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1. 发明申请

US20150115769A1 SYSTEM FOR CONVERSING THERMAL ENERGY INTO ELECTRICAL ENERGY 有权
标题翻译：将热能转化为电能的系统
公开(公告)号：US20150115769A1
公开(公告)日：2015-04-30
申请号：US14232092
申请日：2012-07-09
申请人： Guillaume Savelli , Philippe Coronel , Stephane Monfray , Thomas Skotnicki
发明人： Guillaume Savelli , Philippe Coronel , Stephane Monfray , Thomas Skotnicki
IPC分类号： F03G7/06 , H02N2/18
CPC分类号： F03G7/06 , F03G7/065 , H01L41/1136 , H02N2/18 , H02N2/188
摘要： An assembly converting thermal energy into electrical energy including: at least one temperature sensitive bimetallic strip arranged in a space delimited by a hot source and a cold source facing each other, the bimetallic strip extending along a longitudinal axis; at least one suspended element fixed in movement to the sensitive element and extending laterally from the sensitive element and including a free end; and at least one piezoelectric element suspended from a part fixed relative to the sensitive element and vibrated by the suspended element such that it is vibrated when the bimetallic strip changes configuration and the suspended element comes into contact with the piezoelectric element, the piezoelectric element being located outside the space defined between the bimetallic strip and the hot source and outside the space between the bimetallic strip and the cold source.
摘要翻译：一种将热能转换成电能的组件，包括：至少一个温度敏感的双金属条，布置在由热源和相互面对的冷源界定的空间中，双金属条沿着纵轴延伸; 固定在所述敏感元件上并且从所述敏感元件横向延伸并且包括自由端的至少一个悬挂元件; 以及至少一个压电元件，其从相对于所述敏感元件固定的部分悬挂并由所述悬挂元件振动，使得当所述双金属条改变构型并且所述悬挂元件与所述压电元件接触时，所述压电元件被振动，所述压电元件位于在双金属条和热源之间限定的空间之外以及双金属条和冷源之间的空间之外。

2. 发明授权

US06969878B2 Surround-gate semiconductor device encapsulated in an insulating medium 有权
标题翻译：封装在绝缘介质中的环绕栅极半导体器件
公开(公告)号：US06969878B2
公开(公告)日：2005-11-29
申请号：US10409653
申请日：2003-04-08
申请人： Philippe Coronel , Stephane Monfray , Thomas Skotnicki
发明人： Philippe Coronel , Stephane Monfray , Thomas Skotnicki
IPC分类号： H01L21/336 , H01L29/786 , H01L21/84
CPC分类号： H01L29/66772 , H01L29/78648 , H01L29/78654
摘要： A semiconductor device is provided that includes a semiconductor channel region extending above a semiconductor substrate in a longitudinal direction between a semiconductor source region and a semiconductor drain region, and a gate region extending in the transverse direction, coating the channel region, and insulated from the channel region. The source, channel, and drain regions are formed in a continuous semiconductor layer that is approximately plane and parallel to the upper surface of the substrate. Additionally, the source, drain, and gate regions are coated in an insulating coating so as to provide electrical insulation between the gate region and the source and drain regions, and between the substrate and the source, drain, gate, and channel regions. Also provided is an integrated circuit that includes such a semiconductor device, and a method for manufacturing such a semiconductor device.
摘要翻译：提供一种半导体器件，其包括在半导体源极区域和半导体漏极区域之间沿纵向方向在半导体衬底上方延伸的半导体沟道区域和在横向方向上延伸的栅极区域，涂覆沟道区域并与渠道区域。源极，沟道和漏极区域形成在大致平面并平行于衬底的上表面的连续半导体层中。此外，源极，漏极和栅极区域被涂覆在绝缘涂层中，以便在栅极区域和源极和漏极区域之间以及衬底与源极，漏极，栅极和沟道区域之间提供电绝缘。还提供了一种包括这种半导体器件的集成电路及其制造方法。

3. 发明申请

US20050085026A1 Manufacturing method of semiconductor-on-insulator region structures 审中-公开
标题翻译：绝缘体上半导体区域结构的制造方法
公开(公告)号：US20050085026A1
公开(公告)日：2005-04-21
申请号：US10960436
申请日：2004-10-07
申请人： Stephane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillet-Beranger
发明人： Stephane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillet-Beranger
IPC分类号： H01L21/762 , H01L21/00 , H01L21/8234 , H01L21/84
CPC分类号： H01L21/76202 , H01L21/76251 , H01L29/66772 , H01L29/78603 , H01L29/78606
摘要： A single-crystal silicon region on insulator on silicon intended to receive at least one component, the insulator having overthicknesses.
摘要翻译：硅上的绝缘体上的单晶硅区域旨在接收至少一个元件，绝缘体具有厚度。

