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    • 1. 发明授权
    • Fuse sensing scheme with auto current reduction
    • 具有自动电流降低的保险丝感测方案
    • US07215175B1
    • 2007-05-08
    • US10932162
    • 2004-09-01
    • Gurupada MandalSuresh SeshadriDavid Hugh McIntyreRaymond A. HealdWilliam Y. Mo
    • Gurupada MandalSuresh SeshadriDavid Hugh McIntyreRaymond A. HealdWilliam Y. Mo
    • H01H37/76H01H85/00
    • G11C17/18
    • An improved circuit for sensing and programming fuses in integrated circuits. The circuit is broadly comprised of a fuse cell, a reference circuit, a sense amplifier and a level detector. In one embodiment of the present invention, a two-stage sensing scheme is implemented. The improved fuse sensing circuit uses current-mode sensing and implements an auto-read current reduction scheme. Using a level-detect circuit, the virtual ground is raised automatically if the high-voltage power supply exceeds core supply (Vdd) by a fixed dc voltage. This reduces effective sensing voltage and the read current and thus helps preserve unblown fuse integrity. In one embodiment of the invention, four modes of operation are implemented: “Normal Read,” “Unblown_Read,” “Blown_Read_1” and “Blown_Read_2.” The default read mode is the “normal read” while the “Unblown” and “Blown” read modes are for fuse calibration purposes. In the “Unblown_Read” read mode, the circuit is operable to compare the fuse resistance against a lower reference resistance, closer to an unblown fuse resistance value, in order to make the comparison more stringent. Similarly, the “Blown_Read_1” and “Blown_Read_2” modes allow a more stringent comparison for a blown fuse resistance.
    • 一种用于在集成电路中感测和编程保险丝的改进电路。 该电路广泛地包括熔丝单元,参考电路,读出放大器和电平检测器。 在本发明的一个实施例中,实现了两级感测方案。 改进的熔丝感测电路使用电流模式感测并实现自动读取电流降低方案。 使用电平检测电路,如果高压电源以固定的直流电压超过磁芯电源(Vdd),则虚拟接地将自动升高。 这降低了有效的感测电压和读取电流,从而有助于保持未熔断的保险丝完整性。 在本发明的一个实施例中,实现了四种操作模式:“Normal Read”,“Unblown_Read”,“Blown_Read_1”和“Blown_Read_2”。 “Unblown”和“Blown”读取模式的默认读取模式是“正常读取”,用于保险丝校准。 在“Unblown_Read”读取模式下,该电路可操作以将熔丝电阻与较低的参考电阻进行比较,更接近未熔断的保险丝电阻值,以使比较更加严格。 类似地,“Blown_Read_1”和“Blown_Read_2”模式允许对熔断熔断器电阻进行更严格的比较。
    • 3. 发明授权
    • Multi-port memory array
    • 多端口存储器阵列
    • US08374039B2
    • 2013-02-12
    • US12975718
    • 2010-12-22
    • David Hugh McIntyreJimmy L. Reaves
    • David Hugh McIntyreJimmy L. Reaves
    • G11C7/06
    • G11C7/1075
    • A multi-port memory array is disclosed. The memory array includes a plurality of memory subblocks and an output network. Each memory subblock includes a plurality of single-read-port memory cells. The output network is configured to redirect information read for a first read port to a second read port on a condition that an equivalence signal indicates that read addresses for the first read port and the second read port are the same. The latching and multiplexing operation may be integrated. The memory cells may be 6-transistor synchronous random access memory (SRAM) cells, 8-transistor SRAM cells, or any type of memory cells.
    • 公开了一种多端口存储器阵列。 存储器阵列包括多个存储器子块和输出网络。 每个存储器子块包括多个单个读取端口存储器单元。 输出网络被配置为在等效信号指示第一读取端口和第二读取端口的读取地址相同的条件下将用于第一读取端口读取的信息重定向到第二读取端口。 锁存和复用操作可以被集成。 存储单元可以是6晶体管同步随机存取存储器(SRAM)单元,8晶体管SRAM单元或任何类型的存储单元。
    • 10. 发明申请
    • MULTI-PORT MEMORY ARRAY
    • 多端口存储阵列
    • US20120163102A1
    • 2012-06-28
    • US12975718
    • 2010-12-22
    • David Hugh McIntyreJimmy L. Reaves
    • David Hugh McIntyreJimmy L. Reaves
    • G11C7/00G11C8/16G11C8/00
    • G11C7/1075
    • A multi-port memory array is disclosed. The memory array includes a plurality of memory subblocks and an output network. Each memory subblock includes a plurality of single-read-port memory cells. The output network is configured to redirect information read for a first read port to a second read port on a condition that an equivalence signal indicates that read addresses for the first read port and the second read port are the same. The latching and multiplexing operation may be integrated. The memory cells may be 6-transistor synchronous random access memory (SRAM) cells, 8-transistor SRAM cells, or any type of memory cells.
    • 公开了一种多端口存储器阵列。 存储器阵列包括多个存储器子块和输出网络。 每个存储器子块包括多个单个读取端口存储器单元。 输出网络被配置为在等效信号指示第一读取端口和第二读取端口的读取地址相同的条件下将用于第一读取端口读取的信息重定向到第二读取端口。 锁存和复用操作可以被集成。 存储单元可以是6晶体管同步随机存取存储器(SRAM)单元,8晶体管SRAM单元或任何类型的存储单元。