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1. 发明授权

US07029803B2 Attenuating phase shift mask blank and photomask 失效
标题翻译：衰减相移掩模空白和光掩模
公开(公告)号：US07029803B2
公开(公告)日：2006-04-18
申请号：US10655593
申请日：2003-09-05
申请人： Hans Becker , Ute Buttgereit , Gunter Hess , Oliver Goetzberger , Frank Schmidt , Frank Sobel , Markus Renno , S. Jay Chey
发明人： Hans Becker , Ute Buttgereit , Gunter Hess , Oliver Goetzberger , Frank Schmidt , Frank Sobel , Markus Renno , S. Jay Chey
IPC分类号： G01F9/00
CPC分类号： C23C14/3442 , C23C14/10 , C23C14/14 , C23C14/46 , G03F1/32
摘要： The present invention relates to attenuating phase shift mask blanks for use in lithography, a method of fabricating such a mask blank.
摘要翻译：本发明涉及衰减用于光刻的相移掩模毛坯，制造这种掩模坯料的方法。

2. 发明申请

US20070128528A1 Mask blank and photomask having antireflective properties 审中-公开
标题翻译：掩模空白和具有抗反射性能的光掩模
公开(公告)号：US20070128528A1
公开(公告)日：2007-06-07
申请号：US11526866
申请日：2006-09-26
申请人： Gunter Hess , Hans Becker , Oliver Goetzberger , Markus Renno , Ute Buttgereit , Frank Schmidt , Frank Sobel
发明人： Gunter Hess , Hans Becker , Oliver Goetzberger , Markus Renno , Ute Buttgereit , Frank Schmidt , Frank Sobel
IPC分类号： G21K5/00 , G03F1/00
CPC分类号： G03F1/26 , B82Y10/00 , B82Y40/00 , G03F1/22 , G03F1/24 , G03F1/30 , G03F1/32 , G03F1/46 , G21K2201/067
摘要： The present invention relates to mask blanks with anti reflective coatings comprising at least two sublayers. Such bilayer or multilayer anti reflective coatings are advantageous for binary and phase shift mask blanks for use in lithography for an exposure wavelength of 300 nm or less with improved anti reflection properties; and to EUVL mask blanks having improved inspection properties.
摘要翻译：本发明涉及具有包含至少两个亚层的抗反射涂层的掩模毛坯。这种双层或多层抗反射涂层对于用于光刻中用于300nm或更小的曝光波长的改进的抗反射性质的二元和相移掩模毛坯是有利的; 以及具有改进的检查性能的EUVL掩模毛坯。

3. 发明申请

US20050053845A1 Attenuating phase shift mask blank and photomask 失效
标题翻译：衰减相移掩模空白和光掩模
公开(公告)号：US20050053845A1
公开(公告)日：2005-03-10
申请号：US10655593
申请日：2003-09-05
申请人： Hans Becker , Ute Buttgereit , Gunter Hess , Oliver Goetzberger , Frank Schmidt , Frank Sobel , Markus Renno , S. Chey
发明人： Hans Becker , Ute Buttgereit , Gunter Hess , Oliver Goetzberger , Frank Schmidt , Frank Sobel , Markus Renno , S. Chey
IPC分类号： G03F1/08 , C23C14/10 , C23C14/14 , C23C14/34 , C23C14/46 , G03F1/00 , H01L21/027 , C23C14/32 , B32B9/00 , B32B17/06 , C23C14/00 , G03F9/00
CPC分类号： C23C14/3442 , C23C14/10 , C23C14/14 , C23C14/46 , G03F1/32
摘要： The present invention relates to attenuating phase shift mask blanks for use in lithography, a method of fabricating such a mask blank.
摘要翻译：本发明涉及衰减用于光刻的相移掩模毛坯，制造这种掩模坯料的方法。

4. 发明申请

US20050190450A1 Ultra high transmission phase shift mask blanks 审中-公开
标题翻译：超高透射相移掩模毛坯
公开(公告)号：US20050190450A1
公开(公告)日：2005-09-01
申请号：US11040115
申请日：2005-01-24
申请人： Hans Becker , Frank Schmidt , Oliver Goetzberger , Guenter Hess , Ute Buttgereit , Frank Sobel , Markus Renno
发明人： Hans Becker , Frank Schmidt , Oliver Goetzberger , Guenter Hess , Ute Buttgereit , Frank Sobel , Markus Renno
IPC分类号： H01L21/027 , C03C17/34 , C23C16/455 , G03F1/00 , G03F1/08 , G02B27/00
CPC分类号： C03C17/34 , C03C2218/328 , C03C2218/33 , G03F1/26 , G03F1/32 , G03F1/54 , G03F1/68 , G03F1/80
摘要： The present invention relates to phase shift mask blanks for exposure wavelength of less than 300 nm, a process for their preparation, to phase shift masks manufactured by such phase shift mask blanks and a process for the preparation of said phase shift masks.
摘要翻译：本发明涉及用于曝光波长小于300nm的相移掩模毛坯，其制备方法，由这种相移掩模毛坯制造的相移掩模和用于制备所述相移掩模的方法。

