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1. 发明申请

US20180204732A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 审中-公开
公开(公告)号：US20180204732A1
公开(公告)日：2018-07-19
申请号：US15922500
申请日：2018-03-15
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Tsukasa KAMAKURA , Koei KURIBAYASHI , Daigo YAMAGUCHI
IPC分类号： H01L21/31 , H01L21/768 , H01L23/532 , C23C16/44 , C23C16/455
摘要： There is provided a technique that includes: (a) providing a substrate having a film containing a predetermined element, oxygen and carbon formed on a surface of the substrate; and (b) modifying at least a surface of the film by supplying a carbon-free fluorine-based gas to the substrate under a condition in which etching of the film does not occur.

2. 发明申请

US20160322212A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 审中-公开
标题翻译：制造半导体器件的方法，基板处理装置和记录介质
公开(公告)号：US20160322212A1
公开(公告)日：2016-11-03
申请号：US15085459
申请日：2016-03-30
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Tsukasa KAMAKURA , Takaaki NODA , Yoshiro HIROSE
IPC分类号： H01L21/02 , C23C10/02
CPC分类号： H01L21/0228 , C23C16/402 , C23C16/45534 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02277
摘要： A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.
摘要翻译：通过执行以下步骤，在基板上形成层叠第一层和第二层的膜：通过执行预定次数的第一循环来形成第一层，第一循环包括非同时执行：将源提供到基板并且当源和反应物分别存在时，在源和反应物都不被热分解的第一温度下向反应物供应反应物; 以及通过执行预定次数的第二循环来形成所述第二层，所述第二循环包括非同时执行的：将所述源提供给所述基板，并将所述反应物供应到所述基板，在所述第二温度下，当源和反应物分别存在时，反应物被热分解，第二温度分别与第一温度不同。

3. 发明申请

US20150275357A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20150275357A1
公开(公告)日：2015-10-01
申请号：US14682591
申请日：2015-04-09
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Tsukasa KAMAKURA , Kenji KAMEDA
IPC分类号： C23C16/44 , H01L21/02
CPC分类号： C23C16/4405 , C23C16/4412 , C23C16/45523 , C23C16/4586 , C23C16/52 , H01L21/0217 , H01L21/0228
摘要： Provided is a method of manufacturing a semiconductor device wherein a cleaning process on the inside of an exhaust buffer chamber may be performed sufficiently and satisfactorily even if gases are exhausted using the exhaust buffer chamber. The method includes: (a) processing a substrate placed on a substrate placing surface in a processing space by supplying gases onto the substrate in the processing space through a side facing the substrate placing surface while exhausting the gases from the processing space using an exhaust buffer chamber including a space surrounding an outer circumference of a side portion of the processing space; and (b) cleaning and inside of the exhaust buffer chamber by supplying a cleaning gas into the exhaust buffer chamber through a cleaning gas supply pipe communicating with the space of the exhaust buffer chamber.
摘要翻译：提供一种制造半导体器件的方法，其中即使使用排气缓冲室排出气体，也可以充分且令人满意地进行排气缓冲室内部的清洁处理。该方法包括：（a）通过在使用排气缓冲器排出来自处理空间的气体的同时通过面向衬底放置表面的一侧将处理空间中的气体供应到处理空间中的衬底上来处理放置在处理空间中的衬底放置表面上的衬底所述腔室包括围绕所述处理空间的侧部的外周的空间; 以及（b）通过与排气缓冲室的空间连通的清洁气体供给管将净化气体供给到排气缓冲室内，并清洁排气缓冲室内部。

4. 发明申请

US20170029945A1 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM 审中-公开
标题翻译：基板处理装置，制造半导体器件的方法和记录介质
公开(公告)号：US20170029945A1
公开(公告)日：2017-02-02
申请号：US15220979
申请日：2016-07-27
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Tsukasa KAMAKURA
IPC分类号： C23C16/44 , C23C16/52 , C23C16/455 , H01L21/02 , C23C16/46
CPC分类号： C23C16/4412 , C23C16/402 , C23C16/4405 , C23C16/45561 , C23C16/45578 , C23C16/4584 , C23C16/46 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/0228
摘要： A substrate processing apparatus is disclosed. The substrate processing apparatus includes a gas supply system which supplies a gas into a process chamber, an exhaust system which discharges the gas existing within the process chamber; and a gas supply pipe which supplies the gas into the process chamber via holes, and disposed inside the process chamber, where one end of the gas supply pipe is connected to the gas supply system, the other end of the gas supply pipe is connected to the exhaust system via a pipeline outside the process chamber.
摘要翻译：公开了一种基板处理装置。基板处理装置包括向处理室供给气体的气体供给系统，对处理室内存在的气体进行排出的排气系统; 以及气体供给管，其通过孔将气体供给到处理室，并且配置在处理室内，气体供给管的一端与气体供给系统连接，气体供给管的另一端与排气系统通过处理室外的管道。

