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1. 发明授权

US08758511B2 Film forming apparatus and vaporizer 失效
标题翻译：成膜装置和蒸发器
公开(公告)号：US08758511B2
公开(公告)日：2014-06-24
申请号：US11660091
申请日：2005-08-12
申请人： Hachishiro Iizuka , Akira Yasumuro , Koichiro Kimura , Norihiko Tsuji
发明人： Hachishiro Iizuka , Akira Yasumuro , Koichiro Kimura , Norihiko Tsuji
IPC分类号： C23C16/448 , C23C16/455 , C23C16/00 , C23C16/44 , C23C16/458
CPC分类号： C23C16/4402 , C23C16/4401 , C23C16/4486 , C23C16/45561 , C23C16/4585
摘要： A film forming apparatus including a raw material supplying section for supplying a raw material of a liquid or a gas-liquid mixture, a raw material vaporizing section for vaporizing the raw material to form a raw material gas, and a film forming section for conducting a film forming treatment using the formed raw material gas, and a filter on the transport path for the raw material gas from the raw material vaporizing section to the film forming section. An outer edge of the filter is pressed to the inner surface of the transport path over the whole perimeter thereof by a cyclic supporting member, which is less prone to be deformed by a loading in the pressing direction than the outer edge, and is fixed to the inner surface of the transport path in a compressed state between the inner surface of the transport path and the supporting member.
摘要翻译：一种成膜装置，包括用于供给液体或气液混合物的原料的原料供给部，用于蒸发原料以形成原料气体的原料蒸发部，以及用于导入使用所形成的原料气体的成膜处理，以及从原料蒸发部到成膜部的原料气体的输送路径上的过滤器。过滤器的外边缘通过循环支撑构件在其整个周边上被压靠在输送路径的内表面上，循环支撑构件通过沿着挤压方向的加载不如外边缘而变形，并被固定到传送路径的内表面处于压缩状态，在传送路径的内表面和支撑构件之间。

2. 发明申请

US20070022954A1 Gas treatment device and heat readiting method 审中-公开
标题翻译：气体处理装置和热读取方法
公开(公告)号：US20070022954A1
公开(公告)日：2007-02-01
申请号：US10570603
申请日：2004-08-30
申请人： Hachishiro Iizuka , Koichiro Kimura , Kyoko Ikeda , Tomoyuki Sakoda , Akira Yasumuro
发明人： Hachishiro Iizuka , Koichiro Kimura , Kyoko Ikeda , Tomoyuki Sakoda , Akira Yasumuro
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/455
摘要： A shower head formed by stacking a shower base, a gas diffusion plate, and a shower plate and supplying material gas and oxidizer gas to a wafer on a loading table through a first gas diffusion part and a second gas diffusion part formed in both faces of the gas diffusion plate, first gas outlets formed in the shower plate and communicating with a first gas diffusion space, and second gas outlets formed in the shower plate and communicating with a second gas diffusion space. A plurality of heat transfer columns fitted closely to the lower surface of the shower base are installed in the first gas diffusion part so that portions therebetween can form the first gas diffusion space, and radiant heat from the loading table is transmitted by the heat transfer columns in the thickness direction of the shower head.
摘要翻译：喷淋头，其通过堆叠淋浴器基座，气体扩散板和喷淋板而形成，并且通过第一气体扩散部和第二气体扩散部将第二气体扩散部和第二气体扩散部供给到装载台上的晶片，所述气体扩散板，形成在所述喷淋板中并与第一气体扩散空间连通的第一气体出口和形成在所述喷淋板中并与第二气体扩散空间连通的第二气体出口。在第一气体扩散部中安装有与淋浴器基座的下表面紧密配合的多个传热塔，使得它们之间的部分可以形成第一气体扩散空间，并且来自装载台的辐射热量通过传热塔在淋浴头的厚度方向上。