4. 发明授权

US08173992B2 Transistor or triode structure with tunneling effect and insulating nanochannel 有权
标题翻译：具有隧道效应和绝缘纳米通道的晶体管或三极管结构
公开(公告)号：US08173992B2
公开(公告)日：2012-05-08
申请号：US11672342
申请日：2007-02-07
申请人： Thomas Skotnicki , Stephane Monfray
发明人： Thomas Skotnicki , Stephane Monfray
IPC分类号： H01L29/06
CPC分类号： H01L45/00 , B82Y10/00 , H01L29/7613
摘要： A microelectronic device is provided with at least one transistor or triode with Fowler-Nordheim tunneling current modulation, and supported on a substrate. The triode or the transistor includes at least one first block forming a cathode and at least one second block forming an anode. The first block and the second block are supported on the substrate, and are separated from each other by a channel insulating zone also supported on the substrate. A gate dielectric zone is supported on at least the channel insulating zone, and a gate is supported on the gate dielectric zone.
摘要翻译：微电子器件设置有至少一个具有Fowler-Nordheim隧道电流调制的晶体管或三极管，并被支撑在衬底上。三极管或晶体管包括形成阴极的至少一个第一块和形成阳极的至少一个第二块。第一块和第二块被支撑在基板上，并且通过也支撑在基板上的沟道绝缘区彼此分离。栅介质区域至少被支撑在沟道绝缘区上，并且栅极被支撑在栅介质区上。

5. 发明申请

US20070202644A1 SCHOTTKY-BARRIER MOS TRANSISTOR ON A FULLY-DEPLETED SEMICONDUCTOR FILM AND PROCESS FOR FABRICATING SUCH A TRANSISTOR 审中-公开
标题翻译：全封闭半导体膜上的肖特基栅极MOS晶体管和用于制造这种晶体管的工艺
公开(公告)号：US20070202644A1
公开(公告)日：2007-08-30
申请号：US11672193
申请日：2007-02-07
申请人： Thomas Skotnicki , Stephane Monfray
发明人： Thomas Skotnicki , Stephane Monfray
IPC分类号： H01L21/8234 , H01L21/8238
CPC分类号： H01L29/66636 , H01L21/823418 , H01L29/47 , H01L29/495 , H01L29/66643 , H01L29/7839
摘要： This process for manufacturing a Schottky-barrier MOS transistor on a fully depleted semiconductor film may include depositing a first layer of a first sacrificial material on an active zone of the substrate, forming a silicon layer on top of the first layer of sacrificial material, forming a gate region on top of the silicon layer with interposition of a gate oxide layer, and selective etching of the sacrificial material so as to form a tunnel beneath the gate region. The tunnel is filled with a dielectric second sacrificial material. A controlled lateral etching of the second sacrificial material is performed so as to keep behind a zone of dielectric material beneath the gate region. Silicidation is performed at the location of the source region and drain region and at the location of the etched zone.
摘要翻译：用于在完全耗尽的半导体膜上制造肖特基势垒MOS晶体管的该工艺可以包括在衬底的有源区上沉积第一牺牲材料的第一层，在第一牺牲材料层的顶部上形成硅层，形成在硅层的顶部具有栅极氧化物层的栅极区域，以及选择性蚀刻牺牲材料，以便在栅极区域下方形成隧道。隧道填充有电介质第二牺牲材料。执行第二牺牲材料的受控横向蚀刻，以便保持在栅极区域下方的介电材料区域的后面。在源极区域和漏极区域以及蚀刻区域的位置进行硅化。

6. 发明授权

US07892927B2 Transistor with a channel comprising germanium 有权
标题翻译：具有包含锗的通道的晶体管
公开(公告)号：US07892927B2
公开(公告)日：2011-02-22
申请号：US11725160
申请日：2007-03-16
申请人： Stephane Monfray , Thomas Skotnicki , Didier Dutartre , Alexandre Talbot
发明人： Stephane Monfray , Thomas Skotnicki , Didier Dutartre , Alexandre Talbot
IPC分类号： H01L21/336
CPC分类号： H01L29/78684 , H01L29/66628 , H01L29/66772
摘要： A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.
摘要翻译：包括富含锗的通道的晶体管。通过从所述中间层的下表面开始的硅 - 锗中间层中包含的硅的氧化产生富锗的通道。因此锗原子迁移到硅 - 锗中间层的上表面，并被栅极绝缘层阻挡。因此，在氧化步骤期间原子的迁移对晶体管的性能的影响较小，因为晶体管的栅极绝缘体已经被制造并且在该步骤期间不被修改。锗原子向固定的栅极绝缘体的迁移导致通道和绝缘体之间的表面缺陷的限制。

