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1. 发明申请

US20180204732A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 审中-公开
公开(公告)号：US20180204732A1
公开(公告)日：2018-07-19
申请号：US15922500
申请日：2018-03-15
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Tsukasa KAMAKURA , Koei KURIBAYASHI , Daigo YAMAGUCHI
IPC分类号： H01L21/31 , H01L21/768 , H01L23/532 , C23C16/44 , C23C16/455
摘要： There is provided a technique that includes: (a) providing a substrate having a film containing a predetermined element, oxygen and carbon formed on a surface of the substrate; and (b) modifying at least a surface of the film by supplying a carbon-free fluorine-based gas to the substrate under a condition in which etching of the film does not occur.

2. 发明申请

US20160322212A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 审中-公开
标题翻译：制造半导体器件的方法，基板处理装置和记录介质
公开(公告)号：US20160322212A1
公开(公告)日：2016-11-03
申请号：US15085459
申请日：2016-03-30
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Tsukasa KAMAKURA , Takaaki NODA , Yoshiro HIROSE
IPC分类号： H01L21/02 , C23C10/02
CPC分类号： H01L21/0228 , C23C16/402 , C23C16/45534 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02277
摘要： A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.
摘要翻译：通过执行以下步骤，在基板上形成层叠第一层和第二层的膜：通过执行预定次数的第一循环来形成第一层，第一循环包括非同时执行：将源提供到基板并且当源和反应物分别存在时，在源和反应物都不被热分解的第一温度下向反应物供应反应物; 以及通过执行预定次数的第二循环来形成所述第二层，所述第二循环包括非同时执行的：将所述源提供给所述基板，并将所述反应物供应到所述基板，在所述第二温度下，当源和反应物分别存在时，反应物被热分解，第二温度分别与第一温度不同。

3. 发明申请

US20150275357A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20150275357A1
公开(公告)日：2015-10-01
申请号：US14682591
申请日：2015-04-09
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Tsukasa KAMAKURA , Kenji KAMEDA
IPC分类号： C23C16/44 , H01L21/02
CPC分类号： C23C16/4405 , C23C16/4412 , C23C16/45523 , C23C16/4586 , C23C16/52 , H01L21/0217 , H01L21/0228
摘要： Provided is a method of manufacturing a semiconductor device wherein a cleaning process on the inside of an exhaust buffer chamber may be performed sufficiently and satisfactorily even if gases are exhausted using the exhaust buffer chamber. The method includes: (a) processing a substrate placed on a substrate placing surface in a processing space by supplying gases onto the substrate in the processing space through a side facing the substrate placing surface while exhausting the gases from the processing space using an exhaust buffer chamber including a space surrounding an outer circumference of a side portion of the processing space; and (b) cleaning and inside of the exhaust buffer chamber by supplying a cleaning gas into the exhaust buffer chamber through a cleaning gas supply pipe communicating with the space of the exhaust buffer chamber.
摘要翻译：提供一种制造半导体器件的方法，其中即使使用排气缓冲室排出气体，也可以充分且令人满意地进行排气缓冲室内部的清洁处理。该方法包括：（a）通过在使用排气缓冲器排出来自处理空间的气体的同时通过面向衬底放置表面的一侧将处理空间中的气体供应到处理空间中的衬底上来处理放置在处理空间中的衬底放置表面上的衬底所述腔室包括围绕所述处理空间的侧部的外周的空间; 以及（b）通过与排气缓冲室的空间连通的清洁气体供给管将净化气体供给到排气缓冲室内，并清洁排气缓冲室内部。

4. 发明申请

US20170029945A1 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM 审中-公开
标题翻译：基板处理装置，制造半导体器件的方法和记录介质
公开(公告)号：US20170029945A1
公开(公告)日：2017-02-02
申请号：US15220979
申请日：2016-07-27
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Tsukasa KAMAKURA
IPC分类号： C23C16/44 , C23C16/52 , C23C16/455 , H01L21/02 , C23C16/46
CPC分类号： C23C16/4412 , C23C16/402 , C23C16/4405 , C23C16/45561 , C23C16/45578 , C23C16/4584 , C23C16/46 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/0228
摘要： A substrate processing apparatus is disclosed. The substrate processing apparatus includes a gas supply system which supplies a gas into a process chamber, an exhaust system which discharges the gas existing within the process chamber; and a gas supply pipe which supplies the gas into the process chamber via holes, and disposed inside the process chamber, where one end of the gas supply pipe is connected to the gas supply system, the other end of the gas supply pipe is connected to the exhaust system via a pipeline outside the process chamber.
摘要翻译：公开了一种基板处理装置。基板处理装置包括向处理室供给气体的气体供给系统，对处理室内存在的气体进行排出的排气系统; 以及气体供给管，其通过孔将气体供给到处理室，并且配置在处理室内，气体供给管的一端与气体供给系统连接，气体供给管的另一端与排气系统通过处理室外的管道。