3. 外观设计

USD581012S1 Middle plate for the shower head 有权
标题翻译：中间淋浴头
公开(公告)号：USD581012S1
公开(公告)日：2008-11-18
申请号：US29226149
申请日：2005-03-24
申请人： Hachishiro Iizuka , Koichiro Kimura , Akira Yasumuro
设计人： Hachishiro Iizuka , Koichiro Kimura , Akira Yasumuro

4. 发明申请

US20070266944A1 Film Forming Apparatus and Vaporizer 失效
标题翻译：成膜装置和蒸发器
公开(公告)号：US20070266944A1
公开(公告)日：2007-11-22
申请号：US11660091
申请日：2005-08-12
申请人： Hachishiro Iizuka , Akira Yasumuro , Koichiro Kimura , Norihiko Tsuji
发明人： Hachishiro Iizuka , Akira Yasumuro , Koichiro Kimura , Norihiko Tsuji
IPC分类号： C23C16/02
CPC分类号： C23C16/4402 , C23C16/4401 , C23C16/4486 , C23C16/45561 , C23C16/4585
摘要： A film forming apparatus including a raw material supplying section for supplying a raw material of a liquid or a gas-liquid mixture, a raw material vaporizing section for vaporizing the raw material to form a raw material gas, and a film forming section for conducting a film forming treatment using the formed raw material gas, and a filter on the transport path for the raw material gas from the raw material vaporizing section to the film forming section. An outer edge of the filter is pressed to the inner surface of the transport path over the whole perimeter thereof by a cyclic supporting member, which is less prone to be deformed by a loading in the pressing direction than the outer edge, and is fixed to the inner surface of the transport path in a compressed state between the inner surface of the transport path and the supporting member.
摘要翻译：一种成膜装置，包括用于供给液体或气液混合物的原料的原料供给部，用于蒸发原料以形成原料气体的原料蒸发部，以及用于导入使用所形成的原料气体的成膜处理，以及从原料蒸发部到成膜部的原料气体的输送路径上的过滤器。过滤器的外边缘通过循环支撑构件在其整个周边上被压靠在输送路径的内表面上，循环支撑构件通过沿着挤压方向的加载不如外边缘而变形，并被固定到传送路径的内表面处于压缩状态，在传送路径的内表面和支撑构件之间。

5. 发明申请

US20070261735A1 Liquid Amount Monitoring Apparatus, Semiconductor Manufacturing Apparatus Having the Liquid Amount Monitoring Apparatus Mounted Thereon, and Liquid Material/Liquid Amount Monitoring Method 审中-公开
标题翻译：液体量监测装置，具有安装在其上的液量监测装置的半导体制造装置和液体材料/液体量监测方法
公开(公告)号：US20070261735A1
公开(公告)日：2007-11-15
申请号：US11577456
申请日：2005-10-18
申请人： Akira Yasumuro , Hachishiro Iizuka
发明人： Akira Yasumuro , Hachishiro Iizuka
IPC分类号： B01J4/00 , H01L21/56
CPC分类号： C23C16/4481 , C23C16/409 , C23C16/4485 , C23C16/52 , C30B25/14 , G01F23/2962 , G01F23/2968 , Y10T137/2931
摘要： A semiconductor manufacturing apparatus includes a container (Xb, Ab, Bb, or Cb) for receiving a liquid material, a liquid material supply section for supplying the liquid material from the container, a liquid vaporizing section for vaporizing the liquid material supplied from the liquid material supply section to generate a gas, a processing section for using the gas supplied from the liquid vaporizing section to execute deposition processing, an exhaust section for exhausting a gas from the processing section, and a liquid level detector (Xs, As, Bs, or Cs) arranged in a bottom of the container to detect a liquid level of the liquid material based on an acoustic wave.
摘要翻译：半导体制造装置包括用于接收液体材料的容器（Xb，Ab，Bb或Cb），用于从容器供应液体材料的液体材料供应部分，用于蒸发从液体供应的液体材料的液体蒸发部分用于产生气体的材料供应部分，用于使用从液体蒸发部分供应的气体执行沉积处理的处理部分，用于从处理部分排出气体的排气部分和液面检测器（Xs，As，Bs，或Cs），其基于声波检测液体材料的液面。

