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1. 发明申请

US20050089268A1 Multiplexer with a dense wavelength division multiplexing function 失效
标题翻译：具有密集波分复用功能的多路复用器
公开(公告)号：US20050089268A1
公开(公告)日：2005-04-28
申请号：US10695292
申请日：2003-10-28
申请人： Guo-Zen Chen , Ray-Ming Lin , Tzer-En Nee
发明人： Guo-Zen Chen , Ray-Ming Lin , Tzer-En Nee
IPC分类号： G02B6/28 , G02B6/32 , G02B6/34 , G02B6/42 , H04J14/02
CPC分类号： G02B6/2938 , G02B6/29367 , G02B6/4249
摘要： This invention relates to a multiplexer with a DWDM function, mainly comprising two modules, and an optic fiber is linked between said two modules, in which several filters and reflection mirrors, inclined slabs, laser diodes, receiver, and optical detectors detecting reflection light are provided in each module; thereby, many groups of optic signals may be mutually transmitted in a line of optic fiber at the same time so that the volume of mutually transmitted signals may multiplies under the condition of no extra paved optic fibers required, and in order to effectively detect the variations of laser for promotion of the stability of the module, the laser diode and the optic detector are further located in a predetermined site and the inclined slab is used to draw the reflection light of the laser to the nearby optic detector detecting the reflection light.
摘要翻译：本发明涉及一种具有DWDM功能的多路复用器，主要包括两个模块，光纤连接在所述两个模块之间，其中多个滤光器和反射镜，倾斜板，激光二极管，接收器和检测反射光的光检测器在每个模块中提供; 因此，许多组光信号可以同时在光纤线路中相互传输，使得相互传输的信号的体积可以在不需要额外铺设的光纤的条件下相乘，并且为了有效地检测变化的激光器用于促进模块的稳定性，激光二极管和光学检测器进一步位于预定位置，并且倾斜板被用于将激光的反射光拉到检测反射光的附近的光学检测器。

2. 发明授权

US06945711B2 Multiplexer with a dense wavelength division multiplexing function 失效
公开(公告)号：US06945711B2
公开(公告)日：2005-09-20
申请号：US10695292
申请日：2003-10-28
申请人： Guo-Zen Chen , Ray-Ming Lin , Tzer-En Nee
发明人： Guo-Zen Chen , Ray-Ming Lin , Tzer-En Nee
IPC分类号： G02B6/28 , G02B6/32 , G02B6/34 , G02B6/42 , H04J14/02
CPC分类号： G02B6/2938 , G02B6/29367 , G02B6/4249
摘要： This invention relates to a multiplexer with a DWDM function, mainly comprising two modules, and an optic fiber is linked between said two modules, in which several filters and reflection mirrors, inclined slabs, laser diodes, receiver, and optical detectors detecting reflection light are provided in each module; thereby, many groups of optic signals may be mutually transmitted in a line of optic fiber at the same time so that the volume of mutually transmitted signals may multiplies under the condition of no extra paved optic fibers required, and in order to effectively detect the variations of laser for promotion of the stability of the module, the laser diode and the optic detector are further located in a predetermined site and the inclined slab is used to draw the reflection light of the laser to the nearby optic detector detecting the reflection light.

3. 发明授权

US08138494B2 GaN series light-emitting diode structure 有权
标题翻译： GaN系列发光二极管结构
公开(公告)号：US08138494B2
公开(公告)日：2012-03-20
申请号：US12694600
申请日：2010-01-27
申请人： Ray-Ming Lin , Jhong-Hao Jiang , Bor-Ren Fang
发明人： Ray-Ming Lin , Jhong-Hao Jiang , Bor-Ren Fang
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere.
摘要翻译：本发明涉及一种GaN系发光二极管结构，其包括：基板; 在衬底上形成至少一个GaN系列层; 随后在GaN系列层上形成由n型GaN系超晶格结构和GaN系列发光层构成的界面阻挡结构和GaN系列发光层; 以及形成在GaN系发光层上的p型GaN系列层。在本发明中，通过在低温纯氮气氛的外延条件下在发光层之前引入界面阻挡结构来提高辐射复合效率。