7. 发明申请

US20080087959A1 Manufacturing method of semiconductor-on-insulator region structures 有权
标题翻译：绝缘体上半导体区域结构的制造方法
公开(公告)号：US20080087959A1
公开(公告)日：2008-04-17
申请号：US11713553
申请日：2007-03-02
申请人： Stephane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillet-Beranger
发明人： Stephane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillet-Beranger
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/76202 , H01L21/76251 , H01L29/66772 , H01L29/78603 , H01L29/78606
摘要： A single-crystal silicon region on insulator on silicon intended to receive at least one component, the insulator having overthicknesses.
摘要翻译：硅上的绝缘体上的单晶硅区域旨在接收至少一个元件，绝缘体具有厚度。

8. 发明申请

US20090152998A1 MICRORESONATOR 有权
标题翻译：微型计算机
公开(公告)号：US20090152998A1
公开(公告)日：2009-06-18
申请号：US12266471
申请日：2008-11-06
申请人： Nicolas Abele , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stephane Monfray , Fabrice Cassett
发明人： Nicolas Abele , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stephane Monfray , Fabrice Cassett
IPC分类号： H01L41/00 , H01L21/20
CPC分类号： H03H9/2405 , H03H3/0072 , H03H2009/02496
摘要： A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.
摘要翻译：一种微谐振器，包括单晶硅谐振元件和靠近谐振元件放置的至少一个激活电极，其中谐振元件放置在覆盖衬底的半导体层的开口中，激活电极形成在半导体层中并在开幕式的水平。

9. 发明申请

US20050199970A1 Electromechanical resonator and method for fabricating such a resonator 有权
标题翻译：机电谐振器及其制造方法
公开(公告)号：US20050199970A1
公开(公告)日：2005-09-15
申请号：US10895616
申请日：2004-07-21
申请人： Stephane Monfray , Pascal Ancey , Thomas Skotnicki , Karim Segueni
发明人： Stephane Monfray , Pascal Ancey , Thomas Skotnicki , Karim Segueni
IPC分类号： B81B3/00 , H03H9/24 , H01L27/14
CPC分类号： H03H9/2405 , H03H2009/02511
摘要： An electromechanical resonator includes a monocrystalline-silicon substrate (S) provided with an active zone (ZA) delimited by an insulating region, a vibrating beam (10) anchored by at least one of its free ends on the insulating region and including a monocrystalline-silicon vibrating central part (12), and a control electrode (E) arranged above the beam and bearing on the active zone. The central part (12) of the beam is separated from the active zone (ZA) and from the control electrode (E).
摘要翻译：机电谐振器包括设置有由绝缘区限定的有源区（ZA）的单晶硅衬底（S），由绝缘区上的至少一个自由端锚定的振动束（10），并且包括单晶硅衬底硅振动中心部分（12）和布置在梁的上方并且承载在活动区上的控制电极（E）。光束的中心部分（12）与有源区（ZA）和控制电极（E）分离。

10. 发明申请

US20080020532A1 Transistor with a channel comprising germanium 有权
标题翻译：具有包含锗的通道的晶体管
公开(公告)号：US20080020532A1
公开(公告)日：2008-01-24
申请号：US11725160
申请日：2007-03-16
申请人： Stephane Monfray , Thomas Skotnicki , Didier Dutartre , Alexandre Talbot
发明人： Stephane Monfray , Thomas Skotnicki , Didier Dutartre , Alexandre Talbot
IPC分类号： H01L21/336
CPC分类号： H01L29/78684 , H01L29/66628 , H01L29/66772
摘要： A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.
摘要翻译：包括富含锗的通道的晶体管。通过从所述中间层的下表面开始的硅 - 锗中间层中包含的硅的氧化产生富锗的通道。因此锗原子迁移到硅 - 锗中间层的上表面，并被栅极绝缘层阻挡。因此，在氧化步骤期间原子的迁移对晶体管的性能的影响较小，因为晶体管的栅极绝缘体已经被制造并且在该步骤期间不被修改。锗原子向固定的栅极绝缘体的迁移导致通道和绝缘体之间的表面缺陷的限制。

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