6. 发明授权

US08674607B2 Plasma processing apparatus and processing gas supply structure thereof 有权
标题翻译：等离子体处理装置及其处理气体供应结构
公开(公告)号：US08674607B2
公开(公告)日：2014-03-18
申请号：US13115193
申请日：2011-05-25
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： H01J7/24
CPC分类号： H01J37/32449 , H01J37/321 , H01J37/3244 , H01J2237/3343 , Y10T137/8593
摘要： There is provided a plasma processing apparatus for generating inductively coupled plasma in a processing chamber and performing a process on a substrate accommodated in the processing chamber. The plasma processing apparatus includes an upper cover installed to cover a top opening of the processing chamber and having a dielectric window; a high frequency coil installed above the dielectric window at an outer side of the processing chamber; a gas supply mechanism supported by the upper cover and installed under the dielectric window. Here, the gas supply mechanism includes a layered body including plates having through holes. Further, the gas supply mechanism is configured to supply a processing gas into the processing chamber in a horizontal direction via groove-shaped gas channels installed between the plates or between the plate and the dielectric window, and end portions of the groove-shaped gas channels are opened to edges of the through holes.
摘要翻译：提供了一种用于在处理室中产生感应耦合等离子体并在容纳在处理室中的基板上进行处理的等离子体处理装置。等离子体处理装置包括安装成覆盖处理室的顶部开口并具有电介质窗口的上盖; 高频线圈，设置在所述处理室的外侧的所述电介质窗口的上方; 由上盖支撑并安装在电介质窗下的气体供给机构。这里，气体供给机构包括具有通孔的板的层叠体。此外，气体供给机构构成为通过安装在板之间或板与介电窗口之间的槽状气体通道，在水平方向上将处理气体供给到处理室，并且槽状气体通道的端部通向通孔的边缘。

7. 发明授权

US08366828B2 Shower head and substrate processing apparatus 有权
标题翻译：淋浴头和基材加工设备
公开(公告)号：US08366828B2
公开(公告)日：2013-02-05
申请号：US12406339
申请日：2009-03-18
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： C23C16/455 , C23C16/52 , C23F16/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45574 , H01J37/3244 , H01J37/32449
摘要： A shower head is provided in a processing chamber for processing a substrate therein to face a mounting table for mounting thereon the substrate and formed of a laminated body in which a plurality of plate-shaped members are laminated. The shower head serves to supply one or more gases in a shower shape toward the substrate. The shower head includes a first gas supply unit for supplying a first gas toward the substrate through first gas injection openings provided in the laminated body, a second gas supply unit for supplying a second gas through second gas injection openings provided in the laminated body and a plurality of gas exhaust holes, formed through the laminated body, for exhausting a gas through a portion of the laminated body, the portion facing the mounting table.
摘要翻译：淋浴头设置在处理室中，用于在其中处理基板以面对安装台，用于安装在基板上，并由多个板状构件层叠的层叠体形成。喷头用于向衬底供应一种或多种淋浴形式的气体。淋浴头包括：第一气体供给单元，用于通过设置在层叠体中的第一气体注入口向基板供给第一气体;第二气体供给单元，其通过设置在层叠体中的第二气体注入开口供给第二气体;第二气体供给单元，通过层叠体形成的多个排气孔，用于通过层叠体的一部分排出气体，面向安装台的部分。