5. 发明申请

US20050260504A1 Mask blank having a protection layer 审中-公开
标题翻译：掩模毛坯具有保护层
公开(公告)号：US20050260504A1
公开(公告)日：2005-11-24
申请号：US11101654
申请日：2005-04-08
申请人： Hans Becker , Ute Buttgereit , Guenter Hess , Oliver Goetzberger , Frank Schmidt , Frank Sobel , Markus Renno
发明人： Hans Becker , Ute Buttgereit , Guenter Hess , Oliver Goetzberger , Frank Schmidt , Frank Sobel , Markus Renno
IPC分类号： G03F1/00 , G03F1/08 , G03F1/16
CPC分类号： G03F1/30 , G03F1/32
摘要： A mask blank and photomask for exposure light having a wavelength of 300 nm or is less described having an improved chemical durability in particular with respect to alkaline cleaning procedures. In particular, a mask blank and photomask comprise an additional ultra thin protection layer provided on a silicon and/or aluminum containing layer.
摘要翻译：具有波长为300nm或更少描述的曝光光的掩模空白和光掩模具有改善的化学耐久性，特别是对于碱性清洁程序。特别地，掩模坯料和光掩模包括设置在含硅和/或含铝层上的额外的超薄保护层。

6. 发明申请

US20060115744A1 Method of producing a mask blank for photolithographic applications, and mask blank 审中-公开
标题翻译：制备用于光刻应用的掩模坯料的方法和掩模坯料
公开(公告)号：US20060115744A1
公开(公告)日：2006-06-01
申请号：US11198387
申请日：2005-08-08
申请人： Lutz Aschke , Frank Sobel , Guenter Hess , Hans Becker , Markus Renno , Frank Schmidt , Oliver Goetzberger
发明人： Lutz Aschke , Frank Sobel , Guenter Hess , Hans Becker , Markus Renno , Frank Schmidt , Oliver Goetzberger
IPC分类号： G03F1/00 , B05D1/04 , B32B9/00 , B32B17/10 , B32B17/06
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/38 , G03F1/40 , Y10T428/31616
摘要： The invention relates to a method of producing a mask blank (1) for photolithographic applications, particularly in EUV lithography, comprising the steps of: providing a substrate (2) which has a front side (4) and a rear side (3); depositing an electrically conductive layer (5) on the rear side of the substrate; depositing a coating on the front side of the substrate, wherein the coating comprises at least a first layer (6) and a second layer (9); and structuring the coating (6, 9) for photolithographic applications; wherein a respective handling area (22; 22a-22c) is formed on the front side (4) at least at one predefined location, said handling area not being structured for photolithographic applications and being designed for the handling of the mask blank (1) by means of a mechanical clamp or handling device, and wherein the first layer (6) is exposed in the respective handling area (22; 22a-22c) so that, when the mask blank (1) is handled from the front side, the mechanical clamp or handling device bears against the first layer (6). The invention furthermore relates to a corresponding mask blank.
摘要翻译：本发明涉及一种制备用于光刻应用的掩模板（1）的方法，特别是在EUV光刻中，包括以下步骤：提供具有前侧（4）和后侧（3）的基板（2）在所述衬底的后侧上沉积导电层（5）; 在所述基底的正面上沉积涂层，其中所述涂层至少包括第一层（6）和第二层（9）; 并构造用于光刻应用的涂层（6,9）; 其中至少在一个预定位置处在前侧（4）上形成相应的操作区域（22; 22a-22c），所述操作区域不被构造用于光刻应用并且被设计用于处理掩模坯料（ 1）通过机械夹具或处理装置，并且其中第一层（6）暴露在相应的处理区域（22; 22a-22c）中，使得当掩模坯料（1）从前侧，机械夹具或处理装置抵靠第一层（6）。本发明还涉及相应的掩模坯料。

7. 发明申请

US20060008749A1 Method for manufacturing of a mask blank for EUV photolithography and mask blank 审中-公开
标题翻译：用于EUV光刻和掩模毛坯的掩模坯料的制造方法
公开(公告)号：US20060008749A1
公开(公告)日：2006-01-12
申请号：US10885898
申请日：2004-07-08
申请人： Frank Sobel , Lutz Aschke , Guenter Hess , Hans Becker , Markus Renno , Frank Schmidt , Oliver Goetzberger
发明人： Frank Sobel , Lutz Aschke , Guenter Hess , Hans Becker , Markus Renno , Frank Schmidt , Oliver Goetzberger
IPC分类号： B32B17/06 , B32B9/00 , G03C5/00 , B32B15/00 , G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , C23C14/0052 , C23C14/0641 , C23C14/0676 , C23C14/46 , G03F1/38
摘要： The invention relates to a method for manufacturing of a mask blank for extreme ultraviolet (EUV) photolithography, comprising the steps of: providing a substrate having a front surface and a back surface; depositing a film comprising tantalum nitride (TaN) on said front surface of said substrate for absorbing EUV light used during a photolithographic process; and depositing a conductive coating on said back surface of said substrate. Preferably, ion beam sputtering is used for depositing the film comprising tantalum nitride (TaN) and/or the conductive coating on the back surface of the substrate. Preferably, Xenon is used as a sputter gas for ion beam sputtering. Another aspect of the present invention relates to a mask blank for extreme ultraviolet (EUV) photolithography.
摘要翻译：本发明涉及一种用于制造用于极紫外（EUV）光刻的掩模坯料的方法，包括以下步骤：提供具有前表面和后表面的基板; 在所述衬底的前表面上沉积包含氮化钽（TaN）的膜，以吸收在光刻过程中使用的EUV光; 以及在所述衬底的所述背表面上沉积导电涂层。优选地，离子束溅射用于在衬底的背面上沉积包含氮化钽（TaN）和/或导电涂层的膜。优选地，氙被用作用于离子束溅射的溅射气体。本发明的另一方面涉及一种用于极紫外（EUV）光刻的掩模板。

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