5. 发明申请

US20140256156A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 有权
标题翻译：制造半导体器件的方法，基板处理装置和记录介质
公开(公告)号：US20140256156A1
公开(公告)日：2014-09-11
申请号：US14195444
申请日：2014-03-03
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Katsuyoshi HARADA , Yoshiro HIROSE , Tsukasa KAMAKURA , Atsushi SANO , Yugo ORIHASHI
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/0228 , C23C16/0272 , C23C16/24 , C23C16/4408 , C23C16/45523 , C23C16/52 , H01L21/02205 , H01L21/02304 , H01L21/32055 , H01L21/67017
摘要： A method of manufacturing a semiconductor device, includes treating a surface of an insulating film formed on a substrate by supplying a first precursor including a predetermined element and a halogen group to the substrate; and forming a thin film including the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second precursor including the predetermined element and the halogen group to the substrate; and supplying a third precursor to the substrate.
摘要翻译：一种制造半导体器件的方法，包括通过将包含预定元素和卤素基团的第一前体供给到所述衬底来处理形成在衬底上的绝缘膜的表面; 以及通过执行预定次数的循环，在所述绝缘膜的处理表面上形成包括所述预定元素的薄膜，所述循环包括：将包含所述预定元素和所述卤素基团的第二前体供应到所述基板; 并向衬底提供第三前体。

6. 发明申请

US20190025799A1 SUBSTRATE PROCESSING SYSTEM 审中-公开
公开(公告)号：US20190025799A1
公开(公告)日：2019-01-24
申请号：US15706871
申请日：2017-09-18
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Masanori NAKAYAMA , Tsukasa KAMAKURA
IPC分类号： G05B19/418 , G05B23/02 , H01L21/67
摘要： There is provided a substrate processing system, including: a plurality of substrate processing apparatuses; a first control part installed in each of the plurality of substrate processing apparatuses and configured to transmit a first apparatus data from each of the plurality of substrate processing apparatuses; a second control part configured to receive the first apparatus data from each of the plurality of substrate processing apparatuses, generate a priority data of each of the plurality of substrate processing apparatuses based on the first apparatus data, and transmit the priority data to the first control part; and a display part configured to display the priority data thereon.

7. 发明申请

US20160211135A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM AND RECORDING MEDIUM 有权
标题翻译：制造半导体器件的方法，衬底处理装置，衬底处理系统和记录介质
公开(公告)号：US20160211135A1
公开(公告)日：2016-07-21
申请号：US15084847
申请日：2016-03-30
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Takaaki NODA , Shingo NOHARA , Satoshi SHIMAMOTO , Hiroshi ASHIHARA , Takeo HANASHIMA , Yoshiro HIROSE , Tsukasa KAMAKURA
IPC分类号： H01L21/02 , C23C16/455 , C23C16/52
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/401 , C23C16/45534 , C23C16/45536 , C23C16/45544 , C23C16/52 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02208 , H01L21/02211 , H01L21/02318
摘要： There is provided a technique including: (a) forming a thin film containing a predetermined element, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a source gas containing the predetermined element, carbon and a halogen element having a chemical bond between the predetermined element and carbon to the substrate; (a-2) supplying an oxidizing gas to the substrate; and (a-3) supplying a catalytic gas to the substrate; (b) removing a first impurity from the thin film by thermally processing the thin film at a first temperature higher than a temperature of the substrate in (a); and (c) removing a second impurity different from the first impurity from the thin film by thermally processing the thin film at a second temperature equal to or higher than the first temperature after performing (b).
摘要翻译：提供了一种技术，包括：（a）通过执行预定次数的循环，在基板上形成含有预定元素，氧和碳的薄膜，该循环包括：（a-1）供应含有预定元素，碳和卤素元素，其在预定元素和碳之间具有与基底的化学键; （a-2）向所述基板供给氧化气体; 和（a-3）向所述基板供给催化气体; （b）通过在（a）中高于基板的温度的第一温度下热处理所述薄膜从所述薄膜中除去第一杂质; 和（c）通过在执行（b）之后在等于或高于第一温度的第二温度下热处理薄膜，从薄膜中除去与第一杂质不同的第二杂质。