4. 发明申请

US20110180778A1 GaN SERIES LIGHT-EMITTING DIODE STRUCTURE 有权
标题翻译： GaN系列发光二极管结构
公开(公告)号：US20110180778A1
公开(公告)日：2011-07-28
申请号：US12694600
申请日：2010-01-27
申请人： Ray-Ming Lin , Jhong-Hao Jiang , Bor-Ren Fang
发明人： Ray-Ming Lin , Jhong-Hao Jiang , Bor-Ren Fang
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere.
摘要翻译：本发明涉及一种GaN系发光二极管结构，其包括：基板; 在衬底上形成至少一个GaN系列层; 随后在GaN系列层上形成由n型GaN系超晶格结构和GaN系列发光层构成的界面阻挡结构和GaN系列发光层; 以及形成在GaN系发光层上的p型GaN系列层。在本发明中，通过在低温纯氮气氛的外延条件下在发光层之前引入界面阻挡结构来提高辐射复合效率。

5. 发明授权

US07659549B2 Method for obtaining a better color rendering with a photoluminescence plate 失效
标题翻译：用光致发光板获得更好显色的方法
公开(公告)号：US07659549B2
公开(公告)日：2010-02-09
申请号：US11584853
申请日：2006-10-23
申请人： Ray-Ming Lin , Jen-Chih Li , Yung-Hsiang Lin , Yuan-Chieh Lu , Yi-Lun Chou
发明人： Ray-Ming Lin , Jen-Chih Li , Yung-Hsiang Lin , Yuan-Chieh Lu , Yi-Lun Chou
IPC分类号： H01L33/00
CPC分类号： H05B33/14 , F21K9/232 , F21K9/64 , F21V3/04 , F21V3/12 , F21Y2103/33 , F21Y2113/13 , F21Y2115/10
摘要： The present invention is a method for obtaining a better color rendering with a photoluminescence plate, and the better color rendering is obtained by using UV radiating on the photoluminescence plate stacked with a red photoluminescence plate, a green photoluminescence plate and a blue photoluminescence plate. Therefore, the color rendering is above 90% and close to the solar light. The photoluminescence plate can be made from directly coated with photoluminescence layers of three colors or with fully mixed fluorescent materials of three colors. Consequently, a white light relied on the present invention is more uniform than the conventional techniques with a color mixing performance based on tricolor LEDs.
摘要翻译：本发明是利用光致发光板获得更好的显色性的方法，并且通过在堆叠有红色光致发光板，绿色发光板和蓝色光致发光板的光致发光板上使用UV辐射来获得更好的显色性。因此，显色性高于90％，接近于太阳光。光致发光板可以直接涂覆有三种颜色的光致发光层或三种颜色的完全混合的荧光材料。因此，依靠本发明的白光比具有基于三色LED的混色性能的传统技术更均匀。

6. 发明申请

US20110003420A1 Fabrication method of gallium nitride-based compound semiconductor 审中-公开
标题翻译：氮化镓基化合物半导体的制造方法
公开(公告)号：US20110003420A1
公开(公告)日：2011-01-06
申请号：US12592926
申请日：2009-12-04
申请人： Miin-Jang Chen , Sheng-Fu Yu , Ray-Ming Lin , Wen-Ching Hsu , Szu-Hua Ho
发明人： Miin-Jang Chen , Sheng-Fu Yu , Ray-Ming Lin , Wen-Ching Hsu , Szu-Hua Ho
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02403 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02472 , H01L21/02507 , H01L21/0254 , H01L33/007 , H01L33/12
摘要： The present invention discloses a method for fabricating gallium nitride(GaN)-based compound semiconductors. Particularly, this invention relates to a method of forming a transition layer on a zinc oxide (ZnO)-based semiconductor layer by the steps of forming a wetting layer and making the wetting layer nitridation. The method not only provides a function of protecting the ZnO-based semiconductor layer, but also uses the transition layer as a buffer layer for a following epitaxial growth of a GaN-based semiconductor layer, and thus, the invention may improve the crystal quality of the GaN-based semiconductor layer effectively.
摘要翻译：本发明公开了一种制造氮化镓（GaN）基化合物半导体的方法。特别地，本发明涉及通过形成润湿层并进行润湿层氮化的步骤在基于氧化锌（ZnO）的半导体层上形成过渡层的方法。该方法不仅提供保护ZnO类半导体层的功能，而且还使用过渡层作为GaN类半导体层的随后的外延生长的缓冲层，因此本发明可以提高晶体质量 GaN基半导体层。

