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1. 发明申请

US20020122991A1 Halftone phase shift mask and mask blank 有权
标题翻译：半色调相移掩模和掩模空白
公开(公告)号：US20020122991A1
公开(公告)日：2002-09-05
申请号：US10025569
申请日：2001-12-26
申请人： HOYA CORPORATION
发明人： Yuki Shiota , Osamu Nozawa
IPC分类号： B32B015/00 , B32B009/00 , B32B017/06 , G03C005/00 , G03F009/00
CPC分类号： G03F1/32
摘要： In a phase shift mask blank, a desired transmittance and phase shift amount are given in the vicinity of 157 nm as a wavelength of an F2 excimer laser. The phase shift mask blank has a phase shifter film satisfactory in a resistance to exposure light irradiation, resistance to chemicals, processability, moldability, and shape stability. The halftone phase shift mask blank having the phase shifter film on a transparent substrate is used in an exposure light wavelength range of 140 nm to 200 nm, the phase shifter film is formed of a film containing main constituting elements of silicon, oxygen, and nitrogen, and contains 35 to 45% of silicon, 1 to 60% of oxygen, and 5 to 60% of nitrogen in atomic percentage, and a total amount of the elements occupies at least 90% or more of a whole composition constituting the phase shifter portion.
摘要翻译：在相移掩模空白中，作为F2准分子激光器的波长，在157nm附近给出期望的透射率和相移量。相移掩模空白具有耐曝光光照射，耐化学品，加工性，成型性和形状稳定性令人满意的移相膜。在140nm至200nm的曝光光波长范围内使用在透明基板上具有移相膜的半色调相移掩模坯料，移相膜由含有硅，氧和氮的主要构成元素的膜形成，并且含有35〜45％的硅，1〜60％的氧和5〜60％的原子百分比的氮，并且元素的总量占构成移相器的全部组合物的至少90％以上一部分。

2. 发明申请

US20020098422A1 Lithography mask blank and method of manufacturing the same 失效
标题翻译：光刻面罩坯料及其制造方法
公开(公告)号：US20020098422A1
公开(公告)日：2002-07-25
申请号：US09998422
申请日：2001-12-03
申请人： HOYA CORPORATION
发明人： Osamu Nozawa
IPC分类号： B32B017/06 , G03C005/00 , G21K005/00 , G03F009/00
CPC分类号： C03C17/3435 , C03C17/225 , C03C2217/281 , C03C2218/32 , G03F1/68
摘要： In a method of annealing a workpiece which has a substrate and a light absorption film on the substrate, a laser beam is irradiated onto a workpiece to only heat the light absorption film without any temperature rise of the substrate and to anneal an internal stress of the light absorption film. A wavelength of the laser beam is selected so as to be absorbed into the light absorption film. The workpiece may be a photo mask blank (or a photo mask) or a phase shift mask blank (or a phase shift mask).
摘要翻译：在基板上退火具有基板和光吸收膜的工件的方法中，激光束被照射到工件上，仅在没有衬底的温度升高的情况下加热光吸收膜，并且使内部应力退火光吸收膜。选择激光束的波长以吸收到光吸收膜中。工件可以是光掩模板（或光掩模）或相移掩模板（或相移掩模）。

3. 发明申请

US20020068228A1 Photo mask blank and method of manufacturing the same 失效
标题翻译：照相面具坯料及其制造方法
公开(公告)号：US20020068228A1
公开(公告)日：2002-06-06
申请号：US09996579
申请日：2001-11-30
申请人： HOYA CORPORATION
发明人： Mitsuhiro Kureishi , Osamu Nozawa
IPC分类号： G03C005/00 , C23C014/32 , C23C014/00 , G03F009/00 , B32B017/06
CPC分类号： G03F1/50 , C23C14/0052 , C23C14/3471 , G03F1/32 , G03F1/68
摘要： In a method of manufacturing a photo mask blank by forming an opaque film or a semi-transmission film on a transparent substrate, the film is subjected to irradiation of an ion generated by an ion source. A warp of the substrate by a film stress can be reduced (the film stress is relaxed), and density and denseness of the film can be enhanced. The film may be deposited on the transparent substrate by a sputtering method.
摘要翻译：在通过在透明基板上形成不透明膜或半透膜来制造光掩模坯料的方法中，对由离子源产生的离子进行照射。通过薄膜应力可以降低基板翘曲（薄膜应力松弛），能够提高薄膜的密度和密度。可以通过溅射法将膜沉积在透明基板上。