5. 发明申请

US20140256156A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权
标题翻译：制造半导体器件的方法，基板处理装置和记录介质
公开(公告)号：US20140256156A1
公开(公告)日：2014-09-11
申请号：US14195444
申请日：2014-03-03
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Katsuyoshi HARADA , Yoshiro HIROSE , Tsukasa KAMAKURA , Atsushi SANO , Yugo ORIHASHI
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/0228 , C23C16/0272 , C23C16/24 , C23C16/4408 , C23C16/45523 , C23C16/52 , H01L21/02205 , H01L21/02304 , H01L21/32055 , H01L21/67017
摘要： A method of manufacturing a semiconductor device, includes treating a surface of an insulating film formed on a substrate by supplying a first precursor including a predetermined element and a halogen group to the substrate; and forming a thin film including the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second precursor including the predetermined element and the halogen group to the substrate; and supplying a third precursor to the substrate.
摘要翻译：一种制造半导体器件的方法，包括通过将包含预定元素和卤素基团的第一前体供给到所述衬底来处理形成在衬底上的绝缘膜的表面; 以及通过执行预定次数的循环，在所述绝缘膜的处理表面上形成包括所述预定元素的薄膜，所述循环包括：将包含所述预定元素和所述卤素基团的第二前体供应到所述基板; 并向衬底提供第三前体。

6. 发明申请

US20180151347A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 审中-公开
公开(公告)号：US20180151347A1
公开(公告)日：2018-05-31
申请号：US15826252
申请日：2017-11-29
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Takeo HANASHIMA , Takafumi SASAKI , Hiroaki HIRAMATSU , Tsukasa KAMAKURA
IPC分类号： H01L21/02 , C23C16/455 , C23C16/52
CPC分类号： H01L21/0228 , C23C16/345 , C23C16/45523 , C23C16/45527 , C23C16/45544 , C23C16/45563 , C23C16/45574 , C23C16/52 , H01L21/0217 , H01L21/02211
摘要： A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) forming a first layer by supplying a precursor to the substrate from a first nozzle and (b) forming a second layer by supplying a reactant to the substrate from a second nozzle different from the first nozzle to thereby modify the first layer. The act (a) includes sequentially performing (a-1) supplying an inert gas from the second nozzle at a first flow rate smaller than a flow rate of the precursor in a state in which the precursor is supplied from the first nozzle and (a-2) supplying an inert gas from the second nozzle at a second flow rate larger than the flow rate of the precursor in a state in which the precursor is supplied from the first nozzle.

7. 发明申请

US20170004961A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权
标题翻译：制造半导体器件的方法，基板处理装置和记录介质
公开(公告)号：US20170004961A1
公开(公告)日：2017-01-05
申请号：US15267390
申请日：2016-09-16
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Takuro USHIDA , Tsukasa KAMAKURA , Hiroshi ASHIHARA , Kimihiko NAKATANI
IPC分类号： H01L21/02 , C23C16/52 , C23C16/40 , C23C16/44
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/4408 , C23C16/45523 , C23C16/52 , H01L21/02186
摘要： An oxide film is formed on a substrate by performing a cycle a predetermined number of times. The cycle includes: continuously performing supplying in advance an oxidant to a substrate in a process chamber and simultaneously supplying the oxidant and a precursor to the substrate in the process chamber, without having to purge an interior of the process chamber between the act of supplying in advance the oxidant and the act of simultaneously supplying the oxidant and the precursor; stopping the supply of the oxidant and the precursor to the substrate in the process chamber and purging the interior of the process chamber; and supplying the oxidant to the substrate in the purged process chamber.
摘要翻译：通过执行预定次数的循环在基板上形成氧化膜。该循环包括：连续地将处理室中的氧化剂提供给基材，同时将氧化剂和前体供给到处理室中的基材，而不必在进料的作用之间吹扫处理室的内部促进氧化剂和同时供应氧化剂和前体的作用; 停止在处理室中将氧化剂和前体供应到基底并清洗处理室的内部; 以及将氧化剂供应到清洗的处理室中的基底。