7. 发明申请

US20080093615A1 Method for obtaining a better color rendering with a photoluminescence plate 失效
标题翻译：用光致发光板获得更好显色的方法
公开(公告)号：US20080093615A1
公开(公告)日：2008-04-24
申请号：US11584853
申请日：2006-10-23
申请人： Ray-Ming Lin , Jen-Chih Li , Yung-Hsiang Lin , Yuan-Chieh Lu , Yi-Lun Chou
发明人： Ray-Ming Lin , Jen-Chih Li , Yung-Hsiang Lin , Yuan-Chieh Lu , Yi-Lun Chou
IPC分类号： H01L33/00 , F21S13/10
CPC分类号： H05B33/14 , F21K9/232 , F21K9/64 , F21V3/04 , F21V3/12 , F21Y2103/33 , F21Y2113/13 , F21Y2115/10
摘要： The present invention is a method for obtaining a better color rendering with a photoluminescence plate, and the better color rendering is obtained by using UV radiating on the photoluminescence plate stacked with a red photoluminescence plate, a green photoluminescence plate and a blue photoluminescence plate. Therefore, the color rendering is above 90% and close to the solar light. The photoluminescence plate can be made from directly coated with photoluminescence layers of three colors or with fully mixed fluorescent materials of three colors. Consequently, a white light relied on the present invention is more uniform than the conventional techniques with a color mixing performance based on tricolor LEDs.
摘要翻译：本发明是利用光致发光板获得更好的显色性的方法，并且通过在堆叠有红色光致发光板，绿色发光板和蓝色光致发光板的光致发光板上使用UV辐射来获得更好的显色性。因此，显色性高于90％，接近于太阳光。光致发光板可以直接涂覆有三种颜色的光致发光层或三种颜色的完全混合的荧光材料。因此，依靠本发明的白光比具有基于三色LED的混色性能的传统技术更均匀。

8. 发明授权

US07408304B1 Apparatus for power circuit of light emitting diode 有权
标题翻译：发光二极管电源电路设备
公开(公告)号：US07408304B1
公开(公告)日：2008-08-05
申请号：US11727433
申请日：2007-03-27
申请人： Ray-Ming Lin , Sheng-Fu Yu , Wei-Tse Weng , Yung-Hsiang Lin
发明人： Ray-Ming Lin , Sheng-Fu Yu , Wei-Tse Weng , Yung-Hsiang Lin
IPC分类号： G09G3/10
CPC分类号： G09G3/14 , H05B33/0809 , Y02B20/348 , Y10S362/80
摘要： The invention is set for connecting L.E.D., bridging rectifier and AC/DC power transformer by using series connection method, also the main purpose is for saving energy and reducing the cost of electronic components. The first apparatus is built by first bridge rectifier, first L.E.D. group and first current-limiting resistor using the series connection method. The second apparatus is built by second bridge rectifier, second L.E.D. group and second current-limiting resistor using the series connection method. Then, finally the previous two apparatus will be connected each other by using parallel connection method to the AC/DC power source.
摘要翻译：本发明是通过串联连接方式设置连接L.E.D.桥接整流器和AC / DC电力变压器，主要目的是节约能源，降低电子元件的成本。第一台装置由第一桥整流器，第一台L.E.D. 组和第一限流电阻采用串联方式。第二台设备由第二桥式整流器，第二台组和第二限流电阻采用串联方式。然后，最后两台设备将通过并行连接方式连接到AC / DC电源。