4. 发明申请

US20040191651A1 Manufacturing method and apparatus of phase shift mask blank 有权
公开(公告)号：US20040191651A1
公开(公告)日：2004-09-30
申请号：US10821508
申请日：2004-04-09
申请人： Hoya Corporation
发明人： Osamu Nozawa , Hideaki Mitsui
IPC分类号： C23C014/32 , G03F009/00
CPC分类号： G03F1/32 , C23C14/0036 , C23C14/0641 , C23C14/225 , C23C14/505 , G03F1/26 , G03F1/68
摘要： There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.

5. 发明申请

US20040086788A1 Halftone-type phase-shift mask blank, and halftone-type phase-shift mask 有权
标题翻译：半色调型相移掩模空白和半色调型相移掩模
公开(公告)号：US20040086788A1
公开(公告)日：2004-05-06
申请号：US10421944
申请日：2003-04-24
申请人： HOYA CORPORATION
发明人： Yuki Shiota , Osamu Nozawa , Hideaki Mitsui , Ryo Ohkubo
IPC分类号： G03F001/08 , G02B005/20 , F21V009/06
CPC分类号： G03F1/32 , G02B5/3083
摘要： In a halftone-type phase-shift mask blank having a phase shifter film 5, the phase shifter film 5 has a phase adjustment layer 4 for primarily controlling the phase of exposure light, and a transmissivity adjustment layer 3 which is formed between a transparent substrate 2 and the phase adjustment layer 4 and primarily controls the transmissivity of exposure light. The transmissivity adjustment layer 3 has a thickness of 90 angstroms or less.
摘要翻译：在具有移相膜5的半色调型移相掩模坯料中，移相膜5具有用于主要控制曝光光的相位的相位调整层4和形成在透明基板之间的透射率调节层3 2和相位调整层4，并主要控制曝光光的透射率。透射率调整层3的厚度为90埃以下。

6. 发明申请

US20040157138A1 Manufacturing method and apparatus of phase shift mask blank 有权
公开(公告)号：US20040157138A1
公开(公告)日：2004-08-12
申请号：US10771997
申请日：2004-02-04
申请人： Hoya Corporation
发明人： Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03F009/00 , G03C005/00
CPC分类号： G03F1/32 , C23C14/0036 , C23C14/0641 , C23C14/225 , C23C14/505 , G03F1/26 , G03F1/68
摘要： There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.

7. 发明申请

US20030064297A1 Halftone phase-shift mask blank and halftone phase-shift mask 失效
标题翻译：半色调相移掩模空白和半色调相移掩模
公开(公告)号：US20030064297A1
公开(公告)日：2003-04-03
申请号：US10107825
申请日：2002-03-28
申请人： HOYA CORPORATION
发明人： Yuki Shiota , Osamu Nozawa , Hideaki Mitsui
IPC分类号： G03F009/00 , G03C005/00 , B32B017/06 , B32B009/00
CPC分类号： G03F1/32 , G03F1/58
摘要： A halftone phase-shift mask blank, in which the phase shifter film is composed of two layers, a low-transmission layer having a principal function of transmittance control, and a high-transmission layer having a principal function of phase shift control, the extinction coefficient K1 of the low-transmission layer and the extinction coefficient K2 of the high-transmission layer satisfy K2
摘要翻译：半色调相移掩模空白，其中移相器膜由两层组成，具有透射控制主要功能的低透射层和具有相移控制的主要功能的高透射层，消光低透射层的系数K1和高透射层的消光系数K2在140nm〜200nm之间的曝光波长λ2下满足K2

