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1. 发明授权

US08138494B2 GaN series light-emitting diode structure 有权
标题翻译： GaN系列发光二极管结构
公开(公告)号：US08138494B2
公开(公告)日：2012-03-20
申请号：US12694600
申请日：2010-01-27
申请人： Ray-Ming Lin , Jhong-Hao Jiang , Bor-Ren Fang
发明人： Ray-Ming Lin , Jhong-Hao Jiang , Bor-Ren Fang
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere.
摘要翻译：本发明涉及一种GaN系发光二极管结构，其包括：基板; 在衬底上形成至少一个GaN系列层; 随后在GaN系列层上形成由n型GaN系超晶格结构和GaN系列发光层构成的界面阻挡结构和GaN系列发光层; 以及形成在GaN系发光层上的p型GaN系列层。在本发明中，通过在低温纯氮气氛的外延条件下在发光层之前引入界面阻挡结构来提高辐射复合效率。

2. 发明申请

US20110180778A1 GaN SERIES LIGHT-EMITTING DIODE STRUCTURE 有权
标题翻译： GaN系列发光二极管结构
公开(公告)号：US20110180778A1
公开(公告)日：2011-07-28
申请号：US12694600
申请日：2010-01-27
申请人： Ray-Ming Lin , Jhong-Hao Jiang , Bor-Ren Fang
发明人： Ray-Ming Lin , Jhong-Hao Jiang , Bor-Ren Fang
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere.
摘要翻译：本发明涉及一种GaN系发光二极管结构，其包括：基板; 在衬底上形成至少一个GaN系列层; 随后在GaN系列层上形成由n型GaN系超晶格结构和GaN系列发光层构成的界面阻挡结构和GaN系列发光层; 以及形成在GaN系发光层上的p型GaN系列层。在本发明中，通过在低温纯氮气氛的外延条件下在发光层之前引入界面阻挡结构来提高辐射复合效率。

3. 发明授权

US06548159B2 Epoxy/clay nanocomposite for making printed circuit boards 有权
标题翻译：用于制造印刷电路板的环氧/粘土纳米复合材料
公开(公告)号：US06548159B2
公开(公告)日：2003-04-15
申请号：US09987165
申请日：2001-11-13
申请人： Tsung-Yen Tsai , Sung-Jeng Jong , An-Chi Yeh , Joshua Chiang , Bor-Ren Fang
发明人： Tsung-Yen Tsai , Sung-Jeng Jong , An-Chi Yeh , Joshua Chiang , Bor-Ren Fang
IPC分类号： B32B1800
CPC分类号： C08J5/24 , C08J2363/00 , C08K9/04 , H05K1/0373 , H05K2201/0209 , H05K2201/068 , H05K2201/0769 , Y10T428/24917 , Y10T428/24926 , Y10T428/251 , Y10T428/252 , Y10T428/31511 , Y10T442/209 , C08L63/00
摘要： An epoxy/clay nanocomposite suitable for use as matrix material for printed circuit boards is disclosed. The nanocomposite of the present invention comprises a layered clay material uniformly dispersed in an epoxy polymer matrix, wherein the clay material has been modified to an organoclay by ion exchange with (1) benzalkonium chloride and (2) dicyandiamide or tetraethylenepentamine. The epoxy/clay nanocomposites of the present invention have superior dimensional and thermal stability, and a lower hygroscopic property. The invention also includes the prepregs or circuit boards containing the epoxy/clay nanocomposite.
摘要翻译：公开了一种适用于印刷电路板基质材料的环氧/粘土纳米复合材料。本发明的纳米复合材料包括均匀分散在环氧聚合物基质中的层状粘土材料，其中通过与（1）苯扎氯铵和（2）双氰胺或四亚乙基五胺进行离子交换将粘土材料改性为有机粘土。本发明的环氧/粘土纳米复合材料具有优异的尺寸和热稳定性，并且具有较低的吸湿性能。本发明还包括含有环氧/粘土纳米复合材料的预浸料或电路板。

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