9. 发明申请

US20080118998A1 Method for enhancing lightness of p-type nitride group compound L.E.D. 审中-公开
标题翻译：提高p型氮化物组合物L.E.D.的亮度的方法
公开(公告)号：US20080118998A1
公开(公告)日：2008-05-22
申请号：US11603068
申请日：2006-11-22
申请人： Ray-Ming Lin , Kuo-Hsing Chen , Jen-Chih Li , Yi-Lun Chou
发明人： Ray-Ming Lin , Kuo-Hsing Chen , Jen-Chih Li , Yi-Lun Chou
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L21/3245 , H01L33/007 , H01L33/325
摘要： A method for enhance lightness of p-type nitride group compound L.E.D. is disclosed. The present invention, firstly, the p-type GaN semiconductor layer is provided, then, the different thickness and coverage for titanium metal are coated on the p-type GaN semiconductor layer. Next, the activation process is carried out in the heating tube under the nitrogen gas and quite high temperature, about certain minutes. Finally, The titanium metal is removed after the activation process, therefore the carrier concentration can be selectively changed, in order to enhance lightness for p-type nitride group compound L.E.D.
摘要翻译：一种提高p型氮化物组合物L.E.D.的亮度的方法。被披露。本发明首先提供了p型GaN半导体层，然后将不同的钛金属厚度和覆盖层涂覆在p型GaN半导体层上。接下来，在氮气和相当高的温度下在加热管中进行激活过程，约一定分钟。最后，活化处理后去除钛金属，因此可以选择性地改变载流子浓度，以提高p型氮化物组合物L.E.D.的亮度。

10. 发明授权

US07759710B1 Oxidized low density lipoprotein sensing device for gallium nitride process 失效
标题翻译：用于氮化镓工艺的氧化低密度脂蛋白感测装置
公开(公告)号：US07759710B1
公开(公告)日：2010-07-20
申请号：US12435457
申请日：2009-05-05
申请人： Hsien-Chin Chiu , Chao-Sung Lai , Bing-Shan Hong , Chao-Wei Lin , S. E. Chow , Ray-Ming Lin , Yung-Hsiang Lin , Hsin-Shun Huang
发明人： Hsien-Chin Chiu , Chao-Sung Lai , Bing-Shan Hong , Chao-Wei Lin , S. E. Chow , Ray-Ming Lin , Yung-Hsiang Lin , Hsin-Shun Huang
IPC分类号： H01L29/778
CPC分类号： G01N33/92 , A61B5/1473 , G01N27/4145
摘要： An oxidized low density lipoprotein sensing device for a gallium nitride process is a GaN HEMT device including: a gateless AlGaN/GaN sensing transistor device, a testing window, a source, a drain, two metal connecting wires and a passivation layer. The gateless AlGaN/GaN sensing transistor device has an epitaxial wafer structure including a GaN layer and an aluminum gallium nitride layer. The testing window is disposed on the epitaxial wafer structure. The metal connecting wire is disposed on a source and a drain. The passivation layer is covered onto a surface of the sensing device except the testing window. A built-in piezoelectric field is created by the properties of FET and the polarization effect of AlGaN/GaN to achieve the effect of sensing the level of oxidizing proteins in human body quickly, accurately and easily.
摘要翻译：用于氮化镓工艺的氧化低密度脂蛋白感测装置是GaN HEMT器件，包括：无盖AlGaN / GaN感测晶体管器件，测试窗口，源极，漏极，两个金属连接线和钝化层。无定形AlGaN / GaN感测晶体管器件具有包括GaN层和氮化镓铝层的外延晶片结构。测试窗口设置在外延晶片结构上。金属连接线设置在源极和漏极上。除了测试窗口之外，钝化层被覆盖在感测装置的表面上。内置的压电场由FET的特性和AlGaN / GaN的极化效应产生，以实现快速，准确，容易地感测人体氧化蛋白水平的效果。

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