8. 发明申请

US20160155634A1 Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Substrate Processing System and Non-Transitory Computer-Readable Recording Medium 审中-公开
标题翻译：半导体器件制造方法，基板处理装置，基板处理系统及非暂时计算机可读记录介质
公开(公告)号：US20160155634A1
公开(公告)日：2016-06-02
申请号：US15013721
申请日：2016-02-02
申请人： Hitachi Kokusai Electric Inc.
发明人： Satoshi SHIMAMOTO , Takaaki NODA , Takeo HANASHIMA , Yoshiro HIROSE , Hiroshi ASHIHARA , Tsukasa KAMAKURA , Shingo NOHARA
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/45527 , C23C16/56 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02219 , H01L21/02238 , H01L21/02274 , H01L21/0228 , H01L21/02318 , H01L21/02359 , H01L21/67109
摘要： A method of manufacturing a semiconductor device includes forming a thin film having excellent etching resistance and a low dielectric constant on a substrate, removing first impurities containing H2O and Cl from the thin film by heating the thin film at a first temperature higher than a temperature of the substrate in the forming of the thin film, and removing second impurities containing a hydrocarbon compound (CxHy-based impurities) from the thin film in which heat treatment is performed at the first temperature by heating the thin film at a second temperature equal to or higher than the first temperature.
摘要翻译：一种制造半导体器件的方法包括在衬底上形成具有优异的耐蚀刻性和低介电常数的薄膜，通过在第一温度高于第二温度的第一温度下从薄膜中除去含有H 2 O和Cl的第一杂质，在形成薄膜的基板上，从第一温度下进行热处理的薄膜中除去含有烃化合物的第二杂质（C x H y基杂质），第二温度等于或等于高于第一温度。

9. 发明申请

US20160060755A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20160060755A1
公开(公告)日：2016-03-03
申请号：US14671211
申请日：2015-03-27
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Tsukasa KAMAKURA
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , C23C16/46
CPC分类号： C23C16/4412 , C23C16/4405 , C23C16/455 , C23C16/45591 , C23C16/46 , C23C16/52
摘要： There is provided a substrate processing apparatus. The substrate processing apparatus includes a processing space configured to process a substrate placed on a substrate receiving surface on a substrate support, a gas supply system configured to supply gases into the processing space from the opposite side of the substrate receiving surface, an exhaust buffer chamber including a communication hole communicating with the processing space at least at a side portion of the processing space and a gas flow blocking wall extending in a blocking direction of the gases flowing through the communication hole, and a first heating element configured to heat the exhaust buffer chamber.
摘要翻译：提供了一种基板处理装置。基板处理装置包括：处理空间，其被配置为处理放置在基板支撑体上的基板接收表面上的基板;气体供给系统，被配置为从基板接收表面的相对侧向处理空间供应气体;排气缓冲室包括至少在所述处理空间的侧部与所述处理空间连通的连通孔和沿着流过所述连通孔的气体的阻挡方向延伸的气体阻流壁;以及第一加热元件，其构造成将所述排气缓冲器房间。

10. 发明申请

US20180151347A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM 审中-公开
公开(公告)号：US20180151347A1
公开(公告)日：2018-05-31
申请号：US15826252
申请日：2017-11-29
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Takeo HANASHIMA , Takafumi SASAKI , Hiroaki HIRAMATSU , Tsukasa KAMAKURA
IPC分类号： H01L21/02 , C23C16/455 , C23C16/52
CPC分类号： H01L21/0228 , C23C16/345 , C23C16/45523 , C23C16/45527 , C23C16/45544 , C23C16/45563 , C23C16/45574 , C23C16/52 , H01L21/0217 , H01L21/02211
摘要： A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) forming a first layer by supplying a precursor to the substrate from a first nozzle and (b) forming a second layer by supplying a reactant to the substrate from a second nozzle different from the first nozzle to thereby modify the first layer. The act (a) includes sequentially performing (a-1) supplying an inert gas from the second nozzle at a first flow rate smaller than a flow rate of the precursor in a state in which the precursor is supplied from the first nozzle and (a-2) supplying an inert gas from the second nozzle at a second flow rate larger than the flow rate of the precursor in a state in which the precursor is supplied from the first nozzle.

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