)日：2010-06-17
申请号：US12388846
申请日：2009-02-19
申请人： Byoung Deog Choi , Jun Sin YI , Sung Wook Jung , Kyung Soo Jang , Jae Hyun Cho
发明人： Byoung Deog Choi , Jun Sin YI , Sung Wook Jung , Kyung Soo Jang , Jae Hyun Cho
IPC分类号： H01L29/792 , H01L21/20 , H01L29/04 , H01L21/336
CPC分类号： H01L21/02532 , H01L21/02436 , H01L21/02595 , H01L21/0262 , H01L21/28282 , H01L29/04 , H01L29/6675 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.
摘要翻译：提供了使用等离子体沉积技术形成的纳米晶硅层结构，其形成方法，包括纳米晶硅层结构的非易失性存储器件以及制造非易失性存储器件的方法。形成纳米晶硅层结构的方法包括在衬底上形成缓冲层，并通过使用含硅（Si）的气体和含氢（H 2）的气体）的等离子体沉积技术在缓冲层上形成纳米晶硅层。在该方法中，可以使用等离子体气相沉积将纳米晶硅层直接沉积在玻璃基板上，而不进行后处理工艺，从而可以简化非易失性存储器件的制造，从而降低制造成本。

10. 发明授权

US07553720B2 Non-volatile memory device and fabrication method thereof 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07553720B2
公开(公告)日：2009-06-30
申请号：US11604222
申请日：2006-11-27
申请人： Byoung Deog Choi , Ki Yong Lee , Ho Kyoon Chung , Jun Sin Yi , Sung Wook Jung , Hyun Min Kim , Jun Sik Kim
发明人： Byoung Deog Choi , Ki Yong Lee , Ho Kyoon Chung , Jun Sin Yi , Sung Wook Jung , Hyun Min Kim , Jun Sik Kim
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/513
摘要： A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.
摘要翻译：非易失性存储器件包括在衬底上的缓冲氧化膜; 缓冲氧化膜上的多晶硅层; 所述多晶硅层上的硅氮化物（SiON）层，所述SiON层上的第一绝缘体层，所述第一绝缘体上的氮化物膜，所述氮化物膜上的第二绝缘体层，所述第二绝缘体上的电极和源极 /漏极在多晶硅层。

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