8. 发明申请

US20160064219A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权
标题翻译：制造半导体器件的方法，基板处理装置和记录介质
公开(公告)号：US20160064219A1
公开(公告)日：2016-03-03
申请号：US14838793
申请日：2015-08-28
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Ryuji YAMAMOTO , Tsukasa KAMAKURA , Yoshiro HIROSE , Satoshi SHIMAMOTO
IPC分类号： H01L21/02 , C23C16/455 , C23C16/52 , C23C16/46 , C23C16/458
CPC分类号： H01L21/02334 , C23C16/4405 , H01L21/02126 , H01L21/02167 , H01L21/02178 , H01L21/02183 , H01L21/02186 , H01L21/02194 , H01L21/02208 , H01L21/02211 , H01L21/0228 , H01L21/67
摘要： A technique includes loading a substrate into a process chamber, supporting the substrate by a mounting table having a heater therein in the process chamber, forming a film on the substrate by supplying a processing gas into the process chamber in a state where the mounting table having the substrate supported thereon is disposed in a first position and the heater is turned on, unloading the substrate on which the film is formed, and supplying a reactive gas into the process chamber in a state where the mounting table is disposed in a second position and the heater is turned on. The second position is closer to a ceiling portion in the process chamber than the first position.
摘要翻译：一种技术包括将基板装载到处理室中，通过在处理室中具有加热器的安装台支撑基板，通过在处理室中将处理气体供给到处理室中，在该基板上形成膜，其中安装台具有支撑在其上的基板设置在第一位置并且加热器被接通，卸载其上形成有膜的基板，并且在安装台设置在第二位置的状态下将反应性气体供应到处理室中，并且加热器打开。第二位置比第一位置更靠近处理室中的顶部。

9. 发明申请

US20150255269A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权
标题翻译：制造半导体器件的方法，基板处理装置和记录介质
公开(公告)号：US20150255269A1
公开(公告)日：2015-09-10
申请号：US14719097
申请日：2015-05-21
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Katsuyoshi HARADA , Yoshiro HIROSE , Tsukasa KAMAKURA , Atsushi SANO , Yugo ORIHASHI
IPC分类号： H01L21/02 , C23C16/52
CPC分类号： H01L21/0228 , C23C16/0272 , C23C16/24 , C23C16/4408 , C23C16/45523 , C23C16/52 , H01L21/02205 , H01L21/02304 , H01L21/32055 , H01L21/67017
摘要： A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate, and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second gas containing the predetermined element and a halogen group to the substrate, and supplying a third gas to the substrate.
摘要翻译：提供一种制造半导体器件的方法。该方法包括：通过向衬底提供含有卤素基团的第一气体，并且在绝缘膜的处理表面上形成含有预定元素的薄膜，从而形成在基板上形成的绝缘膜的表面，次数。该循环包括将含有预定元素和卤素基团的第二气体供应到基底，并将第三气体供应到基底。

10. 发明申请

US20140349492A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM 有权
标题翻译：半导体器件制造方法，基板处理装置和记录介质
公开(公告)号：US20140349492A1
公开(公告)日：2014-11-27
申请号：US14230416
申请日：2014-03-31
申请人： c/o HITACHI KOKUSAI ELECTRIC INC.
发明人： Satoshi SHIMAMOTO , Yoshiro HIROSE , Atsushi SANO , Tsukasa KAMAKURA , Takaaki NODA
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/45534 , C23C16/45536 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/02337
摘要： A semiconductor device manufacturing method includes forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate; supplying an oxidizing gas and a second catalytic gas to the substrate; and supplying a modifying gas containing the specified Group III or Group V element to the substrate.
摘要翻译：半导体器件制造方法包括通过执行预定次数的循环，在衬底上形成含有硅，氧，碳和指定的III族或V族元素的薄膜。该循环包括：向衬底供给含硅，碳和卤素元素的前体气体并具有Si-C键和第一催化气体; 向所述基板供给氧化气体和第二催化气体; 并将含有规定的III族或V族元素的改性气体供给至基材。

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