8. 发明申请

US20020058186A1 Method for manufacturing phase shift mask blank and method for manufacturing phase shift mask 有权
标题翻译：相移掩模空白的制造方法和相移掩模的制造方法
公开(公告)号：US20020058186A1
公开(公告)日：2002-05-16
申请号：US09949717
申请日：2001-09-12
申请人： HOYA CORPORATION
发明人： Osamu Nozawa , Masaru Mitsui , Hideaki Mitsui
IPC分类号： B32B015/00 , B32B017/06 , G03C005/00 , G03F009/00
CPC分类号： G03F1/32 , B32B17/06 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2218/155
摘要： To provide a method for manufacturing a phase shift mask blank having a light translucent film or a light translucent portion having the designated phase angle and transmittance and being superior in film characteristics of chemical resistance, light resistance, and internal stress. The invention is characterized by having a translucent film on a transparent substrate, wherein thermal treatment of the translucent film is implemented at more than 150null C. after forming the translucent film comprising nitrogen, metal, and silicon as a main component on said transparent substrate.
摘要翻译：提供一种制造具有光半透明膜或具有指定相位角和透射率的光半透明部分并且具有优异的耐化学性，耐光性和内应力的膜特性的相移掩模坯料的方法。本发明的特征在于在透明基板上具有半透明膜，其中在形成包括氮，金属和硅的半透明膜作为主要成分的透明膜之后，在超过150℃下实现半透膜的热处理。

9. 发明申请

US20040058254A1 Phase shift mask blank, photo mask blank, and manufacturing apparatus and method of blanks 审中-公开
标题翻译：相移掩模板，光掩模板，以及坯料的制造装置和方法
公开(公告)号：US20040058254A1
公开(公告)日：2004-03-25
申请号：US10667823
申请日：2003-09-22
申请人： Hoya Corporation
发明人： Osamu Nozawa , Masaru Mitsui , Hitoshi Ootsuka , Hideaki Mitsui
IPC分类号： G03F009/00
CPC分类号： G03F1/32 , C23C14/34 , C23C14/3414 , C23C14/35 , C23C14/564 , G03F1/26 , G03F1/50 , G03F1/68 , H01J37/3405
摘要： There is provided a manufacturing apparatus and method able to manufacture a phase shift mask blank in which a total number of particles and pinholes having a diameter larger than about a half of an exposure wavelength in a light semi-transmission film is 0.1 or less per square centimeter. In a DC magnetron sputtering apparatus for manufacturing a halftone phase shift mask blank, for example, a target plane is disposed downwards with respect to a gravity direction, a whole-surface erosion cathode is used, a corner portion 5a of an end of a target and a corner portion of an earth shield are chamfered (R processed), a target end 5b, an exposed backing plate surface 4b and the surface of an earth shield 12 are roughened, and the earth shield 12 is disposed above a target plane d (on a backing plate side).
摘要翻译：提供一种能够制造相移掩模坯料的制造装置和方法，其中在半透射膜中直径大于曝光波长的大约一半的颗粒和针孔的总数为每平方厘米0.1以下厘米。在用于制造半色调相移掩模坯料的DC磁控溅射装置中，例如，目标平面相对于重力方向向下设置，使用全表面侵蚀阴极，靶的端部的角部5a 并且接地屏蔽的角部被倒角（R处理），目标端5b，暴露的背板表面4b和接地屏蔽体12的表面被粗糙化，并且接地屏蔽12设置在目标平面d 在背板侧）。

10. 发明申请

US20040023125A1 Method for producing a halftone phase shift mask blank, a halftone phase shift mask blank and halftone phase shift mask 失效
标题翻译：半色调相移掩模坯料的制造方法，半色调相移掩模坯料和半色调相移掩模
公开(公告)号：US20040023125A1
公开(公告)日：2004-02-05
申请号：US10207033
申请日：2002-07-30
申请人： HOYA CORPORATION , DUPONT PHOTOMASK, Inc.
发明人： Osamu Nozawa , Hideaki Mitsui , Laurent Dieu
IPC分类号： G03F001/00 , C23C014/34 , G02B005/20 , B32B009/00 , B32B015/00 , B32B019/00 , B32B017/06 , F21V009/06 , C23C014/46
CPC分类号： G03F1/32 , C03C17/3435 , C23C14/0641 , C23C14/0652 , C23C14/46 , G03F1/58 , H01J2237/3146
摘要： A method for producing a halftone phase shift mask blank having a semi-transmission film on a transparent substrate includes alternately laminating, on a transparent substrate, thin layers substantially made of nitrogen and titanium and thin layers substantially made of nitrogen and silicon to thereby form thereon a multi-layered semi-transmission film, followed by heating the semi-transmission film at 300null C. or higher.
摘要翻译：一种用于制造在透明基板上具有半透膜的半色调相移掩模坯料的方法包括在透明基板上交替层叠基本上由氮和钛制成的薄层以及基本上由氮和硅制成的薄层，从而在其上形成多层半透膜，然后在300℃以上加热半透膜。

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