8. 发明申请

US20120090783A1 PLASMA PROCESSING APPARATUS AND PROCESSING GAS SUPPLY STRUCTURE THEREOF 有权
标题翻译：等离子体加工设备及其加工气体供应结构
公开(公告)号：US20120090783A1
公开(公告)日：2012-04-19
申请号：US13271399
申请日：2011-10-12
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： H01L21/3065 , C23C16/50
CPC分类号： H01J37/321 , H01J37/3244 , Y10T137/8593
摘要： There is provided a plasma processing apparatus for performing a process on a substrate by generating inductively coupled plasma. The plasma processing apparatus includes an upper lid, provided to cover a top opening of the processing chamber, having a dielectric window; multiple gas inlets provided at the upper lid; a high frequency coil positioned above the dielectric window at an outside of the processing chamber; and a gas supply device supported by the upper lid and provided under the dielectric window. Here, the gas supply device includes a single sheet of plate having through holes, multiple groove-shaped gas paths are formed between the plate and the dielectric window, end portions of the groove-shaped gas paths are opened to edges of the through holes and communicate with the gas inlets, and the gas supply device is configured to supply the processing gas into the processing chamber via the through holes.
摘要翻译：提供了一种等离子体处理装置，用于通过产生电感耦合等离子体在衬底上进行处理。等离子体处理装置包括设置成覆盖处理室的顶部开口的上盖，其具有电介质窗口; 设置在上盖的多个气体入口; 位于所述处理室外侧的所述电介质窗口上方的高频线圈; 以及由上盖支撑并设置在电介质窗下的气体供给装置。这里，气体供给装置包括具有通孔的单片板，在板和电介质窗之间形成有多个槽状气体通路，槽状气体通路的端部向通孔的边缘开口，与气体入口连通，气体供给装置经由通孔将处理气体供给到处理室。

9. 发明授权

US08152925B2 Baffle plate and substrate processing apparatus 有权
标题翻译：挡板和基板处理装置
公开(公告)号：US08152925B2
公开(公告)日：2012-04-10
申请号：US12483545
申请日：2009-06-12
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01J37/32623 , H01J37/32633
摘要： A baffle plate, provided in a processing chamber for processing a substrate therein such that the baffle plate is disposed around a mounting table for mounting the substrate thereon, has a plurality of gas exhaust holes, through which a gas is exhausted from the processing chamber. The baffle plate has a stacked structure including a plurality of plate-shaped members. The baffle plate includes a pressure adjustment gas supply passageway to supply a pressure adjustment gas for adjusting a pressure in the processing chamber.
摘要翻译：一种挡板，设置在处理室中，用于在其中处理基板，使得挡板设置在用于将基板安装在其上的安装台周围，具有多个排气孔，气体从处理室排出。挡板具有包括多个板状构件的堆叠结构。挡板包括压力调节气体供应通道，以供应用于调节处理室中的压力的压力调节气体。

10. 发明授权

US07413611B2 Gas reaction system and semiconductor processing apparatus 失效
标题翻译：气体反应系统和半导体加工装置
公开(公告)号：US07413611B2
公开(公告)日：2008-08-19
申请号：US10565676
申请日：2004-07-23
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/4486 , C23C16/45568
摘要： A gas reaction system is disclosed which comprises a vaporizer (230) for generating a reaction gas by vaporizing a liquid material and a reaction chamber (221A) wherein the reaction gas is reacted. The vaporizer (230) is integrally formed with a component member which defines the reaction chamber (221A). The reaction gas generated in the vaporizer (230) is directly introduced into the reaction chamber (221A). The vaporization chamber (232) of the vaporizer (230) is a space between an upper plate (230A) and a cap (230B) attached to the upper surface of the upper plate (230A). A narrow passage (233) is formed between the cap (230B) and the upper plate (230A) which passage (233) communicates with the vaporization chamber (232).
摘要翻译：公开了一种气体反应系统，其包括用于通过蒸发液体材料产生反应气体的蒸发器（230）和反应气体反应的反应室（221A）。蒸发器（230）与限定反应室（221A）的部件一体地形成。在蒸发器（230）中产生的反应气体直接引入反应室（221A）。蒸发器（230）的蒸发室（232）是上板（230A）和附接到上板（230A）的上表面的盖（230B）之间的空间。在通道（233）与蒸发室（232）连通的盖（230B）和上板（230A）之间形成窄通道（233）。

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